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1. 发明授权

US07231079B2 Method and system for inspecting electronic circuit pattern 有权
标题翻译：检查电路图的方法和系统
公开(公告)号：US07231079B2
公开(公告)日：2007-06-12
申请号：US10050519
申请日：2002-01-18
申请人： Hirohito Okuda , Yuji Takagi , Masahiro Watanabe , Shunji Maeda , Minori Noguchi , Yoshimasa Ooshima , Makoto Ono
发明人： Hirohito Okuda , Yuji Takagi , Masahiro Watanabe , Shunji Maeda , Minori Noguchi , Yoshimasa Ooshima , Makoto Ono
IPC分类号： G06K9/00
CPC分类号： G01N21/956 , G01N21/9501 , G01N2021/8854 , G01N2021/8861
摘要： For the purpose of reducing a false report and shortening inspection time, an area to be inspected is locally inspected under optimum inspection conditions. In order to avoid the number of detected defects from increasing explosively, and thereby to facilitate control of a critical defect, general-purpose layout data, which is used for producing a mask of a semiconductor wafer, is accumulated in a design information server 2. With reference to the layout data, an area to be inspected, which is inspected by a pattern inspecting apparatus 1, is divided into partial inspection areas including a cell portion and a non-cell portion. Inspection parameters are set for each of the partial inspection areas. In addition, the defect reviewing apparatus 8 obtains an inspection result of the pattern inspecting apparatus 1. When obtaining a defect image, the defect reviewing apparatus 8 identifies a position, where the defect occurred, from among a cell portion, a non-cell portion, a pattern dense portion, and the like according to layout data. Moreover, the defect reviewing apparatus 8 sets inspection parameters, such as pickup magnification of this defect, in response to a result of the identification to set a control criterion of criticality.
摘要翻译：为了减少虚假报告和缩短检查时间，在最佳检查条件下对被检查区域进行局部检查。为了避免检测到的缺陷数量爆炸性增加，从而有利于控制关键缺陷，用于制造半导体晶片的掩模的通用布局数据被累积在设计信息服务器2中。参照布局数据，由图案检查装置1检查的被检查区域被划分为包括单元部分和非单元部分的局部检查区域。为每个部分检查区域设置检查参数。另外，缺陷检查装置8获得图案检查装置1的检查结果。当获得缺陷图像时，缺陷检查装置8根据布局数据从单元部分，非单元部分，图案密集部分等中识别发生缺陷的位置。此外，缺陷检查装置8响应于识别的结果设置检查参数，例如该缺陷的拾取倍率，以设置关键性的控制标准。

2. 发明授权

US06841403B2 Method for manufacturing semiconductor devices and method and its apparatus for processing detected defect data 有权
标题翻译：半导体器件的制造方法及其检测缺陷数据的处理方法及其装置
公开(公告)号：US06841403B2
公开(公告)日：2005-01-11
申请号：US10348747
申请日：2003-01-21
申请人： Maki Tanaka , Shunji Maeda , Minori Noguchi , Takafumi Okabe , Yuji Takagi , Chie Shishido
发明人： Maki Tanaka , Shunji Maeda , Minori Noguchi , Takafumi Okabe , Yuji Takagi , Chie Shishido
IPC分类号： H01L21/00 , H01L21/66 , G06F19/00
CPC分类号： H01L21/67276 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.
摘要翻译：本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及实现恒定和高收益。本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

3. 发明授权

US06797526B2 Method for manufacturing semiconductor devices and method and its apparatus for processing detected defect data 有权
标题翻译：半导体器件的制造方法及其检测缺陷数据的处理方法及其装置
公开(公告)号：US06797526B2
公开(公告)日：2004-09-28
申请号：US10232871
申请日：2002-08-30
申请人： Maki Tanaka , Shunji Maeda , Minori Noguchi , Takafumi Okabe , Yuji Takagi , Chie Shishido
发明人： Maki Tanaka , Shunji Maeda , Minori Noguchi , Takafumi Okabe , Yuji Takagi , Chie Shishido
IPC分类号： H01L2100
CPC分类号： H01L21/67276 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.
摘要翻译：本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及实现恒定和高收益。本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

4. 发明授权

US06657221B2 Image classification method, observation method, and apparatus thereof with different stage moving velocities 失效
标题翻译：具有不同阶段移动速度的图像分类方法，观察方法及装置
公开(公告)号：US06657221B2
公开(公告)日：2003-12-02
申请号：US09988436
申请日：2001-11-20
申请人： Ryo Nakagaki , Yuji Takagi , Takashi Hiroi , Masahiro Watanabe , Minori Noguchi , Kazuo Aoki
发明人： Ryo Nakagaki , Yuji Takagi , Takashi Hiroi , Masahiro Watanabe , Minori Noguchi , Kazuo Aoki
IPC分类号： G01N2186
CPC分类号： G01N21/9501
摘要： There are provided an automatic image collection apparatus and method capable of acquiring and automatically classifying fast an image of a defect part caused in a semiconductor wafer production process detected by a defect inspection unit. The image collection apparatus for automatically imaging and collecting images of a plurality of observed parts on a semiconductor wafer is provided with a scheduling portion for deciding the imaging order of the defects and stage moving velocities based on the positional relation of the plurality of observed parts on the wafer and a control portion for feed backing the stage movement amount to the beam deflection amount, thereby imaging and collecting images via an optimal route while moving the stage.
摘要翻译：提供一种自动图像采集装置和方法，其能够快速地获取由缺陷检查单元检测的半导体晶片制造过程中引起的缺陷部分的图像的自动分类。用于在半导体晶片上自动成像和收集多个观察部分的图像的图像采集装置设置有调度部分，用于基于多个观察部分的位置关系来确定缺陷和阶段移动速度的成像顺序晶片和用于馈送背景的控制部分，舞台移动量达到光束偏转量，从而在移动舞台的同时通过最佳路线对图像进行成像和收集。

5. 发明申请

US20120062890A1 Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device 审中-公开
标题翻译：检测颗粒的方法及其装置或半导体器件的缺陷
公开(公告)号：US20120062890A1
公开(公告)日：2012-03-15
申请号：US13298079
申请日：2011-11-16
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N15/02
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

6. 发明申请

US20060091332A1 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
公开(公告)号：US20060091332A1
公开(公告)日：2006-05-04
申请号：US11302847
申请日：2005-12-13
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/86
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

7. 发明授权

US06797975B2 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
标题翻译：用于检查半导体器件的颗粒或缺陷的方法及其装置
公开(公告)号：US06797975B2
公开(公告)日：2004-09-28
申请号：US09931997
申请日：2001-08-17
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N2188
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

8. 发明授权

US07511806B2 Apparatus and method for inspecting defects 失效
标题翻译：用于检查缺陷的装置和方法
公开(公告)号：US07511806B2
公开(公告)日：2009-03-31
申请号：US11931120
申请日：2007-10-31
申请人： Akira Hamamatsu , Minori Noguchi , Yoshimasa Ooshima , Hidetoshi Nishiyama , Tetsuya Watanabe
发明人： Akira Hamamatsu , Minori Noguchi , Yoshimasa Ooshima , Hidetoshi Nishiyama , Tetsuya Watanabe
IPC分类号： G01N21/00
CPC分类号： G01N21/9501
摘要： A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concave-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要翻译：一种缺陷检查装置，包括将检测到的光转换成对应于由高角度照明光学系统照射的光的第一信号和/或对应于由低角度照明光学系统照射的光的第二信号的装置; 以及分类单元，其利用所述第一信号和所述第二信号并对所检查的物体进行缺陷分类，其中通过基于凹凸水平（b / a）改变所述缺陷尺寸的校正系数来估计缺陷尺寸，其中缺陷的凹凸级（b / a）由缺陷的第一方向的尺寸b与缺陷的第二方向的尺寸a的比值表示，其中第二方向与第第一个方向。

9. 发明授权

US06998630B2 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
公开(公告)号：US06998630B2
公开(公告)日：2006-02-14
申请号：US10933977
申请日：2004-09-03
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/88
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

10. 发明申请

US20050024633A1 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
标题翻译：用于检查半导体器件的颗粒或缺陷的方法及其装置
公开(公告)号：US20050024633A1
公开(公告)日：2005-02-03
申请号：US10933977
申请日：2004-09-03
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/88 , G01N21/94
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

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