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1. 发明授权

US07291857B2 Non-volatile memory 失效
标题翻译：非易失性存储器
公开(公告)号：US07291857B2
公开(公告)日：2007-11-06
申请号：US10967222
申请日：2004-10-19
申请人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
IPC分类号： H01L47/00
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16 , H01L45/1625
摘要： A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.
摘要翻译：一种非易失性存储器（1），其包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸穿过其延伸到其后表面的多个第一电极（15），形成在一个表面上的第二电极基板（11）的一侧，以及保持在第一电极（15）和第二电极（12）之间的记录层（14），并且通过施加在第一电极（15）和第二电极（12），所述多个第一电极（15）在构成单个存储单元（MC）的区域中与记录层（14）电连接。非易失性存储器（1）可以降低功耗，并具有很大的设计自由度和高可靠性。

2. 发明申请

US20050045864A1 Non-volatile memory 失效
标题翻译：非易失性存储器
公开(公告)号：US20050045864A1
公开(公告)日：2005-03-03
申请号：US10967222
申请日：2004-10-19
申请人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
IPC分类号： H01L27/24 , H01L45/00 , H01L47/00
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16 , H01L45/1625
摘要： A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.
摘要翻译：一种非易失性存储器（1），其包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸穿过其延伸到其后表面的多个第一电极（15），形成在一个表面上的第二电极基板（11）的一侧，以及保持在第一电极（15）和第二电极（12）之间的记录层（14），并且通过施加在第一电极（15）和第二电极（12），所述多个第一电极（15）在构成单个存储单元（MC）的区域中与记录层（14）电连接。非易失性存储器（1）可以降低功耗，并具有很大的设计自由度和高可靠性。

3. 发明授权

US06844564B2 Non-volatile memory 失效
公开(公告)号：US06844564B2
公开(公告)日：2005-01-18
申请号：US10608130
申请日：2003-06-30
申请人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
IPC分类号： H01L27/24 , H01L45/00 , H01L47/00
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16 , H01L45/1625
摘要： A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.

4. 发明申请

US20050121659A1 Non-volatile memory and the fabrication method thereof 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20050121659A1
公开(公告)日：2005-06-09
申请号：US11038034
申请日：2005-01-21
申请人： Hideyuki Tanaka , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Kiyoshi Morimoto
IPC分类号： G11B9/00 , G11B9/04 , G11C11/22 , G11C16/02 , H01L27/10 , H01L27/24 , H01L45/00 , H01L27/108 , H01L29/76
CPC分类号： G11C13/0004 , B82Y10/00 , G11B9/04 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1463 , G11B9/149 , G11C11/22 , H01L27/101 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.
摘要翻译：一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。其中记录层（12）形成在其上形成无机介电层的一侧。使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

5. 发明授权

US06900517B2 Non-volatile memory with phase-change recording layer 失效
标题翻译：具有相变记录层的非易失性存储器
公开(公告)号：US06900517B2
公开(公告)日：2005-05-31
申请号：US10646816
申请日：2003-08-25
申请人： Hideyuki Tanaka , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Kiyoshi Morimoto
IPC分类号： G11B9/00 , G11B9/04 , G11C11/22 , G11C16/02 , H01L27/10 , H01L27/24 , H01L45/00 , H01L29/00
CPC分类号： G11C13/0004 , B82Y10/00 , G11B9/04 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1463 , G11B9/149 , G11C11/22 , H01L27/101 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.
摘要翻译：一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。其中记录层（12）形成在其上形成无机介电层的一侧。使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

6. 发明授权

US07115473B2 Method of fabrication of non-volatile memory 有权
标题翻译：非易失性存储器的制作方法
公开(公告)号：US07115473B2
公开(公告)日：2006-10-03
申请号：US11038034
申请日：2005-01-21
申请人： Hideyuki Tanaka , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Kiyoshi Morimoto
IPC分类号： H01L21/336
CPC分类号： G11C13/0004 , B82Y10/00 , G11B9/04 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1463 , G11B9/149 , G11C11/22 , H01L27/101 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.
摘要翻译：一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。其中记录层（12）形成在其上形成无机介电层的一侧。使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

7. 发明授权

US07023014B2 Non-volatile memory and fabrication method thereof 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US07023014B2
公开(公告)日：2006-04-04
申请号：US10716621
申请日：2003-11-20
申请人： Kiyoshi Morimoto , Hideyuki Tanaka , Takashi Ohtsuka , Akihito Miyamoto
发明人： Kiyoshi Morimoto , Hideyuki Tanaka , Takashi Ohtsuka , Akihito Miyamoto
IPC分类号： H01L29/18
CPC分类号： G11C13/0004 , H01L27/0814 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/1625 , H01L45/1666 , H01L45/1675
摘要： The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.
摘要翻译：本发明涉及一种非易失性存储器，包括：第一电极（11）; 第二电极（12）; 以及夹在第一电极（11）和第二电极（12）之间的相变记录介质（14），其中通过在第一电极（11）和第二电极（12）上施加电脉冲来改变电阻值），第一电极（11）和第二电极（12）中的至少一个包含选自钌，铑和锇中的至少一种元素和相变记录介质（14）作为主要成分，由含有硫族元素的相变材料形成。这种非易失性存储器通过防止由施加电流引起的性能劣化（即，电极和相变记录介质之间的相互杂质扩散）而显示出改进的耐久性和可靠性。

8. 发明授权

US09296080B2 Glass plate conveying device and beveling apparatus including the same 有权
标题翻译：玻璃板输送装置和包括其的斜面装置
公开(公告)号：US09296080B2
公开(公告)日：2016-03-29
申请号：US13876051
申请日：2011-03-24
申请人： Morimasa Kuge , Hideyuki Tanaka , Keiji Tsujita , Kazunori Takahara
发明人： Morimasa Kuge , Hideyuki Tanaka , Keiji Tsujita , Kazunori Takahara
IPC分类号： B24B41/06 , B24B9/10 , B65G15/00 , B65G49/06 , H01L21/677 , B24B41/00
CPC分类号： B24B9/102 , B24B9/107 , B24B41/005 , B24B41/06 , B65G15/00 , B65G49/065 , B65G2249/045 , H01L21/67706
摘要： The present invention provides a conveying device including a transfer mechanism including: a belt portion configured to support a non-pattern surface of a glass plate and transfer the glass plate in a conveying direction; and a pattern surface supporting water guide arranged at a position opposed to the belt portion and configured to apply predetermined water pressure to a pattern surface of the glass plate, wherein the transfer mechanism is configured such that: the glass plate is pressed against the belt portion by water pressure of the pattern surface supporting water guide; and the glass plate is sandwiched between the pattern surface supporting water guide and the belt portion in a state where the pattern surface of the glass plate is in a non-contact state, the conveying device being capable of stably transferring the glass plate without making scratches on the pattern surface of the glass plate.
摘要翻译：本发明提供一种包括传送机构的传送装置，包括：皮带部，其构造成支撑玻璃板的非图案表面并在输送方向上传送玻璃板; 以及布置在与所述带部分相对的位置处并构造成对所述玻璃板的图案表面施加预定水压的图案表面支撑水引导件，其中所述传送机构构造成：所述玻璃板被压靠在所述带部分上通过图案表面支撑导水器的水压; 并且在玻璃板的图案表面处于非接触状态的状态下，玻璃板被夹在图案表面支撑水引导件和带部分之间，输送装置能够稳定地转移玻璃板而不产生划痕在玻璃板的图案表面上。

9. 发明授权

US09212602B2 Electric motor control apparatus and electric supercharging apparatus using electric motor control apparatus 有权
标题翻译：电动机控制装置和使用电动机控制装置的电动增压装置
公开(公告)号：US09212602B2
公开(公告)日：2015-12-15
申请号：US13465440
申请日：2012-05-07
申请人： Yuya Hisano , Hideyuki Tanaka , Masahiro Iezawa
发明人： Yuya Hisano , Hideyuki Tanaka , Masahiro Iezawa
IPC分类号： H02P1/46 , F02D29/06 , F02B39/10 , H02P6/14 , H02P6/18 , F02B37/10 , G11B11/105
CPC分类号： F02B39/10 , F02B37/10 , G11B11/1056 , H02P6/157 , H02P6/182
摘要： An electric motor control apparatus includes a phase correction portion that generates and outputs an amount of phase correction with which to correct a phase of a signal from a position sensor detecting a position of a magnetic pole of an electric motor. The phase correction portion generates and outputs an energization stop signal in a case where a rotation speed of the electric motor is within a predetermined range and stores an amount of phase correction generated therein according to a comparison between a signal from the position sensor or a first phase and an induced voltage of the electric motor to output the amount of phase correction.
摘要翻译：电动机控制装置包括：相位校正部，其生成并输出相位校正量，用于校正来自检测电动机的磁极位置的位置传感器的信号的相位。在电动机的转速在预定范围内的情况下，相位校正部分产生并输出通电停止信号，并根据来自位置传感器的信号或第一相和电动机的感应电压输出相位校正量。

10. 发明授权

US09114935B2 Plate member conveying apparatus and method of conveying plate member 有权
标题翻译：板材输送装置及输送板材的方法
公开(公告)号：US09114935B2
公开(公告)日：2015-08-25
申请号：US14238269
申请日：2011-08-12
申请人： Morimasa Kuge , Hideyuki Tanaka , Keiji Tsujita , Kazunori Takahara
发明人： Morimasa Kuge , Hideyuki Tanaka , Keiji Tsujita , Kazunori Takahara
IPC分类号： B65G49/06 , B65G15/60 , B65G15/58 , H01L21/67 , H01L21/677
CPC分类号： B65G15/58 , B65G49/064 , B65G49/065 , B65G2249/04 , B65G2249/045 , H01L21/67092 , H01L21/67706
摘要： The present invention provides a plate member conveying apparatus configured such that an occupied area is small, and a plate member is unlikely to be damaged. A plate member conveying apparatus according to the present invention includes a feed device having a conveying portion and a pressurizing portion. The conveying portion includes a belt configured to contact one of surfaces of a plate member in a vertical state to feed the plate member in a conveying direction. The pressurizing portion applies pressure of a fluid to the other surface of the plate member in the vertical state in a direction perpendicular to the surface of the plate member to press the plate member toward the belt. Then, the plate member in the vertical state is conveyed while being held by sandwiching the plate member between the belt of the conveying portion and the fluid of the pressurizing portion.
摘要翻译：本发明提供一种板构件输送装置，其构造成使得占用面积小，并且板构件不太可能被损坏。根据本发明的板件输送装置包括具有输送部和加压部的进给装置。输送部包括：带，其被构造成在垂直状态下接触板构件的一个表面，以在输送方向上供给板构件。加压部在与板部件的表面垂直的方向上以垂直状态向板状部件的另一面施加流体的压力，将板部件向带状部施加压力。然后，通过将板构件夹持在输送部的带与加压部的流体之间，同时保持垂直状态的板构件。

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