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1. 发明授权

US5230965A High density interconnect with electroplated conductors 失效
标题翻译：与电镀导体的高密度互连
公开(公告)号：US5230965A
公开(公告)日：1993-07-27
申请号：US895584
申请日：1992-06-08
申请人： Herbert S. Cole, Jr. , James W. Rose
发明人： Herbert S. Cole, Jr. , James W. Rose
IPC分类号： C25D5/02 , H01L21/48 , H01L23/538 , H05K3/10 , H05K3/38
CPC分类号： C25D5/024 , C25D5/022 , H01L21/4846 , H01L23/5389 , H05K3/108 , H01L2924/0002 , H05K2203/0315 , H05K2203/0361 , H05K2203/107 , H05K3/388 , Y10S428/935 , Y10T428/12396 , Y10T428/12458 , Y10T428/1259
摘要： Selective electrolytic deposition on either conductive or non-conductive bodies is provided by forming a layer of a metal which forms a plating-preventing compound on the surface of the body to be plated, and selectively interdiffusing a plating-enabling metal into the surface of that compound-forming metal in those locations where plating is desired and electroplating the body. The interdiffusion may be done before or after the plating-preventing compound has formed on the surface of the compound-forming layer. During the electroplating, the electroplating metal deposits only in those locations where the plating-enabling metal has interdiffused with the compound-forming metal. At the end of the process, the compound-forming metal may be removed in those locations where it is not covered by the electroplated metal to provide a plurality of separate plated conductors.
摘要翻译：在导电体或非导电体上的选择性电解沉积是通过在被电镀体的表面上形成一层形成电镀防止化合物的金属来提供的，并且将镀覆金属选择性地相互扩散到该镀层的表面中在需要电镀的地方进行化合物形成金属，并对其进行电镀。可以在化合物形成层的表面上形成电镀防止化合物之前或之后进行相互扩散。在电镀期间，电镀金属只能沉积在可镀金属与化合物形成金属相互扩散的位置。在该过程结束时，化合物形成金属可以在未被电镀金属覆盖的那些位置处被去除以提供多个单独的电镀导体。

2. 发明授权

US5127998A Area-selective metallization process 失效
标题翻译：区域选择性金属化过程
公开(公告)号：US5127998A
公开(公告)日：1992-07-07
申请号：US459844
申请日：1990-01-02
申请人： Herbert S,. Cole, Jr. , James W. Rose
发明人： Herbert S,. Cole, Jr. , James W. Rose
IPC分类号： C23C14/04 , C23C14/58 , C25D5/02 , H01L21/48 , H01L23/538 , H05K3/10 , H05K3/38
CPC分类号： H01L23/5389 , C25D5/022 , C25D5/50 , C25D7/123 , H01L21/4846 , H05K3/108 , H01L2924/0002 , H05K2203/0315 , H05K2203/0361 , H05K2203/107 , H05K3/388
摘要： Selective electrolytic deposition on either conductive or non-conductive bodies is provided by forming a layer of a metal which forms a plating-preventing compound on the surface of the body to be plated, and selectively interdiffusing a plating-enabling metal into the surface of that compound-forming metal in those locations where plating is desired and electroplating the body. The interdiffusion may be done before or after the plating-preventing compound has formed on the surface of the compound-forming layer. During the electroplating, the electroplating metal deposits only in those locations where the plating-enabling metal has interdiffused with the compound-forming metal. At the end of the process, the compound-forming metal may be removed in those locations where it is not covered by the electroplated metal to provide a plurality of separate plated conductors.

3. 发明授权

US5338975A High density interconnect structure including a spacer structure and a gap 失效
标题翻译：包括间隔结构和间隙的高密度互连结构
公开(公告)号：US5338975A
公开(公告)日：1994-08-16
申请号：US546965
申请日：1990-07-02
申请人： Herbert S. Cole, Jr. , James W. Rose
发明人： Herbert S. Cole, Jr. , James W. Rose
IPC分类号： H01L23/522 , H01L23/48 , H01L29/46 , H01L29/54
CPC分类号： H01L24/24 , H01L23/5222 , H01L24/82 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/1423 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H01L2924/3011
摘要： A high frequency electronic component which is interconnected with other components through a high density interconnect structure sees only an air dielectric constant in the high density interconnect structure because a spacer structure disposed on the electronic component spaces the dielectric of the high density interconnect structure from the surface of the electronic component by a sufficient distance that the higher dielectric constant of the polymer dielectric layers of the high density interconnect structure only minimally affects the operating characteristics of the electronic components.
摘要翻译：通过高密度互连结构与其他部件互连的高频电子部件仅在高密度互连结构中仅看到空气介电常数，因为设置在电子部件上的间隔结构将高密度互连结构的电介质从表面的电子部件的距离使得高密度互连结构的聚合物电介质层的较高介电常数仅最小程度地影响电子部件的操作特性。

4. 发明授权

US5157589A Mutliple lamination high density interconnect process and structure employing thermoplastic adhesives having sequentially decreasing T.sub.G ' s 失效
标题翻译： MUTLIPLE LAMINATION高密度互连过程和结构使用具有顺序降低的热塑性粘合剂
公开(公告)号：US5157589A
公开(公告)日：1992-10-20
申请号：US546963
申请日：1990-07-02
申请人： Herbert S. Cole, Jr. , James W. Rose , Charles W. Eichelberger , Robert J. Wojnarowski
发明人： Herbert S. Cole, Jr. , James W. Rose , Charles W. Eichelberger , Robert J. Wojnarowski
IPC分类号： H01L23/13 , H01L23/498 , H01L23/538 , H01L25/04 , H01L25/18 , H05K1/18 , H05K3/38 , H05K3/46
CPC分类号： H01L23/5389 , H01L23/13 , H01L23/49822 , H01L24/24 , H01L24/82 , H05K3/4635 , H05K3/4673 , H01L2224/2402 , H01L2224/24227 , H01L2224/73267 , H01L2224/82039 , H01L2224/92244 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H05K1/185 , H05K2201/0129 , H05K2201/0154 , H05K2201/0195 , H05K3/386 , H05K3/4644
摘要： A high density interconnect structure incorporating a plurality of laminated dieletric layers is fabricated using thermoplastic adhesive layers of progressively lower glass transition temperature in order to maintain the stability of the already fabricated structure during the addition of the later laminations. This structure also facilitates the removal of only a portion of the high density interconnect structure where a fault in the system can be corrected in one of the upper layers of the high density interconnect structure.

5. 发明授权

US5182188A Method of developing a self-developing resist 失效
标题翻译：开发自发光抗蚀剂的方法
公开(公告)号：US5182188A
公开(公告)日：1993-01-26
申请号：US546230
申请日：1990-06-29
申请人： Herbert S. Cole, Jr. , James W. Rose , Renato Guida , Yung S. Liu
发明人： Herbert S. Cole, Jr. , James W. Rose , Renato Guida , Yung S. Liu
IPC分类号： G03F7/20 , H05K3/00
CPC分类号： G03F7/2053 , H05K3/0082 , Y10S430/146
摘要： Self-developing photoresists are developed by exposing the substrate on which they are exposed to a light beam or other energy source which is absorbed by the substrate and which raises the substrate temperature to the thermal decomposition temperature of the overlying photoresist. This exposure may be done through the photoresist layer with a light beam having a frequency to which the photoresist is substantially transparent or may be done from the backside of the substrate using a light beam which is absorbed by the substrate itself if it is sufficiently thin, or by a thin layer disposed on a transparent substrate.
摘要翻译：通过将它们暴露在其上的衬底暴露于由衬底吸收的光束或其他能量源并且将衬底温度升高到覆盖的光致抗蚀剂的热分解温度来开发自显影光刻胶。这种曝光可以通过具有光致抗蚀剂基本上透明的频率的光束来进行，或者可以使用如由足够薄的衬底自身吸收的光束从衬底的背面进行，或通过设置在透明基板上的薄层。

6. 发明授权

US5178976A Technique for preparing a photo-mask for imaging three-dimensional objects 失效
标题翻译：制备用于成像三维物体的光罩的技术
公开(公告)号：US5178976A
公开(公告)日：1993-01-12
申请号：US580058
申请日：1990-09-10
申请人： James W. Rose , Bradley R. Karas , Lubomry S. Onyshkevych
发明人： James W. Rose , Bradley R. Karas , Lubomry S. Onyshkevych
IPC分类号： G03F1/00 , H05K1/00 , H05K3/00
CPC分类号： H05K3/0002 , G03F1/70 , H05K1/0284 , H05K2203/056 , H05K2203/107
摘要： A method for the preparation a photo-mask used for photo-imaging selected areas on the surfaces of a three-dimensional printed circuit board substrate. The photo-mask comprises an opaque layer, opaque and degradation resistant to UV light, having at least one side with a contoured shape conforming to the surface irregularities on the surfaces of the three-dimensional substrate being photo-imaged. A membrane transparent and degradation resistant to UV light, having at least one side cemented to the side of the opaque layer not in contact with the surfaces of the three-dimensional substrate being photo-imaged. A pattern of grooves positioned on the opaque layer allow transmission of UV light during the photo-imaging of the surfaces of the three-dimensiional substrate. The pattern of grooves is in accordance with a conductive metal trace pattern desired on the surfaces of the three-dimensional printed circuit board substrate. The photo-mask is prepared by first forming an opaque material layer on the surfaces of the three-dimensional substrate, followed by a membrane material to form the membrane. The pattern of grooves is created by ablating the opaque layer in selected areas by means of a laser beam from a laser moved in a boustrophedonous manner.
摘要翻译：一种用于制备用于对三维印刷电路板基板的表面上的选定区域进行光学成像的光掩模的方法。所述光掩模包括不透明的并且对UV光具有耐劣化性的不透明层，其具有至少一个侧面，所述至少一个侧面具有与所述三维基板的表面上的表面不规则性相一致的光学成像。具有至少一面粘合到不透明层的不与三维基板的表面接触的一面的紫外光透明和降解的膜被光成像。定位在不透明层上的凹槽的图案允许在三维基底的表面的光成像期间透射UV光。凹槽的图案与三维印刷电路板基板的表面上所需的导电金属迹线图案相一致。通过首先在三维基板的表面上形成不透明材料层，然后形成膜材料来制备光掩模。凹槽的图案通过借助于以双向方式移动的激光器的激光束烧蚀选定区域中的不透明层而产生。

7. 发明授权

US5008049A Method for sealing an electronic device containing a fluid material 失效
标题翻译：密封包含流体材料的电子装置的方法
公开(公告)号：US5008049A
公开(公告)日：1991-04-16
申请号：US410398
申请日：1989-09-21
申请人： James W. Rose , Theresa A. Sitnik
发明人： James W. Rose , Theresa A. Sitnik
IPC分类号： B29C65/14 , B29C65/16 , B29C67/00 , G02F1/1341
CPC分类号： B29C65/4845 , B29C65/1435 , B29C65/1483 , B29C65/542 , B29C67/004 , G02F1/1341 , B29C65/1406 , B29C65/1606 , B29C65/1635 , B29C65/1683
摘要： A device containing a fluid material is sealed by sealant material placed essentially completely around the periphery of the device to join spaced apart first and second members of the device; and aperture is formed through the seal and the device interior is evacuated. Then fluid material is introduced into the device interior through the aperture and only a limited region of the device, confined substantially to the aperture is exposed to electromagnetic radiation from a laser or the like, to hermetically close the aperture when a photoreactive adhesive is injected into the aperture to cause the adhesive to solidify when contacted by the electromagnetic radiation. In an alternate embodiment, the aperture is filled with a plug of thermoplastic material, which is then selectively heat treated by a laser or the like to cause the plug to bind to the aperture boundary and hermetically enclose the fluid material.
摘要翻译：包含流体材料的装置由基本上完全围绕装置的周边放置的密封剂材料密封，以连接装置的间隔开的第一和第二构件; 并且通过密封件形成孔，并且将装置内部抽真空。然后，流体材料通过孔被引入装置内部，并且仅当基本上限定在孔的受限区域暴露于来自激光器等的电磁辐射时，当将光反应粘合剂注入时气密地关闭孔当电磁辐射接触时导致粘合剂固化的孔。在替代实施例中，孔用一个热塑性材料塞填充，然后用激光等进行选择性热处理，以使塞子与孔口边界结合并气密地封闭流体材料。

8. 发明授权

US06819001B2 Interposer, interposer package and device assembly employing the same 有权
标题翻译：插入器，插入器封装和采用该插入器的器件组件
公开(公告)号：US06819001B2
公开(公告)日：2004-11-16
申请号：US10388997
申请日：2003-03-14
申请人： William E. Burdick, Jr. , James W. Rose
发明人： William E. Burdick, Jr. , James W. Rose
IPC分类号： H01L2348
CPC分类号： H01L23/49827 , H01L23/36 , H01L24/48 , H01L2224/05599 , H01L2224/16 , H01L2224/16225 , H01L2224/45099 , H01L2224/48091 , H01L2224/85399 , H01L2924/00014 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： An interposer, interposer package and device assembly employing the same are provided. The interposer has a substrate formed of a semiconductor material, with first input/output contacts disposed over a first main surface thereof and second input/output contacts disposed over a second main surface thereof. The second input/output contacts are electrically connected to the first input/output contacts. The first input/output contacts disposed over the first main surface of the interposer substrate are for attachment to input/output pads of a device to which the interposer is to be attached. The second input/output contacts disposed over the second main surface of the interposer substrate facilitate electrical coupling to a component to which the interposer is also to be attached.
摘要翻译：提供了一种插入器，插入器封装和采用其的器件组件。插入器具有由半导体材料形成的衬底，第一输入/输出触点设置在其第一主表面上，第二输入/输出触点设置在其第二主表面上。第二输入/输出触点电连接到第一输入/输出触点。设置在插入器基板的第一主表面上的第一输入/输出触点用于附接到要插入插入器的装置的输入/输出焊盘。布置在插入器基板的第二主表面上的第二输入/输出触点有助于电连接到插入器也要附接的部件。

9. 发明授权

US5471421A Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage 失效
标题翻译：使用具有减少的电荷泄漏的低功率/低阈值CMOS传输晶体管的存储单元
公开(公告)号：US5471421A
公开(公告)日：1995-11-28
申请号：US358202
申请日：1994-12-16
申请人： James W. Rose , Godfrey P. D'Souza , Jonathan J. Stinehelfer , James F. Testa
发明人： James W. Rose , Godfrey P. D'Souza , Jonathan J. Stinehelfer , James F. Testa
IPC分类号： G11C11/412 , G11C11/404 , G11C11/407 , G11C11/418 , G11C13/00
CPC分类号： G11C11/404 , G11C11/418
摘要： A storage cell includes a first bit line, a storage circuit, and a pass transistor. The storage circuit has a first storage node for holding a logic state indicative of a logic value. The pass transistor is coupled to the first bit line and the first storage node for establishing a conduction path therebetween. The pass transistor receives a bias voltage to switch the pass transistor into a substantially nonconducting state when the storage cell is not being accessed. The reverse bias on the first transistor substantially reduces the leakage current through the pass transistor.
摘要翻译：存储单元包括第一位线，存储电路和传输晶体管。存储电路具有用于保持指示逻辑值的逻辑状态的第一存储节点。传输晶体管耦合到第一位线和第一存储节点，用于在它们之间建立传导路径。当存储单元不被访问时，传输晶体管接收偏置电压以将传输晶体管切换到基本上非导通状态。第一晶体管上的反向偏压基本上减小了通过晶体管的漏电流。

10. 发明授权

US5270371A Adhesive compositions for electronic packages 失效
标题翻译：电子封装用粘合剂组合物
公开(公告)号：US5270371A
公开(公告)日：1993-12-14
申请号：US955776
申请日：1992-10-02
申请人： Herbert S. Cole , James W. Rose
发明人： Herbert S. Cole , James W. Rose
IPC分类号： C08G73/10 , H01L23/498 , C08K5/07 , C08K3/10 , C08K3/36
CPC分类号： H01L23/49883 , C08G73/1064 , H01L2924/0002
摘要： Chip adhesives with improved working time comprise a polyetherimide prepared from 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride and bis(4-aminophenyl) sulfone; at least one of silica and conductive metal particles, especially silver particles; and at least one substituted acetophenone as solvent. The preferred substituted acetophenone is 4-methylacetophenone.
摘要翻译：具有改进的工作时间的片状粘合剂包括由2,2-双[4-（3,4-二羧基苯氧基）苯基]丙烷二酐和双（4-氨基苯基）砜制备的聚醚酰亚胺; 二氧化硅和导电金属颗粒中的至少一种，特别是银颗粒; 和至少一种取代的苯乙酮作为溶剂。优选的取代苯乙酮是4-甲基苯乙酮。

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