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1. 发明授权

US08132462B2 Ultrasonographic device 有权
标题翻译：超声波装置
公开(公告)号：US08132462B2
公开(公告)日：2012-03-13
申请号：US11996532
申请日：2006-01-30
申请人： Takashi Azuma , Shinichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
发明人： Takashi Azuma , Shinichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
IPC分类号： G01N29/34 , H02N1/08
CPC分类号： A61B8/4483 , A61B8/08 , A61B8/4281 , B06B1/0292 , G01N29/2431 , G01S15/00
摘要： The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103).
摘要翻译：由作为基本单元的隔膜电声换能器（101）构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响，导致主光束灵敏度的漂移，由于声学噪声水平的上升引起的声学SN比的降低，以及超声波束的方向性的劣化。为了解决这个问题，提供一种充电控制器（充电监视器211）来控制电声换能器（101）中的电荷。充电监视部（102）监视充电量的变化。当充电量的变化小时，通过例如将接收信号乘以对应于变化量的校准系数，由控制器（104）校准发射灵敏度或接收灵敏度。此外，当电荷量的变化大时，例如，电荷可以从电荷发射体（103）重新发射。

2. 发明授权

US07860258B2 Electro-acoustic transducer device 有权
标题翻译：电声换能器装置
公开(公告)号：US07860258B2
公开(公告)日：2010-12-28
申请号：US11491198
申请日：2006-07-24
申请人： Takashi Azuma , Shin-ichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
发明人： Takashi Azuma , Shin-ichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
IPC分类号： H04R25/00
CPC分类号： B06B1/0292 , H04R19/005
摘要： A transducer for transmitting and receiving ultrasonic waves to a diaphragm-based ultrasonic transducer device using silicon as a base material. An electro-acoustic transducer device which can have a first electrode formed on top of, or inside, a substrate and having a thin film provided on top of the substrate. The device can also have a second electrode formed on top of, or inside, the thin film. A void layer can be provided between the first electrode and the second electrode. A charge-storage layer can be provided between the first electrode and the second electrode. A source electrode and a drain electrode can also be provided for measuring a quantity of electricity stored in the charge-storage layer.
摘要翻译：一种用于将超声波发送和接收到使用硅作为基材的基于隔膜的超声波换能器装置的换能器。一种电声换能器装置，其可以具有形成在基板的顶部或内部并且具有设置在基板顶部上的薄膜的第一电极。该器件还可以具有形成在薄膜的顶部或内部的第二电极。可以在第一电极和第二电极之间设置空隙层。可以在第一电极和第二电极之间设置电荷存储层。还可以提供源电极和漏电极来测量存储在电荷存储层中的电量。

3. 发明申请

US20070057603A1 Electro-acoustic transducer device 有权
标题翻译：电声换能器装置
公开(公告)号：US20070057603A1
公开(公告)日：2007-03-15
申请号：US11491198
申请日：2006-07-24
申请人： Takashi Azuma , Shin-ichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
发明人： Takashi Azuma , Shin-ichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
IPC分类号： H01L41/09
CPC分类号： B06B1/0292 , H04R19/005
摘要： In a semiconductor diaphragm type electro-acoustic transducer device having no necessity for a DC bias voltage applied as a result of a charge-stored layer being provide between electrodes, electro-mechanical conversion efficiency undergoes a change owing to time-dependent change in a quantity of stored electricity due to leakage of charge, and so forth. As for sensitivity of signal reception, provided by an ultrasonic array-transducer made up of the electro-acoustic transducer devices each as a basic unit, not only a main beam sensitivity undergoes drift as a result of drift in the electromechanical conversion efficiency, but also there result deterioration in an acoustic S/N ratio, and deterioration in directionality of an ultrasonic beam. In order to resolve those problems, there is provided an electro-acoustic transducer device comprising a first electrode formed on top of, or inside a substrate, a thin film using silicon or a silicon compound as a base material thereof, provided on top of the substrate, a second electrode formed on top of, or inside the thin film, a void layer provided between the first electrode and the second electrode, a charge-stored layer for storing charge given by the first electrode and the second electrode, provided between the first electrode and the second electrode, and a source electrode and a drain electrode, for measuring a quantity of electricity stored in the charge-storage layer.
摘要翻译：在半导体膜式电声换能器装置中，由于在电极之间提供电荷存储层，所以不需要施加直流偏置电压，电 - 机转换效率由于时间上的变化而发生变化由于电荷泄漏而导致的储存电力等。对于由作为基本单元的电声换能器构成的超声波阵列换能器提供的信号接收的灵敏度，由于机电转换效率的漂移，主光束的灵敏度不但会发生漂移，导致声S / N比的恶化，超声波束的方向性劣化。为了解决这些问题，提供了一种电声换能器装置，其包括在基板之上或之内形成的第一电极，使用硅或硅化合物作为其基材的薄膜，其设置在基板，形成在薄膜的上面或内部的第二电极，设置在第一电极和第二电极之间的空隙层，用于存储由第一电极和第二电极给出的电荷的电荷存储层，第一电极和第二电极以及源电极和漏电极，用于测量存储在电荷存储层中的电量。

4. 发明授权

US08546894B2 Capacitive micromachined ultrasonic transducer comprising electrode on flexible membrane 失效
标题翻译：电容式微机械超声换能器，包括柔性膜上的电极
公开(公告)号：US08546894B2
公开(公告)日：2013-10-01
申请号：US11316925
申请日：2005-12-27
申请人： Shuntaro Machida , Hiroshi Fukuda
发明人： Shuntaro Machida , Hiroshi Fukuda
IPC分类号： H01L29/82
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： A technology capable of preventing the degradation of operation reliability of CMUT when a lower electrode for CMUTs arranged in an array is divided in order to control the CMUTs independently is provided. Also, a technology capable of preventing the formation of a convex or concave distortion in an insulating film (membrane) of the cavity is provided. For its achievement, a size of a lower electrode divided for independently controlling each CMUT is set to be larger than that of a cavity. Also, a size of an upper electrode of the CMUT is set to be larger than that of the cavity.
摘要翻译：提供了一种能够防止在排列成阵列的CMUT的下部电极被分割以便独立地控制CMUT时CMUT的操作可靠性的劣化的技术。此外，还提供了能够防止在空腔的绝缘膜（膜）中形成凸起或凹陷变形的技术。为了实现，分开用于独立控制每个CMUT的下电极的尺寸被设定为大于空腔的大小。此外，CMUT的上部电极的尺寸被设定为大于空腔的大小。

5. 发明授权

US07701110B2 Ultrasonic transducer and manufacturing method thereof 失效
标题翻译：超声波换能器及其制造方法
公开(公告)号：US07701110B2
公开(公告)日：2010-04-20
申请号：US11498872
申请日：2006-08-04
申请人： Hiroshi Fukuda , Shuntaro Machida
发明人： Hiroshi Fukuda , Shuntaro Machida
IPC分类号： H02N1/00
CPC分类号： B06B1/0292
摘要： A technique capable of obtaining an ultrasonic transducer at high sensitivity in which a plurality of ultrasonic oscillators M1 each comprising a lower electrode fixed above a substrate, a diaphragm opposed to the substrate with a cavity being put therebetween, and an upper electrode disposed to the diaphragm are arranged above one identical substrate to constitute an ultrasonic transducer and a concentric convex corrugated region having a center identical with the center for the diaphragm is disposed to the diaphragm in an outer side of the cavity exceeding 70% for the radius thereof.
摘要翻译：一种能够以高灵敏度获得超声波换能器的技术，其中多个超声波振荡器M1各自包括固定在基板上的下电极，与其间具有空腔的基板相对的隔膜以及设置在隔膜上的上电极布置在一个相同的基板之上以构成超声波换能器，并且具有与隔膜中心相同的中心的同心的凸形波纹状区域设置在空腔的外侧，对于其半径超过70％。

6. 发明申请

US20090301199A1 ULTRASONOGRAPHIC DEVICE 有权
标题翻译：超声波设备
公开(公告)号：US20090301199A1
公开(公告)日：2009-12-10
申请号：US11996532
申请日：2006-01-30
申请人： Takashi Azuma , Shinichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
发明人： Takashi Azuma , Shinichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
IPC分类号： G01N29/34 , H02N1/08
CPC分类号： A61B8/4483 , A61B8/08 , A61B8/4281 , B06B1/0292 , G01N29/2431 , G01S15/00
摘要： The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103). The series of operations is controlled by the controller (104), and thus sensitivity variation caused by difference in the changes with elapsed time, particularly between the plural transducers, is calibrated.
摘要翻译：由作为基本单元的隔膜电声换能器（101）构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响，导致主光束灵敏度的漂移，由于声学噪声水平的上升引起的声学SN比的降低，以及超声波束的方向性的劣化。为了解决这个问题，提供一种充电控制器（充电监视器211）来控制电声换能器（101）中的电荷。充电监视部（102）监视充电量的变化。当充电量的变化小时，通过例如将接收信号乘以对应于变化量的校准系数，由控制器（104）校准发射灵敏度或接收灵敏度。此外，当电荷量的变化大时，例如，电荷可以从电荷发射体（103）重新发射。一系列操作由控制器（104）控制，因此校正了由于经过时间的变化，特别是多个换能器之间的差异引起的灵敏度变化。

7. 发明申请

US20070057600A1 Ultrasonic transducer and manufacturing method thereof 失效
标题翻译：超声波换能器及其制造方法
公开(公告)号：US20070057600A1
公开(公告)日：2007-03-15
申请号：US11498872
申请日：2006-08-04
申请人： Hiroshi Fukuda , Shuntaro Machida
发明人： Hiroshi Fukuda , Shuntaro Machida
IPC分类号： H01L41/08
CPC分类号： B06B1/0292
摘要： A technique capable of obtaining an ultrasonic transducer at high sensitivity in which a plurality of ultrasonic oscillators M1 each comprising a lower electrode fixed above a substrate, a diaphragm opposed to the substrate with a cavity being put therebetween, and an upper electrode disposed to the diaphragm are arranged above one identical substrate to constitute an ultrasonic transducer and a concentric convex corrugated region having a center identical with the center for the diaphragm is disposed to the diaphragm in an outer side of the cavity exceeding 70% for the radius thereof.
摘要翻译：一种能够以高灵敏度获得超声波换能器的技术，其中，包括固定在基板上的下电极的多个超声波振荡器M 1，与其间具有空腔的基板相对的隔膜以及设置在该基板上的上电极膜片布置在一个相同基板上方以构成超声波换能器，并且具有与隔膜中心相同的中心的同心凸波纹状区域设置在空腔的外侧，对于其半径超过70％。

8. 发明申请

US20060179640A1 Ultrasonic transducer and method for manufacturing the same 失效
标题翻译：超声波换能器及其制造方法
公开(公告)号：US20060179640A1
公开(公告)日：2006-08-17
申请号：US11316925
申请日：2005-12-27
申请人： Shuntaro Machida , Hiroshi Fukuda
发明人： Shuntaro Machida , Hiroshi Fukuda
IPC分类号： H04R31/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： A technology capable of preventing the degradation of operation reliability of CMUT when a lower electrode for CMUTs arranged in an array is divided in order to control the CMUTs independently is provided. Also, a technology capable of preventing the formation of a convex or concave distortion in an insulating film (membrane) of the cavity is provided. For its achievement, a size of a lower electrode divided for independently controlling each CMUT is set to be larger than that of a cavity. Also, a size of an upper electrode of the CMUT is set to be larger than that of the cavity.
摘要翻译：提供了一种能够防止在排列成阵列的CMUT的下部电极被分割以便独立地控制CMUT时CMUT的操作可靠性的劣化的技术。此外，还提供了能够防止在空腔的绝缘膜（膜）中形成凸起或凹陷变形的技术。为了实现，分开用于独立控制每个CMUT的下电极的尺寸被设定为大于空腔的大小。此外，CMUT的上部电极的尺寸被设定为大于空腔的大小。

9. 发明授权

US08431420B2 Manufacturing method of ultrasonic probe and ultrasonic probe 失效
标题翻译：超声波探头和超声波探头的制造方法
公开(公告)号：US08431420B2
公开(公告)日：2013-04-30
申请号：US13144229
申请日：2010-01-06
申请人： Takashi Kobayashi , Shuntaro Machida
发明人： Takashi Kobayashi , Shuntaro Machida
IPC分类号： H01L21/66
CPC分类号： B06B1/0292
摘要： The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.
摘要翻译：改善了半导体器件（CMUT）的制造成品率。在形成用作保护膜的聚酰亚胺膜之前，膜被反复振动以评估上电极和下电极之间的击穿电压，以及上电极和下电极之间的击穿电压的缺陷CMUT电池的上电极由于膜的重复振动预先被去除以切断与其他正常CMUT电池的电连接，电极被还原。通过这种方式，在块RB或包括恢复的CMUT单元RC的通道RCH中，防止了在膜的重复振动之后上部电极和下部电极之间的击穿电压的降低。

10. 发明申请

US20110086443A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110086443A1
公开(公告)日：2011-04-14
申请号：US12999478
申请日：2009-06-05
申请人： Takashi Kobayashi , Shuntaro Machida , Kunio Hashiba
发明人： Takashi Kobayashi , Shuntaro Machida , Kunio Hashiba
IPC分类号： H01L21/82 , H01L21/66
CPC分类号： H04R31/00 , B81B2201/0257 , B81B2207/053 , B81C1/00214
摘要： A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2. Next, the plurality of first chips 1 judged as the superior product are adjacently arranged on the front surface of the second chip 2 judged as the superior product in plane in a Y direction so that lower electrodes 5 of the adjacent first chips 1 are electrically connected with each other via a through electrode 6, a bump 8, and a wiring layer 7.
摘要翻译：半导体器件（电容式微加工超声换能器）的制造产量增加。制造在第一半导体晶片的前表面上形成多个具有发送和接收超声波功能的多个单元的多个第一芯片1，并且将第一芯片1判断为上/下产品然后，第一半导体晶片被配置成多个第一芯片1.接着，制造在第二半导体晶片的前表面上形成有布线层的多个第二芯片2，将芯片2判断为优劣产品，然后将第二半导体晶片投入多个第二芯片2.接下来，判断为优质产品的多个第一芯片1相邻布置在第二芯片2在Y方向上被认为是平面上的优异产品，使得相邻的第一芯片1的下电极5经由通电极6，凸块8和布线层7。

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