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1. 发明授权

US07972886B2 Method of manufacturing micro electro mechanical systems device 有权
标题翻译：微机电系统装置的制造方法
公开(公告)号：US07972886B2
公开(公告)日：2011-07-05
申请号：US12143372
申请日：2008-06-20
申请人： Heewon Jeong , Yasushi Goto , Yuko Hanaoka , Tsukasa Fujimori
发明人： Heewon Jeong , Yasushi Goto , Yuko Hanaoka , Tsukasa Fujimori
IPC分类号： H01L21/00
CPC分类号： B81C1/00952 , B81B2201/0235 , B81B2203/0307 , B81C1/00039 , B81C2201/019 , B81C2203/058 , G01C19/5733 , G01C19/5755 , G01P15/0802 , G01P15/125
摘要： Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.
摘要翻译：提供了一种MEMS装置，其对于未对准是坚固的，并且不需要在诸如角速度传感器，加速度传感器，组合传感器或微镜的MEMS装置的制造中的双面晶片处理。在制备其中具有空间的基板之后，在要形成固定到支撑基板上的诸如固定部分，端子部分和基座等固定部件的位置的器件层中形成孔，并且填充孔固定材料使得固定材料到达支撑基板，从而将装置层围绕孔固定到支撑基板。

2. 发明申请

US20090017579A1 METHOD OF MANUFACTURING MICRO ELECTRO MECHANICAL SYSTEMS DEVICE 有权
标题翻译：微电子机械系统设备的制造方法
公开(公告)号：US20090017579A1
公开(公告)日：2009-01-15
申请号：US12143372
申请日：2008-06-20
申请人： Heewon JEONG , Yasushi Goto , Yuko Hanaoka , Tsukasa Fujimori
发明人： Heewon JEONG , Yasushi Goto , Yuko Hanaoka , Tsukasa Fujimori
IPC分类号： H01L21/50
CPC分类号： B81C1/00952 , B81B2201/0235 , B81B2203/0307 , B81C1/00039 , B81C2201/019 , B81C2203/058 , G01C19/5733 , G01C19/5755 , G01P15/0802 , G01P15/125
摘要： Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.
摘要翻译：提供了一种MEMS装置，其对于未对准是坚固的，并且不需要在诸如角速度传感器，加速度传感器，组合传感器或微镜的MEMS装置的制造中的双面晶片处理。在制备其中具有空间的基板之后，在要形成固定到支撑基板上的诸如固定部分，端子部分和基座等固定部件的位置的器件层中形成孔，并且填充孔固定材料使得固定材料到达支撑基板，从而将装置层围绕孔固定到支撑基板。

3. 发明授权

US07919814B2 Semiconductor device with integrated circuit electrically connected to a MEMS sensor by a through-electrode 有权
标题翻译：具有集成电路的半导体器件通过通孔与MEMS传感器电连接
公开(公告)号：US07919814B2
公开(公告)日：2011-04-05
申请号：US12270463
申请日：2008-11-13
申请人： Yasushi Goto , Tsukasa Fujimori , Heewon Jeong , Kiyoko Yamanaka
发明人： Yasushi Goto , Tsukasa Fujimori , Heewon Jeong , Kiyoko Yamanaka
IPC分类号： H01L27/12
CPC分类号： B81C1/00246 , B81B2201/0235 , B81C2203/0728 , B81C2203/0735 , B81C2203/0778 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.
摘要翻译：以及实现半导体器件的小型化和厚度降低以及灵敏度提高，其具有：通过体积微加工技术（例如加速度传感器和角速度传感器）形成的MEMS传感器; 和LSI电路，可以简化具有MEMS传感器和LSI电路的半导体器件的封装结构。在SOI衬底的硅层上形成具有MISFET和布线的集成电路，并且通过处理SOI衬底的衬底层来形成包含内部结构的MEMS传感器。换句话说，通过使用SOI衬底的两个表面，集成电路和MEMS传感器安装在一个SOI衬底上。集成电路和MEMS传感器通过设置在SOI衬底中的通孔电连接。

4. 发明授权

US08327706B2 Angular velocity detecting device 有权
标题翻译：角速度检测装置
公开(公告)号：US08327706B2
公开(公告)日：2012-12-11
申请号：US12832965
申请日：2010-07-08
申请人： Heewon Jeong , Yasushi Goto
发明人： Heewon Jeong , Yasushi Goto
IPC分类号： G01P15/08
CPC分类号： G01P3/22 , G01C19/5747 , G01C19/5762
摘要： A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.
摘要翻译：提供了一种高性能角速率检测装置。包括驱动框架和科里奥利框架的驱动部分通过共享固定端并且沿与驱动方向正交的方向延伸的至少两个固定梁悬浮，从而使驱动部分振动。即使当通过安装或热波动使基板变形时，产生到固定梁和支撑梁的内应力也小，从而保持振动状态，例如共振频率和振动幅度恒定。因此，可以获得对安装环境变化坚固的高性能角速度检测装置。

5. 发明授权

US08427177B2 Capacitance sensor 有权
标题翻译：电容传感器
公开(公告)号：US08427177B2
公开(公告)日：2013-04-23
申请号：US12912580
申请日：2010-10-26
申请人： Heewon Jeong , Kiyoko Yamanaka , Yasushi Goto , Toshiaki Nakamura , Masahide Hayashi
发明人： Heewon Jeong , Kiyoko Yamanaka , Yasushi Goto , Toshiaki Nakamura , Masahide Hayashi
IPC分类号： G01R27/26 , G01R27/08
CPC分类号： G01P21/00 , G01C19/5719 , G01P15/125 , G01P2015/0814
摘要： A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.
摘要翻译：提供了一种在由加速度传感器表示的电容传感器中可以抑制错误检测和错误诊断的技术。构成电容检测单元的第一电容元件和第二电容元件以及配置强制振荡产生单元的第三电容元件和第四电容元件彼此电分离。也就是说，构成第三电容元件和第四电容元件的诊断可移动电极与可动部一体地形成。另一方面，诊断固定电极和诊断固定电极与检测固定电极和检测固定电极电分离。

6. 发明授权

US08429969B2 Inertial sensor and method of manufacturing the same 有权
标题翻译：惯性传感器及其制造方法
公开(公告)号：US08429969B2
公开(公告)日：2013-04-30
申请号：US12867472
申请日：2009-04-17
申请人： Kiyoko Yamanaka , Heewon Jeong , Takashi Hattori , Yasushi Goto
发明人： Kiyoko Yamanaka , Heewon Jeong , Takashi Hattori , Yasushi Goto
IPC分类号： G01P1/02 , G01P15/125 , G01P9/04 , G01C19/56
CPC分类号： G01P15/0802 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/00293 , G01C19/5733 , G01C19/5769 , G01P15/125 , G01P2015/0814 , Y10T156/10
摘要： An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.
摘要翻译：提供一种惯性传感器，其能够使诸如加速度传感器的惯性传感器的空间的压力高于密封步骤期间的空间，并提高可靠性。惯性传感器可以通过制造包括基板的惯性传感器，基板上的可移动部分，密封可动部分以覆盖可动部分的盖构件来实现，其中气体发生材料被施加到帽的可动部分侧。

7. 发明授权

US07770451B2 Angular velocity detecting device 有权
标题翻译：角速度检测装置
公开(公告)号：US07770451B2
公开(公告)日：2010-08-10
申请号：US12136759
申请日：2008-06-10
申请人： Heewon Jeong , Yasushi Goto
发明人： Heewon Jeong , Yasushi Goto
IPC分类号： G01P15/08
CPC分类号： G01P3/22 , G01C19/5747 , G01C19/5762
摘要： A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.
摘要翻译：提供了一种高性能角速率检测装置。包括驱动框架和科里奥利框架的驱动部分通过共享固定端并且沿与驱动方向正交的方向延伸的至少两个固定梁悬浮，从而使驱动部分振动。即使当通过安装或热波动使基板变形时，产生到固定梁和支撑梁的内应力也小，从而保持振动状态，例如共振频率和振动幅度恒定。因此，可以获得对安装环境变化坚固的高性能角速度检测装置。

8. 发明申请

US20110048129A1 Inertial Sensor and Method of Manufacturing the Same 有权
标题翻译：惯性传感器及其制造方法
公开(公告)号：US20110048129A1
公开(公告)日：2011-03-03
申请号：US12867472
申请日：2009-04-17
申请人： Kiyoko Yamanaka , Heewon Jeong , Takashi Hattori , Yasushi Goto
发明人： Kiyoko Yamanaka , Heewon Jeong , Takashi Hattori , Yasushi Goto
IPC分类号： G01C19/56 , B32B37/02
CPC分类号： G01P15/0802 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/00293 , G01C19/5733 , G01C19/5769 , G01P15/125 , G01P2015/0814 , Y10T156/10
摘要： An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.
摘要翻译：提供一种惯性传感器，其能够使诸如加速度传感器的惯性传感器的空间的压力高于密封步骤期间的空间，并提高可靠性。惯性传感器可以通过制造包括基板的惯性传感器，基板上的可移动部分，密封可动部分以覆盖可动部分的盖构件来实现，其中气体发生材料被施加到帽的可动部分侧。

9. 发明申请

US20100269589A1 ANGULAR VELOCITY DETECTING DEVICE 有权
标题翻译：角速度检测装置
公开(公告)号：US20100269589A1
公开(公告)日：2010-10-28
申请号：US12832965
申请日：2010-07-08
申请人： Heewon Jeong , Yasushi Goto
发明人： Heewon Jeong , Yasushi Goto
IPC分类号： G01C19/56
CPC分类号： G01P3/22 , G01C19/5747 , G01C19/5762
摘要： A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is leviated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.
摘要翻译：提供了一种高性能角速率检测装置。包括驱动框架和科里奥利框架的驱动部分由共享固定端并且沿与驱动方向正交的方向延伸的至少两个固定梁而缓冲，从而使驱动部分振动。即使当通过安装或热波动使基板变形时，产生到固定梁和支撑梁的内应力也小，从而保持振动状态，例如共振频率和振动幅度恒定。因此，可以获得对安装环境变化坚固的高性能角速度检测装置。

10. 发明授权

US07405588B2 Device and data processing method employing the device 失效
标题翻译：使用该设备的设备和数据处理方法
公开(公告)号：US07405588B2
公开(公告)日：2008-07-29
申请号：US10933272
申请日：2004-09-03
申请人： Takayuki Kawahara , Masayuki Miyazaki , Yasushi Goto , Natsuki Yokoyama , Takahiro Onai
发明人： Takayuki Kawahara , Masayuki Miyazaki , Yasushi Goto , Natsuki Yokoyama , Takahiro Onai
IPC分类号： H03K19/173
CPC分类号： G11C23/00 , H03K19/1776 , H03K19/1778
摘要： The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.
摘要翻译：本发明涉及可以改变功能的LSI，特别是实现通过使用MEMS开关改变电路的连接来改变功能的系统LSI。可以保持状态并且表现出最佳缝合性能的双稳态MEMS开关，即开关在导通状态下具有几欧姆或更小的非常小的电阻，并且在断开状态下具有无限电阻; 被雇用。通过使用CMOS半导体的布线层来形成功能可以在操作期间改变的元件来形成MEMS开关。实现了具有高自由度，高速度，小面积化的高自由度的半导体装置。

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