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1. 发明授权

US4444812A Combination gas curtains for continuous chemical vapor deposition production of silicon bodies 失效
标题翻译：用于连续化学气相沉积生产硅体的组合气幕
公开(公告)号：US4444812A
公开(公告)日：1984-04-24
申请号：US172509
申请日：1980-07-28
申请人： Henry W. Gutsche
发明人： Henry W. Gutsche
IPC分类号： C01B33/02 , C01B33/035 , C30B25/00 , C30B25/02 , C30B25/10 , C30B25/14 , C30B25/18 , C30B29/06 , C23C11/00 , C23C13/00
CPC分类号： C30B25/18 , C01B33/035 , C30B25/025 , C30B25/10 , C30B25/14 , Y10S117/906
摘要： A process for producing electronic-grade silicon bodies is disclosed wherein continuously-pulled slim rods which can be formed in situ from the reaction of a seed crystal and a molten silicon source, are pulled into and through a chemical vapor deposition chamber, having in combination different gas curtains along the chamber inner wall, the slim rod surfaces being preheated before entry into the deposition chamber where the rods are simultaneously exposed to heating and thermally decomposable gaseous silicon compounds in order to provide suitable surface reaction conditions on the slim rods for the decomposition of the gaseous silicon compounds resulting in deposition growth upon the surfaces of the rods.
摘要翻译：公开了一种用于生产电子级硅体的方法，其中可以从晶种和熔融硅源的反应原位形成的连续拉伸的细棒被拉入并通过化学气相沉积室，其具有组合不同的气帘沿着室内壁，细杆表面在进入沉积室之前被预热，其中杆同时暴露于加热和可热分解的气态硅化合物中，以便在细长杆上提供合适的表面反应条件用于分解的气态硅化合物导致在棒表面上沉积生长。

2. 发明授权

US4228578A Method for off-orientation point rotation sawing of crystalline rod material 失效
标题翻译：结晶棒材料偏转点旋转锯切方法
公开(公告)号：US4228578A
公开(公告)日：1980-10-21
申请号：US3563
申请日：1979-01-15
申请人： Lawrence Y. Lin , Henry W. Gutsche , James A. Collier
发明人： Lawrence Y. Lin , Henry W. Gutsche , James A. Collier
IPC分类号： B23Q3/08 , B28D5/02 , B23P17/00 , B25B1/00 , H01L7/66
CPC分类号： B28D5/028 , B23Q3/08 , Y10T29/4981 , Y10T29/49812 , Y10T29/49982 , Y10T83/0405
摘要： A method is provided for point rotation sawing of crystalline rod material at off-orientation angles wherein the crystalline rod is encapsulated in a molding media forming a cylindrical geometric encapsulation containing the rod with its crystallographic axis at an angle to the cylindrical axis of encapsulation, the angle coinciding with the off-orientation requirement. The encapsulation cylinder is rotated about its axis and contacted by sawing means at one or more points tangent to the cylinder surface and perpendicular to the cylinder's axis of rotation resulting in the sawing of a thin wafer from a cylinder which is inclusive of an off-orientation crystalline material wafer. Inside and outside diameter saws having sidewall lapping coatings provide an off-orientation point sawing method with simultaneous sawing and lapping of the resulting thin wafers as the point contact diameter becomes smaller; however, the off-orientation point sawing method utilizing the rotating cylinder is adaptable to a variety of sawing means.
摘要翻译：提供了一种用于以偏离取向角度对结晶棒材料进行点旋转锯切的方法，其中结晶棒被包封在模制介质中，模制介质形成圆柱形几何封装，该圆柱形几何封装包含具有与圆柱形轴向轴线成一定角度的晶棒，角度与偏离方向要求一致。封装圆筒围绕其轴线旋转并与锯切装置在与圆筒表面相切的一个或多个点处垂直于圆柱体的旋转轴线接触，导致从圆柱体切割薄晶片，其包括偏离方向晶体材料晶圆。具有侧壁研磨涂层的内外径锯提供了一种离轴定位锯切方法，随着点接触直径变小，同时对所得薄晶片进行锯切和研磨; 然而，利用旋转圆筒的偏离点切割方法适用于各种锯切装置。

3. 发明授权

US4150912A Twin blade mounting and tensioning apparatus 失效
标题翻译：双叶片安装和张紧装置
公开(公告)号：US4150912A
公开(公告)日：1979-04-24
申请号：US871276
申请日：1978-01-23
申请人： Henry W. Gutsche , Thomas L. Bever , John T. Hepperman
发明人： Henry W. Gutsche , Thomas L. Bever , John T. Hepperman
IPC分类号： B23D61/10 , B24D5/12 , B28D5/02 , B26D1/12 , B24B7/00 , B28D1/04
CPC分类号： B28D5/029 , B23D61/10 , B24D5/126 , Y10T407/1902
摘要： A twin blade mounting and tensioning apparatus is disclosed wherein twin inside diameter cutting blades for sawing crystalline rod materials are mounted with annular clamping-tensioning members which clamp the twin blades between the members with the clamped twin blades having an outer annular shim and an inner annular shim located therebetween in a spaced apart relationship defining an annular fluid expansion chamber, the annular clamping-tensioning members having recessed annular chambers in circumferential alignment with and located axially outward from said expansion chamber, the expansion chamber separated from the recessed chambers by the twin blade walls which are flexible and deformable within said recessed chambers through the action of pressurized fluid means.
摘要翻译：公开了一种双叶片安装和张紧装置，其中用于锯结晶棒材料的双内径切割刀片安装有环形夹紧张紧构件，其将两个叶片夹在构件之间，夹紧的双叶片具有外环形垫片和内环形位于其间的垫片以限定环形流体膨胀室的间隔开的关系定位，环形夹紧张紧构件具有与所述膨胀室周向对准并位于轴向外侧的凹入的环形室，所述膨胀室由所述凹槽与所述双叶片壁通过加压流体装置的作用在所述凹进的腔室内是柔性的和可变形的。

4. 发明授权

US4464222A Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases 失效
标题翻译：从卤化硅 - 氢气反应气体中提高硅热分解沉积速率的方法
公开(公告)号：US4464222A
公开(公告)日：1984-08-07
申请号：US172623
申请日：1980-07-28
申请人： Henry W. Gutsche
发明人： Henry W. Gutsche
IPC分类号： C01B33/02 , C01B33/035 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B29/06 , C30B25/10
CPC分类号： C23C16/45561 , C01B33/035 , C30B25/025 , C30B25/14 , C30B25/18 , C30B29/06
摘要： Process for increasing silicon deposition rates from silicon halide-hydrogen reaction gases wherein electronic-grade silicon bodies are produced from the deposition of silicon upon silicon slim rods heated and introduced into and pulled through a chemical vapor deposition chamber, the increased silicon deposition rates resulting from introducing small percentages by weight of silane to the silicon halide-hydrogen reaction gases, for example, silicon tetrachloride and/or trichlorosilane.
摘要翻译：从硅卤化氢 - 氢气反应气体中提高硅沉积速率的方法，其中电子级硅体是由加热并引入化学气相沉积室的硅微细棒上的硅沉积产生的，由此产生的增加的硅沉积速率将小百分比的硅烷引入卤化硅 - 氢反应气体，例如四氯化硅和/或三氯硅烷。

5. 发明授权

US4309241A Gas curtain continuous chemical vapor deposition production of semiconductor bodies 失效
标题翻译：气帘连续化学气相沉积生产半导体体
公开(公告)号：US4309241A
公开(公告)日：1982-01-05
申请号：US172503
申请日：1980-07-28
申请人： Paul M. Garavaglia , Henry W. Gutsche
发明人： Paul M. Garavaglia , Henry W. Gutsche
IPC分类号： C01B33/02 , C01B33/035 , C30B25/00 , C30B25/02 , C30B25/10 , C30B25/14 , C30B25/18 , C30B29/06 , H01L21/205 , C30B25/08
CPC分类号： C01B33/035 , C30B25/025 , C30B25/10 , C30B25/14 , C30B25/18 , Y10T117/10 , Y10T117/1032
摘要： Apparatus and process for producing electronic-grade semiconductor bodies are disclosed wherein continuously-pulled slim rod which can be formed in situ from the reaction of a seed crystal and a molten semiconductor material source, is pulled into and through a chemical vapor deposition chamber, having a gas curtain along the inner wall, the slim rod surface being preheated before entry into the deposition chamber where it is simultaneously exposed to focused heating and thermally decomposable gaseous compounds in order to provide suitable surface reaction conditions on the slim rod for the decomposition of the gaseous compounds which results in deposition growth upon the surface of the rod. Single crystal semiconductor bodies are produced according to the process by avoiding poly-growth conditions through the in situ continuously pulled virgin slim rod, preheating of the slim rod for entry into the chemical vapor deposition chamber wherein the rod is simultaneously heated or maintained at reaction temperature conditions while being exposed or contacted with elected thermally decomposable gaseous compounds and continuously drawn through the chemical vapor deposition chamber reaction zone resulting in an enlarged single crystal semiconductor body which is withdrawn continuously from the chemical vapor deposition chamber.
摘要翻译：公开了用于生产电子级半导体器件的装置和方法，其中可以从晶种和熔融半导体材料源的反应形成的连续拉伸的细棒被拉入并通过化学气相沉积室，其具有沿着内壁的气帘，细长的杆表面在进入沉积室之前被预热，同时暴露于聚焦加热和可热分解的气态化合物，以便在细长杆上提供合适的表面反应条件以分解导致在棒表面沉积生长的气态化合物。根据该方法，通过避免多生长条件通过原位连续拉伸的原始细长棒来制造单晶半导体体，预热细条以进入化学气相沉积室，其中杆同时加热或保持在反应温度同时暴露或接触所选择的可热分解气态化合物，并连续通过化学气相沉积室反应区，从而形成从化学气相沉积室连续取出的扩大的单晶半导体体。

6. 发明授权

US4011099A Preparation of damage-free surface on alpha-alumina 失效
标题翻译：在ALPHA-ALUMINA上制备无损伤表面
公开(公告)号：US4011099A
公开(公告)日：1977-03-08
申请号：US629949
申请日：1975-11-07
申请人： Henry W. Gutsche
发明人： Henry W. Gutsche
IPC分类号： C01F7/02 , C09G1/02 , C09K13/04 , B08B7/00 , C23G1/36
CPC分类号： C09K13/04 , C09G1/02
摘要： A chemical polishing process for alpha-alumina utilizing a silica colloid polishing fluid which is both a reactant and a medium for the removal of the reaction product is disclosed.

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