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    • 1. 发明授权
    • Process for preparing carboxyalkyl-substituted hydroxylamine
    • 羧基烷基取代羟胺的制备方法
    • US5110985A
    • 1992-05-05
    • US612022
    • 1990-11-09
    • Hiroshi HayakawaKiyoshi Morimoto
    • Hiroshi HayakawaKiyoshi Morimoto
    • G03C5/26C07C239/10C07C239/18C07C309/14C07F9/38
    • C07F9/3808C07C239/18
    • A process for preparing a carboxyalkyl-substituted hydroxylamine represented by formula (I) ##STR1## where L represents an alkylene group; A represents a hydrogen atom, a sulfo group, a carboxy group, a phosphono group, a trialkylammonio group, a hydroxy group, an amino group, an acyl group, a carbamoyl group, a sulfamoyl group, an alkoxycarbonyl group, or a cyano group; and R.sub.1, R.sub.2, and R.sub.3, which may be the same or different, each represent a hydrogen atom, an alkyl group, or an aryl group; which comprises: reacting an .alpha.,.beta.-unsaturated carboxylic acid represented by formula (II) as an alkylating agent ##STR2## where R'.sub.1, R'.sub.2, and R'.sub.3, which may be the same or different, each represent the same group as defined for R.sub.1, R.sub.2, and R.sub.3, with a hydroxylamine of the formula HO--NH--R", where R" represents a hydrogen atom or an alkyl group which may be substituted with a sulfo group, a carboxy group, a phosphono group, a trialkylammonio group, a hydroxy group, an amino group, an acyl group, a carbamoyl group, a sulfamoyl group, an alkoxycarbonyl group, or a cyano group, in the presence of a solvent comprising: (a): (i) an organic polar solvent alone or (ii) a solvent mixture of water and an organic polar solvent when A is a sulfo group, a carboxy group, a phosphono group, or a trialkylammonio group; or (b): (i) water alone, (ii) an organic polar solvent alone, or (iii) a solvent mixture of water with an organic polar solvent when A is a hydrogen atom, a hydroxy group, an amino group, an acyl carbamoyl group, a sulfamoyl group, an alkoxy group, or a cyano group.
    • 由式(I)表示的羧基烷基取代的羟胺的制备方法其中L表示亚烷基; A表示氢原子,磺基,羧基,膦酰基,三烷基氨基,羟基,氨基,酰基,氨基甲酰基,氨磺酰基,烷氧基羰基或氰基 ; 可以相同或不同的R 1,R 2和R 3各自表示氢原子,烷基或芳基; 其包括:使由式(II)表示的α,β-不饱和羧酸作为烷基化剂(II)反应,其中R 1,R 2和R 3可以相同或不同, 各自表示与R1,R2和R3所定义的相同的基团,其具有式HO-NH-R“的羟胺,其中R”表示氢原子或可被磺基取代的烷基, 羧基,膦酰基,三烷基氨基,羟基,氨基,酰基,氨基甲酰基,氨磺酰基,烷氧基羰基或氰基,在溶剂的存在下,包括:( a):(A)当A是磺基,羧基,膦酰基或三烷基铵基时,单独的有机极性溶剂或(ii)水和有机极性溶剂的溶剂混合物; 或(b):(i)单独的水,(ii)单独的有机极性溶剂,或(iii)当A是氢原子,羟基,氨基, 酰基氨基甲酰基,氨磺酰基,烷氧基或氰基。
    • 3. 发明授权
    • Method of processing silver halide photographic material and composition
for processing
    • 卤化银照相材料的处理方法和加工用组合物
    • US5342741A
    • 1994-08-30
    • US87886
    • 1993-07-09
    • Kiyoshi MorimotoShin-ichi MorishimaHiroshi Hayakawa
    • Kiyoshi MorimotoShin-ichi MorishimaHiroshi Hayakawa
    • G03C5/26G03C5/305G03C5/29
    • G03C5/305
    • A developer composition having improved stability to aerial oxidation, which contains at least one compound represented by formulae (A) and (B): ##STR1## where R.sub.1 and R.sub.2 each represent a hydroxyl group, an amino group, an acylamino group, an alkylsulfonylamino group, an arylsulfonylamino group, an alkoxycarbonylamino group, a mercapto group or an alkylthio group; and X represents a group of atoms selected from carbon and nitrogen which forms a 5-membered or 6-membered ring together with the two vinyl carbons substituted by R.sub.1 and R.sub.2, respectively, and the carbonyl carbon of formula (A); ##STR2## where R.sub.3 and R.sub.4 each represent a hydroxyl group, an amino group, an acylamino group, an alkylsulfonylamino group, an arylsulfonylamino group, an alkoxycarbonylamino group, a mercapto group or an alkylthio group; and Y represents a group of atoms selected from carbon, nitrogen and oxygen containing at least one ether bond, and Y forms a 6-membered ring together with the two vinyl carbons substituted by R.sub.3 and R.sub.4, respectively, and the carbonyl carbon of formula (B), provided that both R.sub.3 and R.sub.4 are not hydroxyl.
    • 具有改善的空气氧化稳定性的显影剂组合物,其含有至少一种由式(A)和(B)表示的化合物:其中R 1和R 2各自表示羟基,氨基,酰氨基 烷基磺酰基氨基,芳基磺酰基氨基,烷氧基羰基氨基,巯基或烷硫基; X表示分别与由R 1和R 2取代的两个乙烯基碳和式(A)的羰基碳一起形成5元或6元环的碳原子和氮原子的基团。 (B)其中R 3和R 4各自表示羟基,氨基,酰氨基,烷基磺酰基氨基,芳基磺酰基氨基,烷氧基羰基氨基,巯基或烷硫基。 Y表示选自含有至少一个醚键的碳,氮和氧的原子团,并且Y分别与由R3和R4取代的两个乙烯基碳一起形成6元环,并且式( B),条件是R3和R4不是羟基。
    • 6. 发明申请
    • SYSTEM MANAGEMENT APPARATUS AND SYSTEM MANAGEMENT METHOD
    • 系统管理装置和系统管理方法
    • US20130080604A1
    • 2013-03-28
    • US13378066
    • 2011-09-22
    • Hiroshi HayakawaTakeshi ArisakaTakaki KurodaTakumi Tomita
    • Hiroshi HayakawaTakeshi ArisakaTakaki KurodaTakumi Tomita
    • G06F15/177
    • H04L41/022H04L41/12
    • The present invention is for efficiently managing large numbers of apparatuses using multiple management protocols. A management information acquisition part 1A uses multiple different management protocols P1 and P2 to acquire management information for each of the management protocols from each apparatus 3. Anode configuration information management part 1B identifies apparatus configuration information acquired from the same apparatus of the respective apparatuses 3 by comparing the apparatus configuration information, and collectively manages these multiple pieces of apparatus configuration information as a single piece of apparatus configuration information. A component information management part 1C identifies multiple pieces of component information related to the same component, and manages these identified multiple pieces of component information after associating these pieces information with each other.
    • 本发明是为了有效地管理使用多种管理协议的大量设备。 管理信息获取部1A使用多个不同的管理协议P1和P2从每个装置3获取每个管理协议的管理信息。阳极配置信息管理部分1B识别从各个装置3的相同装置获取的装置配置信息, 比较装置配置信息,并将这些多件装置配置信息共同管理为单件装置配置信息。 分量信息管理部分1C识别与相同分量相关的多个分量信息,并且在将这些分块信息彼此关联之后管理这些识别的多个分量信息。
    • 9. 发明授权
    • Silicon annealed wafer and silicon epitaxial wafer
    • 硅退火晶片和硅外延晶片
    • US07273647B2
    • 2007-09-25
    • US10809712
    • 2004-03-26
    • Hideshi NishikawaNobumitsu TakaseKazuyuki EgashiraHiroshi Hayakawa
    • Hideshi NishikawaNobumitsu TakaseKazuyuki EgashiraHiroshi Hayakawa
    • B32B9/04
    • C30B33/00C30B29/06H01L21/3225Y10T428/21
    • A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 atoms/cm3, COP defects having a size of 0.1 μm or less in the highest frequency of occurrence and no COP defects having a size of 0.2 μm or more, oxygen precipitates at a density of 1×104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1×1014 atoms/cm3, employing the Czochralski method. Moreover, a silicon epitaxial wafer having very small defects and a uniform BMD distribution in the inside can be formed by growing an epitaxial layer on the surface of either the first type base material wafer or the second type base material wafer. Both the silicon annealed wafer and the silicon epitaxial wafer greatly reduce the rate of producing defective devices, thereby enabling the device productivity to be enhanced.
    • 具有在表面上没有COP缺陷的足够厚的厚层的硅退火晶片,并且可以通过退火具有小于1×10 14的浓度的氮的基材晶片来制造内部的足够均匀的BMD密度, / SUP>原子/ cm 3,出现发生频率的大小为0.1μm以下的COP缺陷,没有大小为0.2μm以上的COP缺陷,氧浓度为 1×10 4个/ cm 2以上的BMD(氧沉淀物),其中晶片的径向BMD密度的最大值与最小值之比 在特定温度范围内以特定平均温度梯度生长的基材晶片和氮浓度小于1×10 14原子/ cm 2的单晶的比冷却时间为3以下, 3,采用Czochralski法。 此外,可以通过在第一类型基材晶片或第二类型基材晶片的表面上生长外延层来形成具有非常小缺陷和均匀的BMD分布的硅外延晶片。 硅退火晶片和硅外延晶片都大大降低了制造缺陷器件的速率,从而能够提高器件的生产率。