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1. 发明授权

US06917088B2 Magneto-resistive devices 失效
标题翻译：磁阻器件
公开(公告)号：US06917088B2
公开(公告)日：2005-07-12
申请号：US10331664
申请日：2002-12-31
申请人： Hiromasa Takahashi , Jun Hayakawa , Susumu Soeya , Kenchi Ito
发明人： Hiromasa Takahashi , Jun Hayakawa , Susumu Soeya , Kenchi Ito
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/14 , H01L29/82 , H01L29/84 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3903 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.
摘要翻译：磁阻装置具有高的再现输出，并且适合用作CPP-GMR装置。磁阻装置具有形成在第一和第二磁性层之间的第一磁性层，第二磁性层和非磁性间隔物。第一磁性层包含导电电子属于第一能带的磁性材料，第二磁性层含有导电电子属于第二能带的磁性材料。第一和第二能带可归因于相同轨道，从而增加磁阻变化率和调整电阻。

2. 发明授权

US06876523B2 Magnetic head, and the magnetic read-write devices, and the magnetic memory with magnetic sensors 失效
标题翻译：磁头，磁读写装置，以及带磁性传感器的磁存储器
公开(公告)号：US06876523B2
公开(公告)日：2005-04-05
申请号：US10225150
申请日：2002-08-22
申请人： Hiromasa Takahashi , Susumu Soeya , Jun Hayakawa , Kenchi Ito
发明人： Hiromasa Takahashi , Susumu Soeya , Jun Hayakawa , Kenchi Ito
IPC分类号： G11C11/14 , G11B5/31 , G11B5/39 , G11C11/15 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetic head at high sensitivity and with enhanced output having a magnetoresistive element of high output and optimal for use in CPP-GMR, the magnetoresistive element comprising a pinned layer 606 containing a half-metal, a free layer 608 formed on one main surface of the pinned layer 606, a spacer 607 formed between the pinned layer 606 and the free layer 608, an anti-ferromagnetic layer 603 formed on the main surface of the pinned layer 606, a soft magnetic layer 604 formed between the pinned layer 606 and the anti-ferromagnetic layer 606, and a noble-metallic layer 605 formed between the pinned layer 606 and the soft magnetic layer.
摘要翻译：具有高灵敏度和增强输出的磁头具有高输出的磁阻元件，并且最适用于CPP-GMR，该磁阻元件包括一个钉扎层606，该固定层606包含半金属，形成在一个主表面上的自由层608 被钉扎层606，形成在被钉扎层606和自由层608之间的隔离物607，形成在被钉扎层606的主表面上的反铁磁层603，形成在钉扎层606和被钉扎层606之间的软磁性层604。反铁磁层606和形成在被钉扎层606和软磁性层之间的贵金属层605。

3. 发明授权

US07872906B2 Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus 有权
标题翻译：单向电流磁化反转磁阻元件和磁记录装置
公开(公告)号：US07872906B2
公开(公告)日：2011-01-18
申请号：US12337657
申请日：2008-12-18
申请人： Katsuya Miura , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
发明人： Katsuya Miura , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11C11/00
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
摘要翻译：通过使用单向写入电流进行写入的存储器。电流脉冲宽度不同的电流被施加到由具有固定磁化方向的第一铁磁性层，具有可变磁化方向的第二铁磁层构成的磁阻元件的膜厚度方向上的磁阻元件，具有可变磁化方向的第二铁磁层，位于第一铁磁层和第二铁磁层之间的第一非磁性层和位于第二铁磁层和第三铁磁层之间的第二非磁性层，以使第二铁磁层和第二铁磁层之间的第二非磁性层的磁化方向反转，铁磁层或第三铁磁层通过使用自旋转移扭矩。

4. 发明申请

US20090180312A1 Unidirectional-Current Magnetization-Reversal Magnetoresistance Element and Magnetic Recording Apparatus 有权
标题翻译：单向电流磁化反转磁阻元件和磁记录装置
公开(公告)号：US20090180312A1
公开(公告)日：2009-07-16
申请号：US12337657
申请日：2008-12-18
申请人： Katsuya MIURA , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
发明人： Katsuya MIURA , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11C11/02 , G11C11/14 , G11C11/416
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
摘要翻译：通过使用单向写入电流进行写入的存储器。电流脉冲宽度不同的电流被施加到由具有固定磁化方向的第一铁磁性层，具有可变磁化方向的第二铁磁层构成的磁阻元件的膜厚度方向上的磁阻元件，具有可变磁化方向的第二铁磁层，位于第一铁磁层和第二铁磁层之间的第一非磁性层和位于第二铁磁层和第三铁磁层之间的第二非磁性层，以使第二铁磁层和第二铁磁层之间的第二非磁性层的磁化方向反转，铁磁层或第三铁磁层通过使用自旋转移扭矩。

5. 发明授权

US06934133B2 Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head 失效
标题翻译：具有磁性半导体的三端子磁头和隧道磁阻膜以及包括磁头的磁记录装置
公开(公告)号：US06934133B2
公开(公告)日：2005-08-23
申请号：US10374089
申请日：2003-02-27
申请人： Jun Hayakawa , Kenchi Ito
发明人： Jun Hayakawa , Kenchi Ito
IPC分类号： G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909
摘要： A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.
摘要翻译：提供能够提供高输出和大输出电流的三端子磁阻头。将由磁性半导体，金属磁性多层膜和隧道磁阻元件构成的MIS结多层膜应用于三端子磁阻器件。

6. 发明申请

US20120012955A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20120012955A1
公开(公告)日：2012-01-19
申请号：US13147820
申请日：2009-03-04
申请人： Kenchi Ito , Jun Hayakawa , Katsuya Miura , Hiroyuki Yamamoto
发明人： Kenchi Ito , Jun Hayakawa , Katsuya Miura , Hiroyuki Yamamoto
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression Ms2(t/w)>|Jex|>(2kBTΔ)/S, in which kB is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and Ms are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and Jex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.
摘要翻译：提供了一种磁性随机存取存储器，其中施加了自旋扭矩磁化反转，磁性随机存取存储器在读取操作中是热稳定的，并且还能够减少布线操作中的电流。使用通过依次层叠固定层，非磁性阻挡层和记录层而形成的磁阻效应元件作为存储元件。记录层采用叠层铁磁结构。磁存储器满足表达式Ms2（t / w）> | Jex |>（2kBT＆Dgr）/ S，其中kB是玻尔兹曼常数，T是磁存储器的工作温度，S是与膜平行的区域磁阻效应元件的表面t和Ms分别是作为叠层铁氧体结构的构成部件的两个铁磁层之中具有较小膜厚度的铁磁层的膜厚度和饱和磁化强度，w是短边的长度的记录层，＆Dgr; 是磁存储器的热稳定性指数，Jex是作用在记录层的两个铁磁层之间的交换耦合能量。

7. 发明授权

US06917499B2 Magnetoresistive magnetic sensor and magnetic storage apparatus 失效
标题翻译：磁阻磁传感器和磁存储装置
公开(公告)号：US06917499B2
公开(公告)日：2005-07-12
申请号：US10677290
申请日：2003-10-03
申请人： Kenchi Ito , Jun Hayakawa
发明人： Kenchi Ito , Jun Hayakawa
IPC分类号： G01R33/09 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive head which has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head comprises a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected, and the soft magnetic free layer permits its magnetization to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of said ferromagnetic pinned layer and producing the magnetoresistive effect. The absolute value of the magnetoresistive effect has a peak at a temperature in the range from about 0° C. to 60° C. and for a bias voltage Vs (applied across said ferromagnetic pinned layer and said soft magnetic free layer) in the range from +0.2 to +0.8 V and from −0.8 to −0.2 V. The above characteristics may be achieved if the ferromagnetic pinned layer is formed from Fe3O4 or at least one oxide or compound of Cr and Mn; the non-magnetic insulating layer is formed from at least one oxide of Sr, Ti, and Ta; or the soft magnetic free layer is a CoFe alloy containing 70-100 atom % of Co, the ferromagnetic pinned layer is a CoFe alloy containing 0-70 atom % of Co, and the non-magnetic insulating layer is formed from at least one oxide of Sr, Ti, and Ta.
摘要翻译：在室温下具有高低电阻和高MR比的磁阻磁头，并且在施加偏置电压时S / N比不会急剧下降。磁阻头包括软磁性自由层，非磁性绝缘层和铁磁性钉扎层。铁磁性钉扎层可以具有相对于要检测的磁场固定的自旋阀层，并且软磁自由层允许其磁化响应于外部磁场而旋转，从而与所述铁磁性钉扎层的磁化和产生磁阻效应。磁阻效应的绝对值在约0℃至60℃的温度范围内具有峰值，并且对于偏置电压Vs（施加在所述铁磁性被钉扎层和所述软磁性自由层上），在该范围内从+0.2至+0.8V和-0.8至-0.2V。如果铁磁性钉扎层由Fe 3 O 4 O 4形成或在 Cr和Mn的至少一种氧化物或化合物; 非磁性绝缘层由Sr，Ti和Ta的至少一种氧化物形成; 或软磁性层为含有70〜100原子％Co的CoFe合金，铁磁性被钉扎层为含有0〜70原子％Co的CoFe合金，非磁性绝缘层由至少一种氧化物的Sr，Ti和Ta。

8. 发明授权

US06657830B2 Magnetoresistive magnetic sensor with tunnel effect and magnetic storage apparatus 有权
标题翻译：具有隧道效应和磁存储装置的磁阻磁传感器
公开(公告)号：US06657830B2
公开(公告)日：2003-12-02
申请号：US09911541
申请日：2001-07-25
申请人： Kenchi Ito , Jun Hayakawa
发明人： Kenchi Ito , Jun Hayakawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive head has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head includes a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected. The magnetization of the soft magnetic free layer is permitted to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of the ferromagnetic pinned layer and producing a magnetoresistive effect whose absolute value has a peak at a temperature range of 0-60° C. with a bias voltage Vs (applied across the ferromagnetic pinned layer and the soft magnetic free layer) in ranges of +0.2 to +0.8 V and −0.8 to −0.2 V.
摘要翻译：磁阻头在室温下具有高低电阻和高MR比，并且在施加偏压时不会急剧下降的S / N比。磁阻磁头包括软磁性自由层，非磁性绝缘层和铁磁性固定层。铁磁性钉扎层可以具有相对于待检测的磁场固定的自旋阀层。允许软磁自由层的磁化响应于外部磁场旋转，从而改变与铁磁性钉扎层的磁化的相对角度，并产生在0的温度范围内其绝对值具有峰值的磁阻效应在+0.2至+0.8V和-0.8至-0.2V的范围内具有偏置电压Vs（施加在铁磁性被钉扎层和软磁性自由层上）的-60℃。

9. 发明授权

US07755932B2 Spin torque magnetic memory and offset magnetic field correcting method thereof 失效
标题翻译：自旋扭矩磁存储器及其偏移磁场校正方法
公开(公告)号：US07755932B2
公开(公告)日：2010-07-13
申请号：US12339167
申请日：2008-12-19
申请人： Kenchi Ito , Jun Hayakawa , Katsuya Miura
发明人： Kenchi Ito , Jun Hayakawa , Katsuya Miura
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , Y10S977/935
摘要： An object of the present invention corrects fluctuation of a writing current between cells in a magnetic random access memory using spin torque magnetization reversal. The present invention includes a magneto-resistive effect element that is disposed between a bit line and a word line, a first variable resistance element that is connected to one end of the bit line, a second variable resistance element that is connected to the other end of the bit line, a first voltage applying unit that applies voltage to the first variable resistance element, and a second voltage applying unit that applies voltage to the second variable resistance element, when a writing operation is performed, an offset magnetic field is applied to a free layer of the magneto-resistive effect element by flowing a variable current between the first voltage applying unit and the second voltage applying unit based on a predetermined resistance value.
摘要翻译：本发明的目的是使用自旋扭矩磁化反转校正磁性随机存取存储器中的单元之间的写入电流的波动。本发明包括设置在位线和字线之间的磁阻效应元件，连接到位线的一端的第一可变电阻元件，与另一端连接的第二可变电阻元件位线的第一电压施加单元，对第一可变电阻元件施加电压的第一施加电压单元和向第二可变电阻元件施加电压的第二电压施加单元，当执行写入操作时，将偏移磁场施加到通过基于预定的电阻值在第一电压施加单元和第二电压施加单元之间流动可变电流来产生磁阻效应元件的自由层。

10. 发明申请

US20050221512A1 Magnetic recording medium and magnetic memory apparatus 有权
公开(公告)号：US20050221512A1
公开(公告)日：2005-10-06
申请号：US11134284
申请日：2005-05-23
申请人： Kenchi Ito , Jun Hayakawa
发明人： Kenchi Ito , Jun Hayakawa
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/33
CPC分类号： G11C11/15 , Y10S977/888 , Y10S977/933
摘要： Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a cantilever array having a plurality of cantilevers each having a conductive chip at its distal end. This provides a magnetic solid memory apparatus that has a large memory capacity and a super fast transfer rate, the merits of a hard disk apparatus, and a nanostructure and low power consumption, which are the merits of a semiconductor memory.

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