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    • 1. 发明授权
    • Radiation mask adapted to be aligned with a photoresist layer and method
of making the same
    • 适于与光致抗蚀剂层对准的辐射掩模及其制造方法
    • US5908719A
    • 1999-06-01
    • US151922
    • 1998-09-11
    • Henry GuckelHarald EmmerichJonathan L. Klein
    • Henry GuckelHarald EmmerichJonathan L. Klein
    • G03F1/22G03F7/00G03F7/09G03F7/20G03F9/00G03F5/00
    • G03F1/22G03F7/0035G03F7/094G03F7/2039G03F9/00G03F9/70G03F7/00
    • The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers. The alignment procedure is particularly applicable to the fabrication of multi-layer metal microstructures using deep X-ray lithography and electroplating. The alignment procedure may be extended to multiple photoresist layers and larger device heights using spacer photoresist sheets between subsequent masks and the first photoresist layer that are joined together using alignment posts.
    • 本发明提供了用于实现X射线掩模和用于制造多层微结构的器件衬底之间的精确对准的步骤。 通过第一X射线掩模对衬底上的第一光致抗蚀剂层进行构图,以包括第一对准孔以及第一层微结构图案。 掩模光致抗蚀剂层附着到第二和随后的掩模,其用于图案附着到微结构器件衬底的附加光致抗蚀剂层。 掩模光致抗蚀剂层被图案化以包括掩模对准孔,其几何形状对应于器件基板上的第一光致抗蚀剂层中的第一对准孔。 第二掩模和第一光致抗蚀剂层之间的对准是通过使用位于第一光致抗蚀剂层中的第一对准孔中的对准柱将第二掩模组装到第一光致抗蚀剂层上而实现的,该第一光刻胶层渗透到掩模光致抗蚀剂层中的掩模对准孔中。 对准程序特别适用于使用深X射线光刻和电镀制造多层金属微结构。 使用在后续掩模之间的间隔光致抗蚀剂片和使用对准柱连接在一起的第一光致抗蚀剂层,可以将对准过程扩展到多个光致抗蚀剂层和更大的器件高度。
    • 2. 发明授权
    • Alignment method for multi-level deep x-ray lithography utilizing
alignment holes and posts
    • 使用对准孔和柱的多层深X射线光刻的对准方法
    • US5866281A
    • 1999-02-02
    • US753645
    • 1996-11-27
    • Henry GuckelHarald EmmerichJonathan L. Klein
    • Henry GuckelHarald EmmerichJonathan L. Klein
    • G03F1/22G03F7/00G03F7/09G03F7/20G03F9/00
    • G03F1/22G03F7/0035G03F7/094G03F7/2039G03F9/00G03F9/70G03F7/00
    • The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers. The alignment procedure is particularly applicable to the fabrication of multi-layer metal microstructures using deep X-ray lithography and electroplating. The alignment procedure may be extended to multiple photoresist layers and larger device heights using spacer photoresist sheets between subsequent masks and the first photoresist layer that are joined together using alignment posts.
    • 本发明提供了用于实现X射线掩模和用于制造多层微结构的器件衬底之间的精确对准的步骤。 通过第一X射线掩模对衬底上的第一光致抗蚀剂层进行构图,以包括第一对准孔以及第一层微结构图案。 掩模光致抗蚀剂层附着到第二和随后的掩模,其用于图案附着到微结构器件衬底的附加光致抗蚀剂层。 掩模光致抗蚀剂层被图案化以包括掩模对准孔,其几何形状对应于器件基板上的第一光致抗蚀剂层中的第一对准孔。 第二掩模和第一光致抗蚀剂层之间的对准是通过使用位于第一光致抗蚀剂层中的第一对准孔中的对准柱将第二掩模组装到第一光致抗蚀剂层上而实现的,该第一光刻胶层渗透到掩模光致抗蚀剂层中的掩模对准孔中。 对准程序特别适用于使用深X射线光刻和电镀制造多层金属微结构。 使用在后续掩模之间的间隔光致抗蚀剂片和使用对准柱连接在一起的第一光致抗蚀剂层,可以将对准过程扩展到多个光致抗蚀剂层和更大的器件高度。
    • 6. 发明授权
    • Acceleration sensor method for operating an acceleration sensor
    • 用于操作加速度传感器的加速度传感器方法
    • US08752431B2
    • 2014-06-17
    • US13148038
    • 2009-12-11
    • Jochen ReinmuthHarald Emmerich
    • Jochen ReinmuthHarald Emmerich
    • G01P15/125
    • G01P15/125G01P2015/0831
    • An acceleration sensor includes a housing, a first seismic mass which is formed as a first asymmetrical rocker and is disposed in the housing via at least one first spring, a second seismic mass which is formed as a second asymmetrical rocker and is disposed in the housing via at least one second spring, and a sensor and evaluation unit which is designed to ascertain information regarding corresponding rotational movements of the first seismic mass and the second seismic mass in relation to the housing and to determine acceleration information with respect to an acceleration of the acceleration sensor, taking the ascertained information into account. In addition, a method for operating an acceleration sensor is disclosed. The rockers execute opposite rotational movements in response to the presence of an acceleration. A differential evaluation of the signals makes it possible to free the measuring signal of any existing interference signals.
    • 加速度传感器包括壳体,第一抗震块,其形成为第一不对称摇臂,并且经由至少一个第一弹簧设置在壳体中,第二抗震块形成为第二不对称摇臂并设置在壳体中 经由至少一个第二弹簧以及传感器和评估单元,该传感器和评估单元被设计成确定关于第一地震质量块和第二地震质量块相对于壳体的相应旋转运动的信息,并且确定相对于壳体的加速度的加速度信息 加速度传感器,考虑确定的信息。 此外,公开了一种用于操作加速度传感器的方法。 响应于加速度的存在,摇臂执行相反的旋转运动。 信号的差分评估使得可以释放任何现有干扰信号的测量信号。