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    • 2. 发明授权
    • Contact arrangement for vacuum switches with axial magnetic fields
    • 具有轴向磁场的真空开关的接触装置
    • US4935588A
    • 1990-06-19
    • US273857
    • 1988-09-23
    • Ruediger HessHorst KippenbergWilfried KuhlWolfgang SchlenkErnst-Ludwig HoeneReiner Mueller
    • Ruediger HessHorst KippenbergWilfried KuhlWolfgang SchlenkErnst-Ludwig HoeneReiner Mueller
    • H01H33/66H01H1/02H01H33/664
    • H01H33/6642H01H1/0206
    • Contact pieces for vacuum switches with axial magnetic field are designed e.g. as cup contacts with slotting in the same direction which support a diskshaped contact body and have means for the suppression of eddy currents. According to the invention, the contact bodies (10, 20, 30, 40, 50) have, at least on their backside, radial areas (15, 25, 35, 45, 55) of markedly lower electrical conductivity than the base material. Such radial areas may be, grooves (15 to 18) on the backside (12) of the contact body (10), diffusion zones (25, 35) of additives reducing the electrical conductivity of the base material, or combinations of the two. If the contact bodies (40,50) are made by powder metallurgical methods, it is also possible to provide the radial areas during production as fillings (45) or as molded parts (55) of a material of lower electrical conductivity than that of the base material.
    • PCT No.PCT / DE87 / 00124 Sec。 371日期:1988年9月23日 102(e)1988年9月23日PCT PCT 1987年3月20日PCT公布。 出版物WO87 / 06052 1987年10月8日发布。用于具有轴向磁场的真空开关的接触件被设计为例如。 因为杯子以相同的方向与开槽相接触,其支撑盘形接触体并具有用于抑制涡流的装置。 根据本发明,接触体(10,20,30,40,50)至少在其背面具有比基底材料明显更低导电性的径向区域(15,25,35,45,55)。 这种径向区域可以是接触体(10)的背面(12)上的凹槽(15至18),减少基材的导电性的添加剂的扩散区(25,35)或两者的组合。 如果接触体(40,50)通过粉末冶金方法制造,则也可以在生产期间提供作为填充物(45)的径向区域或作为比导电体(45,50)的导电性低的材料的模制部件(55) 基材。
    • 4. 发明授权
    • Process of producing a compound material of chromium and copper
    • 生产铬和铜复合材料的方法
    • US4503010A
    • 1985-03-05
    • US513479
    • 1983-07-13
    • Horst KippenbergHeinrich HaesslerManfred Huehnlein
    • Horst KippenbergHeinrich HaesslerManfred Huehnlein
    • B22F3/26H01H1/02B22F3/00
    • B22F3/26H01H1/0206
    • In the method according to the invention, Cr powder is poured into a degased mold, which can be made of graphite. On this Cr powder a piece of low-oxygen copper is placed. Subsequently, the mold is closed with a porous cover, which can also be made of graphite. Then the mold is degased in a high-vacuum furnace at room temperature until a pressure of better than 10.sup.-4 mb is reached. Thereafter, the furnace temperature is increased to as high as possible a temperature below the melting point of copper. This furnace temperature is maintained constant until an internal pressure in the furnace of better than 10.sup.-4 mb is reached. Subsequently, without intermediate cooling, the furnace temperature is further increased slowly to a final value of 100 degrees K. to 200 degrees K. above the melting temperature of the copper. This temperature is then maintained until the porosity contained in the Cr powder is completely filled up by the liquid copper.
    • 在根据本发明的方法中,将Cr粉末倒入可由石墨制成的脱模模具中。 在该Cr粉末上放置一片低氧铜。 随后,模具用多孔盖封闭,多孔盖也可由石墨制成。 然后将模具在高真空炉中在室温下脱气,直到达到优于10-4mb的压力。 此后,将炉温提高到低于铜熔点的温度。 炉内的温度保持恒定,直到炉内的压力达到10-4mb以上为止。 随后,在没有中间冷却的情况下,将炉温度进一步缓慢升高到高于铜的熔融温度的100度K至200度K. 然后保持该温度,直到包含在Cr粉末中的孔隙被液体铜完全填满。
    • 9. 发明授权
    • Process for producing a CUCB contact material for vacuum contactors
    • 用于生产用于真空接触器的CUCB接触材料的方法
    • US5241745A
    • 1993-09-07
    • US777411
    • 1991-12-02
    • Horst Kippenberg
    • Horst Kippenberg
    • B22F3/14B22F3/11B22F3/15B22F5/00B22F5/12C22C1/04H01H1/02H01H11/04H01H33/66
    • C22C1/0425B22F3/15H01H1/0206H01H11/048Y10T29/49204Y10T29/49206
    • To produce CuCr contact materials, it is known to use purely powder-metallurgical, sinter impregnation and smelt-metallurgical processes. Only materials produced by smelt-metallurgical processes are suitable as contact materials for vacuum contactors based on copper-chromium. According to the invention, a contact material for vacuum contactors consisting essentially of copper (Cu) and chromium (Cr) in the proportion of 50 to 70% wt. Cu and 30 to 50% wt. Cr is manufactured by pressing and sintering a powdered mixture of the components until a closed porosity is attained and by subsequently cold working the sintered body. It has been possible to demonstrate that an intimate and faultless bonding of the components Cu and Cr is obtained by cold welding the structural constituents with this process as with smelting.
    • PCT No.PCT / DE89 / 00344 Sec。 371 1991年12月2日第 102(e)日期1991年12月2日PCT提交1989年5月31日PCT公布。 出版物WO90 / 15425 1990年12月13日。为了生产CuCr接触材料,已知使用纯粉末冶金,烧结浸渍和熔炼冶金工艺。 只有通过冶炼冶金工艺生产的材料才适合作为基于铜 - 铬的真空接触器的接触材料。 根据本发明,用于真空接触器的接触材料,其基本上由铜(Cu)和铬(Cr)组成,其比例为50至70重量%。 Cu和30〜50重量%。 Cr通过压制和烧结组分的粉末混合物直到达到闭孔和通过随后冷加工烧结体来制造。 已经有可能证明,通过用冶炼方法将结构组分冷熔焊接,可获得组分Cu和Cr的紧密且无缺陷的结合。