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1. 发明申请

US20110017586A1 Method for forming silicon oxide film, storage medium, and plasma processing apparatus 审中-公开
标题翻译：形成氧化硅膜，存储介质和等离子体处理装置的方法
公开(公告)号：US20110017586A1
公开(公告)日：2011-01-27
申请号：US12805301
申请日：2010-07-22
申请人： Hideo Nakamura , Yoshiro Kabe , Junichi Kitagawa
发明人： Hideo Nakamura , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： H01L21/02 , B05C5/02
CPC分类号： H01L27/11521 , H01J37/32192 , H01J37/3222 , H01L21/02238 , H01L21/28211 , H01L21/31662 , H01L21/32105 , H01L21/76235 , H01L21/823468 , H01L29/42372 , H01L29/7881
摘要： In oxidation of a silicon having irregularities, a silicon oxide film having a thickness as small as possible is formed in the side wall as compared with the bottom. A plasma is generated, using a plasma processing apparatus (100) which introduces microwave into a chamber (1) through a plane antenna (31) having plural microwave radiating holes (32), while applying a high-frequency power to a stage (2), under the conditions that the proportion of oxygen in the processing gas is in the range of 0.1 to 50% and the processing pressure is in the range of 1.3 to 667 Pa. By using this plasma, the ratio of the thickness of the silicon oxide film formed on the side wall surfaces of the irregularities to the thickness of the silicon oxide film formed on the bottom wall surfaces of the recessed portions of the irregularities is made not more than 0.6, while the thickness of the silicon oxide films formed on the bottom wall surfaces is not less than 6 nm and not more than 20 nm.
摘要翻译：在具有凹凸的硅的氧化中，与底部相比，在侧壁中形成厚度尽可能小的氧化硅膜。使用等离子体处理装置（100）等离子体，其通过具有多个微波辐射孔（32）的平面天线（31）将微波引入室（1），同时向载物台（2）施加高频电力），处理气体中的氧的比例为0.1〜50％，处理压力为1.3〜667Pa的范围的条件下，通过使用该等离子体，硅的厚度形成在不规则部分的侧壁表面上的氧化膜与形成在凹凸部的凹部的底壁表面上的氧化硅膜的厚度成比例不大于0.6，而形成在氧化硅膜上的氧化硅膜的厚度底壁面不小于6nm且不大于20nm。

2. 发明申请

US20110024048A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110024048A1
公开(公告)日：2011-02-03
申请号：US12935392
申请日：2009-03-31
申请人： Hideo Nakamura , Jun Yamashita , Junichi Kitagawa , Yoshiro Kabe , Yoshinori Fukuda
发明人： Hideo Nakamura , Jun Yamashita , Junichi Kitagawa , Yoshiro Kabe , Yoshinori Fukuda
IPC分类号： H01L21/306 , C23F1/08 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32091 , H01J37/32559 , H01J37/32633
摘要： In a plasma oxidation processing apparatus (100) which supplies a high-frequency bias power to an electrode (7) embedded in a stage (5), the interior surface, which is to be exposed to a plasma, of an aluminum lid (27) which functions as an opposite electrode for the stage (5) is coated with a silicon film (48) as a protective film. Positioned adjacent to the silicon film (48), an upper liner (49a) and a thicker lower liner (49b) are provided on the interior surfaces of a second container (3) and a first container (2). This prevents a short circuit or abnormal electrical discharge to the interior surfaces, making it possible to form a proper high-frequency current path and enhance the efficiency of power consumption.
摘要翻译：在等离子体氧化处理装置（100）中，该等离子体氧化处理装置（100）向嵌入在载物台（5）中的电极（7）提供高频偏置功率，即将暴露于等离子体的铝表面（27））作为用于载物台（5）的相对电极，被涂覆有作为保护膜的硅膜（48）。在第二容器（3）和第一容器（2）的内表面上设置有邻近硅膜（48）的上衬垫（49a）和较厚的下衬套（49b）。这防止了内部表面的短路或异常放电，使得可以形成适当的高频电流路径并提高功耗的效率。

3. 发明授权

US08389420B2 Method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US08389420B2
公开(公告)日：2013-03-05
申请号：US13074062
申请日：2011-03-29
申请人： Yoshiro Kabe , Hideo Nakamura , Junichi Kitagawa
发明人： Yoshiro Kabe , Hideo Nakamura , Junichi Kitagawa
IPC分类号： H01L21/31
CPC分类号： H01L21/31662 , H01J37/32192 , H01J37/32449 , H01L21/02236 , H01L21/02238 , H01L21/02252 , H01L21/28211 , H01L21/28273 , H01L21/28282 , H01L29/513 , H01L29/518 , H01L29/7881 , H01L29/792
摘要： A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cm2 to 2.13 W/cm2 per unit area of the workpiece.
摘要翻译：在暴露在工件表面上的硅上形成氧化硅膜的方法包括将工件安装在处理室中的安装台上; 通过将处理气体供给到处理室来产生含氧工艺气体的等离子体; 通过向安装台提供高频电力向工件施加偏压; 以及通过将等离子体施加到偏置的工件并氧化硅来形成氧化硅膜。处理气体中的氧的比例设定在0.1％〜10％的范围内。处理室中的压力在形成氧化硅膜时设定在1.3Pa至266.6Pa的范围内。将高频功率的输出设定为每单位面积的工件的0.14W / cm 2〜2.13W / cm 2的范围。

4. 发明申请

US20120094505A1 METHOD FOR SELECTIVE OXIDATION, DEVICE FOR SELECTIVE OXIDATION, AND COMPUTER-READABLE MEMORY MEDIUM 审中-公开
标题翻译：选择性氧化方法，选择性氧化装置和计算机可读存储介质
公开(公告)号：US20120094505A1
公开(公告)日：2012-04-19
申请号：US13376678
申请日：2010-07-26
申请人： Hideo Nakamura , Yoshiro Kabe , Kazuhiro Isa , Junichi Kitagawa
发明人： Hideo Nakamura , Yoshiro Kabe , Kazuhiro Isa , Junichi Kitagawa
IPC分类号： H01L21/316 , B05C11/00 , C23C16/50
CPC分类号： H01L21/28247 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L29/40117 , H01L29/66833
摘要： A selective oxidation treatment method in which plasma of a hydrogen gas and an oxygen containing gas is allowed to act on an object to be treated, and in which silicon and a metallic material are exposed in the surface, within a treatment container of a plasma treatment apparatus comprises: after the supply of the hydrogen gas from a hydrogen gas supply source is initiated by using a first inert gas, which passes through a first supply path, as a carrier gas, initiating the supply of the oxygen containing gas from an oxygen containing gas supply source by using a second inert gas, which passes through a second supply path, as a carrier gas before the plasma is ignited; igniting the plasma of a treatment gas including the oxygen containing gas and the hydrogen gas within the treatment container; and selectively oxidizing the silicon by the plasma.
摘要翻译：一种选择性氧化处理方法，其中允许氢气和含氧气体的等离子体在等离子体处理的处理容器内作用于被处理物体，并且其中硅和金属材料暴露在表面中装置包括：在通过使用通过第一供应路径的第一惰性气体作为载气开始从氢气供应源供应氢气之后，开始从含氧气体供应含氧气体在等离子体点燃之前通过使用通过第二供给路径的第二惰性气体作为载气的气体供给源; 点燃处理容器内包含含氧气体和氢气的处理气体的等离子体; 并通过等离子体选择性地氧化硅。

5. 发明授权

US08119530B2 Pattern forming method and semiconductor device manufacturing method 有权
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US08119530B2
公开(公告)日：2012-02-21
申请号：US12521184
申请日：2007-12-20
申请人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02252 , H01L21/30604 , H01L21/3065 , H01L21/31111 , H01L21/31116 , H01L29/66818
摘要： A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.
摘要翻译：图案形成方法包括制备包括硅的目标物体，其中形成有初始图案并具有第一线宽度; 在等离子体处理装置的处理室内的硅表面上进行等离子体氧化处理，由此在初始图案的表面上形成氧化硅膜; 并除去氧化硅膜。图案形成方法被配置为反复进行氧化硅膜的形成和氧化硅膜的去除，以形成目标物体上具有比第一线宽窄的第二线宽的物镜图案。

6. 发明授权

US08026187B2 Method of forming silicon oxide film and method of production of semiconductor memory device using this method 有权
标题翻译：使用该方法形成氧化硅膜的方法和半导体存储器件的制造方法
公开(公告)号：US08026187B2
公开(公告)日：2011-09-27
申请号：US12550788
申请日：2009-08-31
申请人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
发明人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02252 , H01L21/02337 , H01L21/31654 , H01L21/67115 , H01L29/4234 , H01L29/513 , H01L29/7881 , H01L29/792
摘要： To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.
摘要翻译：为了形成具有优异的Qbd特性和Rd特性的优质氧化硅膜，将晶片W装载到等离子体处理装置中，其中通过等离子体氧化处理晶片W的硅层501的表面以形成在硅层501形成膜厚T1，形成氧化硅膜503.接着，将形成有氧化硅膜503的晶片W转移到热氧化处理装置中，通过热氧化处理氧化硅膜503，形成具有目标膜厚度T2的氧化硅膜505。

7. 发明授权

US07989364B2 Plasma oxidation processing method 有权
标题翻译：等离子体氧化处理方法
公开(公告)号：US07989364B2
公开(公告)日：2011-08-02
申请号：US12439019
申请日：2007-08-27
申请人： Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
发明人： Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： H01L21/469
CPC分类号： H01L21/31662 , C23C8/10 , C23C8/36 , H01L21/02238 , H01L21/02252 , H01L22/20
摘要： A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.
摘要翻译：进行等离子体氧化处理，通过使用从含有氧气的工艺气体产生的O（1D2）自由基密度为1×10 12 [cm -3]以上的等离子体，在目标物体的表面上形成氧化硅膜等离子体处理装置的处理室。在等离子体氧化过程中，通过VUV单色仪63测量等离子体中的O（1D2）自由基密度，并对等离子体处理条件进行校正。

8. 发明申请

US20100291319A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100291319A1
公开(公告)日：2010-11-18
申请号：US12680645
申请日：2008-09-29
申请人： Jun Yamashita , Yoshiro Kabe , Junichi Kitagawa
发明人： Jun Yamashita , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： C23C16/511 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32495
摘要： A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table.
摘要翻译：提供了一种用于等离子体处理目标衬底的等离子体处理装置。等离子体处理装置包括形成进行等离子体处理的处理空间的金属处理容器和设置在处理空间中的用于将目标基板安装在其上的基板安装台，屏蔽金属处理容器的侧壁的石英构件从所述处理空间的下端延伸到比所述基板安装台的基板安装面低的位置的环状部件，所述环状部件由石英制成，并且设置在所述石英部件的底面与所述金属处理容器，用于将金属处理容器的底壁与处理空间隔离;以及处理气体入口部，用于将处理气体从基板安装台的外周附近引入处理空间。

9. 发明授权

US08003484B2 Method for forming silicon oxide film, plasma processing apparatus and storage medium 失效
标题翻译：氧化硅膜形成方法，等离子体处理装置和存储介质
公开(公告)号：US08003484B2
公开(公告)日：2011-08-23
申请号：US12443044
申请日：2007-09-28
申请人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/76
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/31662 , H01L21/76224 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, which has excellent insulating properties and higher quality that can enhance a yield in manufacture of semiconductor devices, while keeping advantageous points in a plasma oxidation process. In this method, plasma is generated under a first process condition that a ratio of oxygen in a processing gas is 1% or less and pressure is within a range of 0.133 to 133 Pa, so as to form the silicon oxide film, by oxidizing silicon on a surface of an object to be processed including silicon as a main component, by using the plasma (first oxidation step). Following the first oxidation step, the plasma is generated under a second process condition that the ratio of oxygen in the processing gas is 20% or more and the pressure is within a range of 400 to 1333 Pa, so as to form an additional silicon oxide film, by further oxidizing the surface of the object to be processed, by using the plasma (second oxidation step).
摘要翻译：本发明提供了一种形成氧化硅膜的方法，其具有优异的绝缘性能和更高的质量，可以提高半导体器件制造的成品率，同时保持等离子体氧化工艺中的优点。在该方法中，在处理气体中的氧比例为1％以下，压力为0.133〜133Pa的范围的第一工序的情况下，生成等离子体，以形成氧化硅膜，氧化硅通过使用等离子体（第一氧化步骤）在被处理对象物的表面上，以硅为主要成分。在第一氧化步骤之后，在处理气体中的氧的比例为20％以上且压力为400〜1333Pa的范围的第二工序的条件下生成等离子体，从而形成附加的氧化硅通过使用等离子体（第二氧化步骤）进一步氧化待处理物体的表面。

10. 发明授权

US08034179B2 Method for insulating film formation, storage medium from which information is readable with computer, and processing system 失效
标题翻译：绝缘膜形成方法，计算机可读取信息的存储介质和处理系统
公开(公告)号：US08034179B2
公开(公告)日：2011-10-11
申请号：US12865969
申请日：2009-02-06
申请人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
发明人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/402 , C23C16/45565 , C23C16/511 , H01L21/02164 , H01L21/02238 , H01L21/02271 , H01L21/02304 , H01L21/28008 , H01L21/31612 , H01L21/31654 , H01L29/4908 , H01L29/513 , H01L29/66765
摘要： In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.
摘要翻译：为了通过CVD形成与硅形成平坦界面的绝缘膜，使用等离子体处理装置将硅的表面氧化形成氧化硅膜，其中微波通过具有多个孔。通过CVD在氧化硅膜上形成氧化硅膜作为绝缘膜。此外，在等离子体处理装置中，将含有惰性气体和氧气的处理气体引入室内，并且还通过平板天线将微波引入室内。在不低于6.7Pa且不大于533Pa的压力下产生等离子体，以便用等离子体改性绝缘膜。

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