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1. 发明授权

US08957486B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08957486B2
公开(公告)日：2015-02-17
申请号：US13147820
申请日：2009-03-04
申请人： Kenchi Ito , Jun Hayakawa , Katsuya Miura , Hiroyuki Yamamoto
发明人： Kenchi Ito , Jun Hayakawa , Katsuya Miura , Hiroyuki Yamamoto
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression Ms2(t/w)>|Jex|>(2kBTΔ)/S, in which kB is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and Ms are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and Jex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.
摘要翻译：提供了一种磁性随机存取存储器，其中施加了自旋扭矩磁化反转，磁性随机存取存储器在读取操作中是热稳定的，并且还能够减少布线操作中的电流。使用通过依次层叠固定层，非磁性阻挡层和记录层而形成的磁阻效应元件作为存储元件。记录层采用叠层铁磁结构。磁存储器满足表达式Ms2（t / w）> | Jex |>（2kBT＆Dgr）/ S，其中kB是玻尔兹曼常数，T是磁存储器的工作温度，S是与膜平行的区域磁阻效应元件的表面t和Ms分别是作为叠层铁氧体结构的构成部件的两个铁磁层之中具有较小膜厚度的铁磁层的膜厚度和饱和磁化强度，w是短边的长度的记录层，＆Dgr; 是磁存储器的热稳定性指数，Jex是作用在记录层的两个铁磁层之间的交换耦合能量。

2. 发明申请

US20090161414A1 Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Method Thereof 失效
标题翻译：自旋扭矩磁记忆和偏移磁场校正方法
公开(公告)号：US20090161414A1
公开(公告)日：2009-06-25
申请号：US12339167
申请日：2008-12-19
申请人： Kenchi ITO , Jun Hayakawa , Katsuya Miura
发明人： Kenchi ITO , Jun Hayakawa , Katsuya Miura
IPC分类号： G11C11/02 , G11C11/14 , G11C11/416
CPC分类号： G11C11/1675 , G11C11/161 , Y10S977/935
摘要： An object of the present invention corrects fluctuation of a writing current between cells in a magnetic random access memory using spin torque magnetization reversal. The present invention includes a magneto-resistive effect element that is disposed between a bit line and a word line, a first variable resistance element that is connected to one end of the bit line, a second variable resistance element that is connected to the other end of the bit line, a first voltage applying unit that applies voltage to the first variable resistance element, and a second voltage applying unit that applies voltage to the second variable resistance element, when a writing operation is performed, an offset magnetic field is applied to a free layer of the magneto-resistive effect element by flowing a variable current between the first voltage applying unit and the second voltage applying unit based on a predetermined resistance value.
摘要翻译：本发明的目的是使用自旋扭矩磁化反转校正磁性随机存取存储器中的单元之间的写入电流的波动。本发明包括设置在位线和字线之间的磁阻效应元件，连接到位线的一端的第一可变电阻元件，与另一端连接的第二可变电阻元件位线的第一电压施加单元，对第一可变电阻元件施加电压的第一施加电压单元和向第二可变电阻元件施加电压的第二电压施加单元，当执行写入操作时，将偏移磁场施加到通过基于预定的电阻值在第一电压施加单元和第二电压施加单元之间流动可变电流来产生磁阻效应元件的自由层。

3. 发明授权

US07755932B2 Spin torque magnetic memory and offset magnetic field correcting method thereof 失效
标题翻译：自旋扭矩磁存储器及其偏移磁场校正方法
公开(公告)号：US07755932B2
公开(公告)日：2010-07-13
申请号：US12339167
申请日：2008-12-19
申请人： Kenchi Ito , Jun Hayakawa , Katsuya Miura
发明人： Kenchi Ito , Jun Hayakawa , Katsuya Miura
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , Y10S977/935
摘要： An object of the present invention corrects fluctuation of a writing current between cells in a magnetic random access memory using spin torque magnetization reversal. The present invention includes a magneto-resistive effect element that is disposed between a bit line and a word line, a first variable resistance element that is connected to one end of the bit line, a second variable resistance element that is connected to the other end of the bit line, a first voltage applying unit that applies voltage to the first variable resistance element, and a second voltage applying unit that applies voltage to the second variable resistance element, when a writing operation is performed, an offset magnetic field is applied to a free layer of the magneto-resistive effect element by flowing a variable current between the first voltage applying unit and the second voltage applying unit based on a predetermined resistance value.
摘要翻译：本发明的目的是使用自旋扭矩磁化反转校正磁性随机存取存储器中的单元之间的写入电流的波动。本发明包括设置在位线和字线之间的磁阻效应元件，连接到位线的一端的第一可变电阻元件，与另一端连接的第二可变电阻元件位线的第一电压施加单元，对第一可变电阻元件施加电压的第一施加电压单元和向第二可变电阻元件施加电压的第二电压施加单元，当执行写入操作时，将偏移磁场施加到通过基于预定的电阻值在第一电压施加单元和第二电压施加单元之间流动可变电流来产生磁阻效应元件的自由层。

4. 发明申请

US20120012955A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20120012955A1
公开(公告)日：2012-01-19
申请号：US13147820
申请日：2009-03-04
申请人： Kenchi Ito , Jun Hayakawa , Katsuya Miura , Hiroyuki Yamamoto
发明人： Kenchi Ito , Jun Hayakawa , Katsuya Miura , Hiroyuki Yamamoto
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression Ms2(t/w)>|Jex|>(2kBTΔ)/S, in which kB is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and Ms are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and Jex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.
摘要翻译：提供了一种磁性随机存取存储器，其中施加了自旋扭矩磁化反转，磁性随机存取存储器在读取操作中是热稳定的，并且还能够减少布线操作中的电流。使用通过依次层叠固定层，非磁性阻挡层和记录层而形成的磁阻效应元件作为存储元件。记录层采用叠层铁磁结构。磁存储器满足表达式Ms2（t / w）> | Jex |>（2kBT＆Dgr）/ S，其中kB是玻尔兹曼常数，T是磁存储器的工作温度，S是与膜平行的区域磁阻效应元件的表面t和Ms分别是作为叠层铁氧体结构的构成部件的两个铁磁层之中具有较小膜厚度的铁磁层的膜厚度和饱和磁化强度，w是短边的长度的记录层，＆Dgr; 是磁存储器的热稳定性指数，Jex是作用在记录层的两个铁磁层之间的交换耦合能量。

5. 发明授权

US07872906B2 Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus 有权
标题翻译：单向电流磁化反转磁阻元件和磁记录装置
公开(公告)号：US07872906B2
公开(公告)日：2011-01-18
申请号：US12337657
申请日：2008-12-18
申请人： Katsuya Miura , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
发明人： Katsuya Miura , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11C11/00
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
摘要翻译：通过使用单向写入电流进行写入的存储器。电流脉冲宽度不同的电流被施加到由具有固定磁化方向的第一铁磁性层，具有可变磁化方向的第二铁磁层构成的磁阻元件的膜厚度方向上的磁阻元件，具有可变磁化方向的第二铁磁层，位于第一铁磁层和第二铁磁层之间的第一非磁性层和位于第二铁磁层和第三铁磁层之间的第二非磁性层，以使第二铁磁层和第二铁磁层之间的第二非磁性层的磁化方向反转，铁磁层或第三铁磁层通过使用自旋转移扭矩。

6. 发明授权

US09153306B2 Tunnel magnetoresistive effect element and random access memory using same 有权
标题翻译：隧道磁阻效应元件和使用其的随机存取存储器
公开(公告)号：US09153306B2
公开(公告)日：2015-10-06
申请号：US14356739
申请日：2011-11-08
申请人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Yosuke Kurosaki , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Yosuke Kurosaki , Katsuya Miura
IPC分类号： G11C11/16 , H01L43/10 , H01L43/08 , H01L27/22
CPC分类号： G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.
摘要翻译：提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加整体上被抑制，能够进行稳定的动作。在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

7. 发明授权

US09070457B2 Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory 有权
标题翻译：具有垂直磁化和磁性随机存取存储器的磁隧道结
公开(公告)号：US09070457B2
公开(公告)日：2015-06-30
申请号：US13480303
申请日：2012-05-24
申请人： Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi , Hideo Sato , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi , Hideo Sato , Katsuya Miura
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01F10/32 , H01L27/22
CPC分类号： G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/1114
摘要： In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.
摘要翻译：在使用具有垂直磁各向异性的铁磁材料制造的磁性隧道结中，根据存储的信息，由于平行状态和反平行磁化状态之间的热稳定性不平衡而导致的记录保留时间的差异，其对应于位信息得到缓解。构成磁性隧道结的参考层和记录层的面积彼此不同，以便校正与存储的信息相对应的记录保留时间的差异。

8. 发明授权

US08917541B2 Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US08917541B2
公开(公告)日：2014-12-23
申请号：US13701846
申请日：2011-05-31
申请人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L43/12 , H01L43/02 , G11B5/31 , H01L27/22
CPC分类号： H01L43/08 , G01R33/098 , G11B5/31 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
摘要翻译：提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

9. 发明申请

US20120320666A1 Magnetoresistive Element and Magnetic Memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US20120320666A1
公开(公告)日：2012-12-20
申请号：US13578866
申请日：2011-02-14
申请人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Katsuya Miura , Hiroyuki Yamamoto
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Katsuya Miura , Hiroyuki Yamamoto
IPC分类号： G11C11/15 , G11B5/673
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/10 , H01L43/12
摘要： There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.
摘要翻译：提供了一种磁阻元件，其磁化方向在垂直于膜表面的方向上是稳定的并且其磁阻比被控制，以及使用这种磁阻元件的磁存储器。通过使形成磁阻元件的铁磁层的材料包含含有至少一种类型的3d过渡金属或Heusler合金的铁磁材料，以控制磁阻比，并且通过控制原子层上的铁磁层的厚度磁化方向从膜表面垂直于膜表面进行平面切换。

10. 发明申请

US20140340961A1 TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME 有权
标题翻译：隧道磁阻效应元件和随机存取存储器
公开(公告)号：US20140340961A1
公开(公告)日：2014-11-20
申请号：US14356739
申请日：2011-11-08
申请人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Yosuke Kurosaki , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Yosuke Kurosaki , Katsuya Miura
IPC分类号： G11C11/16 , H01L43/10 , H01L27/22
CPC分类号： G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.
摘要翻译：提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加整体上被抑制，能够进行稳定的动作。在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

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