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    • 1. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US07679144B2
    • 2010-03-16
    • US11938441
    • 2007-11-12
    • Hiroshi KudoKenji Ishikawa
    • Hiroshi KudoKenji Ishikawa
    • H01L27/088H01L21/00H01L21/84
    • H01L27/1104H01L23/485H01L27/0207H01L27/11H01L2924/0002H01L2924/00
    • The semiconductor device includes a silicon substrate, a device isolation insulating film dividing an active region of the silicon substrate into plural pieces, a gate electrode formed on the active region, a source/drain region which is formed in the active region on both sides of the gate electrode, and which constitutes a MOS transistor of an SRAM memory cell with the gate electrode, an interlayer insulating film formed over each of the active region and the device isolation insulating film, a first hole which is formed in the interlayer isolation insulating film, and which commonly overlaps with two adjacent active regions and the device isolation insulating film between the active regions, and a first conductive plug which is formed in the first hole, and which electrically connects the two active regions.
    • 半导体器件包括硅衬底,将硅衬底的有源区分成多个部件的器件隔离绝缘膜,形成在有源区上的栅电极,形成在有源区的两侧的有源区中的源/漏区 并且构成具有栅电极的SRAM存储单元的MOS晶体管,形成在有源区和器件隔离绝缘膜之上的层间绝缘膜,形成在层间隔离绝缘膜中的第一孔 并且其通常与有源区域之间的两个相邻的有源区和器件隔离绝缘膜重叠,并且形成在第一孔中并且电连接两个有源区的第一导电插塞。