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1. 发明授权

US08390029B2 Semiconductor device for reducing and/or preventing current collapse 有权
标题翻译：用于减少和/或防止电流崩溃的半导体装置
公开(公告)号：US08390029B2
公开(公告)日：2013-03-05
申请号：US12867427
申请日：2009-01-23
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/00
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/432 , H01L29/66462
摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).
摘要翻译：半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107）浓度p型GaN层（106）。在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域在n型AlGaN层（107）中。

2. 发明申请

US20110012173A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110012173A1
公开(公告)日：2011-01-20
申请号：US12867427
申请日：2009-01-23
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/12
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/432 , H01L29/66462
摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).
摘要翻译：半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107）浓度p型GaN层（106）。在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域在n型AlGaN层（107）中。

3. 发明授权

US08872227B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08872227B2
公开(公告)日：2014-10-28
申请号：US13402631
申请日：2012-02-22
申请人： Hidekazu Umeda , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/20
CPC分类号： H01L29/2003 , H01L29/1066 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/861
摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
摘要翻译：氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。氮化物半导体层包括元件区域和围绕元件区域的隔离区域。元件区域形成在正常区域上。界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

4. 发明授权

US08569797B2 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08569797B2
公开(公告)日：2013-10-29
申请号：US13185818
申请日：2011-07-19
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
IPC分类号： H01L29/80
CPC分类号： H01L29/7783 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.
摘要翻译：场效应晶体管包括形成在衬底上的第一半导体层和第二半导体层。第一半导体层具有设置为包含非导电杂质的隔离区域的含有区域和不含非导电杂质的非含有区域。第一区域由容纳区域和非含有区域之间的界面的一部分的附近限定，界面的部分在栅电极下方，包括界面部分的附近包含在包含地区。第二半导体层包括位于第一区域正上方的第二区域。第二区域的非导电性杂质的浓度低于第一区域的浓度。

5. 发明授权

US08692292B2 Semiconductor device including separated gate electrode and conductive layer 有权
标题翻译：半导体器件包括分离的栅电极和导电层
公开(公告)号：US08692292B2
公开(公告)日：2014-04-08
申请号：US13356156
申请日：2012-01-23
申请人： Hidekazu Umeda , Tetsuzo Ueda
发明人： Hidekazu Umeda , Tetsuzo Ueda
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm−3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.
摘要翻译：半导体器件包括：衬底101，包括形成在衬底101上的多个氮化物半导体层的第一氮化物半导体层104S，并具有沟道区; 第二半导体层105，其形成在第一氮化物半导体层104S上，并且具有与沟道区的导电类型相反的导电类型; 与第二半导体层105接触的导体层，具有载流子浓度为1×1018 cm -3以上的金属层107或高载流子浓度半导体层; 形成在导电层上的绝缘层110; 形成在绝缘层110上的栅电极111; 以及形成为横向夹持第二半导体层105的源电极108和漏电极109。

6. 发明授权

US07959729B2 Method for producing group-III-element nitride single crystals and apparatus used therein 失效
标题翻译： III族元素氮化物单晶的制造方法及其中使用的装置
公开(公告)号：US07959729B2
公开(公告)日：2011-06-14
申请号：US10549494
申请日：2004-03-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Hidekazu Umeda
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Hidekazu Umeda
IPC分类号： C30B9/12
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.
摘要翻译：提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌通过摇动反应容器。

7. 发明申请

US20060169197A1 Method for producing group III nitride single crystal and apparatus used therefor 失效
标题翻译： III族氮化物单晶的制造方法及其用途
公开(公告)号：US20060169197A1
公开(公告)日：2006-08-03
申请号：US10549494
申请日：2004-03-15
申请人： Takatamo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Hidekazu Umeda
发明人： Takatamo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Hidekazu Umeda
IPC分类号： H01L21/322
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.
摘要翻译：提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌通过摇动反应容器。

8. 发明授权

US07754012B2 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
标题翻译：用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法
公开(公告)号：US07754012B2
公开(公告)日：2010-07-13
申请号：US12082745
申请日：2008-04-14
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B25/00 , C30B23/00 , C30B28/12 , C01B21/06
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.
摘要翻译：提供了高品质的III族氮化物晶体的制造方法。通过该方法，将晶体原料溶液和含氮气体引入加热的反应器容器中，并在施加压力的气氛中生长晶体。气体通过反应器容器的气体入口从气体供给装置引入反应器容器，然后通过反应器容器的气体出口被排出到耐压容器的内部。由于气体直接引入反应容器，因此可以防止附着在耐压容器等上的杂质进入晶体生长部位。此外，气体流过反应器容器，以抑制气体入口处的蒸发的碱金属等的聚集，并且减少金属蒸气进入气体供应装置的流动。

9. 发明申请

US20070157876A1 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
标题翻译：用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法
公开(公告)号：US20070157876A1
公开(公告)日：2007-07-12
申请号：US10587223
申请日：2005-04-27
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B11/00 , C30B23/00 , C30B21/06 , B01J3/04
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.
摘要翻译：提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。例如，使用本发明的装置如下生长晶体。将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部反应堆容器。由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以被阻止此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。结果，可以提高获得的III族氮化物晶体的质量。

10. 发明授权

US07381268B2 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
公开(公告)号：US07381268B2
公开(公告)日：2008-06-03
申请号：US10587223
申请日：2005-04-27
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

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