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1. 发明授权

US06866890B2 Method of forming a dielectric film 失效
标题翻译：形成电介质膜的方法
公开(公告)号：US06866890B2
公开(公告)日：2005-03-15
申请号：US10239648
申请日：2001-03-22
申请人： Hideki Kiryu , Shintaro Aoyama , Tsuyoshi Takahashi , Hiroshi Shinriki
发明人： Hideki Kiryu , Shintaro Aoyama , Tsuyoshi Takahashi , Hiroshi Shinriki
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/28 , H01L21/316 , H01L29/51 , H01L29/78
CPC分类号： H01L21/02271 , C23C16/0218 , C23C16/0227 , C23C16/0236 , C23C16/0272 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/45525 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/022 , H01L21/02238 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L21/31683 , H01L28/56 , H01L29/513 , H01L29/517
摘要： A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.
摘要翻译：在Si衬底上形成电介质膜的方法包括以下步骤：将构成电介质材料的金属元素的气态分子化合物吸附在Si衬底上，并通过水解过程或热解产生气态分子化合物的分解分解过程或氧化过程。

2. 发明授权

US06467491B1 Processing apparatus and processing method 失效
标题翻译：处理装置及处理方法
公开(公告)号：US06467491B1
公开(公告)日：2002-10-22
申请号：US09631978
申请日：2000-08-03
申请人： Masahito Sugiura , Hiroshi Shinriki , Hideki Kiryu , Shintaro Aoyama
发明人： Masahito Sugiura , Hiroshi Shinriki , Hideki Kiryu , Shintaro Aoyama
IPC分类号： B08B704
CPC分类号： H01L21/67196 , H01L21/67115 , H01L21/681 , Y10S134/902
摘要： A pretreatment chamber 120 is disposed within a vacuum transfer chamber 102 of a processing apparatus 100. The pretreatment chamber 120 is equipped with an orienting mechanism 128 and a UV lamp 124. The orienting mechanism 128 orients a wafer W through rotation of a table 130, on which the wafer W is placed, and by use of an optical sensor 134. Synchronously with the orientation, the UV lamp 124 emits UV through a UV transmission window 126 fitted to a ceiling portion of the pretreatment chamber 120, to thereby irradiate the surface of the wafer W with UV. Thus adhering to the wafer W is removed. A processing gas supplied into the pretreatment chamber 120 is also irradiated with UV. Active atoms generated from the processing gas also contribute to removal of carbon. Since the pretreatment chamber 120 is formed within the vacuum transfer chamber 102, the footprint of the processing apparatus can be reduced. Since orientation of the wafer W and removal of contaminants are performed concurrently, throughput is improved.
摘要翻译：预处理室120设置在处理设备100的真空转移室102内。预处理室120配备有定向机构128和UV灯124.定向机构128通过台130的旋转定向晶片W，在其上放置晶片W，并且通过使用光学传感器134.与该取向同步，UV灯124通过装配到预处理室120的顶部的UV透射窗口126发射UV，从而照射表面的晶片W。因此，除去了附着在晶片W上。供给到预处理室120的处理气体也用UV照射。从处理气体产生的活性原子也有助于去除碳。由于预处理室120形成在真空传送室102内，因此能够减少处理装置的占地面积。由于晶片W的取向和污染物的去除同时进行，因此提高了生产率。

3. 发明授权

US06617207B1 Method and system for forming a stacked gate insulating film 失效
标题翻译：用于形成堆叠栅极绝缘膜的方法和系统
公开(公告)号：US06617207B1
公开(公告)日：2003-09-09
申请号：US09662593
申请日：2000-09-14
申请人： Hideki Kiryu , Shintaro Aoyama
发明人： Hideki Kiryu , Shintaro Aoyama
IPC分类号： H01L218242
CPC分类号： H01L21/28185 , H01L21/02183 , H01L21/022 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/28194 , H01L21/28211 , H01L21/31116 , H01L21/31604 , H01L21/31662 , H01L21/67109 , H01L29/513 , H01L29/517
摘要： A stacked gate insulating film comprises a silicon oxide film and a tantalum oxide film which is stacked on the silicon oxide film and whose dielectric constant is higher than a dielectric constant of the silicon oxide film. The stacked gate insulating film is formed in accordance with the following steps. A semiconductor wafer is heated up, and the surface thereof is heat-oxidized. The silicon oxide film is formed on the semiconductor wafer (heat oxidation process). The silicon oxide film is etched back so as to be made thin (etch back process). The tantalum oxide film is stacked on the thin silicon oxide film (dielectric film formation process), thereby to form the stacked gate insulating film.
摘要翻译：叠层栅极绝缘膜包括层叠在氧化硅膜上并且其介电常数高于氧化硅膜的介电常数的氧化硅膜和氧化钽膜。堆叠的栅极绝缘膜根据以下步骤形成。半导体晶片被加热，其表面被热氧化。氧化硅膜形成在半导体晶片上（热氧化工艺）。将氧化硅膜回蚀刻以使其变薄（回蚀刻工艺）。在氧化硅薄膜（电介质膜形成工序）上层叠氧化钽膜，形成堆叠的栅极绝缘膜。

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