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1. 发明授权

US06240777B1 Sensor having a membrane 失效
标题翻译：传感器有膜
公开(公告)号：US06240777B1
公开(公告)日：2001-06-05
申请号：US09168394
申请日：1998-10-06
申请人： Christoph Treutler , Herbert Goebel , Heribert Weber , Wolfgang Mueller , Steffen Schmidt , Klaus Heyers , Hans-Friedemann Kober , Werner Steiner
发明人： Christoph Treutler , Herbert Goebel , Heribert Weber , Wolfgang Mueller , Steffen Schmidt , Klaus Heyers , Hans-Friedemann Kober , Werner Steiner
IPC分类号： G01F168
CPC分类号： G01F1/6845 , G01F1/692
摘要： A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.
摘要翻译：传感器具有膜，至少一个电阻元件位于该膜上。膜具有由多个部分层构成的膜层。此外，提供由多个部分层组成的覆盖层。膜和覆盖层的部分层被选择为使得膜和覆盖层中的两者都具有轻的拉伸应力，拉伸应力优选地大致相同。

2. 发明授权

US06820481B1 Mass flow sensor having an improved membrane stability 失效
标题翻译：质量流量传感器具有改进的膜稳定性
公开(公告)号：US06820481B1
公开(公告)日：2004-11-23
申请号：US09699704
申请日：2000-10-30
申请人： Heribert Weber , Werner Steiner
发明人： Heribert Weber , Werner Steiner
IPC分类号： G01F168
CPC分类号： G01F1/6845
摘要： A mass flow sensor is described. To improve the membrane stability of the known mass flow sensor, in particular the reoxide layer which is present in the known mass flow sensor is replaced by a thicker PECVD silicon oxide layer. The thickness of the silicon oxide layer deposited on the platinum layer is increased, and the known mass flow sensor is also provided with a cover layer of PECVD silicon nitride forming a moisture barrier.
摘要翻译：描述质量流量传感器。为了改善已知质量流量传感器的膜稳定性，特别是存在于已知质量流量传感器中的再氧化物层被更厚的PECVD氧化硅层代替。沉积在铂层上的氧化硅层的厚度增加，并且已知的质量流量传感器还设置有形成防潮层的PECVD氮化硅覆盖层。

3. 发明授权

US06365055B1 Process for producing a sensor membrane substrate 失效
标题翻译：传感器膜基板的制造方法
公开(公告)号：US06365055B1
公开(公告)日：2002-04-02
申请号：US09320402
申请日：1999-05-26
申请人： Heribert Weber , Steffen Schmidt
发明人： Heribert Weber , Steffen Schmidt
IPC分类号： H01L2984
CPC分类号： G01L9/0048 , G01F1/6845 , G01F1/86
摘要： A process for producing a sensor membrane substrate, in particular, for a mass flow sensor or a pressure sensor, the substrate having on its front a membrane, which is fixed at the edge of an opening that is etched free from the back. The process includes the following steps: providing a substrate; local thickening the substrate in an area on the front opposite the edge, the thickened portion having a continuous transition to the substrate; depositing a membrane layer on the front having the locally oxidized area; and etching free the opening from the back to clear the membrane in such a way that the edge is located underneath the thickened area.
摘要翻译：一种用于制造传感器膜基材的方法，特别是用于质量流量传感器或压力传感器的基片，该基底在其前面具有膜，该膜固定在从背面被免去蚀刻的开口的边缘处。该方法包括以下步骤：提供衬底; 在与边缘相对的前面的区域中局部加厚基底，加厚部分与基底有连续的过渡; 在前面沉积具有局部氧化区域的膜层; 并且从背面去除开口以使膜以使得边缘位于加厚区域下方的方式清除膜。

4. 发明授权

US08759136B2 Method for creating monocrystalline piezoresistors 有权
标题翻译：制造单晶压敏电阻的方法
公开(公告)号：US08759136B2
公开(公告)日：2014-06-24
申请号：US13431399
申请日：2012-03-27
申请人： Hubert Benzel , Heribert Weber
发明人： Hubert Benzel , Heribert Weber
IPC分类号： H01L29/84
CPC分类号： G01L9/0042 , G01L9/0045 , G01L9/0054 , G01P15/0802 , G01P15/123 , G01P2015/084
摘要： An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200° C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.
摘要翻译：提供了用于压电电阻器和半导体材料的电绝缘护套，使得压敏电阻器能够在高温范围内使用，例如用于在高于200℃的较高环境温度下测量。掺杂电阻区域最初由至少一个周向基本上垂直的沟槽，并且通过在整个区域上的蚀刻而被切削。然后在沟槽的壁和底切区域上形成电绝缘层，使得电阻区域通过电绝缘层与相邻的半导体材料电绝缘。

5. 发明授权

US08679975B2 Method for forming trenches in a semiconductor component 有权
标题翻译：在半导体部件中形成沟槽的方法
公开(公告)号：US08679975B2
公开(公告)日：2014-03-25
申请号：US13004599
申请日：2011-01-11
申请人： Jochen Reinmuth , Barbara Will , Heribert Weber
发明人： Jochen Reinmuth , Barbara Will , Heribert Weber
IPC分类号： H01L21/60
CPC分类号： H01L21/3081 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2203/033 , B81C1/00404 , B81C1/00626 , H01L21/0334 , H01L21/76229
摘要： A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice.
摘要翻译：描述了一种用于在半导体部件，特别是微机电或电半导体部件中形成至少一个凹部的方法，其具有以下步骤：将至少一个掩模施加到半导体部件，形成至少一个具有至少一个或多个在要形成的凹部上的掩模中的格子孔，形成作为蚀刻速率和/或要形成的凹部的尺寸的函数的格子孔或格子孔; 在网格下面形成凹陷。

6. 发明授权

US08659099B2 Method for manufacturing a micromechanical structure, and micromechanical structure 有权
标题翻译：微机械结构的制造方法和微机械结构
公开(公告)号：US08659099B2
公开(公告)日：2014-02-25
申请号：US13586576
申请日：2012-08-15
申请人： Jochen Reinmuth , Heribert Weber
发明人： Jochen Reinmuth , Heribert Weber
IPC分类号： H01L29/84
CPC分类号： G01P15/0802 , B81B2201/0235 , B81B2201/0242 , B81C1/00626 , B81C2201/0132 , B81C2203/0136 , G01C19/5783
摘要： A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second insulation layer on the first micromechanical functional layer, which second insulation layer fills up the first trenches; forming etch accesses in the second insulation layer, which etch accesses locally expose the first micromechanical functional layer; and etching the first micromechanical functional layer through the etch accesses, the filled first trenches and the first insulation layer acting as an etch stop.
摘要翻译：一种制造微机械结构的方法包括：在基板上形成第一绝缘层; 在所述第一绝缘层上形成第一微机械功能层; 在所述第一微机械功能层中形成多个第一沟槽，所述沟槽延伸到所述第一绝缘层; 在所述第一微机械功能层上形成第二绝缘层，所述第二绝缘层填充所述第一沟槽; 在所述第二绝缘层中形成蚀刻访问，所述蚀刻访问局部暴露所述第一微机械功能层; 并且通过蚀刻访问蚀刻第一微机械功能层，填充的第一沟槽和用作蚀刻停止层的第一绝缘层。

7. 发明授权

US08607447B2 Method for providing and connecting two contact areas of a semiconductor component or a substrate, and a substrate having two such connected contact areas 有权
标题翻译：用于提供和连接半导体部件或基板的两个接触区域的方法以及具有两个这样连接的接触区域的基板
公开(公告)号：US08607447B2
公开(公告)日：2013-12-17
申请号：US13004427
申请日：2011-01-11
申请人： Jochen Reinmuth , Heribert Weber
发明人： Jochen Reinmuth , Heribert Weber
IPC分类号： H01L23/488 , H01L21/768
CPC分类号： B81B7/0006 , B81B2207/096 , H01L21/743 , H01L21/764 , H01L21/7682 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/04042 , H01L2224/48463 , H01L2924/00014 , H01L2924/01068 , H01L2924/01078 , H01L2924/14 , H01L2924/1461 , Y10T29/49147 , Y10T29/49155 , Y10T29/49165 , Y10T29/4922 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method for providing and connecting a first contact area to at least one second contact area on a substrate, in particular in the case of a semiconductor component, which includes providing at least one insulation layer on the substrate, forming an opening in the at least one insulation layer over at least one insulation trench of a first contact area, applying at least one metal layer to the insulation layer, forming the first and second contact areas in the at least one metal layer and at least one printed conductor between the two contact areas, and forming the insulation trench.
摘要翻译：一种用于将第一接触区域提供并连接到衬底上的至少一个第二接触区域的方法，特别是在半导体部件的情况下，其包括在所述衬底上提供至少一个绝缘层，至少在所述衬底上形成开口在第一接触区域的至少一个绝缘沟槽上的一个绝缘层，将至少一个金属层施加到所述绝缘层，在所述至少一个金属层中形成所述第一和第二接触区域，以及在所述两个接触件之间形成至少一个印刷导体区域，并形成绝缘沟槽。

8. 发明申请

US20120038030A1 METHOD FOR FILLING CAVITIES IN WAFERS, CORRESPONDINGLY FILLED BLIND HOLE AND WAFER HAVING CORRESPONDINGLY FILLED INSULATION TRENCHES 有权
标题翻译：填充孔的方法，相应填充的盲孔和具有相应填充绝缘层的波形
公开(公告)号：US20120038030A1
公开(公告)日：2012-02-16
申请号：US13198651
申请日：2011-08-04
申请人： Jens Frey , Heribert Weber , Eckhard Graf , Roman Schlosser
发明人： Jens Frey , Heribert Weber , Eckhard Graf , Roman Schlosser
IPC分类号： H01L29/41 , H01L21/762 , H01L29/06
CPC分类号： H01L21/76898 , H01L21/02118 , H01L21/02318 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H01L2924/00
摘要： A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.
摘要翻译：描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

9. 发明申请

US20100307247A1 MICROMECHANICAL ACCELERATION SENSOR AND METHOD FOR MANUFACTURING AN ACCELERATION SENSOR 审中-公开
标题翻译：微机械加速传感器及制造加速传感器的方法
公开(公告)号：US20100307247A1
公开(公告)日：2010-12-09
申请号：US12793179
申请日：2010-06-03
申请人： Heribert Weber
发明人： Heribert Weber
IPC分类号： G01P15/10 , B23P17/04
CPC分类号： B81B3/0078 , B81B2201/0235 , B81C2203/0109 , G01P15/08 , G01P15/0802 , G01P15/125 , Y10T29/49826
摘要： A micromechanical acceleration sensor for a transport device, in particular a motor vehicle, having a seismic mass. The seismic mass includes an auxiliary mass, and the auxiliary mass is composed of a different material than the seismic mass. Also described is a method for manufacturing an acceleration sensor for a transport device, in particular a motor vehicle, having a seismic mass, an auxiliary mass being provided on/in the seismic mass when forming the seismic mass. Also described is an assembly, apparatus, or device, in particular for a motor vehicle. The assembly, apparatus, or device has a micromechanical acceleration sensor as described, or an acceleration sensor manufactured as described.
摘要翻译：一种用于具有地震质量的运输装置，特别是机动车辆的微机械加速度传感器。地震质量包括辅助质量，辅助质量由与地震质量不同的材料组成。还描述了一种在形成地震质量时，用于制造具有地震质量的运输装置，特别是机动车辆的加速度传感器的方法，所述运动装置具有地震质量，在质量块上/在地震质量块中提供辅助质量。还描述了一种组件，装置或装置，特别是用于机动车辆。组件，装置或装置具有如上所述的微机械加速度传感器或如上所述制造的加速度传感器。

10. 发明授权

US07833405B2 Micromechanical component and corresponding production method 有权
标题翻译：微机械部件及相应的生产方式
公开(公告)号：US07833405B2
公开(公告)日：2010-11-16
申请号：US10450362
申请日：2001-12-13
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaeffer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaeffer
IPC分类号： B23H3/00 , C23F1/00 , B31D3/00 , C03C25/68 , H01L21/00
CPC分类号： B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
摘要： A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.
摘要翻译：描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。

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