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1. 发明授权

US06924223B2 Method of forming a metal layer using an intermittent precursor gas flow process 有权
标题翻译：使用间歇性前体气体流动方法形成金属层的方法
公开(公告)号：US06924223B2
公开(公告)日：2005-08-02
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要翻译：提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。进行该过程，直到在基底上形成具有所需厚度的金属层。金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

2. 发明申请

US20050069632A1 Method of forming a metal layer using an intermittent precursor gas flow process 有权
公开(公告)号：US20050069632A1
公开(公告)日：2005-03-31
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , B05D5/12 , H01L21/4763
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

3. 发明授权

US07063871B2 CVD process capable of reducing incubation time 失效
标题翻译： CVD工艺能够减少孵化时间
公开(公告)号：US07063871B2
公开(公告)日：2006-06-20
申请号：US10617819
申请日：2003-07-14
申请人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
发明人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
IPC分类号： C23C16/16
CPC分类号： C23C16/16
摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
摘要翻译：金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A）以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。进行步骤（A），使得金属膜不会在基板上实质上沉积。

4. 发明申请

US20050069641A1 Method for depositing metal layers using sequential flow deposition 审中-公开
标题翻译：使用顺序流沉积沉积金属层的方法
公开(公告)号：US20050069641A1
公开(公告)日：2005-03-31
申请号：US10673910
申请日：2003-09-30
申请人： Tsukasa Matsuda , Taro Ikeda , Tatsuo Hatano , Mitsuhiro Tachibana , Hideaki Yamasaki , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Tsukasa Matsuda , Taro Ikeda , Tatsuo Hatano , Mitsuhiro Tachibana , Hideaki Yamasaki , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , B05D3/02 , C23C16/00
CPC分类号： C23C16/4408 , C23C16/16 , C23C16/45523 , H01L21/28562
摘要： A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal-carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.
摘要翻译：使用顺序流动沉积沉积具有良好表面形态的金属层的方法包括将处理室中的衬底交替地暴露于羰基金属前体气体和还原气体。在用羰基金属前驱体气体曝光的同时，在基板上沉积薄金属层，随后将金属层暴露于还原气体有助于从金属层除去反应副产物。可以重复金属羰基前体气体和还原气体暴露步骤，直到达到具有所需厚度的金属层。金属羰基前体可以例如选自W（CO）6，Ni（CO）4，Mo（CO）6，Co2（CO）8，Rh4（CO）12，Re2（CO）（CO）6和Ru 3（CO）12。

5. 发明授权

US06913996B2 Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring 有权
标题翻译：形成金属布线的方法和用于形成金属布线的半导体制造装置
公开(公告)号：US06913996B2
公开(公告)日：2005-07-05
申请号：US10181273
申请日：2001-11-13
申请人： Hideaki Yamasaki , Mitsuhiro Tachibana , Kazuya Okubo , Kenji Suzuki , Yumiko Kawano
发明人： Hideaki Yamasaki , Mitsuhiro Tachibana , Kazuya Okubo , Kenji Suzuki , Yumiko Kawano
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).
摘要翻译：金属膜形成方法包括以下步骤：（a）（s 13，s 15），其顺序地将多种成分气体供应到基底阻挡膜（3），其中至少一种气体包括金属，以及（b）（s 14，s 16）对步骤（a）的成分气体进行真空排气，或者在步骤（a）的成分气体为原料气体之后，用另一种气体代替步骤（a）的成分气体从而在基底阻挡膜（3）上形成极薄的金属薄膜（5）。

6. 发明授权

US06399484B1 Semiconductor device fabricating method and system for carrying out the same 失效
标题翻译：半导体器件制造方法及其实施方法
公开(公告)号：US06399484B1
公开(公告)日：2002-06-04
申请号：US09425971
申请日：1999-10-25
申请人： Hideaki Yamasaki , Satoshi Yonezawa , Susumu Arima , Yumiko Kawano , Mitsuhiro Tachibana , Keizo Hosoda
发明人： Hideaki Yamasaki , Satoshi Yonezawa , Susumu Arima , Yumiko Kawano , Mitsuhiro Tachibana , Keizo Hosoda
IPC分类号： H01L214763
CPC分类号： C23C16/45565 , C23C16/0281 , C23C16/34 , C23C16/4404 , C23C16/4405 , C23C16/4557 , C23C16/45574 , H01L21/28556 , H01L21/28568 , H01L21/32051
摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.
摘要翻译：一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。

7. 发明授权

US06835352B2 Spotting pin 失效
标题翻译：点针
公开(公告)号：US06835352B2
公开(公告)日：2004-12-28
申请号：US10434214
申请日：2003-05-09
申请人： Seiichiro Ito , Mitsuhiro Tachibana
发明人： Seiichiro Ito , Mitsuhiro Tachibana
IPC分类号： B01L302
CPC分类号： B01L3/0244 , B01L3/0248 , B01L3/0262 , B01L2200/0605 , B01L2400/025 , B01L2400/0406 , Y10T436/2575
摘要： A spotting pin 10 capable of spotting equal amounts of a solution in a sequential manner comprises a first member 11 having a solution holding portion 13 formed at the tip thereof for holding a predetermined amount of solution, and a second member 12 having a solution supply portion 14 for holding the solution by a capillary action, the second member adapted to slide along the first member. As the solution supply portion 14 is brought into contact with the solution holding portion 13, the solution enters the solution holding portion 13 from the solution supply portion 14 by a capillary action. As the solution supply portion 14 and the solution holding portion 13 are separated from each other, a predetermined amount of the solution can be carried in the solution holding portion 13. Then, as the solution holding portion 13 is brought into contact with a water-absorbing support 21, a spot 22 of a predetermined amount of the solution can be formed thereon.
摘要翻译：能够顺序地分配等量溶液的点针10包括：第一构件11，其具有形成在其顶端处的用于保持预定量溶液的溶液保持部分13;以及第二构件12，其具有溶液供应部分 14，用于通过毛细作用保持溶液，第二构件适于沿着第一构件滑动。当溶液供应部分14与溶液保持部分13接触时，溶液通过毛细作用从溶液供应部分14进入溶液保留部分13。当溶液供应部分14和溶液保持部分13彼此分离时，可以在溶液保留部分13中承载预定量的溶液。然后，当溶液保持部分13与水溶液保持部分13接触时，吸收支撑件21，可以在其上形成预定量的溶液的点22。

8. 发明授权

US06787349B1 Biochip reader and labeling reagent 失效
标题翻译：生物芯片阅读器和贴标试剂
公开(公告)号：US06787349B1
公开(公告)日：2004-09-07
申请号：US09889747
申请日：2001-07-19
申请人： Kenji Yamamoto , Mitsuhiro Tachibana , Katsuya Mizuno
发明人： Kenji Yamamoto , Mitsuhiro Tachibana , Katsuya Mizuno
IPC分类号： C12M100
CPC分类号： G01N33/543 , B01J2219/00536 , Y10T436/13
摘要： The present invention provides a high-sensitive, inexpensive biochip reader for reading a biochip as compared to a fluorescence method. The biochip reader is provided with an X-Y stage (3) for mounting a biochip (6) and scanning the biochip (6) in a two-dimensional manner, a controller (4) for the X-Y stage, a magnetic sensor (1) for reading the magnetic field strength, an ohmmeter (2), and a computer (5) for signal processing. As a result, a high-performance, inexpensive biochip reader can be provided without using an expensive laser or an expensive optical system, by employing a magnetic sensor and a disk driving mechanism generally used in a hard disk drive and the like.
摘要翻译：与荧光方法相比，本发明提供了一种用于读取生物芯片的高灵敏度，便宜的生物芯片读取器。生物芯片读取器设置有用于安装生物芯片（6）并以二维方式扫描生物芯片（6）的XY台（3），用于XY台的控制器（4），用于读取磁场强度，欧姆表（2）和用于信号处理的计算机（5）。结果，通过采用通常用于硬盘驱动器等中的磁传感器和盘驱动机构，可以提供高性能，廉价的生物芯片读取器，而不需要使用昂贵的激光器或昂贵的光学系统。

9. 发明授权

US06767748B2 Spotting pin, spotting device and method for spotting biomolecules 失效
标题翻译：点针，点样装置和生物分子检测方法
公开(公告)号：US06767748B2
公开(公告)日：2004-07-27
申请号：US10429825
申请日：2003-05-06
申请人： Naoki Yokokawa , Mitsuhiro Tachibana , Hiroshi Kishida
发明人： Naoki Yokokawa , Mitsuhiro Tachibana , Hiroshi Kishida
IPC分类号： G01N128
CPC分类号： B01L3/0244 , B01J19/0046 , B01J2219/00387 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00659 , B01J2219/00689 , B01J2219/00698 , B01J2219/00722 , B01J2219/00725 , C40B40/06 , C40B40/10 , C40B60/14 , G01N35/10 , G01N2035/1037 , Y10T436/2575
摘要： The present invention enables the accurate management of the total number of spotting counts for each spotting pin. An IC chip is installed on the spotting pin to allow the IC chip to accumulate spotting-count information, and during each spotting time the information is loaded up and displayed.
摘要翻译：本发明能够精确地管理每个点针的总点数计数。 IC芯片安装在点焊针上，允许IC芯片累积点样数信息，并在每个发光时间内加载和显示信息。

10. 发明授权

US06737666B1 Apparatus and method for detecting an end point of a cleaning process 有权
标题翻译：用于检测清洁过程的终点的装置和方法
公开(公告)号：US06737666B1
公开(公告)日：2004-05-18
申请号：US09721703
申请日：2000-11-27
申请人： Natsuko Ito , Tsuyoshi Moriya , Fumihiko Uesugi , Yoshinori Kato , Masaru Aomori , Shuji Moriya , Mitsuhiro Tachibana
发明人： Natsuko Ito , Tsuyoshi Moriya , Fumihiko Uesugi , Yoshinori Kato , Masaru Aomori , Shuji Moriya , Mitsuhiro Tachibana
IPC分类号： G01N2149
CPC分类号： H01J37/32935 , C23C16/4405 , C23C16/52 , G01N21/49 , H01J37/32963 , Y10S438/905
摘要： A cleaning end point detecting apparatus detects an end point of a cleaning process in which contamination attached to an inner wall of a reaction chamber is removed by introducing a cleaning gas into the chamber to produce a cluster cloud and detached particles. An irradiating unit irradiates a laser beam onto the cluster cloud and the detached particles within the reaction chamber to produce a scattered laser beam. A monitoring unit monitors the scattered laser beam as a two-dimensional image information. A judging unit judges the end point of the cleaning process on the basis of the two-dimensional image information. Preferably, the judging unit judges, as the end point of the cleaning process, a time instant when neither the detached particles nor the cluster cloud are detected on the basis of the two-dimensional image information.
摘要翻译：清洗终点检测装置检测清洁过程的终点，其中通过将清洁气体引入室中来除去附着在反应室内壁上的污染物，以产生簇云和分离的颗粒。照射单元将激光束照射到聚簇云和反应室内的分离的颗粒以产生散射的激光束。监视单元将散射的激光束监视为二维图像信息。判断单元基于二维图像信息判断清洁处理的结束点。优选地，判断单元基于二维图像信息来判断清除处理的结束点是否没有检测到分离的颗粒和簇云的时刻。

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