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1. 发明授权

US06800871B2 Display device and process of producing the same 失效
标题翻译：显示装置及其制作方法
公开(公告)号：US06800871B2
公开(公告)日：2004-10-05
申请号：US10327147
申请日：2002-12-24
申请人： Hiroshi Matsuda , Takao Yonehara , Etsuro Kishi , Tsutomu Ikeda , Kiyofumi Sakaguchi
发明人： Hiroshi Matsuda , Takao Yonehara , Etsuro Kishi , Tsutomu Ikeda , Kiyofumi Sakaguchi
IPC分类号： H01L3900
CPC分类号： H01L21/76259 , H01L21/76254
摘要： The present invention relates to a configuration of a display element and forms switching circuits or peripheral circuits for driving pixels by transferring/disposing a semiconductor circuit formed on another substrate and disposes high performance transistors on the display substrate. The present invention also relates to a process of forming a circuit having switching elements for driving pixels and peripheral circuits for sending drive signals thereto on the substrate of the display element. A separation layer is formed on a second substrate and a semiconductor film is formed thereon. This semiconductor film having predetermined semiconductor circuits formed therein is bonded to the substrate of the display element and then electrical connection with a wire on the substrate is effected.
摘要翻译：本发明涉及显示元件的结构，并且通过转印/布置形成在另一基板上的半导体电路并形成显示基板上的高性能晶体管，形成用于驱动像素的开关电路或外围电路。本发明还涉及形成具有用于驱动像素的开关元件和用于在显示元件的基板上发送驱动信号的外围电路的电路的处理。在第二基板上形成分离层，在其上形成半导体膜。其中形成有预定半导体电路的该半导体膜被结合到显示元件的基板，然后实现与基板上的导线的电连接。

2. 发明授权

US07148119B1 Process for production of semiconductor substrate 有权
标题翻译：半导体基板的制造方法
公开(公告)号：US07148119B1
公开(公告)日：2006-12-12
申请号：US09161774
申请日：1998-09-29
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L23/12
CPC分类号： H01L21/6835 , H01L21/76259 , H01L2221/68363
摘要： A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
摘要翻译：提供了一种制造半导体衬底的方法，其包括在第一衬底上形成多孔层的步骤，在第一衬底的多孔层上形成无孔单晶半导体层，将无孔单晶层接合到第二衬底上，在多孔层上的基底，去除第二基底上的多孔层，以及去除构成第一基底的多孔层。

3. 发明授权

US06891578B2 Method of manufacturing a thin-film semiconductor device used for a display region and peripheral circuit region 失效
标题翻译：制造用于显示区域和外围电路区域的薄膜半导体器件的方法
公开(公告)号：US06891578B2
公开(公告)日：2005-05-10
申请号：US10059171
申请日：2002-01-31
申请人： Takao Yonehara , Kiyofumi Sakaguchi
发明人： Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： G02F1/1368 , G02F1/1362 , G09F9/00 , G09F9/30 , H01L21/02 , H01L21/205 , H01L21/336 , H01L27/12 , H01L29/786 , G02F1/136
CPC分类号： G02F1/13454 , G02F1/136277 , G02F2202/105 , G02F2203/01
摘要： A thin-film semiconductor device used for a display region and peripheral circuit region and a method of manufacturing the same are provided. A method of manufacturing a display device includes the step of preparing a member having, on a separation layer, a semiconductor film having a first region with a switching element and a second region with a peripheral circuit, the step of forming an image display portion on the first region, and the separation step of separating the first and second regions from the member.
摘要翻译：提供了用于显示区域和外围电路区域的薄膜半导体器件及其制造方法。一种制造显示装置的方法包括以下步骤：在分离层上制备具有开关元件的第一区域的半导体膜和具有外围电路的第二区域的部件，形成图像显示部分的步骤第一区域以及从构件分离第一区域和第二区域的分离步骤。

4. 发明授权

US06860963B2 Sample separating apparatus and method, and substrate manufacturing method 失效
标题翻译：样品分离装置和方法，以及基板制造方法
公开(公告)号：US06860963B2
公开(公告)日：2005-03-01
申请号：US10318231
申请日：2002-12-12
申请人： Kazutaka Yanagita , Takao Yonehara , Kazuaki Omi , Kiyofumi Sakaguchi
发明人： Kazutaka Yanagita , Takao Yonehara , Kazuaki Omi , Kiyofumi Sakaguchi
IPC分类号： B26D3/28 , B26D7/04 , B26F3/00 , H01L21/00 , H01L21/301 , H01L21/304 , H01L21/68 , H01L21/76 , B32B35/00
CPC分类号： H01L21/6835 , B26F3/004 , H01L21/67092 , H01L2221/68363 , H01L2924/30105 , Y10S156/941 , Y10T29/49821 , Y10T83/364 , Y10T156/11 , Y10T156/1126 , Y10T156/1137 , Y10T156/19 , Y10T156/1928 , Y10T156/1933 , Y10T156/1939
摘要： This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (102), so the jet is injected into the bonded substrate stack (101). The substrate holding portions (120, 150) hold the bonded substrate stack (101) such that the bonded substrate stack (101) can expand at its central portion due to the pressure of the injected water. This efficiently applies a force (separation force) that acts outward from the inside of the bonded substrate stack (101).
摘要翻译：本发明提供一种用于在多孔层处分离具有多孔层的基板的装置。具有多孔层（101b）的键合衬底叠层（101）在旋转的同时由衬底保持部（120,150）支撑。从喷嘴（102）喷出高速，高压的水（射流），将射流喷射到键合衬底叠层（101）中。衬底保持部分（120,150）保持键合衬底叠层（101），使得键合衬底叠层（101）可以由于注入的水的压力而在其中心部分膨胀。这有效地施加从键合衬底叠层（101）的内部向外作用的力（分离力）。

5. 发明授权

US06773534B2 Sample processing apparatus and method 失效
标题翻译：样品处理设备和方法
公开(公告)号：US06773534B2
公开(公告)日：2004-08-10
申请号：US10175201
申请日：2002-06-20
申请人： Kazutaka Yanagita , Takao Yonehara , Kazuaki Omi , Kiyofumi Sakaguchi
发明人： Kazutaka Yanagita , Takao Yonehara , Kazuaki Omi , Kiyofumi Sakaguchi
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , Y10S156/942 , Y10T29/49821 , Y10T83/364 , Y10T156/1121 , Y10T156/1126 , Y10T156/1374 , Y10T156/1922 , Y10T156/1939 , Y10T156/1978
摘要： This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively. More specifically, the first region is separated by a jet ejected from a nozzle (102) while rotating the bonded substrate stack (101). On the other hand, the second region is separated by an ultrasonic wave generated by an ultrasonic vibrator (1203).
摘要翻译：本发明可以防止当具有分离层的键合衬底叠层分离时产生的缺陷。具有多孔层（101b）的键合衬底叠层（101）在第一和第二工艺的两个步骤中分离。在第一种方法中，一边旋转键合衬底叠层（101），一边将多孔层（101b）的中央部分离开而分离出键合衬底叠层（101），一边喷射到多孔层（101b）地区。在第二过程中，当停止键合衬底叠层（101）的旋转时，射流被喷射到多孔层（101b）。从预定方向向未分离区域施加力，以完全分离键合衬底叠层（101）。此外，分别使用喷射和超声波分离具有多孔层（101b）的键合衬底叠层（101）的第一区域（周边部分）和第二区域（中心部分）。更具体地，在旋转键合衬底叠层（101）的同时，通过从喷嘴（102）喷出的射流来分离第一区域。另一方面，第二区域由超声波振子（1203）产生的超声波分离。

6. 发明授权

US06746559B2 Method and apparatus for separating composite member using fluid 有权
公开(公告)号：US06746559B2
公开(公告)日：2004-06-08
申请号：US10202022
申请日：2002-07-25
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , H01L21/6838 , Y10T29/49821 , Y10T83/364 , Y10T156/1137 , Y10T156/1374 , Y10T156/1922 , Y10T156/1933 , Y10T156/1939
摘要： To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

7. 发明授权

US06656271B2 Method of manufacturing semiconductor wafer method of using and utilizing the same 失效
标题翻译：使用和利用半导体晶片方法的方法
公开(公告)号：US06656271B2
公开(公告)日：2003-12-02
申请号：US09453539
申请日：1999-12-03
申请人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
发明人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
IPC分类号： C30B2518
CPC分类号： H01L21/76251 , H01L21/76259 , Y10S117/913
摘要： A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.
摘要翻译：一种半导体晶片的制造方法，其具有优异的批量生产和再现性的适用性。该方法包括以下步骤：在半导体衬底上制备具有单晶半导体层的第一构件，其间分隔层以半导体晶片为原料，将单晶半导体层转移到第二构件上，该第二构件包括半导体晶片通过分离层分离单晶半导体层，并且在转印步骤之后使半导体衬底的表面平滑，以便用作除了形成第一和第二构件之外的目的的半导体晶片。

8. 发明授权

US06468923B1 Method of producing semiconductor member 失效
标题翻译：半导体部件的制造方法
公开(公告)号：US06468923B1
公开(公告)日：2002-10-22
申请号：US09534340
申请日：2000-03-24
申请人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
发明人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
IPC分类号： H01L2131
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/76254 , H01L21/76259
摘要： A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from which the non-porous layer is separated in the second step as a constituent material of the first member in the first step is conducted (n−1) times (“n” is a natural number not less than 2), the first and second steps are repeated n times, the semiconductor substrate is separated in n-th use in the second step and the separated semiconductor substrate is used for an use other than that of the first and second steps.
摘要翻译：制造半导体构件的方法包括：在半导体衬底上制备具有无孔层的第一构件的第一步骤和将第一构件的无孔层转移到第二构件上的第二步骤，其中使用进行第一步骤中作为第一部件的构成材料的第二步骤中的无孔层从其分离的半导体衬底（n-1）次（“n”是不小于2的自然数），第一步骤和第二步骤重复n次，在第二步骤中第n次使用半导体衬底被分离，并且分离的半导体衬底用于除了第一和第二步骤之外的用途。

9. 发明授权

US06429095B1 Semiconductor article and method of manufacturing the same 失效
标题翻译：半导体制品及其制造方法
公开(公告)号：US06429095B1
公开(公告)日：2002-08-06
申请号：US09920658
申请日：2001-08-03
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L2176
CPC分类号： H01L21/2007 , H01L21/76259
摘要： A method of manufacturing a semiconductor article comprises forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding the first article and a second article so as to produce a multilayer structure having the porous layer in the inside thereof, and separating the multilayer structure along the porous layer.
摘要翻译：一种制造半导体产品的方法包括：形成含有能够至少在半导体衬底的一个表面上控制导电类型的元件的掺杂层，将掺杂层的表面修改为多孔状态以获得多孔层更薄在所述多孔层上形成无孔层以制备第一制品，将所述第一制品和第二制品接合以产生其内部具有所述多孔层的多层结构，并且分离所述多层结构体沿多孔层。

10. 发明授权

US06190937B1 Method of producing semiconductor member and method of producing solar cell 失效
标题翻译：制造半导体元件的方法和太阳能电池的制造方法
公开(公告)号：US06190937B1
公开(公告)日：2001-02-20
申请号：US08999132
申请日：1997-12-29
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2176
CPC分类号： H01L21/02032 , C30B19/12 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/02664 , H01L21/2007 , H01L21/3063 , H01L21/76251 , H01L29/66772 , H01L29/78654 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L33/0062 , H01L2221/68368 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
摘要翻译：为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔（b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

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