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1. 发明授权

US08076679B2 Nitride-based semiconductor light-emitting diode and illuminating device 有权
标题翻译：氮化物半导体发光二极管和照明装置
公开(公告)号：US08076679B2
公开(公告)日：2011-12-13
申请号：US10593446
申请日：2005-03-18
申请人： Yoshitaka Kinoshita , Hidenori Kamei
发明人： Yoshitaka Kinoshita , Hidenori Kamei
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , A61K38/24 , C07K14/59 , F21K9/00 , H01L33/12 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , A61K2300/00 , H01L2924/00014
摘要： A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.
摘要翻译：在由III-V族氮化物半导体构成的衬底（10）的主表面上形成包括发光层（14）的多个半导体层。在发光层（14）和基板（10）之间形成含有铟的第一n型半导体层（12），从而减小基板表面的损伤的影响。通过具有这种结构，实现了具有均匀特性的半导体发光器件。

2. 发明申请

US20110037092A1 LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：发光元件
公开(公告)号：US20110037092A1
公开(公告)日：2011-02-17
申请号：US12989630
申请日：2009-06-01
申请人： Atsuhiro Hori , Syuusaku Maeda , Hidenori Kamei
发明人： Atsuhiro Hori , Syuusaku Maeda , Hidenori Kamei
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32 , H01L33/46
摘要： A light-emitting device includes an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15, which are sequentially stacked on a substrate 11; and a p-side electrode 16 formed on the p-type semiconductor layer 15. The p-side electrode 16 includes an adhesive layer 61 formed in contact with the p-type semiconductor layer 15, having a thickness ranging from 0.5 atomic layer to 1.5 atomic layer, and made of platinum; and a reflective layer 62 formed in contact with the adhesive layer 61, and made of a material containing silver.
摘要翻译：发光器件包括依次堆叠在衬底11上的n型半导体层13，发光层14和p型半导体层15; 和形成在p型半导体层15上的p侧电极16.p侧电极16包括与p型半导体层15接触形成的粘合剂层61，其厚度范围为0.5原子层至1.5 原子层，由铂制成; 以及与粘合剂层61接触形成并由含有银的材料制成的反射层62。

3. 发明申请

US20070057282A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070057282A1
公开(公告)日：2007-03-15
申请号：US11521491
申请日：2006-09-15
申请人： Yoshitaka Kinoshita , Hidenori Kamei
发明人： Yoshitaka Kinoshita , Hidenori Kamei
IPC分类号： H01L29/74
CPC分类号： H01L33/12 , H01L33/32
摘要： A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x
摘要翻译：一种半导体发光器件包括：衬底; 形成在所述基板上并且包括多个第一导电类型的III-V族氮化物半导体层的第一导电类型层; 形成在所述第一导电类型层上的有源层; 以及形成在所述有源层上并且包括第二导电类型的III-V族氮化物半导体层的第二导电类型层。第一导电类型层包括由Al x Ga 1-xy N y N（其中0.001 <= x <0.1， 0

4. 发明授权

US07023019B2 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device 失效
标题翻译：发光半导体器件，发光系统和制造发光半导体器件的方法
公开(公告)号：US07023019B2
公开(公告)日：2006-04-04
申请号：US10469740
申请日：2002-09-03
申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
发明人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
IPC分类号： H01L33/00
CPC分类号： C09K11/025 , C09K11/7731 , C09K11/7734 , C09K11/7735 , C09K11/7774 , C09K11/7792 , F21S6/00 , F21S6/003 , F21Y2115/10 , H01L24/45 , H01L33/502 , H01L33/54 , H01L2224/16145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H05B33/14 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1−a1−b1−xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
摘要翻译：芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要组分，由化学式表示的化合物：（Sr 1-a 1-b 1-x Ba）a a1 Ca 2 Sb x x （0 <= a1 <= 0.3,0 <= b1 <= 0.8和0

5. 发明申请

US20050227569A1 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device 失效
标题翻译：发光半导体器件，发光系统和制造发光半导体器件的方法
公开(公告)号：US20050227569A1
公开(公告)日：2005-10-13
申请号：US11143660
申请日：2005-06-03
申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
发明人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
IPC分类号： H01L33/32 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01J1/62
CPC分类号： C09K11/025 , C09K11/7731 , C09K11/7734 , C09K11/7735 , C09K11/7774 , C09K11/7792 , F21S6/00 , F21S6/003 , F21Y2115/10 , H01L24/45 , H01L33/502 , H01L33/54 , H01L2224/16145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H05B33/14 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
摘要翻译：芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要组分，由化学式表示的化合物：（Sr 1-a 1-b 1-x Ba）a a1 Ca 2 Sb x x （0 <= a1 <= 0.3,0 <= b1 <= 0.8和0

6. 发明授权

US08309975B2 Semiconductor light emitting element and semiconductor light emitting device using the same 有权
标题翻译：半导体发光元件和使用其的半导体发光器件
公开(公告)号：US08309975B2
公开(公告)日：2012-11-13
申请号：US12739295
申请日：2008-10-30
申请人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
发明人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.
摘要翻译：在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下，如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。因此，n侧电极的长度优选为基板的整个周长的20〜50％。

7. 发明授权

US08178889B2 Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region 有权
标题翻译：具有单个缺陷集中区域的半导体发光元件和未形成在单个缺陷集中区域上的发光层
公开(公告)号：US08178889B2
公开(公告)日：2012-05-15
申请号：US12305299
申请日：2007-06-19
申请人： Yoshitaka Kinoshita , Hidenori Kamei
发明人： Yoshitaka Kinoshita , Hidenori Kamei
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0062 , H01L33/12 , H01L33/382
摘要： A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On the defect concentrated region 11a, a first electrode 13 is formed. On the semiconductor layer 12, a second electrode 14 is formed.
摘要翻译：半导体发光元件包括具有比其他区域中的晶体缺陷密度高的缺陷集中区域11a的基板11。在基板11上形成半导体层12。在缺陷集中区域11a上形成第一电极13。在半导体层12上形成第二电极14。

8. 发明申请

US20100237382A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE ELEMENT, AND METHOD FOR MANUFACTURING THE DEVICE 审中-公开
标题翻译：半导体发光元件，使用元件的半导体发光器件以及用于制造器件的方法
公开(公告)号：US20100237382A1
公开(公告)日：2010-09-23
申请号：US12682761
申请日：2008-09-17
申请人： Hidenori Kamei
发明人： Hidenori Kamei
IPC分类号： H01L33/12 , H01L33/38
CPC分类号： H01L33/16 , H01L33/0095 , H01L33/20 , H01L2224/04042 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05618 , H01L2224/05623 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05669 , H01L2224/05673 , H01L2224/13 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2924/013
摘要： The present invention provides a semiconductor light emitting element capable of improving light extraction efficiency and a semiconductor light emitting device using the semiconductor light emitting element without adding any manufacturing stepA semiconductor light emitting element 1 includes a compound semiconductor layer 3 stacked on a single crystal substrate, and is formed by separating the single crystal substrate into individual rectangular pieces. An individual piece 2, which is the separated single crystal substrate, is oriented at a predetermined angle with respect to a cleavage plane of a crystal structure of the single crystal substrate so that long side surfaces 21 and 23 are different from the cleavage planes.
摘要翻译：本发明提供了一种能够提高光提取效率的半导体发光元件和使用该半导体发光元件而不添加任何制造步骤的半导体发光器件。半导体发光元件1包括堆叠在单晶衬底上的化合物半导体层3 并且通过将单晶衬底分离成单独的矩形片而形成。作为分离的单晶基板的单片2相对于单晶基板的晶体结构的解理面以规定角度取向，使得长侧面21,23与解理面不同。

9. 发明授权

US07592639B2 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device 有权
标题翻译：发光半导体器件，发光系统和制造发光半导体器件的方法
公开(公告)号：US07592639B2
公开(公告)日：2009-09-22
申请号：US11585892
申请日：2006-10-25
申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
发明人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
IPC分类号： H01L33/00
CPC分类号： C09K11/025 , C09K11/7731 , C09K11/7734 , C09K11/7735 , C09K11/7774 , C09K11/7792 , F21S6/00 , F21S6/003 , F21Y2115/10 , H01L24/45 , H01L33/502 , H01L33/54 , H01L2224/16145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H05B33/14 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
摘要翻译：芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要（Sr1-a1-b1-xBaa1Cab1Eux）2SiO4（0≤a1= 0.3,0 <= b1 <= 0.8,0

10. 发明申请

US20070046169A1 Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device 有权
标题翻译：发光半导体器件，发光系统和制造发光半导体器件的方法
公开(公告)号：US20070046169A1
公开(公告)日：2007-03-01
申请号：US11585892
申请日：2006-10-25
申请人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
发明人： Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
IPC分类号： H01L33/00
CPC分类号： C09K11/025 , C09K11/7731 , C09K11/7734 , C09K11/7735 , C09K11/7774 , C09K11/7792 , F21S6/00 , F21S6/003 , F21Y2115/10 , H01L24/45 , H01L33/502 , H01L33/54 , H01L2224/16145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/181 , H05B33/14 , Y02B20/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
摘要翻译：芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要组分，由化学式表示的化合物：（Sr 1-a 1-b 1-x Ba）a a1 Ca 2 Sb x x （0 <= a1 <= 0.3,0 <= b1 <= 0.8和0

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