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1. 发明授权

US5316960A C-MOS thin film transistor device manufacturing method 失效
标题翻译： C-MOS薄膜晶体管器件的制造方法
公开(公告)号：US5316960A
公开(公告)日：1994-05-31
申请号：US78409
申请日：1993-06-17
申请人： Hirofumi Watanabe , Noriyuki Terao
发明人： Hirofumi Watanabe , Noriyuki Terao
IPC分类号： H01L21/84 , H01L21/265
CPC分类号： H01L21/84 , Y10S148/137 , Y10S148/15
摘要： A method for manufacturing a C-MOS thin film transistor device has the steps of implanting the n-type impurity only in the upper layer portion of the source-drain section of the n-channel transistor by controlling implantation energy of the n-type impurity; implanting the p-type impurity in the source-drain section and the gate electrode of the p-channel transistor, and the source-drain section and the gate electrode of the n-channel transistor by controlling implantation energy of the p-type impurity; and activating the implanted n-type and p-type impurities in the source-drain section of the n-channel transistor, and activating the implanted p-type impurity in the source-drain section and the gate electrode of the p-channel transistor and gate electrode of the n-channel transistor. The n-type and the p-type may be respectively changed to the p-type and the n-type in the above construction.
摘要翻译：用于制造C-MOS薄膜晶体管器件的方法具有以下步骤：通过控制n型杂质的注入能量将n型杂质仅植入在n沟道晶体管的源极 - 漏极部分的上层部分中 ; 通过控制p型杂质的注入能量，将p型杂质注入到p沟道晶体管的源极 - 漏极部分和栅极电极以及n沟道晶体管的源极 - 漏极部分和栅极电极中; 以及激活n沟道晶体管的源极 - 漏极部分中注入的n型和p型杂质，以及激活p沟道晶体管的源 - 漏部分和栅电极中注入的p型杂质，以及 n沟道晶体管的栅电极。在上述结构中，n型和p型可以分别变为p型和n型。

2. 发明授权

US09749566B2 Imaging device and electronic device 有权
公开(公告)号：US09749566B2
公开(公告)日：2017-08-29
申请号：US14641683
申请日：2015-03-09
申请人： Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Aisu , Yasukazu Nakatani , Katsuyuki Sakurano
发明人： Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Aisu , Yasukazu Nakatani , Katsuyuki Sakurano
IPC分类号： H04N5/374 , H04N5/355
CPC分类号： H04N5/374 , H04N5/35527
摘要： An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

3. 发明授权

US09478568B2 Photoelectric conversion device having two switch elements 有权
标题翻译：具有两个开关元件的光电转换装置
公开(公告)号：US09478568B2
公开(公告)日：2016-10-25
申请号：US14305821
申请日：2014-06-16
申请人： Katsuhiko Aisu , Takaaki Negoro , Kazuhiro Yoneda , Katsuyuki Sakurano , Hirofumi Watanabe
发明人： Katsuhiko Aisu , Takaaki Negoro , Kazuhiro Yoneda , Katsuyuki Sakurano , Hirofumi Watanabe
IPC分类号： H01L27/144 , H01L27/146 , H04N5/359 , H04N5/374 , H04N5/3745
CPC分类号： H01L27/144 , H01L27/14609 , H04N5/359 , H04N5/374 , H04N5/3745
摘要： A photoelectric conversion device includes a first output line, a second output line; and a photoelectric conversion cell. The photoelectric conversion cell further includes, a photoelectric conversion element configured to generate an output current corresponding to an intensity of incident light, a first switch element configured to transmit the first output current to the first output line according to a first control signal, and a second switch element configured to transmit the second output current to second output line according to a second control signal. As a result, the photoelectric conversion device can be provided to generate rapidly the image data with wide dynamic range without the need for complex control outside of the photoelectric conversion device.
摘要翻译：光电转换装置包括第一输出线，第二输出线，和光电转换单元。光电转换单元还包括：光电转换元件，被配置为产生与入射光强度相对应的输出电流;第一开关元件，被配置为根据第一控制信号将第一输出电流传输到第一输出线;以及第二开关元件，被配置为根据第二控制信号将第二输出电流传输到第二输出线。结果，可以提供光电转换装置以快速生成具有宽动态范围的图像数据，而不需要光电转换装置外部的复杂控制。

4. 发明申请

US20160195431A1 PHOTOELECTRIC CONVERSION DEVICE, IMAGE GENERATION DEVICE, AND METHOD OF CORRECTING OUTPUT OF PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换装置，图像生成装置和校正光电转换装置的输出的方法
公开(公告)号：US20160195431A1
公开(公告)日：2016-07-07
申请号：US14978172
申请日：2015-12-22
申请人： Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
发明人： Katsuhiko Aisu , Hirofumi Watanabe , Takaaki Negoro , Yoshinori Ueda , Yasukazu Nakatani , Kazuhiro Yoneda , Katsuyuki Sakurano
IPC分类号： G01J1/44
CPC分类号： G01J1/44 , G01J2001/444 , G01J2001/4473 , H04N5/361 , H04N5/3655 , H04N5/378
摘要： A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.
摘要翻译：光电转换装置包括具有光电晶体管的像素单元，具有与光电晶体管的温度特性相同的具有固定电气状态的参考晶体管的参考晶体管，转换模拟输出的模数转换器像素单元转换为数字输出;校正量计算单元，其基于所述参考单元的输出和参考值计算所述模数转换器的数字输出的校正量，以及校正单元，基于校正量的模数转换器的输出。

5. 发明授权

US09169676B2 Vehicular latch device 有权
标题翻译：车辆闩锁装置
公开(公告)号：US09169676B2
公开(公告)日：2015-10-27
申请号：US13353916
申请日：2012-01-19
申请人： Hirofumi Watanabe , Shintaro Okawa
发明人： Hirofumi Watanabe , Shintaro Okawa
IPC分类号： E05C3/06 , E05B85/02 , E05B77/34 , E05B77/38 , E05B81/14 , E05B81/36 , E05B81/66
CPC分类号： E05B85/02 , E05B77/34 , E05B77/38 , E05B81/14 , E05B81/36 , E05B81/66 , Y10T292/1075
摘要： A latch device for vehicle LA provided on a door D of a vehicle, including: a latch 20, which meshes with a striker S; a ratchet 30, which regulates rotation of the latch 20; a detecting sensor 200 including a body 201 and terminals 202a and 202b exposed from the body 201, which detects operation of the latch 20 or the ratchet 30; and a main body 40 in which the detecting sensor 200 is arranged, wherein the main body 40 includes a discharging portion 417 formed on a position corresponding to the terminals 202a and 202b of the latch detecting sensor 200, and the terminals 202a and 202b of the detecting sensor 200 are arranged on an upper side of a vehicle than the discharging portion 417 in a state in which the door D is closed.
摘要翻译：一种设置在车辆的门D上的用于车辆LA的闩锁装置，包括：与撞针S啮合的闩锁20; 棘轮30，其调节闩锁20的旋转; 检测传感器200，其包括主体201和从主体201露出的端子202a和202b，其检测闩锁20或棘轮30的操作; 以及设置有检测传感器200的主体40，其中主体40包括形成在与闩锁检测传感器200的端子202a和202b相对应的位置处的排出部分417，以及在门D关闭的状态下，检测传感器200配置在车辆的上侧，而不是排出部417。

6. 发明申请

US20150171129A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20150171129A1
公开(公告)日：2015-06-18
申请号：US14560037
申请日：2014-12-04
申请人： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
发明人： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
IPC分类号： H01L27/146 , H01L31/113
CPC分类号： H01L31/1136 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
摘要： A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.
摘要翻译：公开了半导体器件和制造半导体器件的方法。该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

7. 发明授权

US08785777B2 Actuator control device, and method of manufacturing circuit device in actuator control device 有权
标题翻译：执行器控制装置，以及在执行器控制装置中制造电路装置的方法
公开(公告)号：US08785777B2
公开(公告)日：2014-07-22
申请号：US12976001
申请日：2010-12-22
申请人： Daisuke Yasukawa , Hirofumi Watanabe , Kazuhiko Nakano , Kenji Kikuchi
发明人： Daisuke Yasukawa , Hirofumi Watanabe , Kazuhiko Nakano , Kenji Kikuchi
IPC分类号： H02G5/00
CPC分类号： B60T8/368 , B29C45/14065 , B29C45/14639 , B29C45/14836 , B29C2045/14131 , B60T8/441 , H02M7/003
摘要： An actuator control device includes a circuit device that is resin-molded by a plurality of metal molds including at least one movable metal mold to include a first bus bar and a second bus bar. The first bus bar and the second bus bar each include a flat plate-like portion that includes two main flat-face portions having large surface areas, and two sub flat-face portions that are adjacent to the main flat-face portions and have smaller surface areas than the surface areas of the main flat-face portions. One of the main flat-face portions of the first bus bar faces one of the main flat-face portions of the second bus bar. The facing direction differs from the mold release direction of the movable metal mold.
摘要翻译：致动器控制装置包括由包括至少一个活动金属模具的多个金属模具树脂模塑的电路装置，以包括第一母线和第二母线。第一母线和第二母线各自包括平板状部分，其包括具有大表面积的两个主平面部分和与主平面部分相邻的两个副平面部分，并且具有较小的表面积大于主平面部分的表面积。第一汇流条的主平面部分之一面向第二汇流条的主平面部分之一。面向的方向与可动金属模具的脱模方向不同。

8. 发明申请

US20130234277A1 SEMICONDUCTOR DEVICE AND IMAGING APPARATUS 有权
标题翻译：半导体器件和成像装置
公开(公告)号：US20130234277A1
公开(公告)日：2013-09-12
申请号：US13793445
申请日：2013-03-11
申请人： Takaaki Negoro , Hirofumi Watanabe , Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune
发明人： Takaaki Negoro , Hirofumi Watanabe , Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune
IPC分类号： H01L27/146 , H01L29/73
CPC分类号： H01L27/14681 , H01L27/14683 , H01L29/73 , H01L29/739 , H01L31/1105
摘要： The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode.
摘要翻译：本发明涉及一种半导体器件，其具有从半导体衬底表面沿深度方向依次形成的发射极，基极和集电极的垂直晶体管双极结构。半导体器件包括从半导体衬底表面嵌入内部并由氧化物膜绝缘的电极。在基板的表面中，从第一导电型第一半导体区域，第二导电型第二半导体区域和第一导电型第三半导体区域的表面侧配置在半导体器件区域被电极围绕并且沿着电极，氧化膜插入其间，位于第一半导体区域下方的第二半导体区域，位于第二半导体区域下方的第三半导体区域。电极与第一至第三半导体区域绝缘，电流增益可通过向电极施加电压而变化。

9. 发明申请

US20120270026A1 PHENOLIC RESIN FOAMED PLATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：酚醛树脂泡沫板及其生产方法
公开(公告)号：US20120270026A1
公开(公告)日：2012-10-25
申请号：US13516523
申请日：2010-12-15
申请人： Hisashi Mihori , Hirofumi Watanabe , Yuki Saito
发明人： Hisashi Mihori , Hirofumi Watanabe , Yuki Saito
IPC分类号： B32B27/42 , B29C44/06 , B32B5/18
CPC分类号： C08J9/141 , B29C44/24 , B29C44/321 , B29C44/326 , B29C44/468 , B32B5/32 , B32B2266/0271 , C08G14/08 , C08J2361/24 , C08L61/34
摘要： A phenolic resin foamed plate having a thickness of 50 mm or more, in which when the phenolic resin foamed plate is sliced from one main surface of the phenolic resin foamed plate along the main surface in a thickness direction at 5 mm intervals to produce n pieces, which are designated as Q1 to Qn in order from the main surface side, where average densities of Q1 to Qn are dq1 to dqn, respectively, the ratio (dqmin/dqave) of a minimum value dqmin of dq2 to dq(n-1) to an average value dqave of dq2 to dq(n-1) is 0.91≦dqmin/dqave≦0.98, and when a density distribution line is obtained, there exists a straight line parallel with the axis of abscissas that intersects the density distribution line at four points. The phenolic resin foamed plate exhibiting practically sufficient compressive strength and thermal conductivity even when the product thickness is increased.
摘要翻译：一种厚度为50mm以上的酚醛树脂发泡板，其中当酚醛树脂发泡板沿酚醛树脂发泡板的主表面沿厚度方向以5mm间隔从主表面切片以产生n个片，其中从主面侧开始按照Q1〜Qn的平均密度dq1〜dqn分别指定为Q1〜Qn，dq2的最小值dqmin与dq（n-1）的比（dqmin / dqave））至dq2至dq（n-1）的平均值dqave为0.91＆nlE; dqmin / dqave＆nlE; 0.98，并且当获得密度分布线时，存在与横坐标轴平行的直线与密度分布相交在四点。即使产品厚度增加，酚醛树脂发泡板也具有足够的抗压强度和导热性。

10. 发明授权

US08174319B2 Amplifier 失效
标题翻译：放大器
公开(公告)号：US08174319B2
公开(公告)日：2012-05-08
申请号：US13004336
申请日：2011-01-11
申请人： Hideyuki Aota , Hirofumi Watanabe
发明人： Hideyuki Aota , Hirofumi Watanabe
IPC分类号： H03F3/16
CPC分类号： H03F3/345 , G05F1/56
摘要： An amplifier includes a first amplifier comprising an N-type field-effect transistor receiving a reference voltage at a gate, a P-type field-effect transistor connected between a drain of the N-type field-effect transistor and a power supply voltage line, and a constant current source connected between a source of the N-type field-effect transistor and a ground, to output a voltage from a connection of the drain of the N-type and P-type field-effect transistors; a second amplifier comprising a resistance and P-type field-effect transistors connected in series between the power supply voltage line and the ground to receive the voltage output from the first amplifier at their gate, and outputting a voltage from a connection of the P-type field-effect transistor and the resistance; and a switch between an output of the first amplifier and the power supply voltage line and comprising an N-type field-effect transistor receiving a reference voltage at a gate.
摘要翻译：放大器包括：第一放大器，包括在栅极接收参考电压的N型场效应晶体管，连接在N型场效应晶体管的漏极和电源电压线之间的P型场效应晶体管以及连接在N型场效应晶体管的源极和地之间的恒流源，以从N型和P型场效应晶体管的漏极的连接输出电压; 第二放大器，包括串联连接在电源电压线和地之间的电阻和P型场效应晶体管，以接收在其栅极处从第一放大器输出的电压，并输出来自P- 型场效应晶体管和电阻; 以及第一放大器的输出和电源电压线之间的开关，并且包括在栅极处接收参考电压的N型场效应晶体管。

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