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1. 发明申请

US20110039034A1 PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL 审中-公开
标题翻译：脉冲沉积和再结晶和使用晶体/非晶材料的太阳能电池设计
公开(公告)号：US20110039034A1
公开(公告)日：2011-02-17
申请号：US12538913
申请日：2009-08-11
申请人： Helen Maynard , George D. Papasouliotis , Vikram Singh , Christopher Hatem , Ludovic Godet
发明人： Helen Maynard , George D. Papasouliotis , Vikram Singh , Christopher Hatem , Ludovic Godet
IPC分类号： C23C14/14 , C23C14/00
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/0259 , H01L21/02667 , H01L21/2236 , H01L31/0725 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.
摘要翻译：公开了一种在衬底上沉积和结晶材料的方法。在特定实施例中，该方法可以包括产生具有沉积相关物质和能量携带物质的等离子体。在第一时间段期间，没有偏置电压施加到衬底，并且通过等离子体沉积物质沉积在衬底上。在第二时间段期间，向衬底施加电压，其将离子吸引到沉积的物质中，从而使沉积层结晶。可以重复该过程，直到达到足够的厚度。在另一个实施例中，可以改变偏置电压或偏置脉冲持续时间以改变发生的结晶量。在另一个实施方案中，可以使用掺杂剂来掺杂沉积的层。

2. 发明申请

US20090278059A1 APPARATUS FOR DETECTING FILM DELAMINATION AND A METHOD THEREOF 有权
标题翻译：用于检测膜分层的装置及其方法
公开(公告)号：US20090278059A1
公开(公告)日：2009-11-12
申请号：US12428527
申请日：2009-04-23
申请人： Helen Maynard , George D. Papasouliotis
发明人： Helen Maynard , George D. Papasouliotis
IPC分类号： H01J37/08
CPC分类号： G01B11/0683
摘要： A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.
摘要翻译：本文描述了一种方法和装置，其允许待监测的膜的分层进展。干涉仪用于检测薄膜分层的发生和进展。通过在表面投射一个或多个波长并测量这些投影波长的反射率，可以监测分层过程的进展。测试表明，分层过程的不同阶段产生不同的反射率图。该信息可用于建立植入参数，或可用作原位监测。相同的技术可以用于其他应用。例如，在诸如PECVD的某些植入系统中，材料膜可以在室的壁上显影。本文描述的技术可以用于监测该分离，并且确定何时可以在腔室上进行预防性维护。

3. 发明申请

US20120009798A1 STENCIL MASK PROFILE 有权
公开(公告)号：US20120009798A1
公开(公告)日：2012-01-12
申请号：US12832160
申请日：2010-07-08
申请人： Helen Maynard , George D. Papasouliotis
发明人： Helen Maynard , George D. Papasouliotis
IPC分类号： H01L21/46 , B05D3/10
CPC分类号： H01L21/02274 , B05D1/32 , B05D1/62 , C23C16/042
摘要： An apparatus and method are provided which allow the low cost patterned deposition of material onto a workpiece. A stencil mask, having chamfered edges is applied to the surface of the workpiece. The material is then deposited onto the workpiece, such as by PECVD. Because of the chamfered edges, the material thickness is much more uniform than is possible with traditional stencil masks. Stencil masks having a variety of cross sectional patterns are disclosed which improve deposition uniformity.
摘要翻译：提供了一种装置和方法，其允许材料在工件上的低成本图案化沉积。将具有倒角边缘的模板掩模施加到工件的表面。然后将材料沉积到工件上，例如通过PECVD沉积。由于倒角边缘，材料厚度比传统模板掩模可能更均匀。公开了具有各种横截面图案的模板掩模，其提高了沉积均匀性。

4. 发明授权

US08698106B2 Apparatus for detecting film delamination and a method thereof 有权
标题翻译：用于检测膜分层的装置及其方法
公开(公告)号：US08698106B2
公开(公告)日：2014-04-15
申请号：US12428527
申请日：2009-04-23
申请人： Helen Maynard , George D. Papasouliotis
发明人： Helen Maynard , George D. Papasouliotis
IPC分类号： G21K5/00
CPC分类号： G01B11/0683
摘要： A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.
摘要翻译：本文描述了一种方法和装置，其允许待监测的膜的分层进展。干涉仪用于检测薄膜分层的发生和进展。通过在表面投射一个或多个波长并测量这些投影波长的反射率，可以监测分层过程的进展。测试表明，分层过程的不同阶段产生不同的反射率图。该信息可用于建立植入参数，或可用作原位监测。相同的技术可以用于其他应用。例如，在诸如PECVD的某些植入系统中，材料膜可以在室的壁上显影。本文描述的技术可以用于监测该分离，并且确定何时可以在腔室上进行预防性维护。

5. 发明申请

US20090227061A1 ESTABLISHING A HIGH PHOSPHORUS CONCENTRATION IN SOLAR CELLS 审中-公开
标题翻译：建立太阳能电池中的高磷浓度
公开(公告)号：US20090227061A1
公开(公告)日：2009-09-10
申请号：US12397596
申请日：2009-03-04
申请人： Nicholas Bateman , Atul Gupta , Christopher Hatem , George Papasouliotis , Helen Maynard
发明人： Nicholas Bateman , Atul Gupta , Christopher Hatem , George Papasouliotis , Helen Maynard
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , Y02E10/547 , Y02P70/521
摘要： Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.
摘要翻译：公开了控制太阳能电池中掺杂剂扩散的方法。第二种与掺杂剂结合使用以改变扩散区。例如，磷和硼通过与间隙硅原子配对而扩散。因此，通过控制这些间隙的产生和位置，可以控制掺杂剂的扩散速率。在一个实施例中，使用较重的元素，例如锗，氩或硅，以产生间隙。由于这些较重的元素的存在，掺杂剂扩散到衬底中。在另一个实施方案中，植入碳。碳减少了间隙的数量，因此可用于限制掺杂剂的扩散。在另一个实施方案中，使用诸如氦的较轻元素使基底无定形。产生的晶体 - 非晶界面限制了掺杂剂到衬底中的扩散。

6. 发明授权

US08877654B2 Pulsed plasma to affect conformal processing 有权
标题翻译：脉冲等离子体影响保形加工
公开(公告)号：US08877654B2
公开(公告)日：2014-11-04
申请号：US12760847
申请日：2010-04-15
申请人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
发明人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , H01L21/2236 , H01L21/3065 , H01L29/66803
摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
摘要翻译：提供等离子体处理方法。等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

7. 发明申请

US20110256732A1 Pulsed Plasma to Affect Conformal Processing 有权
标题翻译：脉冲等离子体影响保形加工
公开(公告)号：US20110256732A1
公开(公告)日：2011-10-20
申请号：US12760847
申请日：2010-04-15
申请人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
发明人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
IPC分类号： H01L21/30 , C23C14/48
CPC分类号： H01L21/02274 , H01L21/2236 , H01L21/3065 , H01L29/66803
摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
摘要翻译：提供等离子体处理方法。等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

8. 发明申请

US20070066073A1 LIKE INTEGRATED CIRCUIT DEVICES WITH DIFFERENT DEPTH 有权
公开(公告)号：US20070066073A1
公开(公告)日：2007-03-22
申请号：US11162766
申请日：2005-09-22
申请人： Habib Hichri , Kimberly Larsen , Helen Maynard , Kevin Petrarca
发明人： Habib Hichri , Kimberly Larsen , Helen Maynard , Kevin Petrarca
IPC分类号： H01L29/00 , H01L21/311 , H01L21/302
CPC分类号： H01L21/02118 , H01F41/041 , H01L21/02282 , H01L21/3083 , H01L21/312 , H01L21/76816 , H01L23/522 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.

9. 发明申请

US20070273004A1 LIKE INTEGRATED CIRCUIT DEVICES WITH DIFFERENT DEPTH 审中-公开
标题翻译：类似于具有不同深度的集成电路设备
公开(公告)号：US20070273004A1
公开(公告)日：2007-11-29
申请号：US11836215
申请日：2007-08-09
申请人： Habib Hichri , Kimberly Larsen , Helen Maynard , Kevin Petrarca
发明人： Habib Hichri , Kimberly Larsen , Helen Maynard , Kevin Petrarca
IPC分类号： H01L29/00
CPC分类号： H01L21/02118 , H01F41/041 , H01L21/02282 , H01L21/3083 , H01L21/312 , H01L21/76816 , H01L23/522 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.
摘要翻译：本发明同时形成了类似结构和不同深度的集成电路器件，例如互连和电感器。本发明通过具有通孔和没有通孔的区域的衬底上的区域上沉积保形聚合物。同时，在具有和不具有通孔的区域中形成空腔。在具有通孔的区域中形成的空腔的深度将比在没有通孔的区域中形成的空腔更深地延伸到基底中。这是因为聚合物沿着衬底的表面不均匀地沉积，更具体地，在具有基底凹陷的区域中更薄。一旦填充有导电材料，形成在具有通孔的区域中更深地延伸到衬底中的空腔成为电感器，并且在没有通孔的区域中形成的不太深地延伸到衬底中的空穴变成互连。

10. 发明申请

US20070007244A1 DETECTION OF LOSS OF PLASMA CONFINEMENT 审中-公开
标题翻译：检测等离子体制约的损失
公开(公告)号：US20070007244A1
公开(公告)日：2007-01-11
申请号：US11160671
申请日：2005-07-05
申请人： Habib Hichri , Kaushik Kumar , Helen Maynard
发明人： Habib Hichri , Kaushik Kumar , Helen Maynard
IPC分类号： G01L21/30 , H01L21/306 , C23F1/00 , B44C1/22
CPC分类号： G01M3/226 , H01J37/32623 , H01J37/32935 , H01L21/67069
摘要： A system and method for detecting a loss of plasma confinement. The system includes a plasma chamber that includes a plasma space and a non-plasma space. A plasma apparatus generates a plasma within the plasma space. The non-plasma space surrounds the plasma space and is separated from the plasma space by a confinement barrier that is adapted to confine the plasma in the plasma space during performance of an operational process by the plasma on a substrate disposed within the plasma space. Plasma detectors distributed on bounding surfaces of the non-plasma space are adapted to detect plasma that has escaped from the plasma space during performance of the operational process. The operational process is performed while the plasma detectors are monitoring the non-plasma space for a presence of the escaped plasma in the non-plasma space. If the monitoring has detected the escaped plasma, then the operational process is aborted.
摘要翻译：一种用于检测血浆约束损失的系统和方法。该系统包括等离子体室，其包括等离子体空间和非等离子体空间。等离子体装置在等离子体空间内产生等离子体。非等离子体空间围绕等离子体空间，并且通过限制屏障与等离子体空间分离，该限制屏障适于在等离子体在等离子体空间内的衬底上的等离子体执行操作过程期间将等离子体限制在等离子体空间中。分布在非等离子体空间的边界表面上的等离子体检测器适于检测在执行操作过程期间已经从等离子体空间逸出的等离子体。在等离子体检测器正在监测非等离子体空间以在非等离子体空间中存在逸出的等离子体的同时执行操作过程。如果监测检测到逃逸的等离子体，则操作过程中止。

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