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1. 发明授权

US5928910A Antifungal substances BE-49385 and process for their production 失效
标题翻译：抗菌物质BE-49385及其生产方法
公开(公告)号：US5928910A
公开(公告)日：1999-07-27
申请号：US68556
申请日：1998-05-19
申请人： Hiroshi Kushida , Shigeru Nakajima , Shigeru Uchiyama , Masao Nagashima , Katsuhisa Kojiri , Kenji Kawamura , Hiroyuki Suda
发明人： Hiroshi Kushida , Shigeru Nakajima , Shigeru Uchiyama , Masao Nagashima , Katsuhisa Kojiri , Kenji Kawamura , Hiroyuki Suda
IPC分类号： A61K31/366 , C07D311/94 , C12P17/06 , A61K31/35 , C07D311/78 , C12P15/00
CPC分类号： A61K31/366 , C07D311/94 , C12P17/06
摘要： The present invention relates to a compound represented by the general formula (I): ##STR1## wherein R.sub.1 is a hydrogen atom, or ##STR2## and R.sub.2 is a hydrogen atom or OH and R.sub.2 is a hydrogen atom or a lower alkanoyl group, and an antifungal agent containing it as an active ingredient.
摘要翻译： PCT No.PCT / JP96 / 03354 Sec。 371日期1998年5月19日 102（e）日期1998年5月19日PCT提交1996年11月15日PCT公布。 WO97 / 19186 PCT公开号日期：1997年5月29日本发明涉及由通式（I）表示的化合物：其中R1为氢原子，R2为氢原子或OH，R2为氢原子或低级烷酰基，含有它作为活性成分的抗真菌剂。

2. 发明授权

US5334613A Antibacterial substance BE-24566B 失效
标题翻译：抗菌物质BE-24566B
公开(公告)号：US5334613A
公开(公告)日：1994-08-02
申请号：US974460
申请日：1992-11-12
申请人： Katsuhisa Kojiri , Shigeru Nakajima , Aisaku Fuse , Hiroyuki Suda
发明人： Katsuhisa Kojiri , Shigeru Nakajima , Aisaku Fuse , Hiroyuki Suda
IPC分类号： C07D493/08 , C12P17/18 , A01N43/32 , C07D319/08
CPC分类号： C07D493/08 , C12P17/181 , C12R1/465
摘要： Herein disclosed are an antibacterial substance: BE-24566B represented by the following structural formula (I): ##STR1## or a pharmaceutically acceptable salt thereof; and an antibacterial agent comprising, as an essential component, the foregoing antibacterial substance: BE-24566B or a pharmaceutically acceptable salt thereof. The antibacterial substance BE-24566B or pharmaceutically acceptable salts thereof can be prepared according to a method comprising the steps of inoculating an antibacterial substance: BE-24566B-producing microorganism or a variant thereof into a culture medium to cultivate the microorganism or variant, in particular the strain FERM BP-3994 or a variant thereof, and isolating the intracellularly and/or extracellularly produced antibacterial substance. The substance BE-24566B exhibits potent antibacterial effect on gram-positive bacteria represented by methicillin-resistant Staphylococcus aureus and, therefore, very useful as a therapeutic agent for treating a variety of infectious diseases caused by gram-positive bacteria.
摘要翻译：本文公开的是抗菌物质：由以下结构式（I）表示的BE-24566B：其中R 1，R 2，以及作为必要成分的上述抗菌物质BE-24566B或其药学上可接受的盐的抗菌剂。抗菌物质BE-24566B或其药学上可接受的盐可以根据包括以下步骤的方法制备：将抗菌物质：BE-24566B生产微生物或其变体接种到培养基中以培养微生物或变体，特别是菌株FERM BP-3994或其变体，并分离细胞内和/或细胞外产生的抗菌物质。物质BE-24566B对由耐甲氧西林金黄色葡萄球菌代表的革兰氏阳性细菌表现出强烈的抗菌作用，因此作为用于治疗由革兰氏阳性细菌引起的各种感染性疾病的治疗剂非常有用。

3. 发明授权

US5391486A Physiologically active substance BE-16627 失效
标题翻译：生理活性物质BE-16627
公开(公告)号：US5391486A
公开(公告)日：1995-02-21
申请号：US720828
申请日：1991-07-11
申请人： Akira Okuyama , Nobuo Kanbayashi , Kyozo Naito , Hajime Suzuki , Shigeru Nakajima , Hiroyuki Suda , Masanori Okanishi
发明人： Akira Okuyama , Nobuo Kanbayashi , Kyozo Naito , Hajime Suzuki , Shigeru Nakajima , Hiroyuki Suda , Masanori Okanishi
IPC分类号： A61K38/00 , C07K5/06 , C07C229/08 , C12N1/20 , C12P21/02
CPC分类号： C12R1/465 , C07K5/06069 , A61K38/00
摘要： The present invention relates to new stromelysin (human)-inhibitors, i.e., physiologically active substances BE-16627 represented by the general formula: ##STR1## wherein R represents a hydrogen atom or a methyl group, or pharmaceutically acceptable salts thereof, a process for the production and use thereof, and a microorganism producing the substance BE-16627.
摘要翻译：本发明涉及新的基质溶素（人）抑制剂，即由以下通式表示的生理活性物质BE-16627：其中R表示氢原子或甲基，或药学上可接受的其盐，其生产和使用的方法，以及产生物质BE-16627的微生物。

4. 发明授权

US08124181B2 Oxidation method providing parallel gas flow over substrates in a semiconductor process 有权
标题翻译：在半导体工艺中在衬底上提供平行气流的氧化方法
公开(公告)号：US08124181B2
公开(公告)日：2012-02-28
申请号：US11907968
申请日：2007-10-18
申请人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Takehiko Fujita , Shigeru Nakajima , Jun Ogawa
IPC分类号： C23C16/40
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method includes supplying oxidizing and deoxidizing gases to a process field by spouting the gases in lateral directions respectively from first and second groups of gas spouting holes. Each group of holes is disposed adjacent to target substrates on one side of the process field and arrayed over a length corresponding to the process field in a vertical direction. Gases are exhausted through an exhaust port disposed opposite to the first and second groups of gas spouting holes with the process field interposed therebetween and present over a length corresponding to the process field in the vertical direction. This causes the gases to flow along the surfaces of the target substrates, thus forming gas flows parallel with the target substrates. The process field is heated by a heater disposed around the process container to generate oxygen radicals and hydroxyl group radicals within the process field.
摘要翻译：氧化方法包括通过分别从第一和第二组气体喷射孔喷射气体在横向方向向工艺场提供氧化和脱氧气体。每组孔与过程场一侧的目标衬底相邻设置，并且在垂直方向上排列在对应于过程场的长度上。气体通过与第一和第二组气体喷射孔相对设置的排气口排出，其中过程场介于它们之间并且在垂直方向上存在超过对应于过程场的长度。这使得气体沿着目标基板的表面流动，从而形成与目标基板平行的气体流。工艺场由设置在加工容器周围的加热器加热，以在工艺场内产生氧自由基和羟基自由基。

5. 发明申请

US20110065280A1 MASK PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：掩模形成方法和半导体器件制造方法
公开(公告)号：US20110065280A1
公开(公告)日：2011-03-17
申请号：US12852543
申请日：2010-08-09
申请人： Shigeru Nakajima , Kazuhide Hasebe , Hidetami Yaegashi , Eiichi Nishimura
发明人： Shigeru Nakajima , Kazuhide Hasebe , Hidetami Yaegashi , Eiichi Nishimura
IPC分类号： H01L21/306
CPC分类号： H01L21/31144 , C23C16/26 , C23C16/34 , C23C16/45542 , H01J37/32082 , H01L21/02115 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/31122 , H01L21/32135
摘要： The method includes a film-forming process which forms a carbon film, to isotropically coat a surface of a silicon film pattern in which a first line portion formed of a silicon film that is formed on a target etching film on a substrate is arranged, an etchback process which etches back the carbon film such that the carbon film is removed from an upper portion of the first line portion and remains as a side wall portion of the first line portion, and a silicon film removing process which forms a mask pattern in which the side wall portion is arranged, by removing the first line portion.
摘要翻译：该方法包括一个形成碳膜的成膜方法，以均匀地涂覆硅衬底上形成在靶蚀刻膜上的由硅膜形成的第一线部分的硅膜图案的表面，回蚀处理，其蚀刻碳膜，使得碳膜从第一线部分的上部被去除并保留为第一线部分的侧壁部分，以及硅膜去除工艺，其形成掩模图案，其中通过移除第一线部分来布置侧壁部分。

6. 发明申请

US20080163838A1 Valve Timing Control Apparatus 有权
标题翻译：气门正时控制装置
公开(公告)号：US20080163838A1
公开(公告)日：2008-07-10
申请号：US11885761
申请日：2006-02-10
申请人： Taiyu Iwata , Kenji Fujiwaki , Shigeru Nakajima
发明人： Taiyu Iwata , Kenji Fujiwaki , Shigeru Nakajima
IPC分类号： F01L1/344
CPC分类号： F01L1/022 , F01L1/3442 , F01L2001/34436 , F01L2001/34473 , F01L2001/34483
摘要： A valve timing control apparatus is provided having a locking mechanism that can minimize the accumulation of foreign material in a concave engagement part, can minimize the penetration of foreign material to the sliding parts of a locking member, and can reduce the sliding resistance of the locking member. A locking mechanism (5) is provided with a sliding groove (52) provided to an outer rotor (2); a locking member (53) capable of sliding along the sliding groove (52); and a concave engagement part (51) that is provided to the inner rotor (3), is formed to be capable of engaging with the locking member (53) in a state in which the phase of relative rotation is a lock phase, and has an inlet port (58) capable of introducing hydraulic fluid. Flow channels (57) for hydraulic fluid are provided to at least one of the sliding groove (52) and the locking member (53), are formed along the sliding direction of the locking member (53), and are communicatingly connected to the concave engagement part (51).
摘要翻译：一种气门正时控制装置，其具有锁定机构，该锁定机构可使外部材料在凹形接合部分中的积聚最小化，能够最大限度地减少外部材料对锁定构件的滑动部分的渗透，并且可以降低锁定的滑动阻力会员。锁定机构（5）设置有设置在外转子（2）上的滑动槽（52）; 能够沿着滑动槽（52）滑动的锁定构件（53）。以及设置在所述内转子（3）上的凹形卡合部（51），能够以相对旋转相位为锁定相的状态与所述卡定部件（53）卡合，能够引入液压流体的入口（58）。用于液压流体的流动通道（57）设置在滑动槽（52）和锁定构件（53）中的至少一个上，沿着锁定构件（53）的滑动方向形成，并且连通地连接到凹部接合部（51）。

7. 发明申请

US20050245099A1 Film formation apparatus and method of using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20050245099A1
公开(公告)日：2005-11-03
申请号：US11110931
申请日：2005-04-21
申请人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
发明人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
IPC分类号： B08B5/00 , B08B7/00 , B08B7/04 , C23C16/00 , C23C16/44 , H01L21/304 , H01L21/3065 , H01L21/31 , H01L21/469
CPC分类号： B08B7/0035 , C23C16/4405 , Y10S438/90
摘要： A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.
摘要翻译：使用半导体工艺的成膜装置的方法包括除去沉积在成膜装置的反应室的内表面上的副产物膜的步骤。在向反应室供给含有氟化氢的清洁气体的同时进行该步骤，并且在反应室内形成允许水以液膜形式存在的第一气氛。

8. 发明申请

US20050087713A1 Valve opening-closing timing control device 有权
标题翻译：阀门开闭正时控制装置
公开(公告)号：US20050087713A1
公开(公告)日：2005-04-28
申请号：US10927393
申请日：2004-08-27
申请人： Yoshiyuki Kawai , Masaki Kobayashi , Shigeru Nakajima
发明人： Yoshiyuki Kawai , Masaki Kobayashi , Shigeru Nakajima
IPC分类号： F01L1/34 , F01L1/344 , F16K35/00
CPC分类号： F01L1/3442 , F01L1/022 , F01L2001/34453 , F01L2001/34483
摘要： A valve opening-closing timing control device includes a housing member rotating together with one of a cam shaft and a crank shaft of a combustion engine, a rotor member rotatably attached to said housing member; and rotating together with the other of said crank shaft and said cam shaft, a hydraulic pressure chamber formed between said housing member and said rotor member, the hydraulic pressure chamber being divided into an advance angle hydraulic chamber and a retard angle hydraulic chamber by a vane integrally provided with said rotor member, a lock mechanism including a lock member movably provided at the housing member and a receiving portion formed at said rotor member for receiving the lock member, whereby the lock mechanism restricts a relative rotation between the rotor member and the housing member by advancing the lock member into the receiving portion and allows the relative rotation between the rotor member and the housing member by retracting the lock member from the receiving portion, a hydraulic pressure circuit for supplying hydraulic fluid to said advance angle hydraulic chamber, said retard angle hydraulic chamber, and said lock mechanism, and a projecting portion formed at a bottom of said receiving portion and including a top end face smaller than a sectional area of said lock member.
摘要翻译：一种开阀正时控制装置，包括与内燃机的凸轮轴和曲轴中的一个一起旋转的壳体构件，可旋转地附接到所述壳体构件的转子构件; 并与所述曲轴和所述凸轮轴中的另一个一起旋转，形成在所述壳体构件和所述转子构件之间的液压室，所述液压室被叶片分为前进角液压室和延迟角液压室与所述转子构件一体设置的锁定机构，包括可移动地设置在所述壳体构件上的锁定构件和形成在所述转子构件处的用于接收所述锁定构件的容纳部的锁定机构，由此所述锁定机构限制所述转子构件与所述壳体之间的相对旋转构件，其通过使所述锁定构件进入所述接收部，并且通过使所述锁定构件从所述接收部收回而允许所述转子构件与所述壳体构件之间的相对旋转;液压回路，用于向所述提前角液压室供给液压流体，所述延迟角度液压室和所述锁定机构，以及形成在其上的突出部分所述接收部分的底部包括小于所述锁定构件的截面面积的顶端面。

9. 发明授权

US06482720B2 Method for manufacturing compound semiconductor device 有权
公开(公告)号：US06482720B2
公开(公告)日：2002-11-19
申请号：US09842319
申请日：2001-04-26
申请人： Takashi Sugino , Shigeru Nakajima
发明人： Takashi Sugino , Shigeru Nakajima
IPC分类号： H01L21322
CPC分类号： H01L29/66462 , H01L21/306
摘要： In manufacturing compound semiconductor device, a plasma treatment is carried out by exposing surface of compound semiconductor material including AlAs or InAs exposing in atmosphere at manufacturing process in plasma of gas including any of P, N, H, and Ar at substrate temperature of less than 200° C. Desirably a second plasma treatment is carried out by exposing said compound semiconductor material in plasma of gas including p at higher substrate temperature continuously after said plasma treatment without taking the substrate out in air.

10. 发明授权

US5878782A Switching valve 失效
标题翻译：切换阀
公开(公告)号：US5878782A
公开(公告)日：1999-03-09
申请号：US703873
申请日：1996-08-27
申请人： Shigeru Nakajima
发明人： Shigeru Nakajima
IPC分类号： F01L1/34 , F01L1/344 , F16K11/07 , F16K31/06 , F15B13/044
CPC分类号： F16K31/0613 , F01L1/3442 , F16K11/0716 , F01L2001/34426 , Y10T137/86622 , Y10T137/86702
摘要： A switching valve has a cylindrical housing including a bore, an inlet port, a first inlet-outlet port, and a second inlet-outlet port which open to the hollow. A valve member slidably disposed in the bore has a ringed groove around its periphery. The valve member can open or block a portion between the groove and the first inlet-outlet port and a portion between the groove and the second inlet-outlet port. The groove formed outside the valve member always communicates with the inlet port and can communicate with the first and second inlet-outlet ports. A single drain port is formed within the valve member so that the single drain port can communicate with the first and second inlet-outlet ports. The valve member is caused to slide by a solenoid.
摘要翻译：切换阀具有圆柱形壳体，该圆柱形壳体包括孔，入口，第一入口 - 出口和向中空开口的第二入口 - 出口。可滑动地设置在孔中的阀构件具有围绕其周边的环形槽。阀构件可以打开或阻挡凹槽和第一入口 - 出口之间的部分以及凹槽和第二入口 - 出口之间的部分。形成在阀构件外部的凹槽总是与入口连通并且可以与第一和第二入口 - 出口连通。单个排出口形成在阀构件内，使得单个排出口能够与第一和第二入口 - 出口连通。阀构件被螺线管滑动。

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