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    • 3. 发明授权
    • Ion source
    • 离子源
    • US4687938A
    • 1987-08-18
    • US808027
    • 1985-12-12
    • Hifumi TamuraHiroyasu Shichi
    • Hifumi TamuraHiroyasu Shichi
    • H01J27/26H01J37/08H01J37/26H01J27/00
    • H01J27/26H01J37/08
    • An ion source includes an ion source material holder adapted to load an ion source material thereon and having an aperture at the bottom thereof, an ion emitter mounted on the ion source material holder at the aperture, heating means for heating the ion source material holder and the ion emitter, and an ion extracting electrode for extracting an ion beam from the ion emitter. The ion emitter is made of a mixture of a material having a large work function and a material having a small work function, in order to be able to emit both positive ions and negative ions from the ion emitter. The polarity of a voltage applied between the ion emitter and the ion extracting electrode is changed so that one of the positive ion beam and the negative ion beam can be selectively extracted from the ion emitter.
    • 离子源包括离子源材料保持器,其适于在其上装载离子源材料并且在其底部具有孔,安装在孔处的离子源材料保持器上的离子发射器,用于加热离子源材料保持器的加热装置和 离子发射体和用于从离子发射器提取离子束的离子提取电极。 离子发射器由具有大功函数的材料和具有小功函数的材料的混合物制成,以便能够从离子发射器发射正离子和负离子。 改变施加在离子发射体和离子提取电极之间的电压的极性,使得能够从离子发射体中选择性地提取正离子束和负离子束中的一个。
    • 10. 发明授权
    • Ion beam processing apparatus
    • 离子束处理装置
    • US07700931B2
    • 2010-04-20
    • US11674262
    • 2007-02-13
    • Hiroyasu ShichiSatoshi TomimatsuNoriyuki KaneokaKaoru UmemuraKoji Ishiguro
    • Hiroyasu ShichiSatoshi TomimatsuNoriyuki KaneokaKaoru UmemuraKoji Ishiguro
    • G21K5/10H01J37/08A61N5/00G21G5/00G21K7/00G01N23/00
    • H01J37/261H01J37/20H01J37/3045H01J2237/08H01J2237/20207H01J2237/24528H01J2237/28H01J2237/31713H01J2237/3174H01J2237/31749
    • The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.
    • 本发明提供了一种离子束处理技术,用于提高使用离子束处理样品的一部分的精度,而不需要比常规所需的处理时间长的处理时间,并且缩短了分离微测试件所需的时间,而没有 打破样品或准备分离所需的时间。 离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇 。 此外,离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力,通过进行离子束处理从样品中提取试验片 围绕第二样品台的倾斜轴安装。 离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段 通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。