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    • 1. 发明授权
    • Method for producing semiconductor device with capacitor stacked
    • 制造具有电容器的半导体器件的方法
    • US06048764A
    • 2000-04-11
    • US800121
    • 1997-02-13
    • Hiroshi SuzukiAkira Kubo
    • Hiroshi SuzukiAkira Kubo
    • H01L27/04H01L21/822H01L21/8242H01L27/108
    • H01L27/10852
    • In forming a storage node with sidewalls on interlayer dielectric layer of a semiconductor device, the interlayer dielectric layer having an uppermost silicon oxide film, a silicon nitride film is formed as a protective film on the storage node of poly-silicon formed on the interlayer dielectric layer, and thereafter a poly-silicon layer is deposited and then subjected to an anisotropic etching to partially remove the polysilicon layer to remain, as the side walls, portions of the poly-silicon layer on side surfaces of the storage node, with protecting the storage node by the protective film from the etching and without etching the uppermost silicon oxide film. Alternatively, the uppermost silicon oxide film is subjected to a nitrogen plasma treatment before forming the storage node, and a silicon oxide film can be used as the protective film. The storage node with the side walls can be used as a lower electrode of a stack type capacitor in the semiconductor device after removing the protective film.
    • 在形成具有半导体器件的层间电介质层上的侧壁的存储节点的情况下,在层间电介质上形成的多晶硅的存储节点上形成具有最上层氧化硅膜的层间绝缘层,氮化硅膜作为保护膜 然后沉积多晶硅层,然后进行各向异性蚀刻以部分去除多晶硅层,以保留作为侧壁的存储节点的侧表面上的多晶硅层的部分,同时保护 存储节点由保护膜从蚀刻而不蚀刻最上面的氧化硅膜。 或者,在形成存储节点之前,对最上面的氧化硅膜进行氮等离子体处理,可以使用氧化硅膜作为保护膜。 在去除保护膜之后,具有侧壁的存储节点可用作半导体器件中的堆叠型电容器的下电极。
    • 9. 发明授权
    • Resonant pressure sensor and method of manufacturing the same
    • 共振压力传感器及其制造方法
    • US09003889B2
    • 2015-04-14
    • US13593311
    • 2012-08-23
    • Yuusaku YoshidaTakashi YoshidaHiroshi SuzukiShuhei YoshitaHisashi Terashita
    • Yuusaku YoshidaTakashi YoshidaHiroshi SuzukiShuhei YoshitaHisashi Terashita
    • G01L11/00G01L9/00
    • G01L9/0016G01L9/0045
    • A resonant pressure sensor including one or more resonant-type strain gauges arranged on a diaphragm may include a sensor substrate made of silicon and including one surface on which one or more resonant-type strain gauge elements are arranged and the other surface which is polished to have a thickness corresponding to the diaphragm, a base substrate made of silicon and including one surface directly bonded with the other surface of the sensor substrate, a concave portion formed in a portion of the base substrate bonding with the sensor substrate, substantially forming the diaphragm in the sensor substrate, and including a predetermined gap that does not restrict a movable range of the diaphragm due to foreign substances and suppresses vibration of the diaphragm excited by vibration of the resonant-type strain gauge elements, one or more conducting holes, and a fluid.
    • 包括设置在隔膜上的一个或多个谐振型应变计的共振压力传感器可以包括由硅制成的传感器基板,并且包括一个表面,一个表面上布置有一个或多个谐振型应变计元件,另一个表面抛光到 具有对应于隔膜的厚度,由硅制成的基底基板,其包括与传感器基板的另一表面直接接合的一个表面;凹部,形成在与传感器基板接合的基底部分的一部分中,基本上形成隔膜 并且包括预定的间隙,其不会由于异物而限制隔膜的可移动范围,并且抑制由共振型应变计元件的振动激励的隔膜的振动,一个或多个导电孔和 流体。
    • 10. 发明授权
    • Process for producing solvent-soluble reactive polysiloxanes
    • 制备溶剂可溶性活性聚硅氧烷的方法
    • US08952117B2
    • 2015-02-10
    • US13996828
    • 2011-12-14
    • Akinori KitamuraNaomasa FurutaHiroshi Suzuki
    • Akinori KitamuraNaomasa FurutaHiroshi Suzuki
    • C08G77/06C08G77/20C08K5/103
    • C08K5/103C08G77/06C08G77/20
    • The present invention is a method for producing solvent-soluble polysiloxanes which includes a condensation process of subjecting a raw material having siloxane-bond-forming groups to hydrolytic copolycondensation in the presence of a catalyst to synthesize a reactive polysiloxane represented by general formula (1), the raw material containing both an organosilicon compound (S1) having a (meth)acryloyl group and siloxane-bond-forming groups and at least one silicon compound (S2) selected from among tetraalkoxysilanes and tetrahalogenosilanes, wherein in the condensation process, the organosilicon compound (S1) and silicon compound (S2) are used at a (S2)/(S1) molar ratio of 1.8 or less, and the condensation process is conducted by adding gradually a mixture of the silicon compound (S2) and the catalyst to a raw material liquid containing the organosilicon compound (S1) and water, while keeping the molar ratio of the amount of the silicon compound (S2) to the amount of the organosilicon compound (S1) within the range of 0.001/min to 0.3/min.
    • 本发明是一种溶剂可溶性聚硅氧烷的制造方法,其包括在催化剂存在下使具有硅氧烷键形成基团的原料进行水解共缩聚的缩合方法,合成由通式(1)表示的反应性聚硅氧烷, ,含有具有(甲基)丙烯酰基的有机硅化合物(S1)和硅氧烷键形成基团的原料和选自四烷氧基硅烷和四卤代硅烷中的至少一种硅化合物(S2),其中在缩合过程中,将有机硅 化合物(S1)和硅化合物(S2)以(S2)/(S1)摩尔比为1.8以下使用,缩合工序通过将硅化合物(S2)和催化剂的混合物逐渐加入到 含有有机硅化合物(S1)和水的原料液体,同时保持硅化合物(S2)的量与有机硅的量 化合物(S1)在0.001 / min至0.3 / min的范围内。