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    • 3. 发明授权
    • USJ techniques with helium-treated substrates
    • USJ技术与氦处理的基板
    • US08372735B2
    • 2013-02-12
    • US12339295
    • 2008-12-19
    • Christopher HatemLudovic GodetAlexander Kontos
    • Christopher HatemLudovic GodetAlexander Kontos
    • H01L21/26
    • H01L21/26506H01L21/2236H01L21/26513H01L21/2658H01L29/6659H01L29/7833
    • A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
    • 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如,已经表明,掺杂剂将仅渗透到非晶态界面的衬底,而不再进一步。 因此,通过适当地确定氦的注入能量,可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻,对结深度没有影响。 此外,氦的横向is is与植入能量和氦PAI的剂量率有关,因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此,可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。
    • 4. 发明申请
    • USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES
    • USJ技术与经过处理的基板
    • US20100041218A1
    • 2010-02-18
    • US12339295
    • 2008-12-19
    • Christopher HatemLudovic GodetAlexander Kontos
    • Christopher HatemLudovic GodetAlexander Kontos
    • H01L21/266
    • H01L21/26506H01L21/2236H01L21/26513H01L21/2658H01L29/6659H01L29/7833
    • A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
    • 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如,已经表明,掺杂剂将仅渗透到非晶态界面的衬底,而不再进一步。 因此,通过适当地确定氦的注入能量,可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻,对结深度没有影响。 此外,氦的横向is is与植入能量和氦PAI的剂量率有关,因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此,可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。