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1. 发明授权

US09165816B2 Method for singulating a component composite assembly 有权
标题翻译：单组分复合组件的方法
公开(公告)号：US09165816B2
公开(公告)日：2015-10-20
申请号：US14002754
申请日：2012-03-16
申请人： Heribert Zull , Korbinian Perzlmaier , Andreas Ploessl , Thomas Veit , Mathias Kaempf , Jens Dennemarck , Bernd Boehm
发明人： Heribert Zull , Korbinian Perzlmaier , Andreas Ploessl , Thomas Veit , Mathias Kaempf , Jens Dennemarck , Bernd Boehm
IPC分类号： H01L21/683 , H01L21/78 , H01L21/784 , H01L21/782 , H01L31/18 , H01L33/00 , H01S5/02
CPC分类号： H01L21/6836 , H01L21/78 , H01L21/7806 , H01L21/782 , H01L21/784 , H01L31/18 , H01L33/0079 , H01L33/0095 , H01S5/0201
摘要： A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.
摘要翻译：一种方法涉及将组分复合材料分离成多个组分区域，其中所述组分复合材料具有包括用于产生或用于接收电磁辐射的区域的半导体层序列。组件复合材料安装在刚性副载波上。组分复合材料被分离成多个组分区域，其中从每个组分区域的半导体层序列产生一个半导体本体。从子载波去除分量区域。

2. 发明授权

US09704945B2 Carrier substrate and method for producing semiconductor chips 有权
公开(公告)号：US09704945B2
公开(公告)日：2017-07-11
申请号：US13984081
申请日：2012-02-07
申请人： Ewald Karl Michael Günther , Andreas Plöβl , Heribert Zull , Thomas Veit , Mathias Kämpf , Jens Dennemarck , Bernd Böhm , Korbinian Perzlmaier
发明人： Ewald Karl Michael Günther , Andreas Plöβl , Heribert Zull , Thomas Veit , Mathias Kämpf , Jens Dennemarck , Bernd Böhm , Korbinian Perzlmaier
IPC分类号： H01L29/06 , H01L25/16 , H01L29/66 , H01L23/60 , H01L27/02 , H01L27/14 , H01L27/15 , H01L33/00 , H01L33/64 , H01L33/38
CPC分类号： H01L29/0607 , H01L23/60 , H01L25/167 , H01L27/0248 , H01L27/14 , H01L27/15 , H01L29/66128 , H01L33/0079 , H01L33/382 , H01L33/641 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265
摘要： A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

3. 发明授权

US09324615B2 Method for producing a semiconductor body 有权
标题翻译：半导体本体的制造方法
公开(公告)号：US09324615B2
公开(公告)日：2016-04-26
申请号：US14111655
申请日：2012-04-04
申请人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kämpf , Jens Dennemarck
发明人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kämpf , Jens Dennemarck
IPC分类号： H01L21/00 , H01L21/78 , H01L33/00 , H01S5/02
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01S5/0201 , H01L2924/00
摘要： A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.
摘要翻译：一种制造半导体本体的方法包括提供具有至少两个芯片区域和布置在芯片区域之间的至少一个分离区域的半导体晶片，其中半导体晶片包括层序列，其最外层具有至少在分离区域对电磁辐射透射的透射层，执行以下至少一个：去除分离区域内的透射层，在分离区域内施加吸收层，增加分离区域内的透射层的吸收系数，以及分离通过激光沿分离区域的芯片区域。

4. 发明申请

US20140008770A1 CARRIER SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS 有权
标题翻译：载体基板和制造半导体晶片的方法
公开(公告)号：US20140008770A1
公开(公告)日：2014-01-09
申请号：US13984081
申请日：2012-02-07
申请人： Ewald Karl Michael Günther , Andreas Plößl , Heribert Zull , Thomas Veit , Mathias Kämpf , Jens Dennemarck , Bernd Böhm , Korbinian Perzlmaier
发明人： Ewald Karl Michael Günther , Andreas Plößl , Heribert Zull , Thomas Veit , Mathias Kämpf , Jens Dennemarck , Bernd Böhm , Korbinian Perzlmaier
IPC分类号： H01L29/06 , H01L29/66
CPC分类号： H01L29/0607 , H01L23/60 , H01L25/167 , H01L27/0248 , H01L27/14 , H01L27/15 , H01L29/66128 , H01L33/0079 , H01L33/382 , H01L33/641 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265
摘要： A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.
摘要翻译：载体基板包括第一主面和与第一主面相对的第二主面。在第一主面和第二主面之间形成二极管结构，该二极管结构至少关于电压的一个极性使第一主面与第二主面电绝缘。

5. 发明申请

US20140080286A1 METHOD FOR PRODUCING A SEMICONDUCTOR BODY 有权
标题翻译：生产半导体体的方法
公开(公告)号：US20140080286A1
公开(公告)日：2014-03-20
申请号：US14111655
申请日：2012-04-04
申请人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kampf , Jens Dennemarck
发明人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kampf , Jens Dennemarck
IPC分类号： H01L21/78
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01S5/0201 , H01L2924/00
摘要： A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.
摘要翻译：一种制造半导体本体的方法包括提供具有至少两个芯片区域和布置在芯片区域之间的至少一个分离区域的半导体晶片，其中半导体晶片包括层序列，其最外层具有至少在分离区域对电磁辐射透射的透射层，执行以下至少一个：去除分离区域内的透射层，在分离区域内施加吸收层，增加分离区域内的透射层的吸收系数，以及分离通过激光沿分离区域的芯片区域。

6. 发明申请

US20140319566A1 LIGHT EMITTING DIODE CHIP 有权
标题翻译：发光二极管芯片
公开(公告)号：US20140319566A1
公开(公告)日：2014-10-30
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
IPC分类号： H01L33/60 , H01L33/56
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译：发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。

7. 发明申请

US20120049228A1 OPTOELECTRONIC SEMICONDUCTOR BODIES HAVING A REFLECTIVE LAYER SYSTEM 有权
标题翻译：具有反射层系统的光电子半导体体
公开(公告)号：US20120049228A1
公开(公告)日：2012-03-01
申请号：US13255341
申请日：2010-04-26
申请人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
发明人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
IPC分类号： H01L33/60
CPC分类号： H01L31/02161 , H01L31/0232 , H01L33/46 , H01S5/18369
摘要： An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first radiation-permeable layer (21), which adjoins the semiconductor layer sequence (10), and a metal layer (23) on the side of the first radiation-permeable layer (21) facing away from the semiconductor layer sequence (10). The first radiation-permeable layer (21) contains a first dielectric material. Between the first radiation-permeable layer (21) and the metal layer (23) there is disposed a second radiation-permeable layer (22) which contains an adhesion-improving material. The metal layer (23) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer (23) is improved in comparison with the adhesion on the first dielectric material.
摘要翻译：描述了具有有源半导体层序列（10）和反射层系统（20）的光电半导体本体（1）。反射层系统（20）包括邻接半导体层序列（10）的第一辐射透射层（21）和位于第一辐射透过层（21）侧面上的金属层（23）从半导体层序列（10）。第一辐射透过层（21）包含第一电介质材料。在第一辐射透过层（21）和金属层（23）之间设置有包含粘合改进材料的第二辐射透过层（22）。将金属层（23）直接施加到粘合改进材料上。粘附改善材料与第一介电材料不同，并且选择为与第一电介质材料上的粘附性相比，金属层（23）的粘附性得到改善。

8. 发明授权

US09577165B2 Light emitting diode chip 有权
标题翻译：发光二极管芯片
公开(公告)号：US09577165B2
公开(公告)日：2017-02-21
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
IPC分类号： H01L33/60 , H01L33/40 , H01L33/42 , H01L33/56 , H01L33/38
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译：发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。

9. 发明授权

US09012940B2 Optoelectronic semiconductor bodies having a reflective layer system 有权
标题翻译：具有反射层系统的光电半导体体
公开(公告)号：US09012940B2
公开(公告)日：2015-04-21
申请号：US13255341
申请日：2010-04-26
申请人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
发明人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
IPC分类号： H01L33/10 , H01L31/0216 , H01L31/0232 , H01L33/46 , H01S5/183
CPC分类号： H01L31/02161 , H01L31/0232 , H01L33/46 , H01S5/18369
摘要： An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first radiation-permeable layer (21), which adjoins the semiconductor layer sequence (10), and a metal layer (23) on the side of the first radiation-permeable layer (21) facing away from the semiconductor layer sequence (10). The first radiation-permeable layer (21) contains a first dielectric material. Between the first radiation-permeable layer (21) and the metal layer (23) there is disposed a second radiation-permeable layer (22) which contains an adhesion-improving material. The metal layer (23) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer (23) is improved in comparison with the adhesion on the first dielectric material.
摘要翻译：描述了具有有源半导体层序列（10）和反射层系统（20）的光电半导体本体（1）。反射层系统（20）包括邻接半导体层序列（10）的第一辐射透射层（21）和位于第一辐射透过层（21）侧面上的金属层（23）从半导体层序列（10）。第一辐射透过层（21）包含第一电介质材料。在第一辐射透过层（21）和金属层（23）之间设置有包含粘合改进材料的第二辐射透过层（22）。将金属层（23）直接施加到粘合改进材料上。粘附改善材料与第一介电材料不同，并且选择为与第一电介质材料上的粘附性相比，金属层（23）的粘附性得到改善。

10. 发明授权

US08896019B2 Thin-film encapsulation, optoelectronic semiconductor body comprising a thin-film encapsulation and method for producing a thin-film encapsulation 有权
标题翻译：薄膜封装，包括薄膜封装的光电半导体主体以及用于制造薄膜封装的方法
公开(公告)号：US08896019B2
公开(公告)日：2014-11-25
申请号：US13821281
申请日：2011-08-16
申请人： Franz Eberhard , Sebastian Taeger , Korbinian Perzlmaier
发明人： Franz Eberhard , Sebastian Taeger , Korbinian Perzlmaier
IPC分类号： H01L33/44 , H01L33/52 , H01L33/56 , H01L33/42 , H01L33/46
CPC分类号： H01L33/52 , H01L33/42 , H01L33/46 , H01L33/56 , H01L2924/0002 , H01L2933/0016 , H01L2933/005 , H01L2924/00
摘要： A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.
摘要翻译：用于光电子半导体器件的薄膜封装包括通过PVD方法沉积的PVD层和通过CVD法沉积的CVD层，其中CVD层直接施加在PVD层上，并且CVD层被蚀刻回 CVD层仅填充PVD层中的弱点。

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