专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08796594B2 Semiconductor manufacturing equipment and heater structural connection 有权
标题翻译：半导体制造设备和加热器结构连接
公开(公告)号：US08796594B2
公开(公告)日：2014-08-05
申请号：US11723028
申请日：2007-03-16
申请人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
发明人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
IPC分类号： H05B1/02 , H01L21/67
CPC分类号： H01L21/67103
摘要： A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.
摘要翻译：本文提供半导体制造设备。半导体制造设备包括：加热元件，被配置为加热晶片，第一连接部分和与加热器元件集成的第二连接部分;与第一电极的第一表面电接触并固定到第一连接部分的第一电极以及与第二电极电连接并固定到第二连接部分的第二电极的第二表面上的第二电极。第二表面垂直于第一表面的方向，并且加热器元件通过在第一电极和第二电极之间施加电压而产生热量。

2. 发明申请

US20070221657A1 Semiconductor manufacturing equipment and heater 有权
标题翻译：半导体制造设备和加热器
公开(公告)号：US20070221657A1
公开(公告)日：2007-09-27
申请号：US11723028
申请日：2007-03-16
申请人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
发明人： Hideki Arai , Satoshi Inada , Yoshikazu Moriyama , Noriki Juumatsu
IPC分类号： H05B1/02
CPC分类号： H01L21/67103
摘要： Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.
摘要翻译：半导体制造设备包括被配置为加热晶片的加热器元件，与加热器元件集成的第一连接部分和第二连接部分，其构造成向加热器元件施加电压，与第一连接接触并固定的第一电极所述第一电极的第一表面上的部分被配置为向所述第一连接部施加电压;第二电极，所述第二电极在所述第二电极的第二表面上与所述第二连接部分接触并固定，到第二连接部分，并且第二表面垂直于第一表面的方向。

3. 发明申请

US20070023869A1 Vapor phase deposition apparatus and vapor phase deposition method 审中-公开
标题翻译：气相沉积装置和气相沉积方法
公开(公告)号：US20070023869A1
公开(公告)日：2007-02-01
申请号：US11494649
申请日：2006-07-28
申请人： Hiroshi Furutani , Yoshikazu Moriyama , Seiichi Nakazawa , Kunihiko Suzuki , Hideki Arai , Satoshi Inada
发明人： Hiroshi Furutani , Yoshikazu Moriyama , Seiichi Nakazawa , Kunihiko Suzuki , Hideki Arai , Satoshi Inada
IPC分类号： H01L23/58
CPC分类号： C23C16/4585 , C30B25/12
摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.
摘要翻译：气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及第二通道，其连接到所述室并适于从所述室排放气体。支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。

4. 发明授权

US08007588B2 Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus 有权
标题翻译：气相外延生长法和气相外延装置
公开(公告)号：US08007588B2
公开(公告)日：2011-08-30
申请号：US11725467
申请日：2007-03-20
申请人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
发明人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
IPC分类号： C30B21/04
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/4586 , C30B25/12 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/68728
摘要： A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
摘要翻译：一种使用具有室的气相外延生长装置的气相外延生长方法，在室内保持基板的支撑结构，在基板上供给成膜用反应气体的第一流路和用于排气的第二流路气体，所述方法包括旋转衬底，提供反应气体和载气，从而在衬底上进行半导体膜的气相外延生长，并且在衬底上的半导体膜的气相外延生长期间，控制使所述半导体膜的厚度均匀的工艺参数，所述工艺参数包括反应气体和载气的流速和浓度，所述室内的真空度，基板的温度和所述基板的转速。

5. 发明申请

US20070218664A1 Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus 有权
标题翻译：气相外延生长法和气相外延装置
公开(公告)号：US20070218664A1
公开(公告)日：2007-09-20
申请号：US11725467
申请日：2007-03-20
申请人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
发明人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/4586 , C30B25/12 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/68728
摘要： A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
摘要翻译：一种使用具有室的气相外延生长装置的气相外延生长方法，在室内保持基板的支撑结构，在基板上供给成膜用反应气体的第一流路和用于排气的第二流路气体，所述方法包括旋转衬底，提供反应气体和载气，从而在衬底上进行半导体膜的气相外延生长，并且在衬底上的半导体膜的气相外延生长期间，控制使所述半导体膜的厚度均匀的工艺参数，所述工艺参数包括反应气体和载气的流速和浓度，所述室内的真空度，基板的温度和所述基板的转速。

6. 发明授权

US07609354B2 Active matrix substrate and liquid crystal display device with the same 有权
标题翻译：有源矩阵基板和液晶显示装置相同
公开(公告)号：US07609354B2
公开(公告)日：2009-10-27
申请号：US11090662
申请日：2005-03-28
申请人： Takayuki Konno , Satoshi Inada , Yoshiro Kitagawa , Shinichi Nishida
发明人： Takayuki Konno , Satoshi Inada , Yoshiro Kitagawa , Shinichi Nishida
IPC分类号： G02F1/1345
CPC分类号： G02F1/134363 , G02F1/1345
摘要： Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefor are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.
摘要翻译：公开了一种包括TFT基板的液晶显示装置。多个栅极线和多个公共线在TFT基板上沿第一方向延伸。排水线在大致垂直于这些线的第二方向上延伸。总线位于显示区域外部并且平行于排出线延伸。公共端子设置在由预定数量的栅极端子构成的每个块的任一侧上。公共线端子及其引线形成在与漏极线相同的层上，并且在相同层上连接到总线，而不使用任何接触。可以减少沿着公共线路路线的电阻。

7. 发明申请

US20050237469A1 Liquid crystal display device having spacer holes 有权
标题翻译：具有间隔孔的液晶显示装置
公开(公告)号：US20050237469A1
公开(公告)日：2005-10-27
申请号：US11109960
申请日：2005-04-20
申请人： Tsutomu Kadotani , Satoshi Inada , Takashi Kamino , Yusuke Nogami
发明人： Tsutomu Kadotani , Satoshi Inada , Takashi Kamino , Yusuke Nogami
IPC分类号： G02F1/1339 , G02F1/1343 , G02F1/136
CPC分类号： G02F1/13394
摘要： A liquid crystal display device includes an active matrix substrate and a counter substrate opposing each other with a gap therebetween defined by a plurality of columnar spacers. The active matrix substrate has a plurality of spacer holes each receiving therein a corresponding one of the columnar spacers, and a plurality of dummy spacer holes aligned with the spacer holes and each receiving therein no columnar spacer.
摘要翻译：液晶显示装置包括有源矩阵基板和对置基板，彼此相对，间隙由多个柱状间隔件限定。有源矩阵基板具有多个间隔孔，每个隔离孔在其中容纳相应的一个柱状间隔件，以及与间隔孔对准的多个虚拟间隔孔，并且每个间隔孔不接纳柱形间隔件。

8. 发明授权

US08956882B1 Method of manufacturing magnetoresistive element 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US08956882B1
公开(公告)日：2015-02-17
申请号：US14200510
申请日：2014-03-07
申请人： Kazuhiro Tomioka , Satoshi Seto , Masatoshi Yoshikawa , Satoshi Inada
发明人： Kazuhiro Tomioka , Satoshi Seto , Masatoshi Yoshikawa , Satoshi Inada
IPC分类号： H01L21/00 , H01L43/12
CPC分类号： H01L43/12 , H01L27/228
摘要： According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.
摘要翻译：根据一个实施例，一种制造磁阻元件的方法，该方法包括在第一磁性层上形成第一非磁性层，在第一非磁性层上形成第二磁性层，在第一非磁性层上形成第二非磁性层第二磁性层，在第二非磁性层上形成第三磁性层，使用包括惰性气体和氮气的蚀刻气体，通过RIE对第三磁性层进行构图，直到第二非磁性层的表面露出并且在第三磁性层的图案化之后图案化第二非磁性层和第二磁性层。

9. 发明授权

US4039290A Spent activated carbon regenerator 失效
标题翻译：废活性炭再生器
公开(公告)号：US4039290A
公开(公告)日：1977-08-02
申请号：US695406
申请日：1976-06-14
申请人： Satoshi Inada , Mituo Amano , Tadashi Onuma
发明人： Satoshi Inada , Mituo Amano , Tadashi Onuma
IPC分类号： B01J8/28 , C01B31/08 , B01D15/06 , B01J8/26 , B01J37/12 , B05B1/26
CPC分类号： C01B31/088 , B01J8/28
摘要： A fluidized bed type spent activated carbon regenerator with an upper drying chamber and a lower reactivating chamber within a column through which spent activated carbon particles are treated in a fluidized state. The regenerator has a distributor at the lower end of a spent carbon feed pipe which opens into the upper chamber to distribute the feed of spent activated carbon uniformly on all sides of the feed pipe and over a larger area in the upper chamber. A hood is mounted around an upper end of a first overflow pipe which provides a passage to the lower chamber for carbon particles devolatilized in the upper chamber to block shortpasses of incompletely devolatilized carbon particles to the lower chamber. The regenerator is further provided with a louver strainer at the ceiling of the upper chamber to block fine carbon powder which tends to leave the regenerator entrained in upward streams of a regeneration gas flowing through the upper chamber toward a gas outlet at the top of the regenerator.
摘要翻译：一种流化床型活性炭再生器，其具有在流化状态下处理用过的活性炭颗粒的柱内的上部干燥室和下部再活化室。再生器在废碳进料管的下端处具有分配器，该分配器通向上部室，以将废活性炭的进料均匀地分布在进料管的所有侧面上以及在上部室中的较大区域上。罩子安装在第一溢流管的上端附近，该第一溢流管提供通向下室的通道，用于在上部室中脱挥发分的碳粒子，以阻挡未完全脱挥发的碳颗粒到下腔室的短路。再生器还在上部室的天花板处设置有百叶窗过滤器，以阻挡细小的碳粉末，从而阻止再生器夹带在向上流动的再生气体的向上的流中，朝向再生器顶部的气体出口。

10. 发明授权

US08524609B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08524609B2
公开(公告)日：2013-09-03
申请号：US13230118
申请日：2011-09-12
申请人： Satoshi Inada , Mitsuhiro Omura , Hisataka Hayashi
发明人： Satoshi Inada , Mitsuhiro Omura , Hisataka Hayashi
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/039 , G03F7/095 , H01L21/0273
摘要： An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.
摘要翻译：本实施例的一个方面提供一种制造半导体器件的方法，该半导体器件包括在半导体衬底上提供待加工的膜，依次提供负型抗蚀剂和可光固化抗蚀剂，模板到可光固化抗蚀剂上，模板的主表面具有凹凸图案，具有设置在凸部的至少一部分上的遮光部分，用来自模板背面的光照射模板，显影负型抗蚀剂和光固化型抗蚀剂，以便在负型抗蚀剂和可光固化抗蚀剂上印刷模板的凹凸图案，并通过使用凹凸图案来蚀刻待处理的薄膜印刷在负型抗蚀剂和可光固化抗蚀剂上作为掩模。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式