专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08821636B2 Single-crystal manufacturing apparatus 有权
标题翻译：单晶制造装置
公开(公告)号：US08821636B2
公开(公告)日：2014-09-02
申请号：US12936450
申请日：2009-04-24
申请人： Takao Abe , Kouzou Yokota , Kouji Mizuishi
发明人： Takao Abe , Kouzou Yokota , Kouji Mizuishi
IPC分类号： C30B15/02 , C30B15/14 , C30B29/06 , C30B15/00 , C30B35/00
CPC分类号： C30B15/14 , C30B15/00 , C30B29/06 , C30B35/00 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068
摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.
摘要翻译：本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔，该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率水晶要改善。

2. 发明申请

US20110030612A1 SINGLE-CRYSTAL MANUFACTURING APPARATUS 有权
标题翻译：单晶制造设备
公开(公告)号：US20110030612A1
公开(公告)日：2011-02-10
申请号：US12936450
申请日：2009-04-24
申请人： Takao Abe , Kouzou Yokota , Kouji Mizuishi
发明人： Takao Abe , Kouzou Yokota , Kouji Mizuishi
IPC分类号： C30B15/00 , C30B15/10 , C30B15/14
CPC分类号： C30B15/14 , C30B15/00 , C30B29/06 , C30B35/00 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068
摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.
摘要翻译：本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔，该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率水晶要改善。

3. 发明授权

US4916955A Crystal ingot lifting load measuring device 失效
标题翻译：水晶锭提升载荷测量装置
公开(公告)号：US4916955A
公开(公告)日：1990-04-17
申请号：US230777
申请日：1988-08-10
申请人： Nobuo Katsuoka , Kouji Mizuishi , Yoshihiro Hirano , Kenichi Sato , Seiichiro Otsuka
发明人： Nobuo Katsuoka , Kouji Mizuishi , Yoshihiro Hirano , Kenichi Sato , Seiichiro Otsuka
IPC分类号： G01G19/18 , C30B15/28 , C30B15/30 , G01G3/14
CPC分类号： C30B15/28 , C30B15/30 , Y10T117/1004 , Y10T117/1072
摘要： A load measuring device for measuring the pulling up load of a monocystalline rod (38) grown by the Czochralski method utilizes a strain gauge (20). The monocrystalline rod (38) is pulled up by wire rope (36) consisting of multiple strands. The pulley (34) guiding the wire rope between a drum (36) and a crystal holder (44) has a guide groove which has a cross-sectional shape which is substantially identical to a semicircle circumscribing the wire rope.

4. 发明授权

US5900058A Apparatus for producing single crystal 失效
标题翻译：单晶制造装置
公开(公告)号：US5900058A
公开(公告)日：1999-05-04
申请号：US759224
申请日：1996-12-05
申请人： Kouji Mizuishi , Atsushi Iwasaki
发明人： Kouji Mizuishi , Atsushi Iwasaki
IPC分类号： C30B15/00 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1064
摘要： An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum breaker. The structure prevents the sealing water in the bubbler from flowing backward, so that danger of steam explosion can be avoided.
摘要翻译：公开了一种通过Czochralski法制造单晶的装置，其中排气系统设置有水密封起泡器。在起泡器的上游侧设有缓冲器或真空断路器或缓冲器和真空断路器。该结构防止起泡器中的密封水向后流动，从而可以避免蒸汽爆炸的危险。

5. 发明授权

US5833750A Crystal pulling apparatus 失效
标题翻译：水晶拉机
公开(公告)号：US5833750A
公开(公告)日：1998-11-10
申请号：US760984
申请日：1996-12-05
申请人： Kouji Mizuishi , Shigemaru Maeda
发明人： Kouji Mizuishi , Shigemaru Maeda
IPC分类号： C30B15/32 , C30B29/06 , C30B35/00
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1072
摘要： A crystal pulling apparatus is disclosed in which a single crystal ingot is pulled from a melt of a crystalline material by using a cable. A crimp portion and a spherical portion supported by the crimp portion are provided in the vicinity of the tip of the cable. Two divided couplings are screwed into a chuck body of a seed chuck. The couplings have an accommodation space therein so as to accommodate the cable and the spherical portion, and conical hole sections serving as the shoulder portion of the accommodation space contact and hold the spherical portion. This structure allows the cable to rotate during crystal pulling operation and facilitates attachment of the seed chuck to the cable and removal of the seed chuck from the cable.
摘要翻译：公开了一种拉晶装置，其中通过使用电缆将单晶锭从结晶材料的熔体中拉出。在电缆的尖端附近设置有由压接部支撑的卷曲部分和球形部分。将两个分开的联接器拧入种子卡盘的卡盘体中。联接器在其中具有容纳电缆和球形部分的容纳空间，并且用作容纳空间的肩部的锥形孔部分接触并保持球形部分。这种结构允许电缆在晶体拉动操作期间旋转，并且便于将种子卡盘附接到电缆并且从电缆去除种子卡盘。

6. 发明授权

US5938841A Device for producing a single crystal 失效
标题翻译：用于生产单晶的装置
公开(公告)号：US5938841A
公开(公告)日：1999-08-17
申请号：US754784
申请日：1996-11-21
申请人： Kouji Kitagawa , Kouji Mizuishi , Masahiko Urano , Kenji Araki , Eiichi Iino , Izumi Fusegawa
发明人： Kouji Kitagawa , Kouji Mizuishi , Masahiko Urano , Kenji Araki , Eiichi Iino , Izumi Fusegawa
IPC分类号： C30B15/30 , C30B29/06 , C30B30/04 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/917 , Y10T117/1032
摘要： A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.
摘要翻译：提供了一种用于通过CZ或MCZ方法制造单晶的新型装置，其包括用于在其中包含硅熔体的坩埚，用于拉出单晶的线卷轴和线，电动机和用于旋转坩埚的旋转轴，插入在电机和旋转轴之间的变速装置，如果需要的话，将磁场施加到熔体上的磁场发生器。根据用于制造单晶的装置，能够提高坩埚的旋转精度，能够高精度地控制拉伸单晶中的杂质浓度。

7. 发明授权

US5879451A Apparatus for measuring weight of crystal being pulled 失效
标题翻译：用于测量被拉动的晶体重量的装置
公开(公告)号：US5879451A
公开(公告)日：1999-03-09
申请号：US763890
申请日：1996-12-11
申请人： Kouji Mizuishi
发明人： Kouji Mizuishi
IPC分类号： G01G3/12 , C30B15/28 , C30B15/30 , G01G19/18 , H01L21/208 , C30B35/00
CPC分类号： C30B15/28 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： An apparatus for measuring the weight of a crystal in a cable-type crystal pulling apparatus. A cable winding mechanism of the crystal pulling apparatus includes a guide pulley which is supported by a load plate and which changes the direction of the cable by 180 degrees, and a winding drum 8 which is disposed on a base plate and onto which the cable is wound. The load plate, on which a load due to pulling acts, is supported by a plurality of small-load load cells so that the load is equally distributed to the small-load load cells. Thus, the weight measuring apparatus can have a simple and low-cost structure, and the accuracy of measurement can be improved.
摘要翻译：一种用于测量电缆型拉晶装置中的晶体重量的装置。晶体牵引装置的电缆缠绕机构包括由负载板支撑并将电缆的方向改变180度的引导滑轮和设置在基板上的卷绕鼓8，电缆线伤口。由于牵引作用而产生的负载的负载板由多个小负载称重传感器支撑，使得负载被均等地分配给小负载传感器。因此，重量测量装置可以具有简单且低成本的结构，并且可以提高测量的精度。

8. 发明授权

US06458201B2 Apparatus for producing single crystals and method for producing single crystals 失效
标题翻译：单晶制造装置及单晶制造方法
公开(公告)号：US06458201B2
公开(公告)日：2002-10-01
申请号：US09485721
申请日：2000-02-15
申请人： Kouji Kitagawa , Kouji Mizuishi
发明人： Kouji Kitagawa , Kouji Mizuishi
IPC分类号： C30B1530
CPC分类号： C30B15/30 , Y10T117/1072
摘要： There are provided an apparatus for producing single crystals and a method for producing single crystals, which can absorb and eliminate vibration generated by a crucible rotation driving motor, or prevent transmission of the vibration to a melt, or attenuate the vibration in the production of single crystals by the CZ method. The apparatus for producing single crystals comprises a crucible for accommodating a raw material melt, a mechanism for pulling a crystal from the melt, a mechanism for rotating the crucible, and a transfer mechanism for vertically moving the crucible, wherein, in the rotation mechanism for the crucible, a ball spline is used for power transmission between a crucible-supporting shaft and a crucible rotation driving unit, and the crucible rotation driving unit is fixedly installed on a substructure of the apparatus for producing single crystals. Further, single crystals are produced by using the apparatus.
摘要翻译：提供了单晶的制造装置和单晶的制造方法，其能够吸收和消除由坩埚旋转驱动电动机产生的振动，或者防止振动向熔体传递，或者减少单次生产中的振动晶体采用CZ法。用于生产单晶的装置包括用于容纳原料熔体的坩埚，用于从熔体中拉出晶体的机构，用于使坩埚旋转的机构，以及用于使坩埚垂直移动的传送机构，其中，在用于坩埚，滚珠花键用于坩埚支撑轴和坩埚旋转驱动单元之间的动力传递，并且坩埚旋转驱动单元固定地安装在用于生产单晶的装置的子结构上。此外，通过使用该装置制造单晶。

9. 发明授权

US5126113A Apparatus for producing czochralski-grown single crystals 失效
公开(公告)号：US5126113A
公开(公告)日：1992-06-30
申请号：US677172
申请日：1991-03-29
申请人： Hirotoshi Yamagishi , Kouji Mizuishi , Fumihiko Hasegawa
发明人： Hirotoshi Yamagishi , Kouji Mizuishi , Fumihiko Hasegawa
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/90 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for producing a single crystal ingot grown by the Czochralski method includes a plurality of grip arms each having a grip finger engageable with a downwardly facing engagement step formed on an upper part of the single crystal, and a ring slidably fitted around a plurality of grip arms to hold the grip arms in a closed position in which the engagement step of the single crystal is firmly gripped by the grip fingers against detachment. The apparatus having such a ring is particularly advantageous when used for the production of a heavy single crystal ingot in which the grip arms are forced to spread apart by the weight of the single crystal ingot.

10. 发明授权

US4886647A Supporting apparatus for semiconductor crystal rod 失效
标题翻译：半导体晶体棒支撑装置
公开(公告)号：US4886647A
公开(公告)日：1989-12-12
申请号：US133791
申请日：1987-12-16
申请人： Yasuhiro Ikeda , Kouji Mizuishi
发明人： Yasuhiro Ikeda , Kouji Mizuishi
IPC分类号： C30B13/32 , C30B13/28
CPC分类号： C30B13/285 , Y10S117/90 , Y10S117/911 , Y10T117/1084
摘要： A supporting apparatus for a semiconductor noncrystal rod comprises a movable ring adapted to move freely in horizontal directions unless it is engaged with the monocrystal rod, a lock means to prevent the movable ring from horizontally moving, and a drive means to elevate the movable ring.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式