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1. 发明授权

US07037994B2 Acenaphthylene derivative, polymer, and antireflection film-forming composition 有权
标题翻译：苊烯衍生物，聚合物和抗反射膜形成组合物
公开(公告)号：US07037994B2
公开(公告)日：2006-05-02
申请号：US10624678
申请日：2003-07-23
申请人： Hikaru Sugita , Keiji Konno , Masato Tanaka , Tsutomu Shimokawa
发明人： Hikaru Sugita , Keiji Konno , Masato Tanaka , Tsutomu Shimokawa
IPC分类号： C08F32/08 , C08F12/32 , C08F132/08
CPC分类号： C07C69/14 , C07C33/38 , C07C2603/20 , G03F7/091
摘要： Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R1 is a hydrogen atom and R2and R3 individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.
摘要翻译：公开了新型化合物乙酰氧基甲基苊烯和羟甲基苊。由含有式（3）结构单元的这些新化合物制备的聚合物，其中R 1是氢原子，R 2和R 3， SUP>分别表示一价原子或一价有机基团。聚合物适合作为抗反射膜形成组合物的组分，其具有高抗反射效果并且不会与抗蚀剂膜混合。

2. 发明申请

US20080026314A1 Silane Compound, Polysiloxane, and Radiation-Sensitive Resin Composition 审中-公开
标题翻译：硅烷化合物，聚硅氧烷和辐射敏感性树脂组合物
公开(公告)号：US20080026314A1
公开(公告)日：2008-01-31
申请号：US10576075
申请日：2004-10-14
申请人： Isao Nishimura , Noboru Yamahara , Masato Tanaka , Tsutomu Shimokawa
发明人： Isao Nishimura , Noboru Yamahara , Masato Tanaka , Tsutomu Shimokawa
IPC分类号： G03C5/00
CPC分类号： G03F7/0757 , C07F7/0838 , C07F7/1804 , C08G77/14 , C08G77/24 , G03F7/0045
摘要： A novel polysiloxane suitable as a resin component of a chemically-amplified resist exhibiting particularly excellent I-D bias, depth of focus (DOF), and the like, a novel silane compound useful as a raw material for synthesizing the polysiloxane, and a radiation-sensitive resin composition comprising the polysiloxane are provided.The silane compound is shown by the following formula (I), and the polysiloxane has a structural unit shown by the following formula (1), wherein R is an alkyl group, R1 and R2 individually represent a fluorine atom, lower alkyl group, or lower fluoroalkyl group, n is 0 or 1, k is 1 or 2, and i is an integer of 0 to 10.The radiation-sensitive resin composition comprises the polysiloxane and a photoacid generator.
摘要翻译：适用作为具有特别优异的ID偏压，深度聚焦（DOF）等的化学增幅抗蚀剂的树脂组分的新型聚硅氧烷，可用作合成聚硅氧烷的原料的新型硅烷化合物和辐射敏感性提供了包含聚硅氧烷的树脂组合物。硅烷化合物由下式（I）表示，聚硅氧烷具有下述式（1）所示的结构单元，式中，R为烷基，R 1，R 2， 2个独立地表示氟原子，低级烷基或低级氟代烷基，n为0或1，k为1或2，i为0至10的整数。该辐射敏感性树脂组合物包含聚硅氧烷和光致酸发生剂。

3. 发明授权

US06852791B2 Anti-reflection coating forming composition 有权
标题翻译：防反射涂层成型组合物
公开(公告)号：US06852791B2
公开(公告)日：2005-02-08
申请号：US09987367
申请日：2001-11-14
申请人： Kazuo Kawaguchi , Masato Tanaka , Tsutomu Shimokawa
发明人： Kazuo Kawaguchi , Masato Tanaka , Tsutomu Shimokawa
IPC分类号： G03F7/004 , G03F7/09 , C08K3/00
CPC分类号： G03F7/091
摘要： An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.
摘要翻译：提供了防反射涂层组合物。该组合物包括聚合物和溶剂。聚合物具有由式（1）表示的结构单元：其中R1是除氢原子或一价基团以外的一价原子，n为0-4的整数，条件是当n为2- 如图4所示，多个R1相同或不同; R2和R3各自为一价原子或基团; X为二价基团。由该组合物形成的抗反射涂层具有高的抗反射效果，不会产生与抗蚀剂膜的混合，并且能够与正或负的抗蚀剂配合，分辨率和精度优异的抗蚀剂图案轮廓良好。

4. 发明申请

US20070248911A1 Pattern forming method and bilayer film 审中-公开
公开(公告)号：US20070248911A1
公开(公告)日：2007-10-25
申请号：US11808508
申请日：2007-06-11
申请人： Haruo Iwasawa , Akihiro Hayashi , Tsutomu Shimokawa , Kazuo Kawaguchi , Masato Tanaka
发明人： Haruo Iwasawa , Akihiro Hayashi , Tsutomu Shimokawa , Kazuo Kawaguchi , Masato Tanaka
IPC分类号： G03C1/72
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , Y10S430/106
摘要： A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500-100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.

5. 发明授权

US07244549B2 Pattern forming method and bilayer film 有权
标题翻译：图案形成方法和双层膜
公开(公告)号：US07244549B2
公开(公告)日：2007-07-17
申请号：US10226321
申请日：2002-08-23
申请人： Haruo Iwasawa , Akihiro Hayashi , Tsutomu Shimokawa , Kazuo Kawaguchi , Masato Tanaka
发明人： Haruo Iwasawa , Akihiro Hayashi , Tsutomu Shimokawa , Kazuo Kawaguchi , Masato Tanaka
IPC分类号： G03C1/825 , G03F7/039 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , Y10S430/106
摘要： A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500–100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.
摘要翻译：一种图案形成方法，包括形成辐射敏感性树脂组合物的涂层，其包含含酸解离基团的聚硅氧烷，碱解不溶性或几乎不碱溶性，当酸解离基解离时变成碱溶性含有碳含量为80重量％以上且聚苯乙烯换算的重均分子量为500〜10000的聚合物的薄膜，提供了对涂层的涂布辐射。该方法可以通过在干蚀刻工艺中适当地选择特定的蚀刻气体而不受驻波的影响而形成具有高纵横比的微小图案。

6. 发明申请

US20100178620A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION 审中-公开
标题翻译：反转图案形成方法和树脂组合物
公开(公告)号：US20100178620A1
公开(公告)日：2010-07-15
申请号：US12624427
申请日：2009-11-24
申请人： Satoshi DEI , Kyoyu Yasuda , Koichi Hasegawa , Fumihiro Toyokawa , Masato Tanaka , Keiji Konno
发明人： Satoshi DEI , Kyoyu Yasuda , Koichi Hasegawa , Fumihiro Toyokawa , Masato Tanaka , Keiji Konno
IPC分类号： B05D1/32 , G03F7/20 , C09D183/04
CPC分类号： G03F7/0757 , C09D183/04 , G03F7/0035 , G03F7/0048 , G03F7/40
摘要： A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.
摘要翻译：形成反转图案的方法包括在基板上形成光致抗蚀剂图案，用由聚硅氧烷和溶剂的树脂组合物填充由光致抗蚀剂图案形成的空间，并除去光致抗蚀剂图案以形成倒置图案。树脂组合物包含（A）通过水解和缩合具有特定结构的两种类型的可水解硅烷化合物获得的聚硅氧烷，和（B）含有特定结构的醇或醚的有机溶剂。

7. 发明申请

US20100151384A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
标题翻译：抗静电膜的组合物及其生产方法
公开(公告)号：US20100151384A1
公开(公告)日：2010-06-17
申请号：US12715406
申请日：2010-03-02
申请人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
发明人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
IPC分类号： G03F7/075 , C07F7/08
CPC分类号： G03F7/0752 , G03F7/0751 , G03F7/11 , H01L21/0274 , H01L21/0332 , Y10S430/106 , Y10S430/115 , Y10T428/31515 , Y10T428/31612 , Y10T428/31663
摘要： A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi (OR3)4-a (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要翻译：提供了抗蚀剂下层膜用组合物。该组合物具有优异的储存稳定性，并且可以形成对抗蚀剂膜具有优异粘合性的抗蚀剂下层膜，可以提高抗蚀剂图案的再现性，并且耐显影用碱性液体和除去抗蚀剂期间的氧气需求。该组合物包含下式（A）的硅烷化合物的水解产物和/或缩合物，其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si（OR 3）4-a（A），R 2各自表示氢原子，卤原子或一价有机基团，R 3分别表示一价有机基团，R 1为除OR 3以外的基团，a为1〜3的整数，b为1〜3的整数，c为 0〜2的整数，条件是a = b + c。

8. 发明申请

US20090050020A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
标题翻译：抗静电膜的组合物及其生产方法
公开(公告)号：US20090050020A1
公开(公告)日：2009-02-26
申请号：US11816642
申请日：2006-02-24
申请人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
发明人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
IPC分类号： C09D4/00
CPC分类号： G03F7/0752 , G03F7/0751 , G03F7/11 , H01L21/0274 , H01L21/0332 , Y10S430/106 , Y10S430/115 , Y10T428/31515 , Y10T428/31612 , Y10T428/31663
摘要： A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要翻译：提供了抗蚀剂下层膜用组合物。该组合物具有优异的储存稳定性，并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜，可以提高抗蚀剂图案的再现性，并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。组合物包含下式（A）的硅烷化合物的水解产物和/或缩合物，<？在线式描述=“在线式”末端=“铅”→> R1bR2cSi（OR3）4- a（A）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R1是具有至少一个不饱和键的一价有机基团，R2各自表示氢原子，卤素原子或一价有机基团，R 3分别表示一价有机基团，R 1为除OR 3以外的基团，a为1〜3的整数，b为1〜3的整数，c为0〜2的整数，条件是a = b + c。

9. 发明授权

US08808446B2 Composition for resist underlayer film and process for producing same 有权
标题翻译：抗蚀剂下层膜的组合物及其制造方法
公开(公告)号：US08808446B2
公开(公告)日：2014-08-19
申请号：US11816642
申请日：2006-02-24
申请人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
发明人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
IPC分类号： C09D4/00 , G03F7/075 , C07F7/08 , H01L21/027 , G03F7/11 , H01L21/033
CPC分类号： G03F7/0752 , G03F7/0751 , G03F7/11 , H01L21/0274 , H01L21/0332 , Y10S430/106 , Y10S430/115 , Y10T428/31515 , Y10T428/31612 , Y10T428/31663
摘要： A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要翻译：提供了抗蚀剂下层膜用组合物。该组合物具有优异的储存稳定性，并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜，可以提高抗蚀剂图案的再现性，并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。该组合物包含下式（A）的硅烷化合物的水解产物和/或缩合物，其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si（OR 3）4-a（A），R 2各自表示氢原子，卤原子或一价有机基团，R 3分别表示一价有机基团，R 1为除OR 3以外的基团，a为1〜3的整数，b为1〜3的整数，c为 0〜2的整数，条件是a = b + c。

10. 发明授权

US08968458B2 Composition for resist underlayer film and process for producing same 有权
标题翻译：抗蚀剂下层膜的组合物及其制造方法
公开(公告)号：US08968458B2
公开(公告)日：2015-03-03
申请号：US12715406
申请日：2010-03-02
申请人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
发明人： Keiji Konno , Masato Tanaka , Momoko Ishii , Junichi Takahashi , Tomoki Nagai
IPC分类号： C07F7/08 , G03F7/075 , G03F7/11 , H01L21/027 , H01L21/033
CPC分类号： G03F7/0752 , G03F7/0751 , G03F7/11 , H01L21/0274 , H01L21/0332 , Y10S430/106 , Y10S430/115 , Y10T428/31515 , Y10T428/31612 , Y10T428/31663
摘要： A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
摘要翻译：提供了抗蚀剂下层膜用组合物。该组合物具有优异的储存稳定性，并且可以形成对抗蚀剂膜具有优异粘合性的抗蚀剂下层膜，可以提高抗蚀剂图案的再现性，并且耐显影用碱性液体和除去抗蚀剂期间的氧气需求。该组合物包含下式（A）的硅烷化合物的水解产物和/或缩合物，其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si（OR 3）4-a（A），R 2各自表示氢原子，卤原子或一价有机基团，R 3分别表示一价有机基团，R 1为除OR 3以外的基团，a为1〜3的整数，b为1〜3的整数，c为 0〜2的整数，条件是a = b + c。

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