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1. 发明授权

US08500975B2 Method and apparatus for sputtering onto large flat panels 有权
标题翻译：用于溅射到大平板上的方法和装置
公开(公告)号：US08500975B2
公开(公告)日：2013-08-06
申请号：US11484333
申请日：2006-07-11
申请人： Hien Minh Huu Le , Akihiro Hosokawa , Avi Tepman
发明人： Hien Minh Huu Le , Akihiro Hosokawa , Avi Tepman
IPC分类号： C25B9/00 , C25B11/00 , C25B13/00 , C23C14/00
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.
摘要翻译：放置在矩形溅射靶的背面的矩形磁控管，用于涂覆矩形面板并且具有相对极性的磁体，所述磁体布置成在对应于邻近靶的等离子体轨道之间形成间隙，所述等离子体轨道以闭合的蛇形或螺旋形环路延伸。螺旋可以具有大量的包装，并且闭合的环可以在包装之前折叠。磁控管的尺寸仅稍低于目标的尺寸，并且在目标的两个垂直方向上扫描，对于对应于至少间隙间隔的2m靶的扫描长度例如为约100mm 在环路的平行部分之间。环路中一些磁铁下方的中心铁磁垫片可以补偿垂直下垂。磁控管可以以它们之间旋转90°的两个交替的双Z图案进行扫描。

2. 发明授权

US08961756B2 Ganged scanning of multiple magnetrons, especially two level folded magnetrons 有权
标题翻译：组合扫描多个磁控管，特别是两个级别的磁控管
公开(公告)号：US08961756B2
公开(公告)日：2015-02-24
申请号：US11780757
申请日：2007-07-20
申请人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
发明人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
摘要翻译：磁控管组件包括一个或多个磁控管，每个磁控管在靶的溅射面上形成封闭的等离子体环。目标可以包括多个条带目标，相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。带状磁控管可以是两级折叠磁控管，其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环，并且其端部在目标的中间相遇。形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案，其中在角附近提供额外的磁体位置以引导等离子体轨道。多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上，并且单独部分地由一个或多个靶的背面上的辊支撑。

3. 发明授权

US09011969B2 Low-E panel with improved dielectric layer and method for forming the same 有权
标题翻译：具有改善介电层的Low-E面板及其形成方法
公开(公告)号：US09011969B2
公开(公告)日：2015-04-21
申请号：US13337962
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
IPC分类号： B05D5/06 , C03C17/34 , C03C17/36
CPC分类号： C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C17/3681
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
摘要翻译：本文提供的实施例描述了低e面板和形成低e面板的方法。提供透明基板。在透明基板上形成金属氧氮化物层。金属氧氮化物层包括第一金属和第二金属。在透明基板上形成反射层。

4. 发明申请

US20130164560A1 Low-E Panel With Improved Dielectric Layer And Method For Forming The Same 有权
标题翻译：具有改进的介电层的Low-E面板及其形成方法
公开(公告)号：US20130164560A1
公开(公告)日：2013-06-27
申请号：US13337962
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
IPC分类号： B32B9/00 , B05D5/06
CPC分类号： C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C17/3681
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
摘要翻译：本文提供的实施例描述了低e面板和形成低e面板的方法。提供透明基板。在透明基板上形成金属氧氮化物层。金属氧氮化物层包括第一金属和第二金属。在透明基板上形成反射层。

5. 发明授权

US08298849B2 Nitrogen reactive sputtering of Cu-In-Ga-N for solar cells 失效
标题翻译：用于太阳能电池的Cu-In-Ga-N的氮反应溅射
公开(公告)号：US08298849B2
公开(公告)日：2012-10-30
申请号：US13269713
申请日：2011-10-10
申请人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
发明人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
IPC分类号： H01L21/00
CPC分类号： H01L31/0324 , C23C14/024 , C23C14/0641 , C23C14/5866 , H01L21/02422 , H01L21/02439 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/02568 , H01L21/02631 , H01L31/032 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
摘要翻译：在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。

6. 发明授权

US08784934B2 Heat stable SnAl and SnMg based dielectrics 有权
标题翻译：耐热SnAl和SnMg基电介质
公开(公告)号：US08784934B2
公开(公告)日：2014-07-22
申请号：US13305550
申请日：2011-11-28
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
IPC分类号： B05D5/06
CPC分类号： C03C17/366 , C03C17/2453 , C03C17/36 , C03C17/3618 , C03C17/3642 , C23C14/08 , C23C28/32 , C23C28/345 , H01B3/10
摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.
摘要翻译：包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和涂层和加热处理产品的雾度特性。

7. 发明申请

US20130136932A1 Heat Stable SnAl and SnMg Based Dielectrics 有权
公开(公告)号：US20130136932A1
公开(公告)日：2013-05-30
申请号：US13305550
申请日：2011-11-28
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
IPC分类号： B32B17/06 , B32B15/04 , C09K3/00 , C03C17/23 , B05D3/02 , C03C17/06 , B32B9/00 , B05D5/06
CPC分类号： C03C17/366 , C03C17/2453 , C03C17/36 , C03C17/3618 , C03C17/3642 , C23C14/08 , C23C28/32 , C23C28/345 , H01B3/10
摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

8. 发明申请

US20120196399A1 Nitrogen Reactive Sputtering of Cu-In-Ga-N For Solar Cells 失效
标题翻译：用于太阳能电池的Cu-In-Ga-N的氮反应性溅射
公开(公告)号：US20120196399A1
公开(公告)日：2012-08-02
申请号：US13269713
申请日：2011-10-10
申请人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
发明人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/0324 , C23C14/024 , C23C14/0641 , C23C14/5866 , H01L21/02422 , H01L21/02439 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/02568 , H01L21/02631 , H01L31/032 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
摘要翻译：在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。

9. 发明授权

US09045363B2 Low-E panels with ternary metal oxide dielectric layer and method for forming the same 有权
标题翻译：具有三元金属氧化物介电层的低E面板及其形成方法
公开(公告)号：US09045363B2
公开(公告)日：2015-06-02
申请号：US13338018
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
IPC分类号： C03C17/23 , C03C17/34 , C03C17/36
CPC分类号： C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/21 , C03C2217/228 , C03C2217/23 , C03C2217/26 , C03C2217/281
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
摘要翻译：本文提供的实施例描述了低e面板和形成低e面板的方法。提供透明基板。在透明基板上形成金属氧化物层。金属氧化物层包括第一元件，第二元件和第三元件。在透明基板上形成反射层。第一元素可以包括锡或锌。第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。金属氧化物层也可以包括氮。

10. 发明授权

US08747626B2 Method of generating high purity bismuth oxide 有权
标题翻译：产生高纯铋氧化物的方法
公开(公告)号：US08747626B2
公开(公告)日：2014-06-10
申请号：US13307301
申请日：2011-11-30
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： C23C14/08 , C23C14/58
CPC分类号： C23C14/086 , C23C14/024 , C23C14/5806 , Y10T428/12549 , Y10T428/265
摘要： A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
摘要翻译：用于形成和保护高质量氧化铋膜的方法包括在包含Si，碱金属或碱土金属之一的衬底上沉积透明薄膜。透明薄膜在室温和较高温度下是稳定的，并且用作扩散阻挡层，用于将杂质从基底扩散到氧化铋中。使用反应溅射，来自化合物靶的溅射或反应性蒸发来在扩散阻挡层上沉积氧化铋膜。

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