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1. 发明授权

US07582184B2 Plasma processing member 有权
标题翻译：等离子体处理部件
公开(公告)号：US07582184B2
公开(公告)日：2009-09-01
申请号：US11361177
申请日：2006-02-24
申请人： Yasumitsu Tomita , Hideyoshi Tsuruta
发明人： Yasumitsu Tomita , Hideyoshi Tsuruta
IPC分类号： H01L21/3065 , C23C16/50 , C23C16/503 , C23C16/509 , C23C16/46
CPC分类号： H01J37/32532 , H01J37/32009 , H01J37/32577 , H01J2237/0206
摘要： A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25Ω or less.
摘要翻译：等离子体处理部件包括陶瓷基体，嵌入在陶瓷基体中的等离子体产生电极以及与等离子体产生电极连接的电极电源部件。当使用高于13.56MHz的频率的高频功率产生等离子体时的等离子体处理部件的阻抗被调整为25Om以下。

2. 发明授权

US07157666B2 Systems for producing semiconductors and members therefor 有权
标题翻译：半导体制造系统及其成员
公开(公告)号：US07157666B2
公开(公告)日：2007-01-02
申请号：US10753583
申请日：2004-01-08
申请人： Yoshinobu Goto , Hideyoshi Tsuruta
发明人： Yoshinobu Goto , Hideyoshi Tsuruta
IPC分类号： C23C16/00 , F27B5/08 , F27B5/16
CPC分类号： F27B17/0025 , F27D11/02 , H01L21/67109
摘要： A member provided around a susceptor for mounting a semiconductor in a chamber of a semiconductor production system. The member has a face opposing the susceptor and a center line average surface roughness of the face opposing the susceptor is 0.5 μm or less. Alternatively, the face opposing the susceptor has a thermal emissivity ε of 0.5 or lower. The member can also be a liner [4] having a supported face [4] whose area is not more than 20 percent of that of the face [4] opposing the susceptor.
摘要翻译：设置在基座周围的构件，用于将半导体安装在半导体生产系统的腔室中。该构件具有与基座相对的面，并且与基座相对的面的中心线平均表面粗糙度为0.5μm以下。或者，与感受器相对的面的热发射率ε为0.5以下。该构件还可以是具有支撑面[4]的衬垫[4]，其面积不大于与感受器相对的面部[4]面积的20％。

3. 发明授权

US5817406A Ceramic susceptor with embedded metal electrode and brazing material connection 失效
标题翻译：陶瓷感受器带有嵌入式金属电极和钎焊材料连接
公开(公告)号：US5817406A
公开(公告)日：1998-10-06
申请号：US591333
申请日：1996-01-24
申请人： David W. Cheung , Mark A. Fodor , Christopher Lane , Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
发明人： David W. Cheung , Mark A. Fodor , Christopher Lane , Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
IPC分类号： C23C16/458 , H01L21/683 , H05B6/10 , B32B3/00
CPC分类号： C23C16/4586 , H01L21/6831 , Y10T428/24926
摘要： A ceramic susceptor with an embedded metal electrode. The metal electrode has multiple apertures, and the ceramic material is cross-linked through the apertures. An electrical connection to the electrode protects the electrode from the environment in the processing chamber. The ceramic may be aluminum nitride, and the metal electrode may be a mesh of molybdenum wires. To form the electrical connection, the susceptor may be heated until an eutectic forms between a conductive connector and the metal electrode. Alternately, a brazing material may be placed between the metal layer and a conductive connector.
摘要翻译：具有嵌入式金属电极的陶瓷感受体。金属电极具有多个孔，陶瓷材料通过孔交联。与电极的电连接保护电极免受处理室中的环境的影响。陶瓷可以是氮化铝，金属电极可以是钼丝网。为了形成电连接，基座可以被加热直到在导电连接器和金属电极之间形成共晶体。或者，钎焊材料可以放置在金属层和导电连接器之间。

4. 发明授权

US5794838A Ceramics joined body and method of joining ceramics 失效
标题翻译：陶瓷加入陶瓷的机体和方法
公开(公告)号：US5794838A
公开(公告)日：1998-08-18
申请号：US679286
申请日：1996-07-12
申请人： Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
发明人： Ryusuke Ushikoshi , Hideyoshi Tsuruta , Tomoyuki Fujii
IPC分类号： C04B37/00 , C04B37/02 , B23K31/02 , B23K103/16
CPC分类号： C04B37/006 , C04B37/026 , C04B2237/08 , C04B2237/121 , C04B2237/122 , C04B2237/123 , C04B2237/124 , C04B2237/126 , C04B2237/127 , C04B2237/343 , C04B2237/366 , C04B2237/402 , C04B2237/403 , C04B2237/405 , C04B2237/592 , C04B2237/62 , C04B2237/72 , C04B2237/76 , C04B2237/80 , C04B2237/84 , C04B2237/86
摘要： Novel method of joining ceramics containing aluminum nitride and another member made of a metal or a ceramic is provided having an improved joining strength and a corrosion-resistant property by joining a first member made of a ceramics consisting of an aluminum compound. The second member is made of a ceramics or a metal, forming a metal film directly on a surface to be joined of the first member interposing a metallic joining material which is made of a different material from the metal film. The metallic joining material is between the metal film and the second member, and by heating at least the metallic joining material and the metal film in such an interposed state to form a joining layer made of the metallic joining material and an intermetallic compound between the first and second members, so as to join the two members.
摘要翻译：通过将由铝化合物构成的陶瓷构成的第一构件接合，提供了接合含有氮化铝的陶瓷和由金属或陶瓷制成的另一构件的新型方法，其具有改善的接合强度和耐腐蚀性。第二构件由陶瓷或金属制成，在第一构件的待接合表面上直接形成金属膜，该金属接合材料由与金属膜不同的材料制成。金属接合材料在金属膜和第二构件之间，并且通过在这种插入状态下至少加热金属接合材料和金属膜，以形成由金属接合材料制成的接合层和金属间化合物和第二名成员，以加入两个成员。

5. 发明申请

US20070146961A1 ELECTROSTATIC CHUCK 审中-公开
标题翻译：静电卡
公开(公告)号：US20070146961A1
公开(公告)日：2007-06-28
申请号：US11611905
申请日：2006-12-18
申请人： Ikuhisa Morioka , Hideyoshi Tsuruta , Tetsuya Kawajiri , Takeru Torigoe
发明人： Ikuhisa Morioka , Hideyoshi Tsuruta , Tetsuya Kawajiri , Takeru Torigoe
IPC分类号： H01L21/683
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6875
摘要： An electrostatic chuck includes: a base body; an electrode formed on the base body and generating coulomb force; and a dielectric layer formed on the base body and electrode, having a plurality of projections on a first main face on the side supporting a substrate attracted by the coulomb force, and supporting the substrate on the upper surfaces of these projections. The projections are arranged at substantially uniform intervals. The surface roughness (Ra) of the projection upper faces is 0.5 μm or smaller. The height of the projections is 5 to 20 μm. The relation A1/2×B2>200 is satisfied where A (number/100 cm2) is the number of the projections per unit area of 100 cm2 in the first main face, and B (μm) is the height of the projections.
摘要翻译：静电卡盘包括：基体; 形成在基体上并产生库仑力的电极; 以及形成在基体和电极上的电介质层，在支撑被库仑力吸引的基板的一侧的第一主面上具有多个突起，并且将基板支撑在这些突起的上表面上。突起以大致均匀的间隔布置。投影面的表面粗糙度（Ra）为0.5μm以下。突起的高度为5至20毫米。满足关系A <1/2>×B <2> 200，其中A（数/ 100cm 2）是每单位的突起数第一主面的面积为100cm 2，B（mum）是突起的高度。

6. 发明申请

US20060191879A1 Plasma processing member 有权
公开(公告)号：US20060191879A1
公开(公告)日：2006-08-31
申请号：US11361177
申请日：2006-02-24
申请人： Yasumitsu Tomita , Hideyoshi Tsuruta
发明人： Yasumitsu Tomita , Hideyoshi Tsuruta
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32532 , H01J37/32009 , H01J37/32577 , H01J2237/0206
摘要： A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25Ω or less.

7. 发明授权

US07044399B2 Heating systems 有权
标题翻译：加热系统
公开(公告)号：US07044399B2
公开(公告)日：2006-05-16
申请号：US10702131
申请日：2003-11-05
申请人： Yoshinobu Goto , Hideyoshi Tsuruta
发明人： Yoshinobu Goto , Hideyoshi Tsuruta
IPC分类号： F24H3/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , C23C16/46
摘要： A heating system 1 has a ceramic substrate 2 having a mounting face 2a for mounting an object W, a back face 2b and a side face 2c; a heating means 3 for generating heat from the mounting face 2a of the ceramic substrate 2; and a plate-shaped supporting metal member 4 for supporting the back face 2b of the ceramic substrate 2. According to the system, the thermal deformation of the mounting face upon heating over time may be reduced and the flatness of the object may be maintained at a low value. It is further possible to impart a mechanical strength to the heater sufficient for its handling and to reduce the production cost.
摘要翻译：加热系统1具有陶瓷基板2，陶瓷基板2具有用于安装物体W的安装面2a，背面2b和侧面2c; 用于从陶瓷基板2的安装面2a产生热量的加热装置3; 以及用于支撑陶瓷基板2的背面2b的板状支撑金属构件4。根据该系统，随着时间的推移，安装面的加热变形可能降低，并且物体的平坦度可以维持在较低的值。进一步可能赋予加热器机械强度足以使其处理并降低生产成本。

8. 发明授权

US07042697B2 Electrostatic chucks and electrostatically attracting structures 有权
标题翻译：静电吸盘和静电吸引结构
公开(公告)号：US07042697B2
公开(公告)日：2006-05-09
申请号：US10675524
申请日：2003-09-30
申请人： Hideyoshi Tsuruta , Naohito Yamada
发明人： Hideyoshi Tsuruta , Naohito Yamada
IPC分类号： H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck includes a substrate having a wafer-installing face and an opposed back face. An electrostatic chucking electrode is buried in the substrate, and an insulating layer is provided on the back face of the substrate. The substrate also includes a dielectric layer including at least the wafer-installing face and surrounding the electrostatic chucking electrode, and the insulating layer includes an insulating material having a larger volume resistivity than that of the dielectric layer.
摘要翻译：静电卡盘包括具有晶片安装面和相对背面的基板。将静电吸附电极埋设在基板中，在基板的背面设置绝缘层。基板还包括至少包括晶片安装面并且围绕静电吸附电极的电介质层，并且绝缘层包括具有比电介质层的电阻率更大的体积电阻率的绝缘材料。

9. 发明授权

US07022947B2 Systems for supporting ceramic susceptors 有权
标题翻译：支撑陶瓷感受体的系统
公开(公告)号：US07022947B2
公开(公告)日：2006-04-04
申请号：US10884294
申请日：2004-07-02
申请人： Kazuaki Yamaguchi , Yoshinobu Goto , Hideyoshi Tsuruta
发明人： Kazuaki Yamaguchi , Yoshinobu Goto , Hideyoshi Tsuruta
IPC分类号： F27B5/14
CPC分类号： H01L21/67103 , F27B17/0025 , F27D5/0037 , H05B3/143
摘要： A support structure for supporting a ceramic susceptor in a chamber is provided. The support structure includes a supporting portion joined with a back face of the ceramic susceptor. The supporting portion includes an inner space that is separated from the atmosphere of the chamber. A cooling system is provided below the supporting portion 6. At least one thermal control portion is provided between the cooling system and the supporting portion for reducing thermal conduction from the susceptor to the cooling system.
摘要翻译：提供了用于在腔室中支撑陶瓷基座的支撑结构。支撑结构包括与陶瓷基座的后表面连接的支撑部分。支撑部分包括与腔室的气氛分离的内部空间。冷却系统设置在支撑部分6的下方。至少一个热控制部分设置在冷却系统和支撑部分之间，用于减少从基座到冷却系统的热传导。

10. 发明授权

US06800576B2 Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses 有权
标题翻译：氮化铝烧结体及半导体制造装置用部件
公开(公告)号：US06800576B2
公开(公告)日：2004-10-05
申请号：US10020499
申请日：2001-12-14
申请人： Yuji Katsuda , Hideyoshi Tsuruta
发明人： Yuji Katsuda , Hideyoshi Tsuruta
IPC分类号： C04B35581
CPC分类号： H01L23/15 , C04B35/581 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2235/963 , H01L21/6833 , H01L2924/0002 , Y10T279/23 , H01L2924/00
摘要： An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 &mgr;m. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 &OHgr;·cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.
摘要翻译：氮化铝烧结体包含氮化铝作为主要成分，至少一种稀土金属元素的量为不少于0.4mol％且不大于2.0mol％，以其氧化物和氧化铝组分的形式计算其量不小于0.5mol％且不大于2.0mol％。烧结体的Si含量不大于80ppm，氮化铝颗粒的平均粒径不大于3μm。即使在例如300-500℃的高温范围内，氮化铝烧结体几乎不剥离氮化铝颗粒，并且表现出至少10 8Ωg·cm的高电阻率以及相对高的导热性。

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