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1. 发明申请

US20100258837A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME 有权
标题翻译：使用其的半导体发光元件和半导体发光器件
公开(公告)号：US20100258837A1
公开(公告)日：2010-10-14
申请号：US12739295
申请日：2008-10-30
申请人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
发明人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/38 , H01L33/62
CPC分类号： H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency.The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.
摘要翻译：在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下，如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。因此，n侧电极的长度优选为基板的整个周长的20〜50％。

2. 发明授权

US08309975B2 Semiconductor light emitting element and semiconductor light emitting device using the same 有权
标题翻译：半导体发光元件和使用其的半导体发光器件
公开(公告)号：US08309975B2
公开(公告)日：2012-11-13
申请号：US12739295
申请日：2008-10-30
申请人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
发明人： Atsuhiro Hori , Hidenori Kamei , Syuusaku Maeda
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.
摘要翻译：在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下，如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。因此，n侧电极的长度优选为基板的整个周长的20〜50％。

3. 发明申请

US20110037092A1 LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：发光元件
公开(公告)号：US20110037092A1
公开(公告)日：2011-02-17
申请号：US12989630
申请日：2009-06-01
申请人： Atsuhiro Hori , Syuusaku Maeda , Hidenori Kamei
发明人： Atsuhiro Hori , Syuusaku Maeda , Hidenori Kamei
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32 , H01L33/46
摘要： A light-emitting device includes an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15, which are sequentially stacked on a substrate 11; and a p-side electrode 16 formed on the p-type semiconductor layer 15. The p-side electrode 16 includes an adhesive layer 61 formed in contact with the p-type semiconductor layer 15, having a thickness ranging from 0.5 atomic layer to 1.5 atomic layer, and made of platinum; and a reflective layer 62 formed in contact with the adhesive layer 61, and made of a material containing silver.
摘要翻译：发光器件包括依次堆叠在衬底11上的n型半导体层13，发光层14和p型半导体层15; 和形成在p型半导体层15上的p侧电极16.p侧电极16包括与p型半导体层15接触形成的粘合剂层61，其厚度范围为0.5原子层至1.5 原子层，由铂制成; 以及与粘合剂层61接触形成并由含有银的材料制成的反射层62。

4. 发明授权

US08507935B2 Light emitting element and light emitting device 有权
标题翻译：发光元件和发光元件
公开(公告)号：US08507935B2
公开(公告)日：2013-08-13
申请号：US13388612
申请日：2010-07-27
申请人： Atsuhiro Hori , Hidenori Kamei
发明人： Atsuhiro Hori , Hidenori Kamei
IPC分类号： H01L33/36
CPC分类号： H01L33/405 , H01L33/20 , H01L33/44 , H01L33/46
摘要： A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided.A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.
摘要翻译：提供了一种发光元件和提高光提取效率的发光器件。发光元件10包括具有透光性的基板1，堆叠n型层2a，有源层2b和p型层2c的半导体层2，层叠在半导体层上的反射电极3 2，被配置为将从有源层2b发射的光朝向基板1反射，堆叠在反射电极3上的p侧焊盘电极4，覆盖半导体层2的侧面并具有透光性的绝缘膜6，叠层在绝缘膜6上并具有光反射率的反射膜7和设置在基板1上的n侧电极5。

5. 发明申请

US20120126276A1 LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE 有权
标题翻译：发光元件和发光装置
公开(公告)号：US20120126276A1
公开(公告)日：2012-05-24
申请号：US13388612
申请日：2010-07-27
申请人： Atsuhiro Hori , Hidenori Kamei
发明人： Atsuhiro Hori , Hidenori Kamei
IPC分类号： H01L33/36
CPC分类号： H01L33/405 , H01L33/20 , H01L33/44 , H01L33/46
摘要： A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided.A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.
摘要翻译：提供了一种发光元件和提高光提取效率的发光器件。发光元件10包括具有透光性的基板1，堆叠n型层2a，有源层2b和p型层2c的半导体层2，层叠在半导体层上的反射电极3 2，被配置为将从有源层2b发射的光朝向基板1反射，堆叠在反射电极3上的p侧焊盘电极4，覆盖半导体层2的侧面并具有透光性的绝缘膜6，叠层在绝缘膜6上并具有光反射率的反射膜7和设置在基板1上的n侧电极5。

6. 发明申请

US20130168721A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20130168721A1
公开(公告)日：2013-07-04
申请号：US13813842
申请日：2011-08-03
申请人： Atsuhiro Hori , Yuji Takase
发明人： Atsuhiro Hori , Yuji Takase
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/32 , H01L33/385
摘要： A light emitting device includes a light transmissive substrate, a semiconductor layer formed on the substrate, and having an n-type layer, a light emitting layer, and a p-type layer, a reflective electrode formed on the semiconductor layer, and reflecting light from the light emitting layer toward the substrate, a barrier electrode formed on the reflective electrode, and a cover electrode formed on the barrier electrode. The reflective electrode includes a Ag layer, the cover electrode includes an layer, and the barrier electrode reduces interdiffusion between Ag and Al.
摘要翻译：发光器件包括透光基板，形成在基板上的半导体层，具有n型层，发光层和p型层，形成在半导体层上的反射电极和反射光从发光层朝向衬底，形成在反射电极上的阻挡电极和形成在阻挡电极上的覆盖电极。反射电极包括Ag层，覆盖电极包括一层，并且阻挡电极减少Ag和Al之间的相互扩散。

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