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1. 发明申请

US20070218664A1 Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus 有权
标题翻译：气相外延生长法和气相外延装置
公开(公告)号：US20070218664A1
公开(公告)日：2007-09-20
申请号：US11725467
申请日：2007-03-20
申请人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
发明人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/4586 , C30B25/12 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/68728
摘要： A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
摘要翻译：一种使用具有室的气相外延生长装置的气相外延生长方法，在室内保持基板的支撑结构，在基板上供给成膜用反应气体的第一流路和用于排气的第二流路气体，所述方法包括旋转衬底，提供反应气体和载气，从而在衬底上进行半导体膜的气相外延生长，并且在衬底上的半导体膜的气相外延生长期间，控制使所述半导体膜的厚度均匀的工艺参数，所述工艺参数包括反应气体和载气的流速和浓度，所述室内的真空度，基板的温度和所述基板的转速。

2. 发明授权

US08007588B2 Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus 有权
标题翻译：气相外延生长法和气相外延装置
公开(公告)号：US08007588B2
公开(公告)日：2011-08-30
申请号：US11725467
申请日：2007-03-20
申请人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
发明人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
IPC分类号： C30B21/04
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/4586 , C30B25/12 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/68728
摘要： A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
摘要翻译：一种使用具有室的气相外延生长装置的气相外延生长方法，在室内保持基板的支撑结构，在基板上供给成膜用反应气体的第一流路和用于排气的第二流路气体，所述方法包括旋转衬底，提供反应气体和载气，从而在衬底上进行半导体膜的气相外延生长，并且在衬底上的半导体膜的气相外延生长期间，控制使所述半导体膜的厚度均匀的工艺参数，所述工艺参数包括反应气体和载气的流速和浓度，所述室内的真空度，基板的温度和所述基板的转速。

3. 发明申请

US20070023869A1 Vapor phase deposition apparatus and vapor phase deposition method 审中-公开
标题翻译：气相沉积装置和气相沉积方法
公开(公告)号：US20070023869A1
公开(公告)日：2007-02-01
申请号：US11494649
申请日：2006-07-28
申请人： Hiroshi Furutani , Yoshikazu Moriyama , Seiichi Nakazawa , Kunihiko Suzuki , Hideki Arai , Satoshi Inada
发明人： Hiroshi Furutani , Yoshikazu Moriyama , Seiichi Nakazawa , Kunihiko Suzuki , Hideki Arai , Satoshi Inada
IPC分类号： H01L23/58
CPC分类号： C23C16/4585 , C30B25/12
摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.
摘要翻译：气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及第二通道，其连接到所述室并适于从所述室排放气体。支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。

4. 发明授权

US08796594B2 Semiconductor manufacturing equipment and heater structural connection 有权
标题翻译：半导体制造设备和加热器结构连接
公开(公告)号：US08796594B2
公开(公告)日：2014-08-05
申请号：US11723028
申请日：2007-03-16
申请人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
发明人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
IPC分类号： H05B1/02 , H01L21/67
CPC分类号： H01L21/67103
摘要： A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.
摘要翻译：本文提供半导体制造设备。半导体制造设备包括：加热元件，被配置为加热晶片，第一连接部分和与加热器元件集成的第二连接部分;与第一电极的第一表面电接触并固定到第一连接部分的第一电极以及与第二电极电连接并固定到第二连接部分的第二电极的第二表面上的第二电极。第二表面垂直于第一表面的方向，并且加热器元件通过在第一电极和第二电极之间施加电压而产生热量。

5. 发明申请

US20070221657A1 Semiconductor manufacturing equipment and heater 有权
标题翻译：半导体制造设备和加热器
公开(公告)号：US20070221657A1
公开(公告)日：2007-09-27
申请号：US11723028
申请日：2007-03-16
申请人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
发明人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
IPC分类号： H05B1/02
CPC分类号： H01L21/67103
摘要： Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.
摘要翻译：半导体制造设备包括被配置为加热晶片的加热器元件，与加热器元件集成的第一连接部分和第二连接部分，其构造成向加热器元件施加电压，与第一连接接触并固定的第一电极所述第一电极的第一表面上的部分被配置为向所述第一连接部施加电压;第二电极，所述第二电极在所述第二电极的第二表面上与所述第二连接部分接触并固定，到第二连接部分，并且第二表面垂直于第一表面的方向。

6. 发明申请

US20120055406A1 Vapor Phase Deposition Apparatus and Support Table 有权
标题翻译：气相沉积装置和支撑台
公开(公告)号：US20120055406A1
公开(公告)日：2012-03-08
申请号：US13297483
申请日：2011-11-16
申请人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
发明人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
IPC分类号： C23C16/458
CPC分类号： C23C16/481 , C23C16/4581 , C23C16/4585 , C30B25/10 , C30B29/06 , C30B35/00
摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.
摘要翻译：气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

7. 发明申请

US20070204796A1 Vapor phase deposition apparatus and support table 审中-公开
标题翻译：气相沉积装置和支撑台
公开(公告)号：US20070204796A1
公开(公告)日：2007-09-06
申请号：US11706971
申请日：2007-02-16
申请人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
发明人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C16/4581 , C23C16/4585 , C30B25/10 , C30B29/06 , C30B35/00
摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.
摘要翻译：气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

8. 发明授权

US09093484B2 Manufacturing apparatus and method for semiconductor device 有权
标题翻译：半导体器件的制造装置和方法
公开(公告)号：US09093484B2
公开(公告)日：2015-07-28
申请号：US12853107
申请日：2010-08-09
申请人： Kunihiko Suzuki , Yoshikazu Moriyama
发明人： Kunihiko Suzuki , Yoshikazu Moriyama
IPC分类号： C23C16/458 , C23C16/46 , H01L21/67 , H01L21/683 , H01L21/687 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , C30B25/04 , C30B25/10 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/68785 , H01L21/68792
摘要： A manufacturing apparatus for a semiconductor device includes: a chamber configured to load a wafer into the chamber; a gas supplying mechanism configured to supply processed gas into the chamber; a gas discharging mechanism configured to discharge the gas from the chamber; a wafer supporting member configured to mount the wafer; a heater including a heater element configured to heat the wafer up to a predetermined temperature and a heater electrode molded integrally with the heater element; an electrode part connected to the heater electrode and configured to applied a voltage to the heater element via the heater electrode; a base configured to fix the electrode part; and a rotational drive control mechanism configured to rotate the wafer; wherein at least a part of a connection portion of the heater electrode and the electrode part is positioned under the upper surface of the base.
摘要翻译：一种用于半导体器件的制造装置，包括：被配置为将晶片加载到所述腔室中的腔室; 气体供给机构，其构造成将处理后的气体供给到所述室内; 气体排出机构，其构造成从所述室排出气体; 构造成安装晶片的晶片支撑构件; 加热器，其包括被配置为将晶片加热到预定温度的加热器元件和与所述加热器元件一体模制的加热器电极; 连接到所述加热器电极并且被配置为经由所述加热器电极向所述加热器元件施加电压的电极部分; 基部，被配置为固定所述电极部; 以及旋转驱动控制机构，其构造成使所述晶片旋转; 其中，所述加热器电极和所述电极部的连接部的至少一部分位于所述基部的上表面的下方。

9. 发明授权

US08951353B2 Manufacturing method and apparatus for semiconductor device 有权
标题翻译：半导体器件的制造方法和装置
公开(公告)号：US08951353B2
公开(公告)日：2015-02-10
申请号：US13221565
申请日：2011-08-30
申请人： Yoshikazu Moriyama , Yoshihisa Ohta
发明人： Yoshikazu Moriyama , Yoshihisa Ohta
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , C23C14/58 , C23C14/54 , H01L21/205 , C23C16/56 , C23C14/50 , C23C16/24 , C30B25/02 , C30B25/10 , C30B25/16 , C30B29/06 , C23C14/06 , H01L21/02
CPC分类号： C23C16/56 , C23C14/0617 , C23C14/0635 , C23C14/0652 , C23C14/0682 , C23C14/505 , C23C14/54 , C23C14/541 , C23C14/5806 , C23C16/24 , C23C16/45504 , C23C16/45508 , C23C16/4584 , C23C16/46 , C23C16/463 , C30B25/02 , C30B25/10 , C30B25/16 , C30B29/06 , H01L21/02532 , H01L21/02546 , H01L21/0262
摘要： A manufacturing method for semiconductor device includes: loading a wafer to a reaction chamber and placing the wafer on a support member; supplying process gas including source gas to a surface of the wafer, controlling a heater output and heating the wafer to a predetermined temperature while rotating the wafer at a first rotational speed, and thereby forming a film on a surface of the wafer; stopping supplying the source gas; decreasing a rotational speed of the wafer to a second rotational speed which enables an offset balance of the wafer to be maintained and stopping the heater output; and decreasing a temperature of the wafer while rotating the wafer at the second rotational speed.
摘要翻译：半导体器件的制造方法包括：将晶片装载到反应室并将晶片放置在支撑构件上; 在晶片的表面上旋转晶片的同时，将包括源气体的工艺气体供给到晶片的表面，控制加热器输出并将晶片加热到预定温度，从而在晶片的表面上形成膜; 停止供应源气体; 将晶片的旋转速度降低到能够保持晶片的偏移平衡并停止加热器输出的第二转速; 并且在第二旋转速度旋转晶片的同时降低晶片的温度。

10. 发明授权

US07923355B2 Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device 有权
标题翻译：半导体装置的制造方法及半导体装置的制造装置
公开(公告)号：US07923355B2
公开(公告)日：2011-04-12
申请号：US12257845
申请日：2008-10-24
申请人： Masayoshi Yajima , Yoshikazu Moriyama
发明人： Masayoshi Yajima , Yoshikazu Moriyama
IPC分类号： H01L21/20 , H01L21/36 , H01L21/31
CPC分类号： H01L21/0262 , C23C16/402 , C23C16/4405 , H01L21/02381 , H01L21/02532 , H01L21/02661
摘要： A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.
摘要翻译：一种半导体装置的制造方法，其特征在于，将晶片保持在反应室内，以预定的周期交替地，以规定的周期，将包含源气体的第一处理气体和含有H 2或惰性气体的第二处理气体以精炼状态交替地供给到晶片上，旋转晶片，加热晶片以在晶片上形成膜。

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