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1. 发明申请

US20050275502A1 Method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, and thin-layer component 审中-公开
标题翻译：用于制造薄层部件，特别是薄层高压传感器和薄层部件的方法
公开(公告)号：US20050275502A1
公开(公告)日：2005-12-15
申请号：US11147496
申请日：2005-06-07
申请人： Herbert Goebel , Harald Wanka , Andre Kretschmann , Ralf Henn , Joachim Gluck , Horst Muenzel
发明人： Herbert Goebel , Harald Wanka , Andre Kretschmann , Ralf Henn , Joachim Gluck , Horst Muenzel
IPC分类号： G01L9/04 , G01L9/00 , H01C10/10
CPC分类号： G01L9/0054
摘要： Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges, is deposited on an electrically non-conductive surface of a diaphragm layer, a contact-layer system for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements are situated between each region of the contact-layer system and the diaphragm layer. This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.
摘要翻译：提出了制造薄层部件，特别是薄层高压传感器以及薄层部件的方法，其中用于形成测量元件的电阻层，特别是应变计沉积在隔膜层的非导电表面，用于以这样一种方式使沉积在测量元件上的测量元件电接触的接触层系统，使测量元件的区域位于接触层系统的每个区域之间和隔膜层。这用于特别提供一种高压传感器，其中接触层系统的触点的电容被设计为对称的。

2. 发明授权

US07012026B2 Method for producing defined polycrystalline silicon areas in an amorphous silicon layer 失效
标题翻译：在非晶硅层中制造限定多晶硅区域的方法
公开(公告)号：US07012026B2
公开(公告)日：2006-03-14
申请号：US10203596
申请日：2001-01-26
申请人： Walter Emili , Herbert Goebel , Harald Wanka
发明人： Walter Emili , Herbert Goebel , Harald Wanka
IPC分类号： H01L21/302
CPC分类号： H01L21/02686 , G01L9/0042 , H01L21/02532 , H01L21/02678 , H01L21/2026
摘要： A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, in which a substrate is provided with an insulating layer and a layer of doped amorphous silicon, electromagnetic irradiation is performed using a laser source to produce the electrically conducting regions, and a shadow mask is positioned between the laser source and the substrate having the layer for definition of the contours of the electrically conducting regions.
摘要翻译：描述了制造明确定义的多晶硅区域的方法，特别是为了制造导电区域，其中衬底设置有绝缘层和掺杂非晶硅层，使用激光源进行电磁辐射以产生导电区域和荫罩位于激光源和具有用于定义导电区域轮廓的层的基板之间。

3. 发明授权

US06667683B1 Planar trimming resistor, applications and method for its manufacture 失效
标题翻译：平面微调电阻，其制造的应用和方法
公开(公告)号：US06667683B1
公开(公告)日：2003-12-23
申请号：US09687005
申请日：2000-10-13
申请人： Walter Emili , Herbert Goebel , Harald Wanka
发明人： Walter Emili , Herbert Goebel , Harald Wanka
IPC分类号： H01C1000
CPC分类号： H01C7/22
摘要： A trimming resistor is manufactured by depositing a resistive layer on a substrate, with a passivation layer having windows, and a contact layer which is in contact with the resistive layer via the windows. Trimming is carried out by interrupting the contact layer at narrow spots or regions. This invention has application for the manufacture of high-pressure sensors.
摘要翻译：通过在基板上沉积电阻层，具有具有窗口的钝化层以及通过窗口与电阻层接触的接触层来制造微调电阻器。通过在窄点或区域中断接触层进行修整。本发明适用于制造高压传感器。

4. 发明授权

US5766973A Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates 失效
标题翻译：通过引入晶体失调结构和改变扩散速率来制造半导体装置的方法
公开(公告)号：US5766973A
公开(公告)日：1998-06-16
申请号：US732758
申请日：1996-10-18
申请人： Herbert Goebel , Vesna Goebel
发明人： Herbert Goebel , Vesna Goebel
IPC分类号： H01L21/225 , H01L21/329 , H01L29/06 , H01L29/861 , H01L29/866
CPC分类号： H01L29/66136 , H01L21/2252 , H01L29/0615 , H01L29/0661 , H01L29/8611 , Y10S148/174
摘要： In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.
摘要翻译：在半导体装置和半导体装置的制造方法中，通过将晶体无序结构引入到硅晶体中来实现扩散速率的变化。半导体结构包括具有形成p-n结的第一层和第二层的半导体晶片。由于扩散速率变化，边缘区域中第二层的掺杂剂浓度的梯度比仅在中间区域更大（仅）。结果，在比在中间区域更高的电压下达到边缘区域中的p-n结的击穿。

5. 发明授权

US5686319A Method for producing a diode 失效
标题翻译：制造二极管的方法
公开(公告)号：US5686319A
公开(公告)日：1997-11-11
申请号：US544417
申请日：1995-10-10
申请人： Herbert Goebel , Vesna Gobel
发明人： Herbert Goebel , Vesna Gobel
IPC分类号： H01L21/304 , H01L21/329 , H01L29/866 , H01L21/04
CPC分类号： H01L29/66106 , H01L29/866 , Y10S148/012 , Y10S148/039 , Y10S438/983
摘要： In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.
摘要翻译：在制造二极管的方法中，第一，强正掺杂硅晶片根据硅熔融法结合到第二弱负掺杂硅晶片，随后弱负掺杂的第二硅晶片被研磨到预定的厚度。含有少量砷的铬层用于负掺杂的第二硅晶片上的电阻接触。以这种方式，获得具有与精确击穿电压相结合的小正向电压的二极管。

6. 发明授权

US07068754B2 System to generate therapeutic radiation 有权
标题翻译：系统产生治疗辐射
公开(公告)号：US07068754B2
公开(公告)日：2006-06-27
申请号：US10610853
申请日：2003-06-30
申请人： Herbert Goebel , Manfred Richard Schuster
发明人： Herbert Goebel , Manfred Richard Schuster
IPC分类号： H05G2/00
CPC分类号： A61K41/00 , A61N2005/1091 , A61N2005/1095
摘要： Some embodiments include a ring anode to emit radiation, and a conical monochromator to monochromatize the emitted radiation. According to some aspects, an outer diameter of the ring anode is greater than an outer diameter of a base of the monochromator.
摘要翻译：一些实施例包括用于发射辐射的环形阳极和用于使所发射的辐射单色化的圆锥形单色仪。根据一些方面，环形阳极的外径大于单色仪的底部的外径。

7. 发明授权

US06240777B1 Sensor having a membrane 失效
标题翻译：传感器有膜
公开(公告)号：US06240777B1
公开(公告)日：2001-06-05
申请号：US09168394
申请日：1998-10-06
申请人： Christoph Treutler , Herbert Goebel , Heribert Weber , Wolfgang Mueller , Steffen Schmidt , Klaus Heyers , Hans-Friedemann Kober , Werner Steiner
发明人： Christoph Treutler , Herbert Goebel , Heribert Weber , Wolfgang Mueller , Steffen Schmidt , Klaus Heyers , Hans-Friedemann Kober , Werner Steiner
IPC分类号： G01F168
CPC分类号： G01F1/6845 , G01F1/692
摘要： A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.
摘要翻译：传感器具有膜，至少一个电阻元件位于该膜上。膜具有由多个部分层构成的膜层。此外，提供由多个部分层组成的覆盖层。膜和覆盖层的部分层被选择为使得膜和覆盖层中的两者都具有轻的拉伸应力，拉伸应力优选地大致相同。

8. 发明授权

US06716714B1 Semiconductor diode and method for producing the same 失效
标题翻译：半导体二极管及其制造方法
公开(公告)号：US06716714B1
公开(公告)日：2004-04-06
申请号：US10049474
申请日：2002-07-18
申请人： Herbert Goebel , Vesna Goebel
发明人： Herbert Goebel , Vesna Goebel
IPC分类号： H01L2120
CPC分类号： H01L29/66136 , H01L29/861
摘要： A semiconductor arrangement and a method for manufacturing the semiconductor arrangement are provided, which arrangement and method allow an improvement in the current-carrying capacity for given chip dimensions. The semiconductor arrangement includes trenches introduced in the interior of the chip, which trenches reduce power loss and improve the heat dissipation of the chip, as well as reduce the forward voltage of diode.
摘要翻译：提供了一种用于制造半导体装置的半导体装置和方法，该布置和方法允许提高给定芯片尺寸的载流能力。半导体装置包括在芯片内部引入的沟槽，其沟槽降低功率损耗并改善芯片的散热，以及降低二极管的正向电压。

9. 发明授权

US06226349B1 X-ray analysis apparatus with a graded multilayer mirror 有权
标题翻译：具有渐变多层镜的X射线分析装置
公开(公告)号：US06226349B1
公开(公告)日：2001-05-01
申请号：US09356346
申请日：1999-07-19
申请人： Manfred Schuster , Herbert Goebel , Carsten Michaelsen , Ruediger Bormann
发明人： Manfred Schuster , Herbert Goebel , Carsten Michaelsen , Ruediger Bormann
IPC分类号： G01N23207
CPC分类号： G01N23/201 , G01N23/20 , G21K1/062
摘要： An X-ray analysis apparatus having a curved paraboloid-shaped curved graded multilayer Bragg reflector (5) is characterized in that the layers of the reflector (5) are directly introduced onto a concave curved surface of a paraboloid-shaped hollow substrate and a maximum allowable shape deviation for the concave substrate surface facing the reflector is &Dgr;p={square root over (2px)} &Dgr;&thgr;R, and having a maximum allowable waviness Δ ⁢ ⁢ y Δ ⁢ ⁢ x = 1 2 ⁢ Δθ R and a maximum allowable roughness &Dgr;y=d/2&pgr;, preferentially &Dgr;y≦0.3 nm, wherein the X radiation (7) impinges on the curved surface of the reflector (5) at an angle of incidence 0°
摘要翻译：具有弯曲抛物面形弯曲多层布拉格反射体（5）的X射线分析装置的特征在于，将反射器（5）的各层直接导入抛物面形中空基板的凹曲面上，面向反射器的凹面基板表面的允许形状偏差为DELTAp = {平方根超过（2px）} DELTAthetaR，并且具有最大允许波纹度和最大允许粗糙度DELTAy = d / 2pi，优选为DELTAy <= 0.3nm，其中X 辐射（7）以入射角0°<= 5°撞击反射器（5）的弯曲表面，随着反射器层朝向抛物面开口的周期厚度d在x方向上增加，偏差DELTAd / DELTAx小于d /（2x）。以这种方式，在可靠性和寿命方面，分析装置的传输被显着地提高，同时降低了制造难度和费用。

10. 发明授权

US5393711A Process for manufacturing semiconductor components 失效
标题翻译：制造半导体元件的工艺
公开(公告)号：US5393711A
公开(公告)日：1995-02-28
申请号：US211670
申请日：1994-04-12
申请人： Vesna Biallas , Herbert Goebel , Richard Spitz
发明人： Vesna Biallas , Herbert Goebel , Richard Spitz
IPC分类号： H01L21/02 , H01L21/18 , H01L21/304 , H01L21/306 , H01L21/329 , H01L21/78 , H01L21/469
CPC分类号： H01L21/02052 , H01L21/187 , H01L21/3043 , H01L21/78 , Y10S148/135
摘要： A process for manufacturing semiconductor components, especially diodes. The process entails first bonding two semiconductor wafers of different conducting types (p and n), according to a silicon-fusion bonding process (SFB), thereby forming a bonded wafer assembly with a p-n junction. The bonded wafers are then partitioned into a plurality of semiconductor elements by the cutting of grooves into the bonded wafers to a depth which extends at least to the p-n junction. Each of the plurality of semiconductor elements thus formed has an individual p-n junction with sides exposed by the grooves. The sides of the semiconductor elements are then subjected to etching and passivation. The upper and lower surfaces of the bonded wafer assembly are then metal-coated. Finally, the semiconductor elements are separated from each other by a sawing operation.
摘要翻译： PCT No.PCT / DE92 / 00792 Sec。 371日期1994年04月12日 102（e）日期1994年4月12日PCT提交1992年9月17日PCT公布。公开号WO93 / 08592 日期：1993年04月29日。一种制造半导体元件，特别是二极管的工艺。该工艺需要根据硅熔接工艺（SFB）首先接合不同导电类型（p和n）的两个半导体晶片，由此形成具有p-n结的键合晶片组件。然后通过将沟槽切割成键合的晶片至至少延伸到p-n结的深度，将结合的晶片分隔成多个半导体元件。如此形成的多个半导体元件中的每一个具有由凹槽暴露的侧面的单独的p-n结。然后对半导体元件的侧面进行蚀刻和钝化。然后将接合的晶片组件的上表面和下表面金属涂覆。最后，半导体元件通过锯切操作彼此分离。

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