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1. 发明授权

US08093635B2 Solid-state imaging element 有权
标题翻译：固态成像元件
公开(公告)号：US08093635B2
公开(公告)日：2012-01-10
申请号：US12076792
申请日：2008-03-24
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

2. 发明授权

US08097486B2 Method for producing a solid-state imaging element 有权
标题翻译：固体摄像元件的制造方法
公开(公告)号：US08097486B2
公开(公告)日：2012-01-17
申请号：US12656925
申请日：2010-02-19
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

3. 发明申请

US20100167450A1 Solid-state imaging element and method for producing the same 有权
标题翻译：固态成像元件及其制造方法
公开(公告)号：US20100167450A1
公开(公告)日：2010-07-01
申请号：US12656925
申请日：2010-02-19
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

4. 发明申请

US20080237666A1 Solid-state imaging element and method for producing the same 有权
标题翻译：固态成像元件及其制造方法
公开(公告)号：US20080237666A1
公开(公告)日：2008-10-02
申请号：US12076792
申请日：2008-03-24
申请人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
发明人： Hideo Kido , Kazuichiro Itonaga , Kai Yoshitsugu , Kenichi Chiba
IPC分类号： H01L31/062 , H01L31/18
CPC分类号： H01L27/14689 , H01L31/0224
摘要： There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
摘要翻译：提供了一种固态成像元件，其具有通过光照射产生电荷的光接收部分和形成在半导体层中的晶体管的源极/漏极区域。固体摄像元件包括：包含光接收部分的非硅化区域，其中源极/漏极区域和晶体管的栅电极的表面不被硅化; 以及其中晶体管的源极/漏极区域和栅极电极的表面被硅化的硅化区域。非硅化区域具有形成在晶体管的栅电极的侧表面上的侧壁，形成为覆盖半导体层，栅极电极和侧壁的氢供应膜，以及形成在氢源上的自对准硅化物阻挡膜电影防止硅化。硅化区具有形成在晶体管的栅电极的侧表面上的侧壁。

5. 发明授权

US08957357B2 Solid-state imaging device, manufacturing method of the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US08957357B2
公开(公告)日：2015-02-17
申请号：US12728514
申请日：2010-03-22
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H01L27/146 , H01L31/10 , H01L31/103
CPC分类号： H01L27/14605 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/103
摘要： A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.
摘要翻译：固态成像装置包括多个光电二极管，其形成在单元像素的光电二极管区域中，其间没有元件分离区域，并且其中pn结区域的杂质浓度彼此不同。

6. 发明授权

US08638382B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US08638382B2
公开(公告)日：2014-01-28
申请号：US13609596
申请日：2012-09-11
申请人： Kazuichiro Itonaga , Shizunori Matsumoto
发明人： Kazuichiro Itonaga , Shizunori Matsumoto
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00 , H01L29/76 , H01L31/062 , H01L27/14 , H01L27/146
CPC分类号： H01L27/14812 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14647 , H01L27/14831 , H04N5/357 , H04N5/374 , H04N5/3745 , H04N5/37457 , H04N5/378 , H04N9/045
摘要： A solid-state imaging device with a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
摘要翻译：一种具有布局的固态成像装置，其中一个共享单元在水平和垂直方向上分别包括2像素×4×n个像素（其中，n为正整数）的光电二极管阵列。

7. 发明授权

US08169523B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US08169523B2
公开(公告)日：2012-05-01
申请号：US12491740
申请日：2009-06-25
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N3/14 , H04N5/335 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14641
摘要： A solid-state imaging device includes: a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.
摘要翻译：固态成像装置包括：光电转换部; 浮动扩散区; 由n型半导体制成的传输栅电极; 通过绝缘膜形成在所述传输栅电极的光电转换部分侧上的由n型半导体制成的侧壁; 以及由形成在传输栅电极的浮动扩散区侧上的绝缘层制成的侧壁。

8. 发明申请

US20100245637A1 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
标题翻译：固态成像装置及其制造方法以及电子装置
公开(公告)号：US20100245637A1
公开(公告)日：2010-09-30
申请号：US12656805
申请日：2010-02-17
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H04N5/2254 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643 , H01L27/14685
摘要： A solid-state imaging device includes: an on-chip color filter having color filter components formed to correspond to pixels; light-shielding members each formed at the boundary of adjacent color filter components; and lenses concave toward a light incident direction, each formed directly below a corresponding one of the color filter components by self-alignment with the light-shielding members as a mask.
摘要翻译：固态成像装置包括：具有形成为对应于像素的滤色器部件的片上滤色器; 遮光部件各自形成在相邻滤色器部件的边界处; 以及朝向光入射方向凹入的透镜，每个透镜通过与遮光构件的自对准作为掩模直接形成在相应的一个滤色器组件的下方。

9. 发明申请

US20090322919A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US20090322919A1
公开(公告)日：2009-12-31
申请号：US12491740
申请日：2009-06-25
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14641
摘要： A solid-state imaging device includes: a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.
摘要翻译：固态成像装置包括：光电转换部; 浮动扩散区; 由n型半导体制成的传输栅电极; 通过绝缘膜形成在所述传输栅电极的光电转换部分侧上的由n型半导体制成的侧壁; 以及由形成在传输栅电极的浮动扩散区侧上的绝缘层制成的侧壁。

10. 发明申请

US20090284630A1 SOLID-STATE IMAGING DEVICES AND ELECTRONIC DEVICES 失效
标题翻译：固态成像装置和电子装置
公开(公告)号：US20090284630A1
公开(公告)日：2009-11-19
申请号：US12464557
申请日：2009-05-12
申请人： Kazuichiro Itonaga
发明人： Kazuichiro Itonaga
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14645
摘要： A solid-state imaging device is disclosed. The solid-state image device has pixels in which an absorption film that absorbs short wavelength-side light is formed on a photoelectric conversion portion for desired color light through an insulation film.
摘要翻译：公开了一种固态成像装置。固态图像装置具有像素，其中通过绝缘膜在光电转换部分上形成吸收短波长侧光的吸收膜以获得所需的彩色光。

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