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1. 发明授权

US4721682A Isolation and substrate connection for a bipolar integrated circuit 失效
标题翻译：双极集成电路的隔离和衬底连接
公开(公告)号：US4721682A
公开(公告)日：1988-01-26
申请号：US780062
申请日：1985-09-25
申请人： Scott O. Graham , Lawrence Y. Lin , Hua T. Chua
发明人： Scott O. Graham , Lawrence Y. Lin , Hua T. Chua
IPC分类号： H01L21/76 , H01L21/74 , H01L21/762 , H01L21/822 , H01L27/04 , H01L29/06 , H01L21/22 , H01L21/20 , H01L21/26
CPC分类号： H01L21/762 , H01L21/743 , H01L29/0638
摘要： A structure for isolating a bipolar transistor (100) from an adjacent transistor includes a first silicon dioxide isolation region (110) laterally surrounding the transistor and a conductive channel stop region (112) laterally surrounding the silicon dioxide isolation region. The channel stop region allows electrical potential of the substrate (102) to be controlled and the silicon dioxide isolation region prevents the channel stop from contacting the transistor.
摘要翻译：用于将双极晶体管（100）与相邻晶体管隔离的结构包括横向围绕晶体管的第一二氧化硅隔离区（110）和横向围绕二氧化硅隔离区的导电沟道停止区（112）。通道停止区域允许控制衬底（102）的电势，并且二氧化硅隔离区域防止通道停止接触晶体管。

2. 发明授权

US5449638A Process on thickness control for silicon-on-insulator technology 失效
标题翻译：绝缘体上硅技术的厚度控制工艺
公开(公告)号：US5449638A
公开(公告)日：1995-09-12
申请号：US254532
申请日：1994-06-06
申请人： Gary Hong , Chen-Chiu Hsue , H. J. Wu , Lawrence Y. Lin
发明人： Gary Hong , Chen-Chiu Hsue , H. J. Wu , Lawrence Y. Lin
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76251 , Y10S148/012 , Y10S148/135
摘要： A method for forming a thin, uniform top silicon layer using bonded-wafer SOI technology is described. A dielectric layer is formed on a first surface of a first silicon substrate. A trench is formed in a first surface of a second silicon substrate. A polishing stopper is formed in the trench. A second dielectric layer with a smooth top surface is formed over the polishing stopper and over the first surface of the second silicon substrate. The smooth top surface of the second dielectric layer of the second silicon substrate is bonded to the dielectric layer of the first silicon substrate. Material is removed from the exposed surface of the second silicon substrate to form the silicon layer with well-controlled thickness, having a top surface co-planar with the polishing stopper.
摘要翻译：描述了使用接合晶片SOI技术形成薄的均匀顶部硅层的方法。介电层形成在第一硅衬底的第一表面上。在第二硅衬底的第一表面中形成沟槽。在沟槽中形成抛光止动件。在抛光止动器上方并在第二硅衬底的第一表面上形成具有平滑顶表面的第二电介质层。第二硅衬底的第二电介质层的平滑顶表面结合到第一硅衬底的电介质层。从第二硅衬底的暴露表面去除材料以形成具有良好控制厚度的硅层，其具有与抛光止挡件共面的顶表面。

3. 发明授权

US4228578A Method for off-orientation point rotation sawing of crystalline rod material 失效
标题翻译：结晶棒材料偏转点旋转锯切方法
公开(公告)号：US4228578A
公开(公告)日：1980-10-21
申请号：US3563
申请日：1979-01-15
申请人： Lawrence Y. Lin , Henry W. Gutsche , James A. Collier
发明人： Lawrence Y. Lin , Henry W. Gutsche , James A. Collier
IPC分类号： B23Q3/08 , B28D5/02 , B23P17/00 , B25B1/00 , H01L7/66
CPC分类号： B28D5/028 , B23Q3/08 , Y10T29/4981 , Y10T29/49812 , Y10T29/49982 , Y10T83/0405
摘要： A method is provided for point rotation sawing of crystalline rod material at off-orientation angles wherein the crystalline rod is encapsulated in a molding media forming a cylindrical geometric encapsulation containing the rod with its crystallographic axis at an angle to the cylindrical axis of encapsulation, the angle coinciding with the off-orientation requirement. The encapsulation cylinder is rotated about its axis and contacted by sawing means at one or more points tangent to the cylinder surface and perpendicular to the cylinder's axis of rotation resulting in the sawing of a thin wafer from a cylinder which is inclusive of an off-orientation crystalline material wafer. Inside and outside diameter saws having sidewall lapping coatings provide an off-orientation point sawing method with simultaneous sawing and lapping of the resulting thin wafers as the point contact diameter becomes smaller; however, the off-orientation point sawing method utilizing the rotating cylinder is adaptable to a variety of sawing means.
摘要翻译：提供了一种用于以偏离取向角度对结晶棒材料进行点旋转锯切的方法，其中结晶棒被包封在模制介质中，模制介质形成圆柱形几何封装，该圆柱形几何封装包含具有与圆柱形轴向轴线成一定角度的晶棒，角度与偏离方向要求一致。封装圆筒围绕其轴线旋转并与锯切装置在与圆筒表面相切的一个或多个点处垂直于圆柱体的旋转轴线接触，导致从圆柱体切割薄晶片，其包括偏离方向晶体材料晶圆。具有侧壁研磨涂层的内外径锯提供了一种离轴定位锯切方法，随着点接触直径变小，同时对所得薄晶片进行锯切和研磨; 然而，利用旋转圆筒的偏离点切割方法适用于各种锯切装置。

4. 发明授权

US5565376A Device isolation technology by liquid phase deposition 失效
标题翻译：器件隔离技术通过液相沉积
公开(公告)号：US5565376A
公开(公告)日：1996-10-15
申请号：US275014
申请日：1994-07-12
申请人： Water Lur , Lawrence Y. Lin
发明人： Water Lur , Lawrence Y. Lin
IPC分类号： H01L21/316 , H01L21/762 , H01L21/76
CPC分类号： H01L21/76229 , H01L21/316
摘要： A new method of forming device isolation regions on a silicon substrate is provided. This method comprises the following steps: a pad oxide layer is formed on the silicon substrate; a silicon nitride layer is formed on the pad oxide layer; portions of the silicon nitride and pad oxide layers not covered by a mask pattern are etched through and into the silicon substrate so as to provide a plurality of wide and narrow trenches within the silicon substrate that will form the device isolation regions; silicon nitride spacers are formed on the sidewalls of the trenches; a thin oxide layer is grown on all exposed surfaces of the substrate by using thermal oxidation; a first liquid phase deposition oxide layer is formed on the thin oxide layer and is densified by a thermal process to form cracks therein; the silicon nitride layer and silicon nitride spacers are removed through the cracks, wherein the first liquid phase deposition oxide layer over the silicon nitride layer and silicon nitride spacers are also lift-off; the pad oxide layer is then removed; and a second liquid phase deposition oxide layer is formed on the first liquid phase deposition oxide layer so as to fill the trenches.
摘要翻译：提供了一种在硅衬底上形成器件隔离区的新方法。该方法包括以下步骤：在硅衬底上形成衬垫氧化层; 在衬垫氧化物层上形成氮化硅层; 未被掩模图案覆盖的氮化硅和衬垫氧化物层的部分被蚀刻穿过硅衬底并在硅衬底内提供将形成器件隔离区的硅衬底内的多个宽而窄的沟槽; 氮化硅间隔物形成在沟槽的侧壁上; 通过使用热氧化在衬底的所有暴露表面上生长薄氧化物层; 在薄氧化物层上形成第一液相沉积氧化物层，并且通过热处理致密化以在其中形成裂纹; 通过裂纹去除氮化硅层和氮化硅间隔物，其中氮化硅层和氮化硅间隔物上的第一液相沉积氧化物层也被剥离; 然后去除衬垫氧化物层; 并且在第一液相沉积氧化物层上形成第二液相沉积氧化物层以填充沟槽。

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