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1. 发明申请

US20090236786A1 HAND HAVING ROCKING MECHANISM AND SUBSTRATE DELIVERING DEVICE HAVING THE SAME 有权
标题翻译：具有摇摆机构和底板输送装置的手柄
公开(公告)号：US20090236786A1
公开(公告)日：2009-09-24
申请号：US12407826
申请日：2009-03-20
申请人： Hiroki SANEMASA , Hideo YAMAMOTO , Naoomi TORII , Takahiro OGAWA , Seiji KATSUOKA , Hidetaka NAKAO , Natsuki MAKINO
发明人： Hiroki SANEMASA , Hideo YAMAMOTO , Naoomi TORII , Takahiro OGAWA , Seiji KATSUOKA , Hidetaka NAKAO , Natsuki MAKINO
IPC分类号： H01L21/677 , H01L21/68
CPC分类号： H01L21/68707 , Y10S414/141
摘要： A hand 1 is constituted by a hand base 4 serving as a base portion, a rocking hand 3 disposed to be superposed on the hand base 4 and serving to support a substrate 2, and a rocking mechanism 5 provided between the hand base 4 and the rocking hand 3 and serving to support the rocking hand 3 to be tiltable and movable in parallel with respect to the hand base 4.
摘要翻译：手1由用作基部的手持基座4，摆放在手基座4上并用于支撑基板2的摆动手3构成，摆动机构5设置在手持基座4和手柄基座4之间。摆动手3并且用于支撑摇摆手3以相对于手基座4平行地倾斜和移动。

2. 发明申请

US20120043604A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20120043604A1
公开(公告)日：2012-02-23
申请号：US13317781
申请日：2011-10-28
申请人： Yoshimitsu MURASE , Kenya KOBAYASHI , Hideo YAMAMOTO , Atsushi KANEKO
发明人： Yoshimitsu MURASE , Kenya KOBAYASHI , Hideo YAMAMOTO , Atsushi KANEKO
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/66734
摘要： A semiconductor device includes a semiconductor layer, a first diffused region formed in the semiconductor layer, a second diffused region formed in the first diffused region, a trench formed in the semiconductor layer, a gate electrode disposed in the trench, a top surface of the gate electrode being lower than a top surface of the semiconductor layer and sagging downwards in a center thereof, a non-doped silicate glass film disposed in the trench and formed over the gate electrode, a top surface of the silicate glass film sagging downwards in a center thereof, an oxide film disposed in the trench and formed over the non-doped silicate glass film, a top surface of the oxide film sagging downwards in a center, and a source electrode formed over the semiconductor layer so that the source electrode contacts the first and second diffusion regions, and the oxide film at the top surface thereof.
摘要翻译：半导体器件包括半导体层，形成在半导体层中的第一扩散区域，形成在第一扩散区域中的第二扩散区域，形成在半导体层中的沟槽，设置在沟槽中的栅极电极，栅电极低于半导体层的顶表面并且在其中心向下流动，设置在沟槽中并形成在栅电极上的未掺杂硅酸盐玻璃膜，硅酸盐玻璃膜的顶表面向下垂下中心，设置在沟槽中并形成在非掺杂硅酸盐玻璃膜上的氧化物膜，氧化膜在中心向下垂的顶表面和形成在半导体层上的源电极，使得源电极接触第一和第二扩散区，以及其顶表面处的氧化物膜。

3. 发明申请

US20120295173A1 FUEL CELL POWER GENERATION SYSTEM 有权
标题翻译：燃料电池发电系统
公开(公告)号：US20120295173A1
公开(公告)日：2012-11-22
申请号：US13562437
申请日：2012-07-31
申请人： Hideo YAMAMOTO
发明人： Hideo YAMAMOTO
IPC分类号： H01M8/06
CPC分类号： H01M8/247 , H01M8/04559 , H01M8/04589 , H01M8/04619 , H01M8/04776 , H01M8/0612 , H01M8/0618 , H01M8/2475 , H01M2008/1095 , H01M2250/10 , H01M2250/405 , Y02B90/14 , Y02B90/16
摘要： There is provided a fuel cell power generation system in which power loss in a power line electrically connecting a stack and a power conversion circuit, thereby attaining high power generation efficiency. A reformer and the stack are disposed in a main body package. Stack output terminals 31 are provided in both ends in a stacking direction of the stack. A power conversion circuit is disposed in the main body package and arranged in the proximity to the stack. Power conversion circuit input terminals are provided on the power conversion circuit and arrayed in a direction parallel to the stacking direction of the stack. Stack output lines electrically connect the stack output terminals and the power conversion circuit input terminals.
摘要翻译：提供一种燃料电池发电系统，其中电力线路中的电力线路中的电力损失电连接堆叠和电力转换电路，从而实现高的发电效率。重整器和堆叠件设置在主体包装中。堆叠输出端子31沿堆叠的层叠方向设置在两端。电源转换电路设置在主体封装中并且布置在堆叠附近。功率转换电路输入端子设置在功率转换电路上，并且沿平行堆叠方向的方向排列。堆叠输出线将堆叠输出端子和电源转换电路输入端子电连接。

4. 发明申请

US20100273304A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100273304A1
公开(公告)日：2010-10-28
申请号：US12760152
申请日：2010-04-14
申请人： Hideo YAMAMOTO , Kei TAKEHARA
发明人： Hideo YAMAMOTO , Kei TAKEHARA
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/42368 , H01L29/66727 , H01L29/66734
摘要： A method of fabricating a semiconductor device according to the present invention includes forming a first trench and a second trench by etching the first trench further, in an epitaxial layer formed over a substrate, extending a width of the second trench, forming an oxidize film by oxidizing the extended second trench, and filling an electrode material in the first trench and the second trench including the oxidized film formed therein. The method of fabricating a semiconductor device according to the present invention enables to fabricate a semiconductor device that improves the withstand voltage between a drain and a source and reduce the on-resistance.
摘要翻译：根据本发明的制造半导体器件的方法包括通过在形成在衬底上的外延层中进一步蚀刻第一沟槽来形成第一沟槽和第二沟槽，延伸第二沟槽的宽度，通过第二沟槽的宽度形成氧化膜氧化延伸的第二沟槽，并且填充第一沟槽中的电极材料和包括其中形成的氧化膜的第二沟槽。根据本发明的制造半导体器件的方法能够制造提高漏极和源极之间的耐受电压并降低导通电阻的半导体器件。

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