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1. 发明申请

US20140080286A1 METHOD FOR PRODUCING A SEMICONDUCTOR BODY 有权
标题翻译：生产半导体体的方法
公开(公告)号：US20140080286A1
公开(公告)日：2014-03-20
申请号：US14111655
申请日：2012-04-04
申请人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kampf , Jens Dennemarck
发明人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kampf , Jens Dennemarck
IPC分类号： H01L21/78
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01S5/0201 , H01L2924/00
摘要： A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.
摘要翻译：一种制造半导体本体的方法包括提供具有至少两个芯片区域和布置在芯片区域之间的至少一个分离区域的半导体晶片，其中半导体晶片包括层序列，其最外层具有至少在分离区域对电磁辐射透射的透射层，执行以下至少一个：去除分离区域内的透射层，在分离区域内施加吸收层，增加分离区域内的透射层的吸收系数，以及分离通过激光沿分离区域的芯片区域。

2. 发明授权

US09324615B2 Method for producing a semiconductor body 有权
标题翻译：半导体本体的制造方法
公开(公告)号：US09324615B2
公开(公告)日：2016-04-26
申请号：US14111655
申请日：2012-04-04
申请人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kämpf , Jens Dennemarck
发明人： Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kämpf , Jens Dennemarck
IPC分类号： H01L21/00 , H01L21/78 , H01L33/00 , H01S5/02
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01S5/0201 , H01L2924/00
摘要： A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.
摘要翻译：一种制造半导体本体的方法包括提供具有至少两个芯片区域和布置在芯片区域之间的至少一个分离区域的半导体晶片，其中半导体晶片包括层序列，其最外层具有至少在分离区域对电磁辐射透射的透射层，执行以下至少一个：去除分离区域内的透射层，在分离区域内施加吸收层，增加分离区域内的透射层的吸收系数，以及分离通过激光沿分离区域的芯片区域。

3. 发明申请

US20120049228A1 OPTOELECTRONIC SEMICONDUCTOR BODIES HAVING A REFLECTIVE LAYER SYSTEM 有权
标题翻译：具有反射层系统的光电子半导体体
公开(公告)号：US20120049228A1
公开(公告)日：2012-03-01
申请号：US13255341
申请日：2010-04-26
申请人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
发明人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
IPC分类号： H01L33/60
CPC分类号： H01L31/02161 , H01L31/0232 , H01L33/46 , H01S5/18369
摘要： An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first radiation-permeable layer (21), which adjoins the semiconductor layer sequence (10), and a metal layer (23) on the side of the first radiation-permeable layer (21) facing away from the semiconductor layer sequence (10). The first radiation-permeable layer (21) contains a first dielectric material. Between the first radiation-permeable layer (21) and the metal layer (23) there is disposed a second radiation-permeable layer (22) which contains an adhesion-improving material. The metal layer (23) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer (23) is improved in comparison with the adhesion on the first dielectric material.
摘要翻译：描述了具有有源半导体层序列（10）和反射层系统（20）的光电半导体本体（1）。反射层系统（20）包括邻接半导体层序列（10）的第一辐射透射层（21）和位于第一辐射透过层（21）侧面上的金属层（23）从半导体层序列（10）。第一辐射透过层（21）包含第一电介质材料。在第一辐射透过层（21）和金属层（23）之间设置有包含粘合改进材料的第二辐射透过层（22）。将金属层（23）直接施加到粘合改进材料上。粘附改善材料与第一介电材料不同，并且选择为与第一电介质材料上的粘附性相比，金属层（23）的粘附性得到改善。

4. 发明授权

US09012940B2 Optoelectronic semiconductor bodies having a reflective layer system 有权
标题翻译：具有反射层系统的光电半导体体
公开(公告)号：US09012940B2
公开(公告)日：2015-04-21
申请号：US13255341
申请日：2010-04-26
申请人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
发明人： Robert Walter , Vincent Grolier , Michael Schmal , Korbinian Perzlmaier , Franz Eberhard
IPC分类号： H01L33/10 , H01L31/0216 , H01L31/0232 , H01L33/46 , H01S5/183
CPC分类号： H01L31/02161 , H01L31/0232 , H01L33/46 , H01S5/18369
摘要： An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first radiation-permeable layer (21), which adjoins the semiconductor layer sequence (10), and a metal layer (23) on the side of the first radiation-permeable layer (21) facing away from the semiconductor layer sequence (10). The first radiation-permeable layer (21) contains a first dielectric material. Between the first radiation-permeable layer (21) and the metal layer (23) there is disposed a second radiation-permeable layer (22) which contains an adhesion-improving material. The metal layer (23) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer (23) is improved in comparison with the adhesion on the first dielectric material.
摘要翻译：描述了具有有源半导体层序列（10）和反射层系统（20）的光电半导体本体（1）。反射层系统（20）包括邻接半导体层序列（10）的第一辐射透射层（21）和位于第一辐射透过层（21）侧面上的金属层（23）从半导体层序列（10）。第一辐射透过层（21）包含第一电介质材料。在第一辐射透过层（21）和金属层（23）之间设置有包含粘合改进材料的第二辐射透过层（22）。将金属层（23）直接施加到粘合改进材料上。粘附改善材料与第一介电材料不同，并且选择为与第一电介质材料上的粘附性相比，金属层（23）的粘附性得到改善。

5. 发明授权

US08896019B2 Thin-film encapsulation, optoelectronic semiconductor body comprising a thin-film encapsulation and method for producing a thin-film encapsulation 有权
标题翻译：薄膜封装，包括薄膜封装的光电半导体主体以及用于制造薄膜封装的方法
公开(公告)号：US08896019B2
公开(公告)日：2014-11-25
申请号：US13821281
申请日：2011-08-16
申请人： Franz Eberhard , Sebastian Taeger , Korbinian Perzlmaier
发明人： Franz Eberhard , Sebastian Taeger , Korbinian Perzlmaier
IPC分类号： H01L33/44 , H01L33/52 , H01L33/56 , H01L33/42 , H01L33/46
CPC分类号： H01L33/52 , H01L33/42 , H01L33/46 , H01L33/56 , H01L2924/0002 , H01L2933/0016 , H01L2933/005 , H01L2924/00
摘要： A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.
摘要翻译：用于光电子半导体器件的薄膜封装包括通过PVD方法沉积的PVD层和通过CVD法沉积的CVD层，其中CVD层直接施加在PVD层上，并且CVD层被蚀刻回 CVD层仅填充PVD层中的弱点。

6. 发明申请

US20130292736A1 THIN-FILM ENCAPSULATION, OPTOELECTRONIC SEMICONDUCTOR BODY COMPRISING A THIN-FILM ENCAPSULATION AND METHOD FOR PRODUCING A THIN-FILM ENCAPSULATION 有权
标题翻译：薄膜封装，包含薄膜封装的光电子半导体体以及生产薄膜封装的方法
公开(公告)号：US20130292736A1
公开(公告)日：2013-11-07
申请号：US13821281
申请日：2011-08-16
申请人： Franz Eberhard , Sebastian Taeger , Korbinian Perzlmaier
发明人： Franz Eberhard , Sebastian Taeger , Korbinian Perzlmaier
IPC分类号： H01L31/0203
CPC分类号： H01L33/52 , H01L33/42 , H01L33/46 , H01L33/56 , H01L2924/0002 , H01L2933/0016 , H01L2933/005 , H01L2924/00
摘要： A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.
摘要翻译：用于光电子半导体器件的薄膜封装包括通过PVD方法沉积的PVD层和通过CVD法沉积的CVD层，其中CVD层直接施加在PVD层上，并且CVD层被蚀刻回 CVD层仅填充PVD层中的弱点。

7. 发明授权

US07885302B2 Integrated tapered diode laser arrangement and method for producing it 有权
标题翻译：集成锥形二极管激光器布置及其制造方法
公开(公告)号：US07885302B2
公开(公告)日：2011-02-08
申请号：US12072761
申请日：2008-02-27
申请人： Franz Eberhard , Thomas Schlereth , Wolfgang Schmid
发明人： Franz Eberhard , Thomas Schlereth , Wolfgang Schmid
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/1064 , H01S5/162 , H01S5/2072 , H01S5/3414 , H01S5/343
摘要： An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.
摘要翻译：集成的锥形二极管激光装置包括喷射器区域（2）和与喷射器区域光学耦合并在横截面中膨胀的区域（3）。所述区域（2,3）中的至少一个具有多个半导体材料的量子阱结构，其中半导体材料至少在一个区域（21,31）中混合。混合区域（21,31）具有比非混合区域更大的电气带隙。

8. 发明申请

US20070238210A1 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US20070238210A1
公开(公告)日：2007-10-11
申请号：US11810326
申请日：2007-06-04
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译：公开了一种用于制造光电子部件的方法。该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小，并去除掩模层。

9. 发明授权

US07260129B2 Multipartite laser 有权
标题翻译：多部分激光
公开(公告)号：US07260129B2
公开(公告)日：2007-08-21
申请号：US10774727
申请日：2004-02-09
申请人： Martin Behringer , Franz Eberhard , Johann Luft
发明人： Martin Behringer , Franz Eberhard , Johann Luft
IPC分类号： H01S5/00
CPC分类号： H01S5/1021 , H01S5/14 , H01S5/141 , H01S5/18305 , H01S5/18311 , H01S5/4006 , H01S2301/18
摘要： A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.
摘要翻译：用于发射激光辐射的装置包括至少一个具有谐振器的半导体激光器和设置在谐振器内的泵浦有源区。该区域通过自由辐射区域被细分为至少两个空间分离的有源区域，而没有横向波导。优选地，激光器是至少两个串联布置的半导体激光器，一排或一条线，每个在至少一侧具有抗反射涂层。激光器在激光器的端部具有串联布置的外镜元件，并且外镜元件形成谐振器。激光器配置包括两个相对的半导体激光器，在每个情况下，基本模式被成像到相对的半导体激光器的有源区。激光器配置有一个新兴的激光束，几乎没有发散。

10. 发明授权

US08581279B2 Light-emitting diode chip comprising a contact structure 有权
公开(公告)号：US08581279B2
公开(公告)日：2013-11-12
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

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