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1. 发明申请

US20110039034A1 PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL 审中-公开
标题翻译：脉冲沉积和再结晶和使用晶体/非晶材料的太阳能电池设计
公开(公告)号：US20110039034A1
公开(公告)日：2011-02-17
申请号：US12538913
申请日：2009-08-11
申请人： Helen Maynard , George D. Papasouliotis , Vikram Singh , Christopher Hatem , Ludovic Godet
发明人： Helen Maynard , George D. Papasouliotis , Vikram Singh , Christopher Hatem , Ludovic Godet
IPC分类号： C23C14/14 , C23C14/00
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/0259 , H01L21/02667 , H01L21/2236 , H01L31/0725 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.
摘要翻译：公开了一种在衬底上沉积和结晶材料的方法。在特定实施例中，该方法可以包括产生具有沉积相关物质和能量携带物质的等离子体。在第一时间段期间，没有偏置电压施加到衬底，并且通过等离子体沉积物质沉积在衬底上。在第二时间段期间，向衬底施加电压，其将离子吸引到沉积的物质中，从而使沉积层结晶。可以重复该过程，直到达到足够的厚度。在另一个实施例中，可以改变偏置电压或偏置脉冲持续时间以改变发生的结晶量。在另一个实施方案中，可以使用掺杂剂来掺杂沉积的层。

2. 发明申请

US20140037858A1 ANISOTROPIC SURFACE ENERGY MODULATION BY ION IMPLANTATION 审中-公开
标题翻译：通过离子植入进行的各向异性表面能量调节
公开(公告)号：US20140037858A1
公开(公告)日：2014-02-06
申请号：US13563046
申请日：2012-07-31
申请人： Tristan Ma , Ludovic Godet , Christopher Hatem
发明人： Tristan Ma , Ludovic Godet , Christopher Hatem
IPC分类号： C23C14/48
CPC分类号： H01J37/32403 , C23C14/04 , C23C14/046 , C23C14/48 , H01J37/32357 , H01J37/32422 , H01J2237/3171
摘要： Methods of modulating a material's surface energies through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier, are disclosed. Two or more ion implants may be performed, where the implant regions of two of the ion implants overlap. The species implanted by a first implant may increase the hydrophobicity of the surface, wherein the species implanted by the second implant may decrease the hydrophobicity of the surface. In this way, a workpiece can be implanted such that different portions of its surface have different surface energies.
摘要翻译：公开了通过离子注入来调制材料的表面能的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。可以执行两个或更多个离子植入物，其中两个离子植入物的植入区域重叠。通过第一植入植入的物种可以增加表面的疏水性，其中由第二植入物植入的物种可以降低表面的疏水性。以这种方式，可以植入工件，使得其表面的不同部分具有不同的表面能。

3. 发明申请

US20130045557A1 DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS 有权
标题翻译：多孔膜沉积用于热电应用
公开(公告)号：US20130045557A1
公开(公告)日：2013-02-21
申请号：US13587325
申请日：2012-08-16
申请人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
发明人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
IPC分类号： H01L21/22
CPC分类号： H01L35/34 , H01L35/22
摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
摘要翻译：公开了一种制造具有高导电性和低热导率的热电材料的改进方法。在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。

4. 发明授权

US08372735B2 USJ techniques with helium-treated substrates 有权
标题翻译： USJ技术与氦处理的基板
公开(公告)号：US08372735B2
公开(公告)日：2013-02-12
申请号：US12339295
申请日：2008-12-19
申请人： Christopher Hatem , Ludovic Godet , Alexander Kontos
发明人： Christopher Hatem , Ludovic Godet , Alexander Kontos
IPC分类号： H01L21/26
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/26513 , H01L21/2658 , H01L29/6659 , H01L29/7833
摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
摘要翻译：公开了一种使用氦来形成超浅结的方法。使用氦的植入前非晶化具有显着的优点。例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。因此，通过适当地确定氦的注入能量，可以准确地确定结深度。增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。

5. 发明申请

US20100041218A1 USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES 有权
标题翻译： USJ技术与经过处理的基板
公开(公告)号：US20100041218A1
公开(公告)日：2010-02-18
申请号：US12339295
申请日：2008-12-19
申请人： Christopher Hatem , Ludovic Godet , Alexander Kontos
发明人： Christopher Hatem , Ludovic Godet , Alexander Kontos
IPC分类号： H01L21/266
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/26513 , H01L21/2658 , H01L29/6659 , H01L29/7833
摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
摘要翻译：公开了一种使用氦来形成超浅结的方法。使用氦的植入前非晶化具有显着的优点。例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。因此，通过适当地确定氦的注入能量，可以准确地确定结深度。增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。

6. 发明授权

US09425027B2 Methods of affecting material properties and applications therefor 有权
标题翻译：影响材料性能及其应用的方法
公开(公告)号：US09425027B2
公开(公告)日：2016-08-23
申请号：US13470731
申请日：2012-05-14
申请人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
发明人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
IPC分类号： C23C14/48 , C23C14/34 , H01J37/32 , B41J2/16
CPC分类号： C23C14/48 , B41J2/1606 , H01J37/32412 , H01J37/32422 , H01J37/32623
摘要： Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.
摘要翻译：通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。这些方法可以应用于各种技术。在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。

7. 发明授权

US08697549B2 Deposition of porous films for thermoelectric applications 有权
标题翻译：沉积用于热电应用的多孔膜
公开(公告)号：US08697549B2
公开(公告)日：2014-04-15
申请号：US13587325
申请日：2012-08-16
申请人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
发明人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
IPC分类号： H01L21/20
CPC分类号： H01L35/34 , H01L35/22
摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
摘要翻译：公开了一种制造具有高导电性和低热导率的热电材料的改进方法。在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。

8. 发明申请

US20120288637A1 METHODS OF AFFECTING MATERIAL PROPERTIES AND APPLICATIONS THEREFOR 有权
标题翻译：影响材料性能的方法及其应用
公开(公告)号：US20120288637A1
公开(公告)日：2012-11-15
申请号：US13470731
申请日：2012-05-14
申请人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
发明人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
IPC分类号： C23C14/48
CPC分类号： C23C14/48 , B41J2/1606 , H01J37/32412 , H01J37/32422 , H01J37/32623
摘要： Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.
摘要翻译：通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。这些方法可以应用于各种技术。在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。

9. 发明申请

US20090227061A1 ESTABLISHING A HIGH PHOSPHORUS CONCENTRATION IN SOLAR CELLS 审中-公开
标题翻译：建立太阳能电池中的高磷浓度
公开(公告)号：US20090227061A1
公开(公告)日：2009-09-10
申请号：US12397596
申请日：2009-03-04
申请人： Nicholas Bateman , Atul Gupta , Christopher Hatem , George Papasouliotis , Helen Maynard
发明人： Nicholas Bateman , Atul Gupta , Christopher Hatem , George Papasouliotis , Helen Maynard
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , Y02E10/547 , Y02P70/521
摘要： Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.
摘要翻译：公开了控制太阳能电池中掺杂剂扩散的方法。第二种与掺杂剂结合使用以改变扩散区。例如，磷和硼通过与间隙硅原子配对而扩散。因此，通过控制这些间隙的产生和位置，可以控制掺杂剂的扩散速率。在一个实施例中，使用较重的元素，例如锗，氩或硅，以产生间隙。由于这些较重的元素的存在，掺杂剂扩散到衬底中。在另一个实施方案中，植入碳。碳减少了间隙的数量，因此可用于限制掺杂剂的扩散。在另一个实施方案中，使用诸如氦的较轻元素使基底无定形。产生的晶体 - 非晶界面限制了掺杂剂到衬底中的扩散。

10. 发明授权

US08461032B2 Use of dopants with different diffusivities for solar cell manufacture 有权
标题翻译：使用具有不同扩散性的掺杂剂用于太阳能电池制造
公开(公告)号：US08461032B2
公开(公告)日：2013-06-11
申请号：US12397542
申请日：2009-03-04
申请人： Nicholas Bateman , Atul Gupta , Christopher Hatem , Deepak Ramappa
发明人： Nicholas Bateman , Atul Gupta , Christopher Hatem , Deepak Ramappa
IPC分类号： H01L21/425
CPC分类号： H01L33/025 , H01L21/26513 , H01L31/022441 , H01L31/0236 , H01L31/03529 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
摘要翻译：公开了通过利用两种不同的掺杂剂来调整衬底的掺杂剂分布的方法，每种掺杂剂具有不同的扩散率。衬底可以是例如太阳能电池。通过引入两种不同的掺杂剂，例如通过离子注入，炉扩散或糊状物，可以产生所需的掺杂剂分布。此外，掺杂剂可以同时，部分同时或顺序地引入。掺杂剂对优选由一种较轻的物质和一种较重的物质组成，其中较轻的物质具有较大的扩散系数。例如，可以使用诸如硼和镓，硼和铟，磷和砷的掺杂物对，以及磷和锑。

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