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1. 发明授权

US4674236A Polishing machine and method of attaching emery cloth to the polishing machine 失效
标题翻译：研磨机和抛光机附着砂布的方法
公开(公告)号：US4674236A
公开(公告)日：1987-06-23
申请号：US838584
申请日：1986-03-11
申请人： Hideo Kawakami , Shinichi Tazawa , Masami Endo , Masaharu Kinoshita
发明人： Hideo Kawakami , Shinichi Tazawa , Masami Endo , Masaharu Kinoshita
IPC分类号： B24B37/08 , B24B37/16 , B24B1/00
CPC分类号： B24B37/08 , B24B37/16 , B24B57/02
摘要： A polishing machine has an upper polishing plate and a lower polishing plate provided below the upper polishing plate. The upper polishing plate has slurry passages. Plugs for supplying slurry are detachably quick coupled to the slurry passages. A piece of polishing pad is bonded to the lower surface of the upper polishing plate. After a spent polishing pad has been removed and a fresh polishing pad has been attached to the lower surface of the upper polishing plate, a hole-cutter is downwardly inserted in each slurry passage until it pierces the fresh polishing pad, thus cutting a hole in the polishing pad.
摘要翻译：抛光机具有设置在上抛光板下方的上抛光板和下抛光板。上抛光板具有浆料通道。用于供应浆料的塞子可拆卸地快速地联接到浆料通道。一块抛光垫结合到上抛光板的下表面。在抛光抛光垫已经被去除并且新的抛光垫已经附着到上抛光板的下表面之后，孔切割器向下插入每个浆料通道中，直到它刺穿新鲜的抛光垫，从而在抛光垫。

2. 发明授权

US09293508B2 Semiconductor storage device and method of fabricating same 有权
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US09293508B2
公开(公告)日：2016-03-22
申请号：US14349386
申请日：2011-10-07
申请人： Yoshitaka Sasago , Masaharu Kinoshita
发明人： Yoshitaka Sasago , Masaharu Kinoshita
IPC分类号： H01L21/00 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2481 , H01L27/2409 , H01L27/2454 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/1683
摘要： A memory cell array having such a structure that can be realized with a simpler process and ideal for realizing a higher density is provided. Memory cells have a structure in which channel layers (88p and 89p) are formed on the side surfaces of each of a plurality of stacked structures which extends in the Y direction and is periodically formed in the X direction with a gate insulator film layer (9) interposed, and a resistance-change material layer (7) is formed so as to be electrically connected to two adjacent channel layers of the channel layers. Due to such a structure, it is not necessary to perform such a very difficult step that processes the resistance-change material and the silicons collectively and it is possible to provide the memory cell array with a simpler process.
摘要翻译：提供具有能够以更简单的处理实现并且实现更高密度的理想的具有这种结构的存储单元阵列。存储单元具有这样的结构，其中沟道层（88p和89p）形成在多个层叠结构中的每一个在Y方向上延伸并且沿X方向周期性地形成的栅极绝缘膜层（9 ），并且形成电阻变化材料层（7），以电连接到沟道层的两个相邻沟道层。由于这样的结构，不需要进行这样一个非常困难的步骤，即整体地处理电阻变化材料和硅，并且可以以更简单的工艺来提供存储单元阵列。

3. 发明授权

US08541768B2 Semiconductor device having stacked structural bodies and method for manufacturing the same 有权
标题翻译：具有层叠结构体的半导体装置及其制造方法
公开(公告)号：US08541768B2
公开(公告)日：2013-09-24
申请号：US13118402
申请日：2011-05-28
申请人： Akio Shima , Yoshitska Sasago , Toshiyuki Mine , Masaharu Kinoshita
发明人： Akio Shima , Yoshitska Sasago , Toshiyuki Mine , Masaharu Kinoshita
IPC分类号： H01L29/02
CPC分类号： H01L27/2454 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A technique used for a semiconductor device formed by stacking multiple structural bodies each having a semiconductor device, for preventing generation of thermal load on a structural body at a lower layer which is caused by a laser used in a step of forming a structural body at an upper layer. In a phase-change memory including multiple stacked memory matrices, a metal film is disposed between a memory matrix at a lower layer and a memory matrix at an upper layer formed over the memory matrix at the lower layer, in which the laser used for forming the memory matrix is reflected at the metal film and prevented from transmitting the metal film, thereby preventing the phase-change material layer, etc. in the memory matrix at the lower layer from being directly heated excessively by the laser.
摘要翻译：一种用于半导体器件的技术，该半导体器件通过堆叠多个具有半导体器件的结构体而形成，用于防止由在用于形成结构体的步骤中使用的激光器引起的下层的结构体上的热负荷的产生上层。在包括多个堆叠的存储器矩阵的相变存储器中，金属膜设置在下层的存储矩阵和在下层的存储矩阵上形成的上层的存储矩阵之间，其中用于形成的激光存储矩阵在金属膜处被反射并且防止金属膜透射，从而防止下层的存储矩阵中的相变材料层等被激光过度直接加热。

4. 发明授权

US08427865B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US08427865B2
公开(公告)日：2013-04-23
申请号：US13440225
申请日：2012-04-05
申请人： Akio Shima , Yoshitaka Sasago , Masaharu Kinoshita , Toshiyuki Mine , Norikatsu Takaura , Takahiro Morikawa , Kenzo Kurotsuchi , Satoru Hanzawa
发明人： Akio Shima , Yoshitaka Sasago , Masaharu Kinoshita , Toshiyuki Mine , Norikatsu Takaura , Takahiro Morikawa , Kenzo Kurotsuchi , Satoru Hanzawa
IPC分类号： G11C11/00 , H01L29/80
CPC分类号： H01L27/2481 , G11C13/0004 , G11C13/003 , G11C2213/71 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory.
摘要翻译：提供了能够进一步减小存储单元的尺寸并增加存储容量的半导体存储装置。每个包括形成在半导体衬底上的晶体管的多个存储单元以及具有由电压供应改变并连接在晶体管的源极和漏极端子之间的电阻值的可变电阻器件被纵向排列成阵列以构成三维存储器单元格阵列。存储单元结构具有双通道结构，其中开关晶体管的内部填充有可变电阻元件，特别是相变材料。通过施加电压来切换开关晶体管，以增加沟道电阻，使得电流在内部相变材料中流动以操作存储器。

5. 发明授权

US07996735B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07996735B2
公开(公告)日：2011-08-09
申请号：US12469778
申请日：2009-05-21
申请人： Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
发明人： Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
IPC分类号： G11C29/00
CPC分类号： G11C13/0064 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C29/028 , G11C29/50 , G11C29/50008 , G11C2013/0054 , G11C2213/72
摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.
摘要翻译：为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

6. 发明授权

US07327389B2 Apparatus and method for photographing three-dimensional image, apparatus and method for displaying three-dimensional image, and apparatus and method for converting three-dimensional image display position 有权
标题翻译：用于拍摄三维图像的装置和方法，用于显示三维图像的装置和方法，以及用于转换三维图像显示位置的装置和方法
公开(公告)号：US07327389B2
公开(公告)日：2008-02-05
申请号：US11183810
申请日：2005-07-19
申请人： Hideyoshi Horimai , Masaharu Kinoshita
发明人： Hideyoshi Horimai , Masaharu Kinoshita
IPC分类号： H05N5/228
CPC分类号： G03B35/02 , G02B27/2271 , G02B27/26 , H04N13/211
摘要： The present invention makes it possible to acquire image information required for displaying a three-dimensional image of an object in a space with a simple configuration and to achieve display of a stereoscopic dynamic image in a true sense with a simple configuration.Light from an object (10) impinges upon a deflecting plate (11). Among the incident beams of light, the deflecting plate (11) allows beams of light at a predetermined angle to the plane of the deflecting plate (11) to pass, the beams exiting as parallel beams of light perpendicular to the plane of the deflecting plate (11). The light passes through a converging lens (12), a pinhole member (13), and a converging lens (14) to impinge upon a CCD (15). An angle of incident light selected by the deflecting plate (11) is sequentially changed as time passes. Therefore, image information output by the CCD (15) becomes plural pieces of two-dimensional image information for which the photographing direction changes as time passes and which serve as image information required for displaying a three-dimensional image of the object in a space.
摘要翻译：本发明使得能够以简单的配置获得在空间中显示对象的三维图像所需的图像信息，并且以简单的配置实现真正意义上的立体动态图像的显示。来自物体（10）的光照射在偏转板（11）上。在入射光束中，偏转板（11）允许与偏转板（11）的平面成预定角度的光束通过，垂直于偏转板平面的平行光束射出的光束（11）。光通过会聚透镜（12），针孔构件（13）和会聚透镜（14）以撞击CCD（15）。由偏转板（11）选择的入射光的角度随着时间的推移而依次变化。因此，由CCD（15）输出的图像信息成为多个二维图像信息，其中拍摄方向随着时间的推移而改变，并且用作在空间中显示对象的三维图像所需的图像信息。

7. 发明授权

US06970187B1 Three-dimenional image photographing apparatus and method having deflection means, apparatus and method for displaying three dimensional image, and apparatus and method for converting three-dimenional image display position 失效
标题翻译：具有用于显示三维图像的偏转装置，装置和方法的三维图像拍摄装置和方法，以及用于将三维图像显示位置转换的装置和方法
公开(公告)号：US06970187B1
公开(公告)日：2005-11-29
申请号：US09868598
申请日：1999-12-20
申请人： Hideyoshi Horimai , Masaharu Kinoshita
发明人： Hideyoshi Horimai , Masaharu Kinoshita
IPC分类号： G02B27/22 , G02B27/26 , G03B35/02 , H04N13/00 , H04N13/02 , H04N13/04 , H04N9/04
CPC分类号： G03B35/02 , G02B27/2271 , G02B27/26 , H04N13/211
摘要： Image information necessary to display a three-dimensional image of an object in a space is acquired with a simple structure, and a three-dimensional dynamic image in a true sense is displayed with a simple structure. Part of light from an object (10) falls on a polarizer (11). The polarizer (11) passes the component of the incident light polarized at a predetermined angle to the surface of the polarizer (11) and allows the component to emerge from the polarizer (11) as parallel light perpendicular to the surface of the polarizer (11). The parallel light passes through a condenser lens (12), a pinhole member (13), and a condenser lens (14) and falls on a CCD (15). The angle of incident light selected by the polarizer (11) can be changed with time. Therefore, the image information outputted from the CCD (15) is a set of items of two-dimensional image information including the direction of imaging changing with time and is necessary to display a three-dimensional image of an object in a space.
摘要翻译：以简单的结构获取显示空间中的对象的三维图像所需的图像信息，并且以简单的结构显示真实意义上的三维动态图像。来自物体（10）的光的一部分落在偏振器（11）上。偏振器（11）将入射光的成分以预定角度偏振到偏振器（11）的表面，并且允许成分从偏振器（11）出射，作为与偏振器（11）的表面垂直的平行光）。平行光通过聚光透镜（12），针孔构件（13）和聚光透镜（14）并落在CCD（15）上。由偏振器（11）选择的入射光的角度随时间变化。因此，从CCD（15）输出的图像信息是包括成像方向随时间变化的二维图像信息的项目，并且需要在空间中显示对象的三维图像。

8. 发明申请

US20140246646A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20140246646A1
公开(公告)日：2014-09-04
申请号：US14349386
申请日：2011-10-07
申请人： Yoshitaka Sasago , Masaharu Kinoshita
发明人： Yoshitaka Sasago , Masaharu Kinoshita
IPC分类号： H01L27/24
CPC分类号： H01L27/2481 , H01L27/2409 , H01L27/2454 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/1683
摘要： A memory cell array having such a structure that can be realized with a simpler process and ideal for realizing a higher density is provided. Memory cells have a structure in which channel layers (88p and 89p) are formed on the side surfaces of each of a plurality of stacked structures which extends in the Y direction and is periodically formed in the X direction with a gate insulator film layer (9) interposed, and a resistance-change material layer (7) is formed so as to be electrically connected to two adjacent channel layers of the channel layers. Due to such a structure, it is not necessary to perform such a very difficult step that processes the resistance-change material and the silicons collectively and it is possible to provide the memory cell array with a simpler process.
摘要翻译：提供具有能够以更简单的处理实现并且实现更高密度的理想的具有这种结构的存储单元阵列。存储单元具有这样的结构，其中沟道层（88p和89p）形成在多个层叠结构中的每一个在Y方向上延伸并且沿X方向周期性地形成的栅极绝缘膜层（9 ），并且形成电阻变化材料层（7），以电连接到沟道层的两个相邻沟道层。由于这样的结构，不需要进行这样一个非常困难的步骤，即整体地处理电阻变化材料和硅，并且可以以更简单的工艺来提供存储单元阵列。

9. 发明授权

US08604456B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08604456B2
公开(公告)日：2013-12-10
申请号：US13366544
申请日：2012-02-06
申请人： Masaharu Kinoshita , Yoshitaka Sasago , Norikatsu Takaura
发明人： Masaharu Kinoshita , Yoshitaka Sasago , Norikatsu Takaura
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , G11C11/5678 , G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/1675 , Y10S438/90
摘要： Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.
摘要翻译：本发明提供一种非易失性存储装置，其包括：配置有交叉点存储单元的相变存储器，其中由相变材料形成的存储元件和由二极管形成的选择元件组合。存储单元配置有由相变材料形成的存储元件和由具有第一多晶硅膜，第二多晶硅膜和第三多晶硅膜的堆叠结构的二极管形成的选择元件。存储单元布置在沿着第一方向延伸的多个第一金属布线的交点和沿着与第一方向正交的第二方向延伸的多个第三金属布线。在相邻的选择元件之间和相邻的存储元件之间形成中间膜，并且在设置在相邻的存储元件之间的层间膜中形成空隙。

10. 发明申请

US20130228739A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20130228739A1
公开(公告)日：2013-09-05
申请号：US13884263
申请日：2010-12-06
申请人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Akio Shima , Kenzo Kurotsuchi , Takashi Kobayashi
发明人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Akio Shima , Kenzo Kurotsuchi , Takashi Kobayashi
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0004 , G11C2213/75 , H01L27/0688 , H01L27/1021 , H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2454 , H01L27/2481 , H01L27/249 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.
摘要翻译：当在叠层薄膜上除去形成在绝缘膜和栅电极交替层叠在一起的叠层膜的侧壁上的薄沟道半导体层时，包括沟道半导体层的垂直晶体管与栅电极之间的接触电阻，并且防止形成在层叠膜上的位线上升。作为其手段，电连接到沟道半导体层的导电层设置在堆叠膜的正上方。

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