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1. 发明授权

US06878977B1 Photoelectric conversion device, and image sensor and image input system making use of the same 失效
标题翻译：光电转换装置，图像传感器和图像输入系统使用相同
公开(公告)号：US06878977B1
公开(公告)日：2005-04-12
申请号：US09511358
申请日：2000-02-23
申请人： Hiraku Kozuka , Takahiro Kaihotsu
发明人： Hiraku Kozuka , Takahiro Kaihotsu
IPC分类号： H01L27/146 , H01L31/0328 , H01L31/062
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H01L2224/48091 , H01L2924/13091 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a photoelectric conversion device comprising a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield comprises a conductor whose potential stands fixed.This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.
摘要翻译：在包括位于像素区域中的第一导电型第一半导体区域，设置在第一半导体区域中的第二导电型第二半导体区域和用于将第二半导体区域电连接到电路元件的布线的光电转换装置中，在像素区域的外部，通过绝缘体在布线的光入射侧设置屏蔽，使得其覆盖至少部分布线，并且屏蔽包括其电位固定的导体。该光电转换低频辐射噪声几乎不受电源噪声的影响。

2. 发明授权

US07151305B2 Photoelectric conversion device, and image sensor and image input system making use of the same 有权
标题翻译：光电转换装置，图像传感器和图像输入系统使用相同
公开(公告)号：US07151305B2
公开(公告)日：2006-12-19
申请号：US11088777
申请日：2005-03-25
申请人： Hiraku Kozuka , Takahiro Kaihotsu
发明人： Hiraku Kozuka , Takahiro Kaihotsu
IPC分类号： H01L27/14 , H01L31/00 , H01L31/0232 , H01L31/06
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H01L2224/48091 , H01L2924/13091 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield includes a conductor whose potential stands fixed. This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.
摘要翻译：在包括位于像素区域中的第一导电型第一半导体区域的光电转换装置中，设置在第一半导体区域中的第二导电型第二半导体区域和用于将第二半导体区域电连接到位于在像素区域外部，通过绝缘体在布线的光入射侧设置屏蔽，使得其覆盖布线的至少一部分，并且屏蔽还包括其电位固定的导体。该光电转换装置几乎不受以电源噪声为代表的低频辐射噪声的影响。

3. 发明申请

US20050167710A1 Photoelectric conversion device, and image sensor and image input system making use of the same 有权
标题翻译：光电转换装置，图像传感器和图像输入系统使用相同
公开(公告)号：US20050167710A1
公开(公告)日：2005-08-04
申请号：US11088777
申请日：2005-03-25
申请人： Hiraku Kozuka , Takahiro Kaihotsu
发明人： Hiraku Kozuka , Takahiro Kaihotsu
IPC分类号： H01L27/146 , H01L31/0328 , H01L31/062
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H01L2224/48091 , H01L2924/13091 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a photoelectric conversion device comprising a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield comprises a conductor whose potential stands fixed. This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.
摘要翻译：在包括位于像素区域中的第一导电型第一半导体区域，设置在第一半导体区域中的第二导电型第二半导体区域和用于将第二半导体区域电连接到电路元件的布线的光电转换装置中，在像素区域外部，通过绝缘体在布线的光入射侧设置屏蔽件，使得其覆盖布线的至少一部分，并且屏蔽还包括其电位固定的导体。该光电转换装置几乎不受以电源噪声为代表的低频辐射噪声的影响。

4. 发明授权

US07235831B2 Light-receiving element and photoelectric conversion device 有权
标题翻译：光接收元件和光电转换装置
公开(公告)号：US07235831B2
公开(公告)日：2007-06-26
申请号：US10637672
申请日：2003-08-11
申请人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
发明人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L31/113
CPC分类号： H01L27/14603 , H01L31/0352 , H01L31/103
摘要： In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element which includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.
摘要翻译：为了降低光接收元件的电容，本发明提供一种光接收元件，其包括第一导电类型的第一半导体区域和第二导电类型的第二半导体区域，设置在第一半导体区域上设置在第二半导体区域和绝缘膜之间的第一导电类型的第三半导体区域和设置在第二半导体区域中的第二导电类型的电极区域，其中第二半导体区域在第二半导体区域之上和之上不存在并连接到由导体组成的阳极或阴极电极。

5. 发明申请

US20050206763A1 Photoelectric conversion apparatus and contact-type image sensor 有权
标题翻译：光电转换装置和接触式图像传感器
公开(公告)号：US20050206763A1
公开(公告)日：2005-09-22
申请号：US11076961
申请日：2005-03-11
申请人： Tetsunobu Kochi , Kazuo Yamazaki , Hiraku Kozuka
发明人： Tetsunobu Kochi , Kazuo Yamazaki , Hiraku Kozuka
IPC分类号： H04N1/028 , H04N3/14 , H04N5/361 , H04N5/374 , H04N5/378
CPC分类号： H04N5/3765 , H04N5/3692 , H04N5/37452
摘要： To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality. A photoelectric conversion apparatus according to the present invention includes: a plurality of photoelectric conversion elements; a plurality of amplifying units for amplifying a signal in accordance with a photo-carrier generated in the photoelectric conversion elements; a plurality of signal holding units for holding output signals from the amplifying units through a plurality of switch units; and a control signal supplying unit for supplying a control signal to the switch units through a control line, in which the control line is sequentially connected to the plurality of switch units and has both ends connected to the control signal supplying units, or a change rate with time of an amplitude of a signal held by the signal holding units is set lower than a change rate with time of am amplitude of the control signal at the time of turning off the switch units.
摘要翻译：为了防止来自暗态的像素的信号以从初始设定的电平移位的电平输出，使图像质量劣化，并且提高图像质量。根据本发明的光电转换装置包括：多个光电转换元件; 多个放大单元，用于根据在光电转换元件中产生的光载流子放大信号; 多个信号保持单元，用于通过多个开关单元保持来自放大单元的输出信号; 以及控制信号提供单元，用于通过控制线将控制信号提供给开关单元，其中控制线顺序地连接到多个开关单元并且两端连接到控制信号提供单元，或者变化率将由信号保持单元保持的信号的幅度的时间设定为低于关闭开关单元时的控制信号的幅度随时间的变化率。

6. 发明申请

US20050068432A1 Image sensor and method for driving an image sensor for reducing fixed pattern noise 审中-公开
公开(公告)号：US20050068432A1
公开(公告)日：2005-03-31
申请号：US10967219
申请日：2004-10-19
申请人： Hiraku Kozuka
发明人： Hiraku Kozuka
IPC分类号： H01L27/146 , H04N1/028 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/378 , H04N5/335
CPC分类号： H04N5/3653 , H04N5/3694 , H04N5/378
摘要： There is provided a method of driving an image sensor which can remove FPN resulting from inter-chip variations without requiring any dark correction. A semiconductor photosensor chip has a plurality of sensor modules mounted on a mounting substrate, and a semiconductor device in which at least an N signal input buffer circuit for receiving N signals, an S signal input buffer circuit for receiving S signals, a differential circuit for calculating any difference between the outputs from the N and S signal input buffer circuits, and a voltage clamping circuit for clamping the output from the differential circuit are formed on a single semiconductor substrate, and the voltage clamping circuit clamps the reset state of S and N signal common output line.

7. 发明授权

US06608299B2 Photoelectric conversion apparatus, driving method thereof, and information processing apparatus 失效
公开(公告)号：US06608299B2
公开(公告)日：2003-08-19
申请号：US09988874
申请日：2001-11-21
申请人： Hiraku Kozuka
发明人： Hiraku Kozuka
IPC分类号： H01L3100
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14663 , H01L31/0352 , H01L31/035281
摘要： A photoelectric conversion apparatus is comprised of a light-receiving element having a first semiconductor region of a first conduction type, and a second semiconductor region of a second conduction type for storing a charge generated by photoelectric conversion adjacent to the first semiconductor region, a readout electrode for reading a signal based on the charge stored in the second semiconductor region; and at least a pair of electrode portions spaced from each other along a photoreceptive surface so as to place a photoreceptive portion of the second semiconductor region in between, and connected to the first semiconductor region. Applied to the pair of electrode portions is a voltage that completely depletes the photoreceptive portion of the second semiconductor region and that can create a potential gradient for moving the charge stored in the second semiconductor region, to the readout electrode side.

8. 发明授权

US06437309B1 Photoelectric transducer 有权
标题翻译：光电传感器
公开(公告)号：US06437309B1
公开(公告)日：2002-08-20
申请号：US09694275
申请日：2000-10-24
申请人： Hiraku Kozuka , Shigetoshi Sugawa
发明人： Hiraku Kozuka , Shigetoshi Sugawa
IPC分类号： H01L3102
CPC分类号： H04N5/374 , H01L27/14609 , H01L27/14643 , H04N5/365 , H04N5/3692
摘要： A photoelectric transducer having a CMOS constant-current-source circuit which can reduce fixed-pattern noise even if the CMOS constant-current-source circuit and photosensors are formed in the same semiconductor substrate is provided. The photoelectric transducer includes a constant-current-source circuit in which a current mirror circuit including pMOS transistors and a current mirror circuit including nMOS transistors are subjected to tandem connection between power supplies, and a plurality of photosensors formed by a second-conduction-type semiconductor formed near a surface of a first-conduction-type semiconductor substrate. The constant-current-source circuit and the plurality of photosensors are formed on the same semiconductor substrate. A voltage drop circuit is provided at one of tandem connection portions of the current mirror circuits in order to suppress stray carriers present near the plurality of photosensors.
摘要翻译：提供了具有CMOS恒流源电路的光电变换器，即使在同一半导体衬底中形成CMOS恒流源电路和光电传感器，也能够减少固定图案噪声。光电传感器包括恒流源电路，其中包括pMOS晶体管的电流镜电路和包括nMOS晶体管的电流镜电路在电源之间进行串联连接，并且由第二导电型电路形成的多个光电传感器半导体形成在第一导电型半导体基板的表面附近。恒流源电路和多个光电传感器形成在同一半导体衬底上。在电流镜电路的串联连接部分之一处设置有电压降电路，以便抑制存在于多个光电传感器附近的杂散载体。

9. 发明授权

US5985689A Method of fabricating photoelectric conversion device having at least one step-back layer 失效
标题翻译：制造具有至少一个后退层的光电转换装置的方法
公开(公告)号：US5985689A
公开(公告)日：1999-11-16
申请号：US12015
申请日：1998-01-22
申请人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
发明人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
IPC分类号： H01L27/146 , H01L31/107 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/3745 , H01L21/20
CPC分类号： H01L27/14681 , H01L31/1075 , Y10S438/90 , Y10S438/936
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.
摘要翻译：光电转换装置包括多个光电转换单元和信号输出单元。信号输出单元具有至少一个用于存储由光电转换装置产生的电信号的存储装置。扫描装置扫描由电转换单元产生的电信号，并且读取装置读出由光电转换单元产生的电信号。每个光电转换单元包括光吸收层和倍增层。乘法层包括至少一个后乘结构，其乘以由吸收光产生的载流子，其中禁带宽度从最小到最大宽度连续变化。

10. 发明授权

US5861655A Photoelectric conversion apparatus and image reading apparatus with good crosstalk characteristics 失效
标题翻译：具有良好串扰特性的光电转换装置和图像读取装置
公开(公告)号：US5861655A
公开(公告)日：1999-01-19
申请号：US783358
申请日：1997-01-16
申请人： Hiraku Kozuka , Shigetoshi Sugawa
发明人： Hiraku Kozuka , Shigetoshi Sugawa
IPC分类号： H01L27/14 , H01L21/322 , H01L21/76 , H01L27/146 , H01L31/10 , H01L31/042 , H01L31/0232
CPC分类号： H01L27/14678 , H01L27/14623
摘要： A photoelectric conversion apparatus has an element separation structure that is adequate as to crosstalk between pixels and excellent in FPN characteristics. The photoelectric conversion apparatus comprises a semiconductor substrate of a first conduction type, a plurality of first semiconductor regions formed in a surface of the semiconductor substrate and having the opposite conduction type to that of the substrate, a second semiconductor region having the same conduction type as the first semiconductor regions and disposed between the plurality of first semiconductor regions thus formed, and a third semiconductor region disposed between the first and second semiconductor regions having the first conduction type, and having an impurity concentration higher than that of the semiconductor substrate.
摘要翻译：光电转换装置具有对于像素之间的串扰足以使FPN特性优异的元件分离结构。光电转换装置包括第一导电类型的半导体衬底，形成在半导体衬底的表面中并具有与衬底相反的导电类型的多个第一半导体区域，具有与衬底相同的导电类型的第二半导体区域第一半导体区域，并且设置在如此形成的多个第一半导体区域之间，以及设置在具有第一导电类型的第一和第二半导体区域之间并且具有高于半导体衬底的杂质浓度的第三半导体区域。

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