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1. 发明授权

US08314437B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08314437B2
公开(公告)日：2012-11-20
申请号：US12874425
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

2. 发明申请

US20120056154A1 METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US20120056154A1
公开(公告)日：2012-03-08
申请号：US13037687
申请日：2011-03-01
申请人： Kotaro ZAIMA , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro ZAIMA , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22
摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.
摘要翻译：通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上从第一金属层的与第一金属层的第一金属层相反的表面侧形成凹槽并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

3. 发明授权

US08822250B2 Semiconductor light emitting device and method for manufacturing the same 有权
公开(公告)号：US08822250B2
公开(公告)日：2014-09-02
申请号：US13665650
申请日：2012-10-31
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

4. 发明授权

US08470625B2 Method of fabricating semiconductor light emitting device and semiconductor light emitting device 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US08470625B2
公开(公告)日：2013-06-25
申请号：US13037687
申请日：2011-03-01
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/18 , H01L33/06 , H01L21/268 , H01L21/428
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22
摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.
摘要翻译：通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上形成从第一基板上的第一金属层相反的表面侧的凹槽并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

5. 发明授权

US08178891B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08178891B2
公开(公告)日：2012-05-15
申请号：US12874475
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/04 , H01L33/06
摘要： Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.
摘要翻译：某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域，氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

6. 发明申请

US20110215292A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110215292A1
公开(公告)日：2011-09-08
申请号：US12874425
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/04 , H01L21/18
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

7. 发明申请

US20130153922A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20130153922A1
公开(公告)日：2013-06-20
申请号：US13689841
申请日：2012-11-30
申请人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
发明人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
IPC分类号： H01L33/32
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate and a light extraction surface. The first electrode layer is provided on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, first conductive type semiconductor layer, and second conductive type semiconductor layer, and has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
摘要翻译：半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。发光元件在基板上具有基于氮化物的III-V化合物半导体和光提取表面。第一电极层设置在光提取面上。第二电极层设置在与光提取面相反的表面上。种子电极层构造成覆盖第二电极层的整个表面。电镀层设置在种子电极层上。发光元件具有发光层，第一导电型半导体层和第二导电型半导体层，并且具有逐渐变窄的第二导电型半导体层，发光层和第一导电型半导体层。

8. 发明申请

US20130059408A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130059408A1
公开(公告)日：2013-03-07
申请号：US13665650
申请日：2012-10-31
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

9. 发明授权

US08390007B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08390007B2
公开(公告)日：2013-03-05
申请号：US12874399
申请日：2010-09-02
申请人： Toru Gotoda , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
发明人： Toru Gotoda , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/20 , H01L2933/0091
摘要： A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.
摘要翻译：半导体发光器件具有发光元件，以及第一和第二电极。发光元件在基板上具有基于氮化物的III-V族化合物半导体。第一和第二电极分别设置在发光元件的两侧。发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。第一导电型半导体层设置在发光层和第一电极之间。第二导电型半导体层设置在发光层和第二电极之间。第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

10. 发明授权

US08334153B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08334153B2
公开(公告)日：2012-12-18
申请号：US12874625
申请日：2010-09-02
申请人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
发明人： Toru Gotoda , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
摘要翻译：半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。发光元件在基板上具有基于氮化物的III-V族化合物半导体。发光元件具有光提取面。光提取面上的第一电极层。第二电极层设置在与发光元件的光提取面相反的表面上。种子电极层构造成覆盖第二电极层的整个表面。电镀层设置在种子电极层上。发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。发光元件具有按照第二导电类型半导体层，发光层和第一导电类型半导体层的顺序逐渐变窄的宽度的正锥形形状。

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