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1. 发明授权

US08431420B2 Manufacturing method of ultrasonic probe and ultrasonic probe 失效
标题翻译：超声波探头和超声波探头的制造方法
公开(公告)号：US08431420B2
公开(公告)日：2013-04-30
申请号：US13144229
申请日：2010-01-06
申请人： Takashi Kobayashi , Shuntaro Machida
发明人： Takashi Kobayashi , Shuntaro Machida
IPC分类号： H01L21/66
CPC分类号： B06B1/0292
摘要： The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.
摘要翻译：改善了半导体器件（CMUT）的制造成品率。在形成用作保护膜的聚酰亚胺膜之前，膜被反复振动以评估上电极和下电极之间的击穿电压，以及上电极和下电极之间的击穿电压的缺陷CMUT电池的上电极由于膜的重复振动预先被去除以切断与其他正常CMUT电池的电连接，电极被还原。通过这种方式，在块RB或包括恢复的CMUT单元RC的通道RCH中，防止了在膜的重复振动之后上部电极和下部电极之间的击穿电压的降低。

2. 发明申请

US20110086443A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110086443A1
公开(公告)日：2011-04-14
申请号：US12999478
申请日：2009-06-05
申请人： Takashi Kobayashi , Shuntaro Machida , Kunio Hashiba
发明人： Takashi Kobayashi , Shuntaro Machida , Kunio Hashiba
IPC分类号： H01L21/82 , H01L21/66
CPC分类号： H04R31/00 , B81B2201/0257 , B81B2207/053 , B81C1/00214
摘要： A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2. Next, the plurality of first chips 1 judged as the superior product are adjacently arranged on the front surface of the second chip 2 judged as the superior product in plane in a Y direction so that lower electrodes 5 of the adjacent first chips 1 are electrically connected with each other via a through electrode 6, a bump 8, and a wiring layer 7.
摘要翻译：半导体器件（电容式微加工超声换能器）的制造产量增加。制造在第一半导体晶片的前表面上形成多个具有发送和接收超声波功能的多个单元的多个第一芯片1，并且将第一芯片1判断为上/下产品然后，第一半导体晶片被配置成多个第一芯片1.接着，制造在第二半导体晶片的前表面上形成有布线层的多个第二芯片2，将芯片2判断为优劣产品，然后将第二半导体晶片投入多个第二芯片2.接下来，判断为优质产品的多个第一芯片1相邻布置在第二芯片2在Y方向上被认为是平面上的优异产品，使得相邻的第一芯片1的下电极5经由通电极6，凸块8和布线层7。

3. 发明授权

US09085012B2 Ultrasonic transducer and ultrasonic diagnostic apparatus provided with same 有权
标题翻译：超声波换能器和超声波诊断装置
公开(公告)号：US09085012B2
公开(公告)日：2015-07-21
申请号：US13321947
申请日：2010-05-21
申请人： Shuntaro Machida , Takashi Kobayashi
发明人： Shuntaro Machida , Takashi Kobayashi
IPC分类号： B06B1/02 , B81B3/00 , G01N29/24 , H04R19/00 , A61B8/00
CPC分类号： B06B1/0292 , A61B8/00 , A61B8/4483 , B81B3/0021 , B81B2201/0257 , G01N29/2406 , H04R19/005
摘要： For disposing projections of insulating film protruding into a hollow part in CMUT in order to suppress injection of electrical charge into the insulating film due to contact of a lower surface of a membrane with a lower surface of the hollow part, there are provided a structure of disposed projections preferred for suppressing increase in driving voltage for CMUT and decrease in receiving sensitivity, and an ultrasonic diagnostic apparatus using the same. The ultrasonic transducer of the present invention comprises a first electrode, a lower insulating film formed on the first electrode, an upper insulating film provided so as to form a hollow part above the lower insulating film, and a second electrode formed on the upper insulating film, and is characterized in that the lower insulating film or the upper insulating film has projections on the side of the hollow part, and the first electrode or the second electrode has openings formed at positions corresponding to the positions at which the projections are formed.
摘要翻译：为了在CMUT中设置突出于中空部分的绝缘膜的突起，以便由于膜的下表面与中空部分的下表面的接触而抑制将电荷注入到绝缘膜中，因此提供了一种结构优选用于抑制CMUT的驱动电压的增加和接收灵敏度的降低的放置突起，以及使用该突起的超声波诊断装置。本发明的超声波换能器包括第一电极，形成在第一电极上的下绝缘膜，设置成在下绝缘膜上形成中空部的上绝缘膜，以及形成在上绝缘膜上的第二电极其特征在于，所述下绝缘膜或所述上绝缘膜在所述中空部的一侧具有突起，并且所述第一电极或所述第二电极具有形成在与形成所述突起的位置对应的位置的开口。

4. 发明申请

US20120069701A1 ULTRASONIC TRANSDUCER AND ULTRASONIC DIAGNOSTIC APPARATUS PROVIDED WITH SAME 有权
标题翻译：超声波传感器及超声波诊断仪
公开(公告)号：US20120069701A1
公开(公告)日：2012-03-22
申请号：US13321947
申请日：2010-05-21
申请人： Shuntaro Machida , Takashi Kobayashi
发明人： Shuntaro Machida , Takashi Kobayashi
IPC分类号： H04R19/00
CPC分类号： B06B1/0292 , A61B8/00 , A61B8/4483 , B81B3/0021 , B81B2201/0257 , G01N29/2406 , H04R19/005
摘要： For disposing projections of insulating film protruding into a hollow part in CMUT in order to suppress injection of electrical charge into the insulating film due to contact of a lower surface of a membrane with a lower surface of the hollow part, there are provided a structure of disposed projections preferred for suppressing increase in driving voltage for CMUT and decrease in receiving sensitivity, and an ultrasonic diagnostic apparatus using the same. The ultrasonic transducer of the present invention comprises a first electrode, a lower insulating film formed on the first electrode, an upper insulating film provided so as to form a hollow part above the lower insulating film, and a second electrode formed on the upper insulating film, and is characterized in that the lower insulating film or the upper insulating film has projections on the side of the hollow part, and the first electrode or the second electrode has openings formed at positions corresponding to the positions at which the projections are formed.
摘要翻译：为了在CMUT中设置突出于中空部分的绝缘膜的突起，以便由于膜的下表面与中空部分的下表面的接触而抑制将电荷注入到绝缘膜中，因此提供了一种结构优选用于抑制CMUT的驱动电压的增加和接收灵敏度的降低的放置突起，以及使用该突起的超声波诊断装置。本发明的超声波换能器包括第一电极，形成在第一电极上的下绝缘膜，设置成在下绝缘膜上形成中空部的上绝缘膜，以及形成在上绝缘膜上的第二电极其特征在于，所述下绝缘膜或所述上绝缘膜在所述中空部的一侧具有突起，并且所述第一电极或所述第二电极具有形成在与形成所述突起的位置对应的位置的开口。

5. 发明授权

US08119426B2 Method of manufacturing an ultrasonic transducer semiconductor device 有权
标题翻译：制造超声波换能器半导体器件的方法
公开(公告)号：US08119426B2
公开(公告)日：2012-02-21
申请号：US12999478
申请日：2009-06-05
申请人： Takashi Kobayashi , Shuntaro Machida , Kunio Hashiba
发明人： Takashi Kobayashi , Shuntaro Machida , Kunio Hashiba
IPC分类号： H01L21/66 , H01L21/00
CPC分类号： H04R31/00 , B81B2201/0257 , B81B2207/053 , B81C1/00214
摘要： A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2. Next, the plurality of first chips 1 judged as the superior product are adjacently arranged on the front surface of the second chip 2 judged as the superior product in plane in a Y direction so that lower electrodes 5 of the adjacent first chips 1 are electrically connected with each other via a through electrode 6, a bump 8, and a wiring layer 7.
摘要翻译：半导体器件（电容式微加工超声换能器）的制造产量增加。制造在第一半导体晶片的前表面上形成多个具有发送和接收超声波功能的多个单元的多个第一芯片1，并且将第一芯片1判断为上/下产品然后，第一半导体晶片被配置成多个第一芯片1.接着，制造在第二半导体晶片的前表面上形成有布线层的多个第二芯片2，将芯片2判断为优劣产品，然后将第二半导体晶片投入多个第二芯片2.接下来，判断为优质产品的多个第一芯片1相邻布置在第二芯片2在Y方向上被认为是平面上的优异产品，使得相邻的第一芯片1的下电极5经由通电极6，凸块8和布线层7。

6. 发明申请

US20110272693A1 MANUFACTURING METHOD OF ULTRASONIC PROBE AND ULTRASONIC PROBE 失效
标题翻译：超声探头和超声探头的制造方法
公开(公告)号：US20110272693A1
公开(公告)日：2011-11-10
申请号：US13144229
申请日：2010-01-06
申请人： Takashi Kobayashi , Shuntaro Machida
发明人： Takashi Kobayashi , Shuntaro Machida
IPC分类号： H01L29/66 , H01L21/66
CPC分类号： B06B1/0292
摘要： The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.
摘要翻译：改善了半导体器件（CMUT）的制造成品率。在形成用作保护膜的聚酰亚胺膜之前，膜被反复振动以评估上电极和下电极之间的击穿电压，以及上电极和下电极之间的击穿电压的缺陷CMUT电池的上电极由于膜的重复振动预先被去除以切断与其他正常CMUT电池的电连接，电极被还原。通过这种方式，在块RB或包括恢复的CMUT单元RC的通道RCH中，防止了在膜的重复振动之后上部电极和下部电极之间的击穿电压的降低。

7. 发明授权

US07923795B2 Ultrasonic transducer device 有权
标题翻译：超音波换能器
公开(公告)号：US07923795B2
公开(公告)日：2011-04-12
申请号：US12121736
申请日：2008-05-15
申请人： Takashi Kobayashi , Shuntaro Machida
发明人： Takashi Kobayashi , Shuntaro Machida
IPC分类号： H01L29/82
CPC分类号： B06B1/0292 , G01N29/2406
摘要： A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes.
摘要翻译：通过绝缘膜在半导体衬底上形成下电极，形成第一和第二绝缘膜以覆盖下电极，在第二绝缘膜上方形成上电极，形成第三至第五绝缘膜以覆盖上电极并且在下电极和上电极之间的第一和第二绝缘膜之间形成空隙。超声换能器包括下电极，第一绝缘膜，空隙，第二绝缘膜和上电极。与下部电极接触的第一绝缘膜的一部分由氧化硅构成，与上部电极接触的第二绝缘膜的一部分由氧化硅构成，第一或第二绝缘膜包括位于上下电极并不与上电极和下电极接触。

8. 发明申请

US20110316383A1 ULTRASONIC TRANSDUCER, METHOD OF PRODUCING SAME, AND ULTRASONIC PROBE USING SAME 审中-公开
标题翻译：超声波传感器，其制造方法和使用其的超声波探头
公开(公告)号：US20110316383A1
公开(公告)日：2011-12-29
申请号：US13201114
申请日：2010-02-23
申请人： Shuntaro Machida , Takashi Kobayashi
发明人： Shuntaro Machida , Takashi Kobayashi
IPC分类号： H02N1/00 , H05K3/02
CPC分类号： B06B1/0292 , B81C1/00158 , B81C1/00182 , B81C1/00214 , B81C1/00476 , B81C1/00531 , B81C1/00611 , B81C2201/0104 , B81C2201/0107 , B81C2201/0109 , C09K13/00 , C23F4/00 , H01L21/30604 , H01L29/84 , Y10T29/49156
摘要： Disclosed is an art for a capacitive micromachined ultrasonic transducer (CMUT), which suppresses deformation in a cavity, non-uniformity in the thickness of an insulating film enclosing the cavity, and deterioration in the flatness of the surface profile of a membrane, even when the bottom electrode of the ultrasonic transducer is electrically connected from the bottom of the bottom electrode. The ultrasonic transducer is provided with: a bottom electrode (306); an electric connection part (304) which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity (308) which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity (308); and a top electrode (310) which is formed on the second insulating film so as to overlap the cavity (308) when seen from above. The electric connection part (304) to the bottom electrode (306) is positioned so as to not overlap the cavity (308) when seen from above.
摘要翻译：公开了一种电容微加工超声波换能器（CMUT）的技术，其抑制空腔中的变形，包围空腔的绝缘膜的厚度不均匀，以及膜的表面轮廓的平坦度的劣化，即使当超声波换能器的底部电极从底部电极的底部电连接。所述超声波换能器设置有：底部电极（306）; 电连接部（304），其从所述底部电极的底部连接到所述底部电极; 形成为覆盖底部电极的第一绝缘膜; 形成在第一绝缘膜上以便从上方观察时与底部电极重叠的空腔（308）; 形成为覆盖空腔（308）的第二绝缘膜; 以及当从上方观察时，形成在第二绝缘膜上以与空腔（308）重叠的顶部电极（310）。当从上方观察时，到底部电极（306）的电连接部分（304）被定位成不与空腔（308）重叠。

9. 发明授权

US08106395B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08106395B2
公开(公告)日：2012-01-31
申请号：US12113923
申请日：2008-05-01
申请人： Shuntaro Machida , Takashi Kobayashi
发明人： Shuntaro Machida , Takashi Kobayashi
IPC分类号： H01L21/66 , H01L23/58
CPC分类号： H01L22/32 , B81C99/0045 , G01R31/2884 , H01L21/78 , H01L2224/05554
摘要： A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas sectioned by chip areas is prepared. Next, pads to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas. Subsequently, the respective test areas are tested by a same probe card via the plurality of pads.
摘要翻译：提供了即使对于大面积芯片也能够通过普通的测试装置进行探针测试的半导体器件的制造技术。制备包括通过半导体工艺在器件区域上形成并包括由芯片区域划分的多个测试区域的器件的芯片。接下来，在相应的多个测试区域上的相应位置处形成要与该器件电连接的焊盘。随后，通过多个焊盘通过相同的探针卡测试各个测试区域。

10. 发明申请

US20080283945A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080283945A1
公开(公告)日：2008-11-20
申请号：US12121736
申请日：2008-05-15
申请人： Takashi Kobayashi , Shuntaro Machida
发明人： Takashi Kobayashi , Shuntaro Machida
IPC分类号： H01L29/84 , H01L41/083
CPC分类号： B06B1/0292 , G01N29/2406
摘要： A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes.
摘要翻译：通过绝缘膜在半导体衬底上形成下电极，形成第一和第二绝缘膜以覆盖下电极，在第二绝缘膜上方形成上电极，形成第三至第五绝缘膜以覆盖上电极并且在下电极和上电极之间的第一和第二绝缘膜之间形成空隙。超声换能器包括下电极，第一绝缘膜，空隙，第二绝缘膜和上电极。与下部电极接触的第一绝缘膜的一部分由氧化硅构成，与上部电极接触的第二绝缘膜的一部分由氧化硅构成，第一或第二绝缘膜包括位于上下电极并不与上电极和下电极接触。

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