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1. 发明申请

US20100305294A1 POLYURETHANE RESIN COMPOSITION FOR REACTION INJECTION MOLDING AND MOLDED ARTICLE 审中-公开
标题翻译：聚氨酯树脂组合物用于反应注塑成型和成型品
公开(公告)号：US20100305294A1
公开(公告)日：2010-12-02
申请号：US12744976
申请日：2008-10-31
申请人： Hiroshi Kanayama , Yoshio Yoshida , Hiroyuki Utsumi , Satoshi Yamasaki
发明人： Hiroshi Kanayama , Yoshio Yoshida , Hiroyuki Utsumi , Satoshi Yamasaki
IPC分类号： C08G18/72
CPC分类号： C08G18/792 , C08G18/725 , C08G2120/00
摘要： Disclosed is a polyurethane resin composition for reaction injection molding, which contains an isocyanate component containing at least one of an alicyclic polyisocyanate and an aralkyl polyisocyanate and a trimer of hexamethylene diisocyanate, and a polyol component.
摘要翻译：公开了一种用于反应注射成型的聚氨酯树脂组合物，其包含含有脂环族多异氰酸酯和芳烷基多异氰酸酯和六亚甲基二异氰酸酯的三聚体中的至少一种的异氰酸酯组分和多元醇组分。

2. 发明授权

US08876973B2 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same 有权
标题翻译：掺杂有磷原子的n型（100）取向的单晶金刚石半导体的膜及其制造方法
公开(公告)号：US08876973B2
公开(公告)日：2014-11-04
申请号：US13344104
申请日：2012-01-05
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , B01J3/06 , B32B9/00 , C30B29/04 , C30B25/10 , C30B29/40 , C30B25/02 , C30B25/20 , H01L21/02 , C30B25/18
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

3. 发明申请

US20110213089A1 MOLDED TRANSPARENT RESIN AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：模塑透明树脂及其生产方法
公开(公告)号：US20110213089A1
公开(公告)日：2011-09-01
申请号：US13126984
申请日：2010-08-02
申请人： Satoshi Yamasaki , Hiroshi Hayami , Makoto Nakabayashi
发明人： Satoshi Yamasaki , Hiroshi Hayami , Makoto Nakabayashi
IPC分类号： C08F214/28 , B29C35/10 , C08F8/00
CPC分类号： G02B1/04 , C08K5/103 , C08L27/18 , C08L27/20 , C08L27/12 , C08F210/02 , C08F214/26 , C08F214/28
摘要： The present invention provides a clear resin molded body which has high heat resistance that can be used in the reflow soldering process using Pb-free solder, which has high transparency that can be used for an optical member, and which can be easily produced, and also provides a method of producing the same.A clear resin molded body includes a molded body of a resin composition composed of a carbon-hydrogen-bond-containing fluororesin, in which the resin composition is crosslinked by irradiating the molded body with ionizing radiation at least once in an atmosphere at a temperature lower than the melting point of the fluororesin and at least once in an atmosphere at a temperature equal to or higher than the melting point of the fluororesin. A method produces the clear resin molded body.
摘要翻译：本发明提供一种透明的树脂成型体，该树脂成型体具有高的耐热性，可用于使用可用于光学部件的高透明度并且易于生产的无铅焊料的回流焊接工艺，以及也提供了制造该方法。透明树脂成型体包括由含碳氢键的氟树脂构成的树脂组合物的成型体，其中树脂组合物通过在较低温度的气氛中用电离辐射照射成型体至少一次而交联比氟树脂的熔点高，并且在等于或高于氟树脂的熔点的温度的气氛中至少一次。一种方法产生透明树脂成型体。

4. 发明申请

US20110017991A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110017991A1
公开(公告)日：2011-01-27
申请号：US12934199
申请日：2009-02-27
申请人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
发明人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/12 , H01L29/06 , H01L29/22 , H01L29/16 , H01L29/24 , H01L29/20
CPC分类号： H01L29/861 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/872
摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
摘要翻译：在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝氮化物（AlN）或氮化硼（BN）。本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料，只要在如此低的温度下进行操作即可使热激发能足够小。

5. 发明申请

US20100227985A1 GRANULAR POLYURETHANE RESIN COMPOSITION AND MOLDED ARTICLE OF THE SAME 审中-公开
标题翻译：颗粒状聚氨酯树脂组合物及其成型品
公开(公告)号：US20100227985A1
公开(公告)日：2010-09-09
申请号：US12682858
申请日：2008-10-14
申请人： Daisuke Nishiguchi , Kei Ootsuki , Satoshi Yamasaki
发明人： Daisuke Nishiguchi , Kei Ootsuki , Satoshi Yamasaki
IPC分类号： C08G18/00
CPC分类号： C08G18/753 , B29C41/18 , B29K2075/00 , B60R13/02 , C08G18/10 , C08G18/71 , C08G18/722 , C08G18/757 , C08G18/758 , C08G2140/00 , C08G18/2825 , C08G18/3206
摘要： Disclosed is a granular polyurethane resin composition containing a thermoplastic polyurethane resin which contains a hard segment obtained by a reaction between a polyisocyanate and a chain extender. The polyisocyanate contains isocyanate groups of 1,4-bis(isocyanatomethyl)cyclohexane in an amount of not less than 50% by more relative to the total mole number of isocyanate groups.
摘要翻译：公开了一种含有热塑性聚氨酯树脂的颗粒状聚氨酯树脂组合物，其含有通过多异氰酸酯和扩链剂之间的反应获得的硬链段。多异氰酸酯含有相对于异氰酸酯基总摩尔数不少于50％的量的1,4-双（异氰酸甲酯基）环己烷的异氰酸酯基团。

6. 发明授权

US07775408B2 Head cap for aerosol type atomizer 有权
标题翻译：喷雾式雾化器头盖
公开(公告)号：US07775408B2
公开(公告)日：2010-08-17
申请号：US11795905
申请日：2006-01-18
申请人： Kazunori Yamamoto , Shin Kanematsu , Satoshi Yamasaki
发明人： Kazunori Yamamoto , Shin Kanematsu , Satoshi Yamasaki
IPC分类号： B65D83/00
CPC分类号： B65D83/24 , B65D83/205 , B65D83/303
摘要： A head cap for an aerosol type atomizer is proposed in which a residual gas that remains in the container after the use of the aerosol type atomizer is ended are discharged easily and safely, and which is so structured that the aerosol type atomizer cannot be falsely operated while it is being used. It comprises a cap body mounted over a top of a container accommodating its contents, and a movable member for spray operation disposed inside of the cap body and having a fluid channel extending from a stem fitting part for fitting with a stem and leading to a spray port, the movable member for spray operation having a push button such that pushing down the push button to take a spray position sprays contents of the container from the spray port via the fluid channel, wherein the cap body has a side face elastically deformable so that when the push button of the movable member for spray operation is pushed down to take the spray position, pressing the side face of the cap body inwards locks the movable member for spray operation with the side face to hold the movable member for spray operation at the spray position.
摘要翻译：提出了一种用于气溶胶型雾化器的头盖，其中在使用气溶胶型雾化器之后残留在容器中的残余气体被容易且安全地排出，并且其结构使得气溶胶型雾化器不能被错误地操作而正在被使用。它包括安装在容纳其内容物的容器的顶部上的盖体，以及设置在盖体内部的用于喷射操作的可动构件，并且具有从杆配件部分延伸的流体通道，用于与杆配合并导致喷雾用于喷雾操作的可移动部件具有按钮，使得按下按钮以取得喷射位置，经由流体通道从喷雾口喷射容器的内容物，其中盖体具有可弹性变形的侧面，使得当用于喷射操作的可移动部件的按钮被按下以进行喷射位置时，将盖体的侧面向内侧按压侧面的可动部件进行喷雾操作，以将可动部件保持在喷雾操作状态喷雾位置。

7. 发明申请

US20100132246A1 FAN TYPE NOXIOUS INSECT CONTROL APPARATUS 有权
标题翻译：风扇型异味控制装置
公开(公告)号：US20100132246A1
公开(公告)日：2010-06-03
申请号：US12595102
申请日：2008-03-31
申请人： Shigeru Ohtsuka , Kazunori Yamamoto , Shinya Kawamura , Satoshi Yamasaki
发明人： Shigeru Ohtsuka , Kazunori Yamamoto , Shinya Kawamura , Satoshi Yamasaki
IPC分类号： A01M1/20
CPC分类号： A01M1/2033
摘要： A fan type noxious insect control apparatus is disclosed which is desirably used carried on a user's body part and excels in noxious insect control performance. To this end, the apparatus is so configured that air is drawn through an inlet port (6) by driving of an axial flow fan (3) and passed through a chemical carrier (2) carrying a noxious insect control active ingredient to form the air containing such active ingredient, the air being run out through an outlet port (7) to diffuse the active ingredient into the ambient atmosphere and further that the inlet port (6) at an upstream of the fan (3) is open facing axially thereof, the outlet port (7) at a downstream of the fan (3) is open facing radially thereof, and there are provided an annular wall (8) surrounding the fan (3) and an air flow passage (9) communicating between a delivery section of the fan (3) and the outlet port (7) to convert air flowing out of the axial flow fan (3) axially thereof to air flowing radially thereof.
摘要翻译：公开了一种风扇式有害昆虫控制装置，其被期望地用于携带在使用者的身体部位上，并且具有有害的昆虫控制性能。为此，该装置被构造为通过驱动轴流风扇（3）将空气从入口（6）中抽出并通过携带有害昆虫控制活性成分的化学载体（2）以形成空气含有这种活性成分的空气通过出口（7）流出，以将活性成分扩散到环境气氛中，此外，风扇（3）的上游侧的入口（6）面向轴向敞开，在风扇（3）的下游侧的出口（7）面向其径向开放，并且设置有环绕风扇（3）的环形壁（8）和在输送段的风扇（3）和出口（7），以将从轴流风扇（3）流出的空气轴向转换成其径向流动的空气。

8. 发明申请

US20090029929A1 Decoy Nucleic Acid to Synoviolin Gene Promoter 审中-公开
标题翻译：诱饵核酸对滑膜蛋白基因启动子
公开(公告)号：US20090029929A1
公开(公告)日：2009-01-29
申请号：US10594146
申请日：2005-03-28
申请人： Toshihiro Nakajima , Kaneyuki Tsuchimochi , Naoko Yagishita , Satoshi Yamasaki , Yukihiro Kato , Tetsuya Amano , Kaori Tamitsu
发明人： Toshihiro Nakajima , Kaneyuki Tsuchimochi , Naoko Yagishita , Satoshi Yamasaki , Yukihiro Kato , Tetsuya Amano , Kaori Tamitsu
IPC分类号： A61K31/711 , A61K48/00 , A61P19/02 , A61P21/00 , A61P25/00 , A61P25/16 , A61P25/28 , A61P29/00 , A61P35/00 , C12N15/12 , C12N5/10
CPC分类号： C12N15/113 , A61K31/7088 , A61K48/00 , C12N2310/13
摘要： The present invention provides a decoy nucleic acid for the Synoviolin gene promoter. Also provided is the decoy nucleic acid can inhibit the promoter activity by binding to the transcription factor of the Synoviolin gene promoter. It also provides a decoy nucleic acid as expressed in (a) a decoy nucleic acid consisting of a nucleotide sequence as shown in SEQ ID NO: 11 or 12; and it also provides (b) a decoy nucleic acid consisting of a nucleotide sequence as shown in SEQ ID NO: 11 or 12 having deletion, substitution or addition of one or several nucleotides and has the function of inhibiting Synoviolin gene promoter activity.
摘要翻译：本发明提供了用于滑膜炎基因启动子的诱饵核酸。还提供了诱饵核酸可以通过与滑膜素基因启动子的转录因子结合来抑制启动子活性。它还提供如（a）由如SEQ ID NO：11或12所示的核苷酸序列组成的诱饵核酸所表达的诱饵核酸; 并且还提供（b）由SEQ ID NO：11或12所示的具有缺失，取代或添加一个或几个核苷酸的核苷酸序列组成的具有抑制滑膜素基因启动子活性的功能的诱饵核酸。

9. 发明申请

US20080274479A1 Assay of Ubiquitinization of Synoviolin and Use Thereof in Screening 审中-公开
标题翻译：滑膜蛋白泛素化检测及其筛选用途
公开(公告)号：US20080274479A1
公开(公告)日：2008-11-06
申请号：US11628412
申请日：2005-06-02
申请人： Toshihiro Nakajima , Sayumi Toriyama , Tadayuki Yamadera , Tomohiko Ohta , Satoshi Yamasaki , Naoko Yagishita , Lei Zhang , Rie Ikeda , Takeshi Sasaki , Tetsuya Amano
发明人： Toshihiro Nakajima , Sayumi Toriyama , Tadayuki Yamadera , Tomohiko Ohta , Satoshi Yamasaki , Naoko Yagishita , Lei Zhang , Rie Ikeda , Takeshi Sasaki , Tetsuya Amano
IPC分类号： G01N33/53
CPC分类号： C12Q1/25 , G01N2333/9015 , G01N2500/02
摘要： The present invention relates to an assay method for determining a auto-ubiquitination activity of synoviolin, comprising reacting synoviolin and ubiquitin in a reaction system containing them and determining an amount of ubiquitin binding to synoviolin, to a method of screening a substance capable of regulating such an activity, and to a kit for auto-ubiquitination assay of synoviolin.
摘要翻译：本发明涉及一种用于测定滑膜蛋白的自身泛素化活性的测定方法，包括使滑膜蛋白和泛素在含有它们的反应体系中反应并确定与滑膜蛋白结合的泛素的量，以筛选能够调节这种蛋白质的物质的方法一种活性，以及用于滑膜蛋白自动泛素化测定的试剂盒。

10. 发明申请

US20080193366A1 Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same 审中-公开
标题翻译：掺有磷原子的N型（100）取向的单晶金刚石半导体膜及其制造方法
公开(公告)号：US20080193366A1
公开(公告)日：2008-08-14
申请号：US11883488
申请日：2006-01-26
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C01B31/06 , C30B23/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基板（100）取向金刚石，用于化学气相沉积的装置在等离子体气相中提供氢，烃和磷化合物，等离子体气相中磷原子与碳原子的比例不小于0.1％，和碳原子数与氢原子的比率为0.05％以上，制造方法为。

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