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1. 发明授权

US5271768A Coating for forming an oxide coating 失效
标题翻译：用于形成氧化物涂层的涂层
公开(公告)号：US5271768A
公开(公告)日：1993-12-21
申请号：US982026
申请日：1992-11-24
申请人： Hiroyuki Morishima , Shun-ichiro Uchimura
发明人： Hiroyuki Morishima , Shun-ichiro Uchimura
IPC分类号： C23C18/12 , C09K15/02
CPC分类号： C23C18/1212
摘要： A coating fluid for forming an oxide coating, having a good thermal stability and superior coating-forming properties is provided, which fluid comprises a reaction product obtained by subjecting (A) an alkoxysilane or aryloxysilane expressed by the formula RmSi(OR).sub.4-m wherein R is 1-4C alkyl or aryl and m is 0 to 2 and (B) a metal alkoxide or aryloxide compound expressed by the formula M(OR').sub.n wherein M is Mg, B, P, Zr, Y, Ti or Ba, R' is 1-4C alkyl or aryl and n is a valence of the metal atom to hydrolysis and condensation using a catalyst in the presence of a solvent.
摘要翻译：提供了一种用于形成具有良好的热稳定性和优异的成膜性能的氧化物涂层的涂布液，该流体包含通过使（A）由式RmSi（OR）4-m表示的烷氧基硅烷或芳氧基硅烷其中R是1-4C烷基或芳基，m是0-2，和（B）由式M（OR'）n表示的金属醇盐或芳氧化物化合物，其中M是Mg，B，P，Zr，Y，Ti或 Ba，R'是1-4C烷基或芳基，n是金属原子的价态，以在溶剂存在下使用催化剂进行水解和缩合。

2. 发明授权

US4847358A Process for producing polyamide acid having siloxane bonds and polyimide having siloxane bonds and isoindoloquinazolinedione rings 失效
标题翻译：具有硅氧烷键的聚酰胺酸的制造方法和具有硅氧烷键和异吲哚喹啉二酮环的聚酰亚胺的制造方法
公开(公告)号：US4847358A
公开(公告)日：1989-07-11
申请号：US86892
申请日：1987-08-18
申请人： Mitsumasa Kojima , Takayuki Saito , Toul Kikuchi , Shun-ichiro Uchimura , Hidetaka Satou , Daisuke Makino
发明人： Mitsumasa Kojima , Takayuki Saito , Toul Kikuchi , Shun-ichiro Uchimura , Hidetaka Satou , Daisuke Makino
IPC分类号： C08G73/10
CPC分类号： C08G73/106
摘要： There are disclosed a process for producing a polyamide acid having at least one siloxane bond, which comprises carrying out the reaction of:(a) a tetracarboxylic dianhydride having at least one siloxane bond of the formula: ##STR1## wherein R represents a monovalent hydrocarbon group and m is an integer of 1 or more;(b) a diamine; and(c) a diaminoamide compound of the formula (II): ##STR2## wherein Ar represents an aromatic residue, Y represents SO.sub.2 or CO, and one amino group and Y--YNH.sub.2 are positioned in ortho-position to each other,and optinal presence of(d) an aromatic tetracarboxylic dianhydride;with the total amount of the diamine and the diaminoamide compound and the total amount of the tetracarboxylic dianhydride of the formula (I) and the aromatic tetracarboxylic dianhydride optionally contained being substantially equal moles;and a process for producing a polyimide having at least one siloxane bond and at least one isoindoloquinazolinedione ring, which comprises further heating the resulting polyamide acid to dehydration ring closure.
摘要翻译：公开了一种制备具有至少一个硅氧烷键的聚酰胺酸的方法，该方法包括进行以下反应：（a）具有至少一个具有下式的硅氧烷键的四羧酸二酐：其中R表示一价烃基，m为1以上的整数，（b）二胺; 和（c）式（II）的二氨基酰胺化合物：其中Ar表示芳族残基，Y表示SO 2或CO，一个氨基和Y-YNH 2彼此相邻位置，和（d）芳族四羧酸二酐的选择性存在; 二胺和二氨基酰胺化合物的总量和式（I）的四羧酸二酐和任选地含有的芳族四羧酸二酐的总量基本相等; 以及生产具有至少一个硅氧烷键和至少一个异吲哚喹啉二酮环的聚酰亚胺的方法，其包括进一步将所得聚酰胺酸加热至脱水闭环。

3. 发明授权

US4645688A Composition for protective coating material 失效
标题翻译：保护涂层材料的组成
公开(公告)号：US4645688A
公开(公告)日：1987-02-24
申请号：US679460
申请日：1984-12-07
申请人： Daisuke Makino , Hidetaka Sato , Hiroshi Suzuki , Shun-ichiro Uchimura , Hiroshi Suzuki
发明人： Daisuke Makino , Hidetaka Sato , Hiroshi Suzuki , Shun-ichiro Uchimura , Hiroshi Suzuki
IPC分类号： C08G73/10 , C08G77/54 , H01B3/30 , H01B3/46 , H01L23/29 , B05D5/12
CPC分类号： C08G77/54 , C08G73/1042 , C08G73/106 , H01B3/303 , H01B3/46 , H01L23/296 , H01L2924/0002
摘要： There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.
摘要翻译：公开了一种用于保护涂层材料的组合物，优选用于半导体器件的保护涂层材料，其由半导体存储元件的主要元件，包含用于封装所述元件的无机材料的封装层和固化保护层布置在所述存储元件和所述封装层之间的涂料，其由通过二氨基硅氧烷，不含硅的有机二胺和有机四元酸二酐反应获得的聚酰胺酸和具有固化的层的半导体器件由通过上述聚酰胺酸脱水闭环得到的聚酰亚胺 - 硅氧烷共聚物构成的保护涂料。

4. 发明授权

US4758476A Polyimide precursor resin composition and semiconductor device using the same 失效
标题翻译：聚酰亚胺前体树脂组合物及其使用的半导体装置
公开(公告)号：US4758476A
公开(公告)日：1988-07-19
申请号：US806805
申请日：1985-12-10
申请人： Hiroyoshi Sekine , Hiroshi Suzuki , Hidetaka Sato , Shun-ichiro Uchimura , Daisuke Makino
发明人： Hiroyoshi Sekine , Hiroshi Suzuki , Hidetaka Sato , Shun-ichiro Uchimura , Daisuke Makino
IPC分类号： C08G73/10 , C08K5/544 , C08L79/08 , H01B3/30 , H01L21/312 , B32B27/06 , B32B15/08 , C08G77/04
CPC分类号： H01L21/3122 , C08G73/106 , C08K5/544 , C08L79/08 , H01B3/306 , H01L21/02126 , H01L21/02216 , H01L21/02282 , Y10S428/929 , Y10T428/31612 , Y10T428/31681 , Y10T428/31721
摘要： A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.
摘要翻译：包含（a）含有硅氧烷键的聚（酰胺酸），（b）氨基硅烷和（c）用于组分（a）和（b）的溶剂的聚酰亚胺前体树脂组合物可以形成优异的聚酰亚胺膜粘合性和耐热性，并且适用于制造具有高可靠性的半导体器件。

5. 发明授权

US4511705A Composition for protective coating material 失效
公开(公告)号：US4511705A
公开(公告)日：1985-04-16
申请号：US568284
申请日：1984-01-05
申请人： Daisuke Makino , Hidetaka Sato , Hiroshi Suzuki , Shun-ichiro Uchimura , Hiroshi Suzuki
发明人： Daisuke Makino , Hidetaka Sato , Hiroshi Suzuki , Shun-ichiro Uchimura , Hiroshi Suzuki
IPC分类号： C08G73/10 , C08G77/54 , H01B3/30 , H01B3/46 , H01L23/29 , C08G77/04
CPC分类号： C08G77/54 , C08G73/1042 , C08G73/106 , H01B3/303 , H01B3/46 , H01L23/296 , H01L2924/0002
摘要： There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

6. 发明授权

US5165957A Process for producing multilayer wiring structure 失效
标题翻译：多层布线结构的制造方法
公开(公告)号：US5165957A
公开(公告)日：1992-11-24
申请号：US593309
申请日：1990-10-04
申请人： Shun-ichiro Uchimura , Hiroshi Suzuki , Hidetaka Sato
发明人： Shun-ichiro Uchimura , Hiroshi Suzuki , Hidetaka Sato
IPC分类号： H01L21/768 , G03F7/09 , H01B3/30 , H01L21/31 , H01L21/312 , H01L21/3205 , H01L21/48 , H01L23/522 , H05K1/00 , H05K1/03
CPC分类号： H01B3/306 , G03F7/094 , H01L21/4846 , H05K1/0346 , H05K3/4676
摘要： A multilayer wiring structure produced by using a special poly(amic acid) ester oligomer for making an interlayer insulating film has an almost flattened surface without suffering from level differences of underlying wiring patterns.
摘要翻译：通过使用特殊的聚（酰胺酸）酯低聚物制造层间绝缘膜制备的多层布线结构具有几乎平坦的表面，而不会受到下面布线图案的水平差异的影响。

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