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    • 10. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US4726031A
    • 1988-02-16
    • US784594
    • 1985-10-04
    • Kiyohide WakaoHaruhisa Soda
    • Kiyohide WakaoHaruhisa Soda
    • H01S5/00H01S5/042H01S5/06H01S5/10H01S5/12H01S3/19
    • H01S5/10H01S5/12H01S5/1057H01S5/106H01S5/1064H01S5/1243
    • A semiconductor laser including a stripe-shaped active layer, a clad region, and a diffraction grating. The stripe-shaped active layer has a thickness in a first direction, has a first energy gap, and extends in a second direction orthogonal to the first direction. The clad region surrounds the stripe-shaped active layer, and has a second energy band gap greater than the first energy band gap. The diffraction grating is provided in parallel with and adjacent to, the stripe-shaped active layer. The stripe-shaped active layer has a first portion with a first light propagation constant and with a first dimension in a third direction orthogonal to the first and second directions, and has a second portion with a second light propagation constant and with a second dimension in the third direction. The first dimension and the second dimension are different from each other. The second portion has a length L in the second direction. The stripe-shaped active layer satisfies the condition that a product of .DELTA..beta. and L is an odd multiple of .pi./2, where .DELTA..beta. is a difference between the first and second light propagation constants.
    • 一种包括条形有源层,包层区和衍射光栅的半导体激光器。 条形有源层具有第一方向的厚度,具有第一能隙,并且沿与第一方向正交的第二方向延伸。 包层区域围绕条状有源层,并且具有大于第一能带隙的第二能带隙。 衍射光栅与条形有源层平行并相邻地设置。 条形有源层具有第一部分,具有第一光传播常数,第一尺寸在与第一和第二方向正交的第三方向上,并且具有第二部分,具有第二光传播常数,第二部分具有第二尺寸 第三个方向。 第一维度和第二维度彼此不同。 第二部分在第二方向上具有长度L. 条形有源层满足以下条件:DELTAβ和L的乘积是pi / 2的奇数倍,其中ΔTAβ是第一和第二光传播常数之间的差。