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1. 发明授权

US5411601A Substrate for solar cell and solar cell employing the substrate 失效
标题翻译：太阳能电池基板和采用基板的太阳能电池
公开(公告)号：US5411601A
公开(公告)日：1995-05-02
申请号：US146306
申请日：1993-11-02
申请人： Hiroshi Higuchi , Takashi Arita , Sotoyuki Kitamura , Mikio Murozono
发明人： Hiroshi Higuchi , Takashi Arita , Sotoyuki Kitamura , Mikio Murozono
IPC分类号： H01L31/04 , H01L31/0392 , H01L31/072 , H01L31/18
CPC分类号： H01L31/073 , H01L31/0392 , H01L31/03925 , H01L31/1836 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A solar cell is constructed using a heterojunction formed by layering an n-type compound semiconductor followed by a p-type compound semiconductor on an insulator layer containing titanium oxide which has been formed on one side of a glass plate. The insulator layer can improve the photoelectric conversion efficiency of the solar cell by lowering the sheet resistance of the n-type semiconductor film which is used as the window material of the solar cell. In addition, light transmittance is improved.
摘要翻译：使用在玻璃板的一侧上形成的含有氧化钛的绝缘体层上分层n型化合物半导体及p型化合物半导体而形成的异质结构成太阳能电池。通过降低作为太阳能电池的窗口材料的n型半导体膜的薄层电阻，能够提高太阳能电池的光电转换效率。此外，透光率提高。

2. 发明授权

US5994642A Method for preparing CdTe film and solar cell using the same 失效
标题翻译：使用该CdTe薄膜和太阳能电池的方法
公开(公告)号：US5994642A
公开(公告)日：1999-11-30
申请号：US89
申请日：1998-03-13
申请人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
发明人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
IPC分类号： C23C14/06 , H01L21/363 , H01L27/142 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.
摘要翻译： PCT No.PCT / JP97 / 01791 Sec。 371日期1998年3月13日 102（e）1998年3月13日PCT PCT 1997年5月27日PCT公布。公开号WO97 / 45880 PCT 日期1997年12月4日公开了通过改进的紧密间隔升华法形成质量好的CdTe膜的方法。该方法包括：在支撑体上涂敷含有CdTe半导体材料的糊状物，形成在支撑体表面含有半导体材料的涂膜的工序; 紧密配置支撑部件的步骤和要形成CdTe膜的基板，以使涂膜面对基板的表面; 以及在基板上形成CdTe膜的步骤，通过加热涂膜和基板，并使涂膜中的半导体材料蒸发。

3. 发明授权

US5920798A Method of preparing a semiconductor layer for an optical transforming device 失效
标题翻译：制备光转换装置的半导体层的方法
公开(公告)号：US5920798A
公开(公告)日：1999-07-06
申请号：US864624
申请日：1997-05-28
申请人： Hiroshi Higuchi , Akira Hanafusa , Kuniyoshi Omura , Mikio Murozono , Hideaki Oyama
发明人： Hiroshi Higuchi , Akira Hanafusa , Kuniyoshi Omura , Mikio Murozono , Hideaki Oyama
IPC分类号： C23C18/06 , H01L31/073 , H01L31/18 , C07F3/06
CPC分类号： H01L31/073 , C23C18/06 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A semiconductor layer for photoelectric transfer device for forming a p-n junction, which has large surface area and uniform film pressure, is formed in the atmosphere under normal pressure for several minutes. The semiconductor layer for forming a p-n junction is composed of a compound semiconductor of a Group II element(selected from the group consisting of Cd, Zn and Hg)-Group VI element(selected from the group consisting of S and Te). A semiconductor layer having a p or n conductive type is formed on a substrate by pyrolytically decomposing an organometallic compound containing a II-VI group atom bond. A semiconductor film is formed on the surface of a substrate by dispersing or dissolving an organometallic compound in a solvent to form a solution, applying ink on the surface of the substrate using a suitable printing method and subjecting to a heat treatment.
摘要翻译：在大气中在常压下形成用于形成p-n结的用于形成p-n结的半导体层，其具有大的表面积和均匀的膜压力，持续数分钟。用于形成p-n结的半导体层由II族元素（选自Cd，Zn和Hg）-VI族元素（选自S和Te）的化合物半导体组成。通过热分解含有II-VI族原子键的有机金属化合物，在基板上形成具有p或n导电型的半导体层。通过将有机金属化合物分散或溶解在溶剂中以形成溶液，在基材的表面上形成半导体膜，使用合适的印刷方法在基材的表面上涂布油墨并进行热处理。

4. 发明授权

US5714391A Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device 失效
标题翻译：制造用于光电或太阳能电池器件的化合物半导体薄膜的方法
公开(公告)号：US5714391A
公开(公告)日：1998-02-03
申请号：US648544
申请日：1996-05-16
申请人： Kuniyoshi Omura , Tsuyoshi Nishio , Satoshi Shibutani , Shigeo Kondoh , Mikio Murozono , Akira Hanafusa , Hideaki Oyama
发明人： Kuniyoshi Omura , Tsuyoshi Nishio , Satoshi Shibutani , Shigeo Kondoh , Mikio Murozono , Akira Hanafusa , Hideaki Oyama
IPC分类号： C23C16/30 , C23C16/448 , H01L31/0336 , H01L31/073 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/0749 , C23C16/305 , C23C16/306 , C23C16/4485 , H01L31/073 , H01L31/1828 , H01L31/1836 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： This invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group having at least one metal atom selected from the group consisting of copper, zinc, cadmium, mercury, and lead, and the functional group also containing at least one sulfur atom. Since the obtained metal sulfides are of high-purity and dense, they can be utilized in various photoelectric devices. Particularly, the photoelectric conversion efficiency of a CdS/CdTe system thin film compound semiconductor solar cell can be improved remarkably by employing a layer made of a CdS thin film as a window of the solar cell.
摘要翻译：本发明涉及由含硫金属有机化合物的热分解产生的由金属硫化物衍生的化合物半导体薄膜的制造方法，该化合物含有至少一个具有至少一个选自以下的金属原子的官能团：的铜，锌，镉，汞和铅，官能团也含有至少一个硫原子。由于所得金属硫化物具有高纯度和致密性，因此可用于各种光电器件。特别地，通过使用由CdS薄膜制成的层作为太阳能电池的窗口，能够显着提高CdS / CdTe系薄膜化合物半导体太阳能电池的光电转换效率。

5. 发明授权

US08338690B2 Method for producing photovoltaic device and photovoltaic device 有权
标题翻译：生产光伏器件和光伏器件的方法
公开(公告)号：US08338690B2
公开(公告)日：2012-12-25
申请号：US11351114
申请日：2006-02-10
申请人： Mikio Murozono , Takeshi Hibino , Noboru Mouri , Young-tae Park , Toshiyuki Nakamura , Yoshiaki Kodani
发明人： Mikio Murozono , Takeshi Hibino , Noboru Mouri , Young-tae Park , Toshiyuki Nakamura , Yoshiaki Kodani
IPC分类号： H01L25/00
CPC分类号： H01L31/035281 , H01L31/042 , H01L31/0508 , H01L31/0512 , H01L31/0547 , H01L31/18 , Y02E10/52
摘要： This invention relates to a method for producing a photovoltaic device that includes spherical photovoltaic elements and a support with a large number of recesses for receiving the elements one by one and to the photovoltaic device. Each of the spherical photovoltaic elements comprises a spherical first semiconductor and a second semiconductor layer covering the surface of the first semiconductor. A conductive adhesive is applied in advance to the bottoms of the recesses of the support serving as a second conductor layer. The elements are disposed in the bottoms of the recesses with the conductive adhesive applied thereto, to fix the elements to the support and electrically connect their second semiconductor layers to the support. An electrical insulator layer, which has through-holes serving as conductive paths, is bonded to the backside of the support, and a first conductor layer, which interconnects the electrodes of the first semiconductors of the respective elements, is formed thereon.
摘要翻译：本发明涉及一种用于制造光电器件的方法，该光电器件包括球形光电元件和具有大量凹槽的支撑件，用于逐个接收元件和光伏器件。每个球形光电元件包括球形第一半导体和覆盖第一半导体表面的第二半导体层。预先将导电粘合剂施加到用作第二导体层的支撑件的凹部的底部。这些元件设置在凹部的底部，其中施加有导电粘合剂，以将元件固定到支撑件并将其第二半导体层电连接到支撑件。具有用作导电路径的通孔的电绝缘体层被结合到支撑体的背面，并且在其上形成互连各元件的第一半导体的电极的第一导体层。

6. 发明授权

US06211043B1 Method of manufacturing a compound semiconductor thin film on a substrate 失效
标题翻译：在基板上制造化合物半导体薄膜的方法
公开(公告)号：US06211043B1
公开(公告)日：2001-04-03
申请号：US09261518
申请日：1999-03-03
申请人： Tsuyoshi Nishio , Kuniyoshi Omura , Takeshi Hibino , Satoshi Shibutani , Mikio Murozono
发明人： Tsuyoshi Nishio , Kuniyoshi Omura , Takeshi Hibino , Satoshi Shibutani , Mikio Murozono
IPC分类号： H01L2120
CPC分类号： H01L31/073 , C23C16/18 , C23C16/306 , H01L31/1828 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： The present invention relates to a method of manufacturing a compound semiconductor thin film by the thermal decomposition of a metal organic compound and a solar cell using the above thin film. An organic solvent solution of the metal organic compound containing at least one metal-sulfur bond is pulverized into fine particles by an ultrasonic vibration method or by a spray injection method and the obtained fine particles or gaseous metal organic compound are thermally decomposed by contacting them on the heated surface of a thin film forming substrate and thus a compound semiconductor metal sulfide thin film is formed on the thin film forming substrate. With this method, a compound semiconductor thin film of large surface area with uniform quality can be manufactured at low manufacturing cost with good reproducibility. These metal sulfide thin films are of high purity, high density and high quality and thus can be used for various photo-electronic devices.
摘要翻译：本发明涉及通过使用上述薄膜的金属有机化合物和太阳能电池的热分解来制造化合物半导体薄膜的方法。将含有至少一种金属 - 硫键的金属有机化合物的有机溶剂溶液通过超声波振动法或喷射法粉碎成微粒，所得到的微粒或气态金属有机化合物通过使其接触而热分解在薄膜形成基板上形成薄膜形成基板的加热表面，从而形成化合物半导体金属硫化物薄膜。通过这种方法，可以以低制造成本制造具有均匀质量的大表面积的化合物半导体薄膜，具有良好的再现性。这些金属硫化物薄膜具有高纯度，高密度和高质量，因此可用于各种光电子器件。

7. 发明授权

US4940604A Method for production of copper indium diselenide 失效
标题翻译：二硒化铜铟的生产方法
公开(公告)号：US4940604A
公开(公告)日：1990-07-10
申请号：US239742
申请日：1988-09-02
申请人： Naoki Suyama , Noriyuki Ueno , Kuniyoshi Omura , Hazime Takada , Yuutaro Kita , Mikio Murozono
发明人： Naoki Suyama , Noriyuki Ueno , Kuniyoshi Omura , Hazime Takada , Yuutaro Kita , Mikio Murozono
IPC分类号： H01L31/0264 , H01L31/032 , H01L31/0336 , H01L31/04
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A polycrystalline CuInSe.sub.2 film is produced by adding a liquid cooling medium to a mixture of Cu, In and Se powders, grinding the resulting composition by means of a ball-mill to provide a slurry containing CuInSe.sub.2 of low crystallinity, drying and adding a binding agent to the slurry to form a paste, coating a substrate with the paste, and sintering the paste so applied under a nitrogen atmosphere.The starting materials that can be used are not limited to respective powders of the above-mentioned elements but may be Cu-Se and In-Se compounds and the method provides CuInSe.sub.2 of excellent quality on a mass production scale at low cost.
摘要翻译：通过向Cu，In和Se粉末的混合物中加入液体冷却介质制备多晶CuInSe 2膜，通过球磨机研磨所得组合物，得到含有低结晶度的CuInSe 2的浆料，干燥并加入粘结剂与浆料形成糊状物，用糊料涂布基材，并在氮气氛下烧结糊剂。可以使用的起始材料不限于上述元素的各自的粉末，而是可以是Cu-Se和In-Se化合物，并且该方法以低成本大规模生产出优质的CuInSe2。

8. 发明申请

US20060185716A1 Method for producing photovoltaic device and photovoltaic device 有权
标题翻译：生产光伏器件和光伏器件的方法
公开(公告)号：US20060185716A1
公开(公告)日：2006-08-24
申请号：US11351114
申请日：2006-02-10
申请人： Mikio Murozono , Takeshi Hibino , Noboru Mouri , Young-tae Park , Toshiyuki Nakamura , Yoshiaki Kodani
发明人： Mikio Murozono , Takeshi Hibino , Noboru Mouri , Young-tae Park , Toshiyuki Nakamura , Yoshiaki Kodani
IPC分类号： H01L31/042
CPC分类号： H01L31/035281 , H01L31/042 , H01L31/0508 , H01L31/0512 , H01L31/0547 , H01L31/18 , Y02E10/52
摘要： This invention relates to a method for producing a photovoltaic device that includes spherical photovoltaic elements and a support with a large number of recesses for receiving the elements one by one and to the photovoltaic device. Each of the spherical photovoltaic elements comprises a spherical first semiconductor and a second semiconductor layer covering the surface of the first semiconductor. A conductive adhesive is applied in advance to the bottoms of the recesses of the support serving as a second conductor layer. The elements are disposed in the bottoms of the recesses with the conductive adhesive applied thereto, to fix the elements to the support and electrically connect their second semiconductor layers to the support. An electrical insulator layer, which has through-holes serving as conductive paths, is bonded to the backside of the support, and a first conductor layer, which interconnects the electrodes of the first semiconductors of the respective elements, is formed thereon.
摘要翻译：本发明涉及一种用于制造光电器件的方法，该光电器件包括球形光电元件和具有大量凹槽的支撑件，用于逐个接收元件和光伏器件。每个球形光电元件包括球形第一半导体和覆盖第一半导体表面的第二半导体层。预先将导电粘合剂施加到用作第二导体层的支撑件的凹部的底部。这些元件设置在凹部的底部，其中施加有导电粘合剂，以将元件固定到支撑件并将其第二半导体层电连接到支撑件。具有用作导电路径的通孔的电绝缘体层被结合到支撑体的背面，并且在其上形成互连各元件的第一半导体的电极的第一导体层。

9. 发明申请

US20060162763A1 Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles 审中-公开
公开(公告)号：US20060162763A1
公开(公告)日：2006-07-27
申请号：US10606900
申请日：2003-06-27
申请人： Yoshihiro Hamakawa , Mikio Murozono , Hideyuki Takakura , Yukio Yamaguchi , Jun Yamagata , Hidenori Yasuda
发明人： Yoshihiro Hamakawa , Mikio Murozono , Hideyuki Takakura , Yukio Yamaguchi , Jun Yamagata , Hidenori Yasuda
IPC分类号： H01L31/042
CPC分类号： H01L31/042 , C30B11/003 , C30B11/006 , C30B29/06 , C30B29/607 , C30B29/66 , C30B30/06 , H01L31/02008 , H01L31/035281 , H01L31/0512 , H01L31/0547 , H01L31/0745 , H01L31/1804 , H02S40/36 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

10. 发明授权

US06706959B2 Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles 有权
标题翻译：用于批量生产球形半导体颗粒的光伏装置和批量生产装置
公开(公告)号：US06706959B2
公开(公告)日：2004-03-16
申请号：US09988998
申请日：2001-11-21
申请人： Yoshihiro Hamakawa , Mikio Murozono , Hideyuki Takakura
发明人： Yoshihiro Hamakawa , Mikio Murozono , Hideyuki Takakura
IPC分类号： H01L310352
CPC分类号： H01L31/042 , C30B11/003 , C30B11/006 , C30B29/06 , C30B29/607 , C30B30/06 , H01L31/02008 , H01L31/035281 , H01L31/0512 , H01L31/0547 , H01L31/0745 , H01L31/1804 , H02S40/36 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.
摘要翻译：光电转换元件设置在支撑体的多个凹部中的每一个中。由凹部的内表面反射的光在光电转换元件上发光。光电转换元件具有大致球形并具有以下结构。中心侧n型非晶硅（a-Si）层的外表面被具有比a-Si更宽的光学带隙的p型非晶SiC（a-SiC）层覆盖，由此pn结形成了。支撑体的第一导体在凹部的底部或其附近与光电转换元件的p型a-SiC层连接。通过绝缘体与第一导体绝缘的第二导体与该光电转换元件的n型a-Si层连接。

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