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1. 发明授权

US5045922A Installation structure of integrated circuit devices 失效
标题翻译：集成电路器件的安装结构
公开(公告)号：US5045922A
公开(公告)日：1991-09-03
申请号：US583144
申请日：1990-09-17
申请人： Hironori Kodama , Satoru Ogihara , Hideo Arakawa , Hirokazu Inoue , Yoshiyuki Yasutomi , Tadahiko Miyoshi
发明人： Hironori Kodama , Satoru Ogihara , Hideo Arakawa , Hirokazu Inoue , Yoshiyuki Yasutomi , Tadahiko Miyoshi
IPC分类号： H01L25/18 , H01L23/538 , H01L25/04 , H01L25/065 , H01L25/10 , H05K1/02 , H05K1/03 , H05K1/14 , H05K1/18
CPC分类号： H05K1/0271 , H01L23/5383 , H01L23/5385 , H01L25/0655 , H01L25/105 , H05K1/0206 , H01L2224/16 , H01L2224/16225 , H01L2224/73253 , H01L2225/1005 , H01L2924/01014 , H01L2924/01019 , H01L2924/01079 , H01L2924/09701 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/16152 , H05K1/0201 , H05K1/0306 , H05K1/141 , H05K1/181 , H05K2201/068 , H05K2201/10522 , H05K2201/10704 , H05K2201/10734
摘要： An installation structure of integrated circuit devices, in which two or more types of integrated circuit devices of different base materials are installed onto the same installation substrate. Since the installation structure has a construction according to different characteristics such as a thermal conductivity, heat generation amount, thermal expansion coefficient and the like of the integrated circuit devices made of different materials, the reliability of each device and its connection and the reduction of the costs required for the cooling method can be presented.
摘要翻译：集成电路装置的安装结构，其中不同基材的两种或更多种集成电路装置安装在同一安装基板上。由于安装结构具有根据由不同材料制成的集成电路器件的热导率，发热量，热膨胀系数等不同特性的结构，因此每个器件的可靠性及其连接以及减少可以呈现冷却方法所需的成本。

2. 发明授权

US5350886A Mounting substrate 失效
标题翻译：安装基板
公开(公告)号：US5350886A
公开(公告)日：1994-09-27
申请号：US659672
申请日：1991-02-25
申请人： Kunio Miyazaki , Yutaka Sugita , Akio Mukoh , Tadahiko Miyoshi , Osamu Miura , Akio Takahashi , Shunichi Numata , Satoru Ogihara , Kazuji Yamada , Hirokazu Inoue , Fumiyuki Kobayashi
发明人： Kunio Miyazaki , Yutaka Sugita , Akio Mukoh , Tadahiko Miyoshi , Osamu Miura , Akio Takahashi , Shunichi Numata , Satoru Ogihara , Kazuji Yamada , Hirokazu Inoue , Fumiyuki Kobayashi
IPC分类号： H01L23/538 , H05K1/03 , H05K3/46 , H05K1/00
CPC分类号： H01L23/5385 , H05K3/462 , H05K3/4629 , H01L2924/0002 , H05K1/0306 , H05K2201/0379 , H05K2203/061
摘要： An LSI mounting substrate having a multilayered thin film wiring portion, with the thin film wiring portion being divided into wiring units each composed of a plurality of wiring layers, with the wirings between the units being electrically connected through connecting pads defined in the same surface as that of a surface conductive layer of the unit.
摘要翻译：一种具有多层薄膜布线部分的LSI安装基板，薄膜布线部分被分成多个布线层的布线单元，各单元之间的布线通过与该单元的表面导电层的那个。

3. 发明授权

US5271871A Conductive material and process for preparing the same 失效
标题翻译：导电材料及其制备方法
公开(公告)号：US5271871A
公开(公告)日：1993-12-21
申请号：US754501
申请日：1991-09-03
申请人： Yoshiyuki Yasutomi , Tadahiko Miyoshi , Masahisa Sobue , Nobuyuki Yamashita , Hiroshi Nagase , Kiyohiko Tanno , Shoji Arimoto , Fumio Jooraku
发明人： Yoshiyuki Yasutomi , Tadahiko Miyoshi , Masahisa Sobue , Nobuyuki Yamashita , Hiroshi Nagase , Kiyohiko Tanno , Shoji Arimoto , Fumio Jooraku
IPC分类号： C04B35/58 , C04B35/65 , H01B1/06
CPC分类号： C04B35/58014 , C04B35/58 , C04B35/58007 , C04B35/58028 , C04B35/58042 , C04B35/632 , C04B35/634 , C04B35/65 , C04B35/806
摘要： The invention provides a conductor comprising a reaction-sintered body of a conductive nitride produced from a powder of at least one metal selected from Ti, Zr, V, Nb, Ta, Cr, Ce, Co, Mn, Hf, W, Mo, Fe, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Lu, Th and Ni, and a process for producing such conductor by heating a molding containing a metal powder in a nitriding gaseous atmosphere containing no CO gas.
摘要翻译：本发明提供了一种导体，其包括由选自Ti，Zr，V，Nb，Ta，Cr，Ce，Co，Mn，Hf，W，Mo中的至少一种金属的粉末制成的导电氮化物的反应烧结体， Fe，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Yb，Lu，Th和Ni，以及通过在不含CO气体的氮化气氛中加热含有金属粉末的成型体。

4. 发明授权

US5200373A High strength composite ceramic structure and process for producing the same 失效
标题翻译：高强度复合陶瓷结构及其制造方法
公开(公告)号：US5200373A
公开(公告)日：1993-04-06
申请号：US670734
申请日：1991-03-18
申请人： Yoshiyuki Yasutomi , Seiji Watahiki , Junji Sakai , Akio Chiba , Tadahiko Miyoshi , Masahisa Sobue
发明人： Yoshiyuki Yasutomi , Seiji Watahiki , Junji Sakai , Akio Chiba , Tadahiko Miyoshi , Masahisa Sobue
IPC分类号： C04B35/00 , C04B35/565 , C04B35/58 , C04B35/591 , C04B35/622 , C04B35/80 , C04B38/00 , C23C16/34
CPC分类号： C04B35/565 , C04B35/58 , C04B35/58014 , C04B35/58028 , C04B35/581 , C04B35/591 , C04B35/63408 , C04B35/63416 , C04B35/645 , C04B35/80 , C04B38/00 , C23C16/345
摘要： The present invention is a composite ceramic structure having a porosity of 5 to 40% by volume comprising particles selected from the group consisting of grains and whiskers of at least one inorganic compound AB, where B is oxygen, nitrogen or carbon and A is any metal so the difference in electronegativity between A and B is less than 1.7; or particles selected from the group consisting of grains and whiskers of an inorganic compound, where there is a difference of 1.7 and higher between the components, and having layers of the inorganic compound AB formed on the surfaces of the particles. The particles are bonded together by silicon nitride particles having an average particle size of less than 0.2 micron. The composite ceramic structure is produced by sintering a shape composed of particles of AB or composed of particles having layers of AB formed on the surfaces of the particles in a gaseous atmosphere containing silicon and nitrogen to grow silicon nitride particles on the surfaces of the shaped inorganic particles.
摘要翻译：本发明是具有5〜40体积％的孔隙率的复合陶瓷结构体，其包含选自至少一种无机化合物AB的晶粒和晶须的颗粒，其中B为氧，氮或碳，A为任何金属所以A和B之间的电负性差异小于1.7; 或选自由无机化合物的晶粒和晶须组成的组的颗粒，其中组分之间的差异为1.7以上，并且在颗粒表面上形成无机化合物AB的层。颗粒通过平均粒径小于0.2微米的氮化硅颗粒结合在一起。复合陶瓷结构体是通过在包含硅和氮的气体气氛中烧结由颗粒表面上形成的AB颗粒或由颗粒表面形成的颗粒组成的形状来生产的，以在成形无机材料的表面上生长氮化硅颗粒粒子。

5. 发明授权

US5085806A Conductive material and process for preparing the same 失效
标题翻译：导电材料及其制备方法
公开(公告)号：US5085806A
公开(公告)日：1992-02-04
申请号：US319307
申请日：1989-03-06
申请人： Yoshiyuki Yasutomi , Tadahiko Miyoshi , Masahisa Sobue , Nobuyuki Yamashita , Hiroshi Nagase , Kiyohiko Tanno , Shoji Arimoto , Fumio Jooraku
发明人： Yoshiyuki Yasutomi , Tadahiko Miyoshi , Masahisa Sobue , Nobuyuki Yamashita , Hiroshi Nagase , Kiyohiko Tanno , Shoji Arimoto , Fumio Jooraku
IPC分类号： C04B35/584 , C04B35/58 , C04B35/581 , C04B35/65
CPC分类号： C04B35/58042 , C04B35/5156 , C04B35/5158 , C04B35/58 , C04B35/58007 , C04B35/58014 , C04B35/58028 , C04B35/581 , C04B35/584 , C04B35/6303 , C04B35/632 , C04B35/63408 , C04B35/645 , C04B35/65 , C04B35/806
摘要： The invention provides a conductor comprising a reaction-sintered body of a conductive nitride produced from a powder of at least one metal selected from Ti, Zr, V, Nb, Ta, Cr, Ce, Co, Mn, Hf, W, Mo, Fe, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Lu, Th and Ni, and a process for producing such conductor by heating a molding containing a metal powder in a nitriding gaseous atmosphere containing no CO gas.

6. 发明授权

US5403674A Conductive material and process for preparing the same 失效
标题翻译：导电材料及其制备方法
公开(公告)号：US5403674A
公开(公告)日：1995-04-04
申请号：US118207
申请日：1993-09-09
申请人： Yoshiyuki Yasutomi , Tadahiko Miyoshi , Masahisa Sobue , Nobuyuki Yamashita , Hiroshi Nagase , Kiyohiko Tanno , Shoji Arimoto , Fumio Jooraku
发明人： Yoshiyuki Yasutomi , Tadahiko Miyoshi , Masahisa Sobue , Nobuyuki Yamashita , Hiroshi Nagase , Kiyohiko Tanno , Shoji Arimoto , Fumio Jooraku
IPC分类号： C04B35/58 , C04B35/65 , B32B9/00
CPC分类号： C04B35/58014 , C04B35/58 , C04B35/58007 , C04B35/58028 , C04B35/58042 , C04B35/632 , C04B35/634 , C04B35/65 , C04B35/806
摘要： The invention provides a conductor comprising a reaction-sintered body of a conductive nitride produced from a powder of at least one metal selected from Ti, Zr, V, Nb, Ta, Cr, Ce, Co, Mn, Hf, W, Mo, Fe, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Lu, Th and Ni, and a process for producing such conductor by heating a molding containing a metal powder in a nitriding gaseous atmosphere containing no CO gas.
摘要翻译：本发明提供了一种导体，其包括由选自Ti，Zr，V，Nb，Ta，Cr，Ce，Co，Mn，Hf，W，Mo中的至少一种金属的粉末制成的导电氮化物的反应烧结体， Fe，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Yb，Lu，Th和Ni，以及通过在不含CO气体的氮化气氛中加热含有金属粉末的成型体。

7. 发明授权

US4729972A High toughness ceramics and process for the preparation thereof 失效
标题翻译：高韧性陶瓷及其制备方法
公开(公告)号：US4729972A
公开(公告)日：1988-03-08
申请号：US816303
申请日：1986-01-06
申请人： Hironori Kodama , Akihiro Gotoo , Tadahiko Miyoshi , Hiroshi Sakamoto , Takaaki Suzuki
发明人： Hironori Kodama , Akihiro Gotoo , Tadahiko Miyoshi , Hiroshi Sakamoto , Takaaki Suzuki
IPC分类号： C04B35/565 , C04B35/575 , C04B35/56 , C04B35/16
CPC分类号： C04B35/565 , C04B35/575
摘要： The present invention relates to a sintered product containing silicon carbide as a main component which comprises a phase(a) containing at least one metal selected from among Al, Sc, Y and rare earth elements and oxygen, a particle phase(b) comprising at least one metal carbide selected from among carbides of Ti, Zr, Hf, Va, Nb, Ta, W and the like, a composite particle phase(c) comprising said phase(a) and said phase(b) surrounding the phase(a) and silicon carbide matrix(d) in which the above phase(a), (b) and (c) are dispersed.The silicon carbide sintered product of the present invention exhibits a remarkably high strength and a remarkably high toughness which have not been attained up to this time, so that it can form various heat-resistant structural materials having a high reliability.
摘要翻译：本发明涉及含有碳化硅作为主要成分的烧结产品，该烧结产品包括含有选自Al，Sc，Y和稀土元素和氧中的至少一种金属的相（a），含有选自Ti，Zr，Hf，Va，Nb，Ta，W等的碳化物中的至少一种金属碳化物，包含所述相（a）和所述相（b）的复合粒子相（c））和上述相（a），（b）和（c）分散的碳化硅基体（d）。本发明的碳化硅烧结体在此之前显示出非常高的强度和显着的高韧性，从而可以形成具有高可靠性的各种耐热结构材料。

8. 发明授权

US5055430A Carbon coated silicon carbide, silicon nitride or sialon fibers in a ceramic matrix 失效
标题翻译：碳化硅碳化硅，硅氮化硅或硅铝硅片陶瓷基质
公开(公告)号：US5055430A
公开(公告)日：1991-10-08
申请号：US453928
申请日：1989-12-20
申请人： Hiroshi Sakamoto , Tadahiko Miyoshi
发明人： Hiroshi Sakamoto , Tadahiko Miyoshi
IPC分类号： C04B35/599 , C04B35/80 , C04B35/81
CPC分类号： C04B35/80 , Y10S428/902 , Y10T428/249924 , Y10T428/2916 , Y10T428/2918 , Y10T428/292 , Y10T428/2938 , Y10T428/30
摘要： The present invention provides fiber-reinforced ceramics containing at least one member of fibers and whiskers as distributed in a sintering ceramic matrix, which comprises the ceramic matrix being composed mainly of SiC, Si.sub.3 N.sub.4 and Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z, where 0
摘要翻译：本发明提供了包含分布在烧结陶瓷基体中的至少一种纤维和晶须的纤维增强陶瓷，其包含主要由SiC，Si3N4和Si6-zAlzOzN8-z组成的陶瓷基体，其中0

9. 发明授权

US4266979A Oxygen sensor ceramic and process for preparing the same 失效
标题翻译：氧传感器陶瓷及其制备方法
公开(公告)号：US4266979A
公开(公告)日：1981-05-12
申请号：US080469
申请日：1979-10-01
申请人： Tadahiko Miyoshi , Takeo Yamazaki
发明人： Tadahiko Miyoshi , Takeo Yamazaki
IPC分类号： C04B35/48 , C04B35/486 , G01N27/12 , G01N27/407 , G01N27/409 , H01M8/12
CPC分类号： G01N27/4073 , C04B35/486 , H01M8/1253 , Y02E60/525 , Y02P70/56
摘要： Oxygen sensor ceramic of solid electrolyte of zirconia-yttria system comprises aggregates of cubic zirconia grains having an average grain size of 2-10 .mu.m and monoclinic zirconia grains having an average grain size of 0.2-1 .mu.m, the appregates of the cubic zirconia grains being in contact with one another, and the monoclinic zirconia grains being distributed as aggregates in clearances among the aggregates of the cubic zirconia grains, and has a high thermal shock resistance, a high mechanical strength and a resistivity equal to that of the ceramic consisting only of cubic zirconia grains. The oxygen sensor ceramic is prepared by mixing zirconia powder having a grain size of 0.1-0.5 .mu.m with 4-8% by mole of yttria powder having an average grain size of 0.5-5 .mu.m, on the basis of total mixture, and molding and firing the mixture at 1,400.degree.-1,550.degree. C.
摘要翻译：氧化锆 - 氧化钇系统的固体电解质的氧传感器陶瓷包括平均粒径为2-10μm的立方氧化锆颗粒和平均粒径为0.2-1μm的单斜晶氧化锆颗粒的聚集体，立方氧化锆颗粒彼此接触，并且单斜氧化锆颗粒作为立方氧化锆颗粒的聚集体之间的间隙分布作为聚集体，并且具有高耐热冲击性，高机械强度和等于陶瓷组成的电阻率只有立方氧化锆颗粒。氧传感器陶瓷通过将粒径为0.1-0.5μm的氧化锆粉末与平均粒径为0.5-5μm的4-8摩尔％氧化钇粉末以总混合物为基础来制备，以及在1400°-150℃下对混合物进行成型和烧成

10. 发明授权

US5234556A Polymeric metal oxide materials and their formation and use 失效
标题翻译：聚合物金属氧化物材料及其形成与使用
公开(公告)号：US5234556A
公开(公告)日：1993-08-10
申请号：US569720
申请日：1990-08-20
申请人： Tomoji Oishi , Ken Takahashi , Tetsuo Nakazawa , Shigeru Tanaka , Tadahiko Miyoshi
发明人： Tomoji Oishi , Ken Takahashi , Tetsuo Nakazawa , Shigeru Tanaka , Tadahiko Miyoshi
IPC分类号： C01B13/14 , B01J13/00 , B01J19/12 , C01B13/10 , C01B13/32 , C01B17/20 , C01B33/12 , C01G15/00 , C01G19/02 , C01G23/04 , C01G30/00 , C03C17/22 , C03C17/25 , C03C25/10 , C07F19/00 , F02B75/02 , G02B1/11 , G11B7/26 , H01B3/10 , H01G2/12 , H01G4/10 , H01G4/33 , H01L21/3105 , H01L21/316 , H01L21/3205 , H01L23/29 , H01L23/31 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , H05K1/03
CPC分类号： H01G2/12 , B01J13/0052 , C01B13/10 , C01B13/32 , C03C17/22 , C03C17/25 , C03C25/107 , C07F19/005 , H01G4/10 , H01L21/31058 , H01L21/316 , H01L21/3205 , H01L23/293 , H01L23/3135 , H05B33/10 , H05B33/22 , H05K1/0306 , C03C2217/21 , C03C2217/282 , C03C2218/113 , F02B2075/027 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01039 , H01L2924/01057 , H01L2924/01063 , H01L2924/01079 , H01L2924/10253 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , Y10S428/917 , Y10T428/1064 , Y10T428/1086 , Y10T428/24917 , Y10T428/24926 , Y10T428/265 , Y10T428/266 , Y10T428/2949 , Y10T428/31504
摘要： A method of treating a metal alkoxide solution to form metal oxide prepolymer molecules therein is characterized by irradiating the solution with light energy having a wavelength selected to break the metal-alkoxy group bond in said metal alkoxide, thereby to form the metal oxide prepolymer molecules in the solution. The prepolymer is converted into polymeric metal oxide gel. The stoichiometry of the oxide is high. A gel of carbon content below 4 atomic % can be achieved by the step of decarbonizing the gel, preferably using light to produce ozone.

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