专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07012026B2 Method for producing defined polycrystalline silicon areas in an amorphous silicon layer 失效
标题翻译：在非晶硅层中制造限定多晶硅区域的方法
公开(公告)号：US07012026B2
公开(公告)日：2006-03-14
申请号：US10203596
申请日：2001-01-26
申请人： Walter Emili , Herbert Goebel , Harald Wanka
发明人： Walter Emili , Herbert Goebel , Harald Wanka
IPC分类号： H01L21/302
CPC分类号： H01L21/02686 , G01L9/0042 , H01L21/02532 , H01L21/02678 , H01L21/2026
摘要： A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, in which a substrate is provided with an insulating layer and a layer of doped amorphous silicon, electromagnetic irradiation is performed using a laser source to produce the electrically conducting regions, and a shadow mask is positioned between the laser source and the substrate having the layer for definition of the contours of the electrically conducting regions.
摘要翻译：描述了制造明确定义的多晶硅区域的方法，特别是为了制造导电区域，其中衬底设置有绝缘层和掺杂非晶硅层，使用激光源进行电磁辐射以产生导电区域和荫罩位于激光源和具有用于定义导电区域轮廓的层的基板之间。

2. 发明授权

US06667683B1 Planar trimming resistor, applications and method for its manufacture 失效
标题翻译：平面微调电阻，其制造的应用和方法
公开(公告)号：US06667683B1
公开(公告)日：2003-12-23
申请号：US09687005
申请日：2000-10-13
申请人： Walter Emili , Herbert Goebel , Harald Wanka
发明人： Walter Emili , Herbert Goebel , Harald Wanka
IPC分类号： H01C1000
CPC分类号： H01C7/22
摘要： A trimming resistor is manufactured by depositing a resistive layer on a substrate, with a passivation layer having windows, and a contact layer which is in contact with the resistive layer via the windows. Trimming is carried out by interrupting the contact layer at narrow spots or regions. This invention has application for the manufacture of high-pressure sensors.
摘要翻译：通过在基板上沉积电阻层，具有具有窗口的钝化层以及通过窗口与电阻层接触的接触层来制造微调电阻器。通过在窄点或区域中断接触层进行修整。本发明适用于制造高压传感器。

3. 发明申请

US20050275502A1 Method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, and thin-layer component 审中-公开
标题翻译：用于制造薄层部件，特别是薄层高压传感器和薄层部件的方法
公开(公告)号：US20050275502A1
公开(公告)日：2005-12-15
申请号：US11147496
申请日：2005-06-07
申请人： Herbert Goebel , Harald Wanka , Andre Kretschmann , Ralf Henn , Joachim Gluck , Horst Muenzel
发明人： Herbert Goebel , Harald Wanka , Andre Kretschmann , Ralf Henn , Joachim Gluck , Horst Muenzel
IPC分类号： G01L9/04 , G01L9/00 , H01C10/10
CPC分类号： G01L9/0054
摘要： Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges, is deposited on an electrically non-conductive surface of a diaphragm layer, a contact-layer system for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements are situated between each region of the contact-layer system and the diaphragm layer. This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.
摘要翻译：提出了制造薄层部件，特别是薄层高压传感器以及薄层部件的方法，其中用于形成测量元件的电阻层，特别是应变计沉积在隔膜层的非导电表面，用于以这样一种方式使沉积在测量元件上的测量元件电接触的接触层系统，使测量元件的区域位于接触层系统的每个区域之间和隔膜层。这用于特别提供一种高压传感器，其中接触层系统的触点的电容被设计为对称的。

4. 发明授权

US08211323B2 Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafers 有权
标题翻译：去除晶体硅太阳能晶片背面上的掺杂表面层的方法
公开(公告)号：US08211323B2
公开(公告)日：2012-07-03
申请号：US11917679
申请日：2006-06-14
申请人： Moritz Heintze , Rainer Moeller , Harald Wanka , Elena Lopez , Volkmar Hopfe , Ines Dani , Milan Rosina
发明人： Moritz Heintze , Rainer Moeller , Harald Wanka , Elena Lopez , Volkmar Hopfe , Ines Dani , Milan Rosina
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L31/1804 , H01L21/3065 , H01L27/142 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.
摘要翻译：本发明涉及一种用于单面去除晶体硅太阳能晶片后侧上的掺杂表面层的方法。根据目标集，掺杂的表面层应能够以成本有效的方式从这种太阳能晶片的后侧移除，并且在衬底上具有温和的处理。另外，前面不应该修改。根据本发明，蚀刻气体以等离子体大气压被引导到硅太阳能晶片的后侧表面上。

5. 发明申请

US20080305643A1 Method For the Removal of Doped Surface Layers on the Back Faces of Crystalline Silicon Solar Wafers 有权
标题翻译：用于去除晶体硅太阳能晶片背面上的掺杂表面层的方法
公开(公告)号：US20080305643A1
公开(公告)日：2008-12-11
申请号：US11917679
申请日：2006-06-14
申请人： Moritz Heintze , Rainer Moeller , Harald Wanka , Elena Lopez , Volkmar Hopfe , Ines Dani , Milan Rosina
发明人： Moritz Heintze , Rainer Moeller , Harald Wanka , Elena Lopez , Volkmar Hopfe , Ines Dani , Milan Rosina
IPC分类号： H01L21/3065
CPC分类号： H01L31/1804 , H01L21/3065 , H01L27/142 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.
摘要翻译：本发明涉及一种用于单面去除晶体硅太阳能晶片后侧上的掺杂表面层的方法。根据目标集，掺杂的表面层应能够以成本有效的方式从这种太阳能晶片的后侧移除，并且在衬底上具有温和的处理。另外，前面不应该修改。根据本发明，蚀刻气体以等离子体大气压被引导到硅太阳能晶片的后侧表面上。

6. 发明授权

US07850819B2 Plasma reactor with high productivity 失效
标题翻译：等离子体反应堆生产率高
公开(公告)号：US07850819B2
公开(公告)日：2010-12-14
申请号：US11108191
申请日：2005-04-18
申请人： Harald Wanka , Johann Georg Reichart , Hans-Peter Voelk
发明人： Harald Wanka , Johann Georg Reichart , Hans-Peter Voelk
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32862 , H01J37/32009 , H01J37/32568 , H01J37/32605 , Y10S156/916
摘要： The invention relates to a plasma reactor with high productivity for surface coating or modification of objects and/or substrates by plasma processes in a processing chamber, preferably as vacuum processes at reduced pressure, having an entrance lock to the processing chamber and an exit lock. The invention is to create a plasma reactor of high productivity, which, with uniformly high productivity, will make possible a rapid simple and selective cleaning of the plasma sources and adjacent parts of the processing chamber. According to the invention, two plasma sources (1, 2) are provided, each alternately couplable to a reaction chamber (7) or a re-etching chamber (8). The plasma sources (1, 2) are fixed for this purpose to an alternating means (6) in such manner that the plasma sources (1, 2) are positionable by a rotatory motion of the alternating means (6) in the reaction chamber (7) or the re-etching chamber (8).
摘要翻译：本发明涉及一种具有高生产率的等离子体反应器，用于通过处理室中的等离子体处理来表面涂覆或修饰物体和/或基底，优选地在减压下进行真空处理，具有到处理室的入口锁和出口锁。本发明是为了产生高生产率的等离子体反应器，其具有均匀的高生产率，可以使处理室的等离子体源和相邻部分快速简单和选择性地清洗。根据本发明，提供两个等离子体源（1,2），每个等离子体源（1,2）可交替地连接到反应室（7）或再蚀刻室（8）。等离子体源（1,2）为此目的被固定为交替装置（6），使得等离子体源（1,2）能够通过反应室中交替装置（6）的旋转运动来定位 7）或再蚀刻室（8）。

7. 发明申请

US20080314288A1 Mixture For Doping Semiconductors 失效
标题翻译：掺杂半导体的混合物
公开(公告)号：US20080314288A1
公开(公告)日：2008-12-25
申请号：US11916538
申请日：2006-05-31
申请人： Daniel Biro , Catherine Voyer , Harald Wanka , Jorg Koriath
发明人： Daniel Biro , Catherine Voyer , Harald Wanka , Jorg Koriath
IPC分类号： H01L21/471 , H01L29/06 , H01L21/22
CPC分类号： H01L21/2225 , C30B31/04 , H01L21/228 , H01L29/167
摘要： A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also provided are a method for producing such a doping mixture and the use thereof.
摘要翻译：用于涂覆半导体衬底的掺杂混合物，其然后进行高温处理以形成掺杂层包括至少一种p-或n-掺杂剂，水和两种或更多种表面活性剂的混合物。至少一种表面活性剂是非离子的。还提供了这种掺杂混合物的制造方法及其用途。

8. 发明授权

US07178402B2 Pressure measuring device for vacuum systems 失效
标题翻译：真空系统压力测量装置
公开(公告)号：US07178402B2
公开(公告)日：2007-02-20
申请号：US11115891
申请日：2005-04-27
申请人： Harald Wanka , Johann Georg Reichart , Hans-Peter Volkelk
发明人： Harald Wanka , Johann Georg Reichart , Hans-Peter Volkelk
IPC分类号： G01L9/12
CPC分类号： E04B1/0038 , F16B2200/406 , Y10T403/55 , Y10T403/553
摘要： A pressure-measuring device is configured for use in vacuum systems, which are used for surface coating or modification of objects and/or substrates in an inner receptacle inside a processing chamber. Elastic elements or portions are fabricated in the inner receptacle. The pressure-measuring device includes distance-measuring elements designed to measure the deformation of the elastic elements of the inner receptacle. The deformation measurements are related to the pressure in the inner receptacle. The pressure-measuring device provides a continuous and secure determination of the pressure.
摘要翻译：压力测量装置构造成用于真空系统中，所述真空系统用于在处理室内部的内部容器中进行表面涂覆或修饰物体和/或基底。在内部容器中制造弹性元件或部分。压力测量装置包括设计用于测量内部容器的弹性元件的变形的距离测量元件。变形测量与内部容器中的压力有关。压力测量装置提供连续和安全的压力测定。

9. 发明申请

US20050279455A1 Plasma reactor for surface modification of objects 审中-公开
标题翻译：用于物体表面改性的等离子体反应器
公开(公告)号：US20050279455A1
公开(公告)日：2005-12-22
申请号：US11108190
申请日：2005-04-18
申请人： Harald Wanka , Johann Reichert , Hans-Peter Voelk , Moritz Heintze
发明人： Harald Wanka , Johann Reichert , Hans-Peter Voelk , Moritz Heintze
IPC分类号： H01J37/32 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32862 , H01J37/32357 , H01J37/32623 , H01J37/32761 , H01J2237/335
摘要： A plasma reactor is configured for rapid, simple and selective cleaning of plasma sources and adjacent areas of the processing chamber. The plasma reactor includes a processing chamber having a plurality of plasma zones, each associated with its own plasma source and/or a remote or downstream plasma source. The plasma reactor is configured so that substrates can be transported past the individual plasma sources in a processing mode in which the substrates are exposed to processing gasses chemically activated by the plasmas of the individual plasma sources. The plasma sources or zones can be selectively isolated or shielded from the substrates. Accordingly, an isolated plasma source can be selectively switched to a cleaning or etch mode without interrupting the processing flow of the substrates through the plasma reactor
摘要翻译：等离子体反应器被配置用于快速，简单和选择性地清洗等离子体源和处理室的相邻区域。等离子体反应器包括具有多个等离子体区域的处理室，每个等离子体区域与其自己的等离子体源和/或远程或下游等离子体源相关联。等离子体反应器被配置为使得衬底可以以处理模式传送通过各个等离子体源，其中衬底暴露于由各个等离子体源的等离子体化学活化的处理气体。等离子体源或区域可以选择性地与基板隔离或屏蔽。因此，可以选择性地将隔离的等离子体源切换到清洁或蚀刻模式，而不会中断通过等离子体反应器的衬底的处理流程

10. 发明授权

US08043946B2 Mixture for doping semiconductors 失效
标题翻译：掺杂半导体的混合物
公开(公告)号：US08043946B2
公开(公告)日：2011-10-25
申请号：US11916538
申请日：2006-05-31
申请人： Daniel Biro , Catherine Voyer , Harald Wanka , Jörg Koriath
发明人： Daniel Biro , Catherine Voyer , Harald Wanka , Jörg Koriath
IPC分类号： H01L21/04 , H01L21/38 , H01L21/02 , H01L21/316 , C09K17/40 , C09K17/02
CPC分类号： H01L21/2225 , C30B31/04 , H01L21/228 , H01L29/167
摘要： A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.
摘要翻译：用于涂覆半导体衬底的掺杂混合物，其然后进行高温处理以形成掺杂层包括至少一种p-或n-掺杂剂，水和两种或更多种表面活性剂的混合物。至少一种表面活性剂是非离子的。此外，提供了这种掺杂混合物的制造方法及其用途。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式