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1. 发明授权

US06482720B2 Method for manufacturing compound semiconductor device 有权
公开(公告)号：US06482720B2
公开(公告)日：2002-11-19
申请号：US09842319
申请日：2001-04-26
申请人： Takashi Sugino , Shigeru Nakajima
发明人： Takashi Sugino , Shigeru Nakajima
IPC分类号： H01L21322
CPC分类号： H01L29/66462 , H01L21/306
摘要： In manufacturing compound semiconductor device, a plasma treatment is carried out by exposing surface of compound semiconductor material including AlAs or InAs exposing in atmosphere at manufacturing process in plasma of gas including any of P, N, H, and Ar at substrate temperature of less than 200° C. Desirably a second plasma treatment is carried out by exposing said compound semiconductor material in plasma of gas including p at higher substrate temperature continuously after said plasma treatment without taking the substrate out in air.

2. 发明授权

US4546478A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4546478A
公开(公告)日：1985-10-08
申请号：US614390
申请日：1984-05-25
申请人： Hirokazu Shimizu , Kunio Itoh , Takashi Sugino , Masaru Wada
发明人： Hirokazu Shimizu , Kunio Itoh , Takashi Sugino , Masaru Wada
IPC分类号： H01S5/00 , H01L21/60 , H01S5/02 , H01S3/19
CPC分类号： H01S5/02252 , H01L2224/32057 , H01L2224/83385 , H01L2224/83801 , H01L24/31 , H01L24/83 , H01L2924/01014 , H01L2924/12042
摘要： A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means, or by engaging a square recess as a first engaging means and the square bottom of the sub-mount as a second engaging means with each other. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.
摘要翻译：提高半导体激光芯片在散热片或金属安装座上的安装，以实现高精度的位置和方向。安装有半导体激光芯片的散热器或金属安装件包括两部分，即主安装件或更大部分和副安装件或更小部件。利用显微镜将半导体激光芯片通过焊接层焊接在子座上，以确保相对于子安装座的精确位置和准确的方向。然后，通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合，通过焊接层将焊接层焊接在主安装座上，焊接层的位置和方向都精确，后端面作为第二接合装置，或者通过将作为第一接合装置的方形凹槽和副安装座的方形底部彼此接合作为第二接合装置。作为上述结构的结果，可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

3. 发明授权

US4380861A Method of making a semiconductor laser by liquid phase epitaxial growths 失效
标题翻译：通过液相外延生长制造半导体激光器的方法
公开(公告)号：US4380861A
公开(公告)日：1983-04-26
申请号：US266134
申请日：1981-05-21
申请人： Takashi Sugino , Kunio Itoh
发明人： Takashi Sugino , Kunio Itoh
IPC分类号： H01S5/223 , H01L21/208
CPC分类号： H01S5/2238
摘要： In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,the improvement is that said substrate has a terrace part on its principle face,said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region in between andsaid stripe shape active region is disposed with a specified angle to said principle face.
摘要翻译：在包括在半导体衬底上外延形成的有源层和限定条形电流注入区的至少限流层的半导体激光器中，改进之处在于，所述衬底在其原理面上具有露台部分，所述有源层具有两个平行的弯曲部分，其限定面向所述电流注入区域的条状形状有源区域，并且所述条形形状有源区域以与所述原理面形成特定角度设置。

4. 发明授权

US4371967A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4371967A
公开(公告)日：1983-02-01
申请号：US215665
申请日：1980-12-12
申请人： Masaru Wada , Hirokazu Shimizu , Takashi Sugino , Kunio Itoh
发明人： Masaru Wada , Hirokazu Shimizu , Takashi Sugino , Kunio Itoh
IPC分类号： H01S5/00 , H01S5/30 , H01S5/323 , H01S3/19
CPC分类号： H01S5/305 , H01S5/32308 , Y10S438/916
摘要： In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.
摘要翻译：在半导体衬底上具有包括有源层的外延层的半导体激光器中，形成与有源层相邻的缓冲层，以便防止高度扩散的掺杂剂（Zn）从相邻层（例如作为第二包覆层。缓冲层具有与相邻层相同的导电性，具有比有源层更宽的能隙，并且缓冲层的掺杂剂比相邻层的扩散更少。

5. 发明授权

US07408259B2 Sheet to form a protective film for chips 有权
标题翻译：片材形成芯片保护膜
公开(公告)号：US07408259B2
公开(公告)日：2008-08-05
申请号：US11113480
申请日：2005-04-25
申请人： Hideo Senoo , Takashi Sugino , Osamu Yamazaki
发明人： Hideo Senoo , Takashi Sugino , Osamu Yamazaki
IPC分类号： H01L23/12 , H01L23/053
CPC分类号： H01L23/3164 , H01L21/6836 , H01L21/78 , H01L23/293 , H01L23/562 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/83855 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/0665 , H01L2924/07802 , H01L2924/181 , H01L2924/3025 , Y10T428/14 , H01L2924/0635 , H01L2924/00 , H01L2924/3512
摘要： A sheet to form a protective film for chips includes a release sheet and a protective film forming layer formed on a detachable surface of the release sheet. The protective film forming layer includes a thermosetting and/or energy ray-curable component and a binder polymer component.
摘要翻译：形成芯片保护膜的片材包括形成在剥离片的可拆卸表面上的剥离片和保护膜形成层。保护膜形成层包括热固性和/或能量射线可固化组分和粘合剂聚合物组分。

6. 发明申请

US20050189620A1 Manufacturing method for semiconductor device, and system to which semiconductor is applied 审中-公开
标题翻译：半导体装置的制造方法以及应用了半导体的系统
公开(公告)号：US20050189620A1
公开(公告)日：2005-09-01
申请号：US10789795
申请日：2004-02-25
申请人： Takashi Sugino , Masaki Kusuhara , Masaru Umeda
发明人： Takashi Sugino , Masaki Kusuhara , Masaru Umeda
IPC分类号： H01L21/28 , H01L21/283 , H01L21/314 , H01L21/331 , H01L21/335 , H01L21/768 , H01L23/522 , H01L29/12 , H01L29/20
CPC分类号： H01L21/02175 , H01L21/02274 , H01L21/314 , H01L29/2003 , H01L29/66318 , H01L29/66462
摘要： A high performance semiconductor device that can realize surface protection and surface inactivation and is fabricated using a film formation method and technique that enable improvement of high frequency characteristics, and an electronic device for a communication system including the semiconductor device, are provided. The semiconductor device is characterized in that a film having boron, carbon, and nitrogen as main components and to which sulfur is added serves as a surface protection film, and at least part of a surface is covered.
摘要翻译：提供一种能够实现表面保护和表面失活的高性能半导体器件，并且使用能够提高高频特性的成膜方法和技术以及包括该半导体器件的通信系统的电子设备来制造。半导体器件的特征在于，以硼，碳和氮为主要成分并加入硫的膜用作表面保护膜，并且覆盖表面的至少一部分。

7. 发明申请

US20050037542A1 Process for producing a semiconductor device 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US20050037542A1
公开(公告)日：2005-02-17
申请号：US10916177
申请日：2004-08-11
申请人： Akinori Sato , Osamu Yamazaki , Hideo Senoo , Takashi Sugino
发明人： Akinori Sato , Osamu Yamazaki , Hideo Senoo , Takashi Sugino
IPC分类号： H01L23/12 , H01L21/44 , H01L21/56 , H01L21/60
CPC分类号： H01L24/83 , H01L21/561 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/90 , H01L2221/68327 , H01L2221/6834 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/83191 , H01L2224/838 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/0781 , H01L2924/07811 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/29099
摘要： A process for producing a resin-sealed semiconductor device having high reliability which is produced more easily and efficiently without voids, the process comprising the steps of: (a) providing a semiconductor wafer having circuits on a surface; (b) applying a resin sheet composed of a support and an adhesive resin layer releasable from the support, on the circuit surface of the semiconductor wafer, and fixing an outer periphery of the resin sheet with a ring frame; (c) cutting the semiconductor wafer and the resin layer by each circuit to form chips; (d) picking up each chip together with the resin layer from the support; (e) mounting each chip on a predetermined position of a chip mounting substrate through the resin layer; and firmly bonding the chip on the chip mounting substrate so as to achieve conduction between the chip and the chip mounting substrate.
摘要翻译：一种制造具有高可靠性的树脂密封半导体器件的方法，该半导体器件更容易且高效地生产而没有空隙，该方法包括以下步骤：（a）提供在表面上具有电路的半导体晶片; （b）在半导体晶片的电路表面上涂敷由支撑体构成的树脂片和可从支持体剥离的粘合树脂层，并用环形框固定树脂片的外周; （c）通过每个电路切割半导体晶片和树脂层以形成芯片; （d）从树脂层与支撑体一起拾取每个芯片; （e）通过树脂层将每个芯片安装在芯片安装基板的预定位置上; 并将芯片牢固地接合在芯片安装基板上，以实现芯片和芯片安装基板之间的导通。

8. 发明授权

US06558975B2 Process for producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06558975B2
公开(公告)日：2003-05-06
申请号：US09943488
申请日：2001-08-30
申请人： Takashi Sugino , Hideo Senoo , Kazuhiro Takahashi
发明人： Takashi Sugino , Hideo Senoo , Kazuhiro Takahashi
IPC分类号： H01L2100
CPC分类号： H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/83855 , H01L2924/01004 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/00 , H01L2924/3512
摘要： A process for producing a semiconductor device comprising the steps of providing a wafer having a surface furnished with semiconductor circuits and a back; forming grooves of a depth smaller than the thickness of the wafer, said grooves extending from the wafer circuit surface; sticking a surface protective sheet onto the wafer circuit surface; grinding the back of the wafer so that the thickness of the wafer is reduced, resulting in division of the wafer into individual chips with spaces therebetween; sticking a pressure sensitive adhesive sheet onto the ground back of the wafer, pressure sensitive adhesive sheet comprising a base and, superimposed thereon, an energy radiation curable pressure sensitive adhesive layer; exposing the energy radiation curable pressure sensitive adhesive layer to an energy radiation; and peeling the surface protective sheet from the wafer circuit surface.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：提供具有配备有半导体电路和背面的表面的晶片; 形成深度小于晶片厚度的凹槽，所述凹槽从晶片电路表面延伸; 将表面保护片粘贴在晶片电路表面上; 研磨晶片的背面，使得晶片的厚度减小，导致晶片分离成具有空间的各个芯片; 将压敏粘合片粘贴到晶片的背面，压敏粘合片包括基底并叠加在能量辐射固化压敏粘合剂层上; 将能量辐射固化压敏粘合剂层暴露于能量辐射; 并将表面保护片从晶片电路表面剥离。

9. 发明授权

US5060059A Color image processing apparatus for converting color-sequential image data into color-parallel image data 失效
标题翻译：彩色图像处理装置，用于将色顺序图像数据转换为彩色并行图像数据
公开(公告)号：US5060059A
公开(公告)日：1991-10-22
申请号：US372172
申请日：1989-06-27
申请人： Tetsuzo Mori , Takashi Sugino , Makoto Takaoka , Susumu Sugiura , Hiroyuki Ichikawa
发明人： Tetsuzo Mori , Takashi Sugino , Makoto Takaoka , Susumu Sugiura , Hiroyuki Ichikawa
IPC分类号： H04N1/60 , H04N1/64
CPC分类号： H04N1/648 , H04N1/6025
摘要： A color image processing apparatus includes line sensors and an A/D converter for entering color-sequential image data in which plural color component signals are sequentially arranged, a first converter for converting the color-sequential image data into parallel image data, a color image processor for effecting color image processing on the parallel image data obtained from the first converter, a second converter for converting the parallel image data into color-sequential image data, and a device for supplying the color-sequential image data converted by the second converter to the color-sequential image data processor at a next stage in the processing of the color component signals.
摘要翻译：一种彩色图像处理装置，包括行传感器和A / D转换器，用于输入顺序排列多个颜色分量信号的色顺序图像数据;第一转换器，用于将色顺图像数据转换为并行图像数据;彩色图像处理器，用于对从第一转换器获得的并行图像数据进行彩色图像处理，第二转换器，用于将并行图像数据转换为彩色顺序图像数据，以及用于将由第二转换器转换的彩色顺序图像数据提供给在颜色分量信号的处理中的下一阶段的色彩顺序图像数据处理器。

10. 发明授权

US4897736A Color image processing apparatus using a deformed dot matrix 失效
标题翻译：使用变形点阵的彩色图像处理装置
公开(公告)号：US4897736A
公开(公告)日：1990-01-30
申请号：US355836
申请日：1989-05-22
申请人： Takashi Sugino
发明人： Takashi Sugino
IPC分类号： G03F5/00 , H04N1/405 , H04N1/46 , H04N1/52
CPC分类号： H04N1/4058 , H04N1/52
摘要： A color image processing apparatus avoids uneven recording of date used to form the reproduced color image, which using a reduced memory capacity, by suitable deformation of square dot submatrices within a square dot matrix used in halftone dot reproduction, to provide desired screen angles, and by reproducing different density levels with different arrangements of dots within the same dot pattern.
摘要翻译：彩色图像处理装置通过在半色调网点再现中使用的方形点阵中的方形点子矩阵的适当变形来避免用于形成再现的彩色图像的日期的不均匀记录，其使用减小的存储容量，以提供期望的屏幕角度，以及通过在相同的点图案中再现具有不同排列的点的不同密度水平。

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